• Proceedings of the KWS Conference
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• 2005.11a
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• pp.219-221
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• 2005

Sn-9Zn solder balls were bonded to Cu, ENIG (Electroless Nickel/Immersion Gold) and electrolytic Au/Ni pads, and the effect of aging on their joint reliability was investigated. The interfacial products were different from the general reaction layer formed in a Sn-base solder. The intermetallic compounds formed in the solder/Cu joint were $Cu_{5}Zn_{8}$ and $Cu_{6}Sn_{5}$. After aging treatment, voids formed irregularly at the bottom side of the solder because of Sn diffusion into the $Cu_{5}Zn_{8}$ IMC. In the case of the solder/ENIG joint, $AuZn_{3}$ IMCs were formed at the interface. In the case of the Au/Ni/Cu substrate, an $AuZn_{3}$ IMC layer formed at the interface due to the fast reaction between Au and Zn. In addition, the $AuZn_{3}$ IMC layer became detached from the interface after reflow. When the aging time was extended to 100 h, $Ni_{5}Zn_{21}$ IMC was observed on the Ni substrate.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.9
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• pp.676-680
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• 1999

To do breath alcohol measurement, a sensor is necessary that it can detect low alcohol gas concentration of 0.01% at least. In this work, a capacitance-type alcohol gas sensor using porous silicon layer is developed to measure low alcohol gas concentration. The sensor using porous silicon layer has some sensitivity at room temperature by very large effective surface area, but there is still much room for improvement. In this experiment, we measured the capacitance of the sensor under 254 nm UV light on the porous silicon layer, in which alcohol solution was kept in a flask at 25, 35, and $45^{\circ}C$ by a heater. As the result, the improvement of sensitivity by illuminating UV light was observed. The increasing rate of the capacitance was shown to be double more than those measured under UV-off state. It is supposed that UV light activates response of the oriental and interfacial polarizations which have slow relaxation time for AC field.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.118-123
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• 2007

The purpose of this work was to investigate the design and fabrication process effects on electrical properties in high capacitance multilayer ceramic capacitor (MLCC) with nickel electrode. Dielectric breakdown voltage and insulation resistance value were decreased with increasing stack layer number, but dielectric constant and capacitance were increased. With increasing green sheet thickness, dielectric breakdown voltage, C-V and I-V properties were also increased. The major reasons of the effects were thought to be the defects generated extrinsically during fabrication process and interfacial reactions formed between nickel electrode and dielectric layer. These investigations clearly showed the influence of both green sheet thick ness and stack layer number on the electrical properties in fabricating the MLCC.

• Journal of Magnetics
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• v.1 no.1
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• pp.4-8
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• 1996

Employing the LMTO band method, we have studied electronic and magnetic properties of Fe/Si/Fe trilayer in which the z-direction is chosen to be (111) direction of FeSi with B2 phase, We have also determined electronic structure of bulk FeSi, as a reference material. The ground state of FeSi is paramagnetic insulator with a band gap of 0.05 eV. Band structures of Fe/Si/Fe with varying the thickness of the spacer layer reveal that the spacer layer is metallic, and the states along the growth direction do not disperse much reflecting a two-dimensional nature. Magnetic moment of Fe atom in the interfacial layer of Fe/Si/Fe is reduced a lot as compared to the bulk value, suggesting a strong hybridization between Fe and Si states. The geometry of the Fermi surface indicates that the magnetic coupling period of ~8ML (monolayers) in Fe/Si/Fe is explained with a short Fermi wave vector of bcc Si.

• Applied Science and Convergence Technology
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• v.23 no.1
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• pp.40-43
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• 2014

We investigated the growth characteristics and interfacial properties of $HfO_2$ films deposited on Ge substrate through atomic layer deposited (ALD) by using an in-situ medium energy ion scattering analysis. The growth kinetics of $HfO_2$ grown on a $GeO_2/Ge$ substrate through ALD is similar to that grown on an $SiO_2/Si$ substrate. However, the incubation period of $HfO_2$ deposition on Ge is shorter than that on Si. The $HfO_2$ grown on the GeO/Ge substrate shows a significant diffusion of Hf atoms into the substrate interface and GeO volatilization after annealing at $700^{\circ}C$. The presence of low-quality Ge oxide or suboxide may degrade the electrical performance of device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.497-500
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.311-314
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• 1999

Ferroelectric PZT heterolayered thin films were fabricated by spin coating method on the Pt/Ti/SiO$_2$/Si substrate using PZT(10/90) and PZT(90/10) metal alkoxide solutions. All PZT heterolayered films showed a homogeneous grain structure without presence of the rosette structure. It can be assumed that the lower PZT layers a role of nucleation site or seeding layer for the formation of the upper PZT layer. Zr and Ti diffusion into the Pt electrode were mainly distributed at the surface of Pt electrode beneath the PZT/Pt interface. The PZT/Pt interfacial layer showed a microstructure characterized by a grain phase surrounded by a Pb-deficient pyrochlore matrix phase. The relative dielectric constant and the dielectric loss of the PZT-6 film were 567 and 3.6, respectively.

• Structural Engineering and Mechanics
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• v.69 no.2
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• pp.121-129
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• 2019

The present study investigates the propagation of shear waves in a composite structure comprised of imperfectly bonded piezoelectric layer with a micropolar half space. Piezoelectric layer is considered to be initially stressed. Micropolar theory of elasticity has been employed which is most suitable to explain the size effects on small length scale. The general dispersion equations for the existence of waves in the coupled structure are obtained analytically in the closed form. Some particular cases have been discussed and in one particular case the dispersion relation is in well agreement to the classical-Love wave equation. The effects of various parameters viz. initial stress, interfacial imperfection and micropolarity on the phase velocity are obtained for electrically open and mechanically free system. Numerical computations are carried out and results are depicted graphically to illustrate the utility of the problem. The phase velocity of the shear waves is found to be influenced by initial stress, interface imperfection and the presence of micropolarity in the elastic half space. The theoretical results obtained are useful for the design of high performance surface acoustic devices.

• Steel and Composite Structures
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• v.38 no.3
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• pp.281-291
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• 2021

An equivalent single-layer theory (EST) is put forward for analyzing free vibrations of steel-concrete composite beams (SCCB) based on a higher-order beam theory. In the EST, the effect of partial interaction between sub-beams and the transverse shear deformation are taken into account. After using the interlaminar shear force continuity condition and the shear stress free conditions at the top and bottom surface, the displacement function of the EST does not contain the first derivatives of transverse displacement. Therefore, the C0 interpolation functions are just demanded during its finite element implementation. Finally, the EST is validated by comparing the results of two simply-supported steel-concrete composite beams which are tested in laboratory and calculated by ANSYS software. Then, the influencing factors for free vibrations of SCCB are analyzed, such as, different boundary conditions, depth to span ratio, high-order shear terms, and interfacial shear connector stiffness.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.4
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• pp.857-864
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• 2009

This study aimed at developing the two stage and dual filtration system. It has a sand + activated carbon layer above the underdrain system and a sand layer above the middledrain system for pretreatment. When retrofitting an old filter bed or designing a new one, this technology can substitute the existing sand filter bed without requiring a new site. In order to extend the filtering duration, the upper layer of the filter bed consists of the rapid sand filtration with large particles which pre-treats and removes coarse particles and turbidity matters. The middle layer has biological activated carbon(BAC) and granular activated carbon(GAC) to eliminate dissolved organic matters, disinfection by-products precursors etc. The lower layer consists of the sand filtration for the post filtering mode. In this study, a pilot plant of two stage and dual filtration system was operated for 4 months in the S water treatment plant in Kyounggi-Do. The stability of turbidity was maintained below 1NTU. The TOC, THMFP and HAAFP were removed about 90% by two stage and dual filtration system, which is almost 2 times higher than S WTP. From analysis result of HPC along the depth of activated carbon + sand layer at 2nd stage, microorganism was mostly not detected, however, increment of HPC was shown as it becomes deeper. It indicates that growth of microorganism is occurred at activated carbon layer.