• Electronic Materials Letters
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• v.18
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• pp.391-399
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• 2022

Photoelectrochemical (PEC) water splitting is one of the critical energy conversion techniques to prepare for future energy demands. Among the various trials to construct effective water splitting semiconductor photoelectrodes, In₂O₃/In₂S₃ heterostructures can be promising candidates for their advantageous properties in solar water oxidation. Herein, we synthesized In₂O₃ nanorods on FTO substrate through a direct glancing angle deposition method. Subsequently, the In₂S₃ layer was conformally coated on In₂O₃ nanorods through facile chemical bath deposition. As synthesized photoanodes of In₂O₃/In₂S₃ form type II junction, leading to considerable cathodic onset potential shift with the increased photocurrent density compared to pristine samples. To further enhance PEC properties, the interficial engineering strategies of the Co ion doping and the deposition of ultra-thin Al₂O₃ film were carried out. Co ion could facilitate the charge transfer in photoanodes through the increased surface area, and the 2 nm Al₂O₃ layer coated above the photoanode effectively worked as the passivation layer to stabilize the photoanodes in alkaline electrolytes environments. This work would contribute to developing efficient photoanodes through various nanoscale engineering strategies.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.232-232
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• 2012

The doping of semiconducting elements is essential for the development of silicon quantum dot (QD) solar cells. Especially the doping elements should be activated by substitution at the crystalline sites in the crystalline silicon QDs. However, no analysis technique has been developed for the analysis of the activated dopants in silicon QDs in $SiO_2$ matrix. Secondary ion mass spectrometry (SIMS) is a powerful technique for the in-depth analysis of solid materials and the impurities analysis of boron and phosphorus in semiconductor materials. For the study of diffusion behaviour of B and P by SIMS, Si/$SiO_2$ multilayer films doped by B or P were fabricated and annealed at high temperatures for the activated doping of B and P. The distributions of doping elements were analyzed by SIMS. Boron found to be preferentially distributed in Si layer rather than the $SiO_2$ layer. Especially the B in the Si layers was separated to two components of an interfacial component and a central one. The central component was understood as the activated elements. On the other hand, phosphorus did not show any preferred diffusion.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.196.2-196.2
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• 2015

There are various issues fabricating the successful and efficient solar cell structures. One of the most important issues is band alignment technique. The solar cells make the carrier in their active region over the p-n junction. Then, electrons and holes diffuse by minority carrier diffusion length. After they reach the edge of solar cells, there exist large energy barrier unless the good electrode are chosen. Many various conductor with different work functions can be selected to solve this energy barrier problem to efficiently extract carriers. Tungsten oxide has large band gap known as approximately 3.4 eV, and usually this material shows n-type property with reported work function of 6.65 eV. They are extremely high work function and trap level by oxygen vacancy cause them to become the hole extraction layer for optical devices like solar cells. In this study, we deposited tungsten oxide thin films by sputtering technique with various sputtering conditions. Their electrical contact properties were characterized with transmission line model pattern. The structure of tungsten oxide thin films were measured by x-ray diffraction. With x-ray photoelectron spectroscopy, the content of oxygen was investigated, and their defect states were examined by spectroscopic ellipsometry, UV-Vis spectrophotometer, and photoluminescence measurements.

• 한국전기화학회:학술대회논문집
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• 2005.07a
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• pp.383-390
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• 2005

Effect of applying a DC voltage on the interfacial reaction at the metal to zirconia interface was investigated utilizing an oxygen ionic conductivity of partially stabilized zirconia. The joining of copper rod and zirconia tube was carried out in Ar gas atmosphere at $1000^{\circ}C$. There are two type of the joining. The one is the reaction bond consisting of copper and zirconia was dominated by surface reaction with a undetectable very thin layer. It was found that copper elements were diffused to zirconia side, but that Zr ions were not diffused to copper side. These results mean application of a DC voltage to migrate oxygen to the copper-zirconia interface can oxidize metal at the copper-zirconia interface and the bonding reaction between zirconia and copper oxide may occur. The other is the reaction bonding was dominated by interdiffusion with a very thick interface layer. This result mean application of a DC voltage can reduce zirconia at the interface. The bonding reaction is to be an alloying between Zr and Cu.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.34-42
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• 1997

Hg-Te-CdTe superlattices have received much interests over the last several years as a potential material for its applications for detecting devices and optoelectronics. We have grown the HgTe-CdTe superlattice using MBE. in our lab. We have carried out DCRC spectroscopy after growth of HgTe-CdTe superlattice with varying the superlattice periods and controlling the barrier thickness and we have that the presence of the main peak and the satellite peaks. We obtained 20 arcsec of FWHM over 100 periods of superlattice. We also note that high peak intensity shows the high quality of the sample and each layer of superlattice has abrupt interfaces. The angular separation between the main peak(m=0) and the first satellite peak(m=$\pm$1) is increased when the barrier layer thickness in superlatice layers are decreased. The separation between the first setellite peak(m=$\pm$1) and the second satellite peak(m$\pm$2) is increased similarly. The number of the satellite peak is a qualitative measure of the interfacial abruptness of the superlattice.

• Structural Engineering and Mechanics
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• v.72 no.5
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• pp.557-568
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• 2019

Accurate modeling of contact interface in bolted joints is crucial in predicting the dynamic behavior for bolted assemblies under external load. This paper presents a contact pressure distribution based non-uniform virtual material method to describe the joint interface of assembly structure, which is connected by sparsely distributed multi-bolts. Firstly, the contact pressure distribution of bolted joints is obtained by the nonlinear static analysis in the finite element software ANSYS. The contact surface around bolt hole is divided into several sub-layers, and contact pressure in each sub-layer is thought to be evenly. Then, considering multi-asperity contact at the micro perspective, the relationship between contact pressure and interfacial virtual material parameters for each sub-layer is established by using the fractal contact theory. Finally, an experimental platform for the dynamic characteristics testing of a beam lap structure with double-bolted joint is constructed to validate the efficiency of proposed method. It is found that the theoretical results are in good agreement with experimental results by impact response in both time- and frequency-domain, and the relative errors of the first four natural frequencies are less than 1%. Furthermore, the presented model is used to examine the effect of rough contact surface on dynamic characteristics of bolted joint.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.487-492
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• 2002

The growth kinetics of intermetallic compound layers formed between eutectic Sn-58Bi solder and (Cu, electroless Ni-P/Cu) substrate were investigated at temperature between 70 and 120 C for 1 to 60 days. The layer growth of intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P system satisfied the parabolic law at given temperature range. As a whole, because the values of time exponent (n) have approximately 0.5, the layer growth of the intermetallic compound was mainly controlled by volume diffusion over the temperature range studied. The apparent activation energies of Cu$_{6}$Sn$_{5}$ and Ni$_3$Sn$_4$ intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P were 127.9 and 81.6 kJ/mol, respectively.ely.

• Journal of Magnetics
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• v.17 no.4
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• pp.245-250
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• 2012

Ferromagnetic resonance and X-ray specular reflectivity measurements were performed on $Ni_{81}Fe_{19}/Ir_{20}Mn_{80}/Co_{90}Fe_{10}$ exchange bias trilayers, which were grown using the pulsed-DC magnetron sputtering technique on Si(100)/$SiO_2$(1000 nm) substrates, to investigate the evolution of the interface roughness and exchange bias and their dependence on the NiFe layer thickness. The interface roughness values of the samples decrease with increasing NiFe thickness. The in-plane ferromagnetic resonance measurements indicate that the exchange bias field and the peak-to-peak line widths of the resonance curves are inversely proportional to the NiFe thickness. Furthermore, both the exchange bias field and the interface roughness show almost the same dependence on the NiFe layer thickness. The out-of plane angular dependent measurements indicate that the exchange bias arises predominantly from a variation of exchange anisotropy due to changes in interfacial structure. The correlation between the exchange bias and the interface roughness is discussed.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.9 no.1
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• pp.43-54
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• 1997

This paper presents an approximate analytical solution to a two-region one-dimensional model for the charging process of stratified thermal storage tanks with variable inlet temperature in the presence of momentum-induced mixing. Based on the superposition principle, an arbitrary-varying inlet temperature is decomposed into inherent discontinuous steps and continuous intervals approximated as a finite number of piecewise linear functions. This approximation allows the temperature of the upper perfectly-mixed layer to be expressed in terms of constant, linear and exponential functions with respect to time. Applying the Laplace transform technique to the model equation for the lower thermocline layer subject to each of three representative interfacial conditions yields compact-form solutions, a linear combination of which constitutes the final temperature profile. A systematic method for deriving solutions to the plug-flow problem having polynomial-type boundary conditions is also established. The effect of adiabatic exit boundary on solution behaviors proves to be negligible under the actual working conditions, which justifies the assumption of semi-infinite domain introduced in the solution procedure. Finally, the approximate solution is validated by comparing it with an exact solution obtained for a specific variation of inlet temperature. Excellent agreements between them suffice to show the necessity and utility of this work.

• Journal of Magnetics
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• v.16 no.2
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• pp.161-163
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• 2011

We report results of first principles calculations for effects of an external electric field (E-field) on the magnetocrystalline anisotropy (MCA) in transition-metal (Fe, Co, and Ni) monolayers and at metal-insulator (Fe/MgO) interfaces by means of full-potential linearized augmented plane wave method. For the monolayers, the MCA in the Fe monolayer (but not in the Co and Ni) is modified by the E-field, and a giant modification is achieved in the $Fe_{0.75}Co_{0.25}$. For the Fe/MgO interfaces, the ideal Fe/MgO interface gives rise to a large out-of plane MCA, and a MCA modification is induced when an E-field is introduced. However, the existence of an interfacial FeO layer between the Fe layer and the MgO substrate may play a key role in demonstrating an Efield-driven MCA switching, i.e., from out-of-plane MCA to in-plane MCA.