• 대한토목학회논문집
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• 제30권3A호
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• pp.221-228
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• 2010

탄소섬유시트 보강공법은 열화 손상된 콘크리트 구조물의 보강에 가장 많이 사용되는 보강공법 중 하나이다. 탄소섬유시트 보강공법은 에폭시접착제를 사용하여 탄소섬유시트를 콘크리트의 외부에 부착하는 보강공법으로 탄소섬유시트에 의한 휨보강이 에폭시 접착 경계면을 통하여 콘크리트로 전달된다. 따라서 사용기간이 경과함에 따라 에폭시 접착 경계면에 발생하는 크리프 등의 시간의존적 거동은 보강효과를 감소시키는 요인이 된다. 본 연구에서는 경계면에서 발생하는 크리프 영향을 해석하기 위하여 콘크리트의 크리프 거동에 대한 기존의 연구들을 고찰하고, 이를 바탕으로 에폭시 접착 경계면의 크리프 영향을 예측할 수 있는 이론적인 연구를 수행하였다. 제안된 유한요소해석기법은 기존의 콘크리트 크리프 거동 분석을 위해 사용되던 유변모델을 에폭시 접착 경계면에 적용한 것으로 기존 실험결과와 비교를 통하여 타당성을 검증하였다. 또한, 제안된 유한요소해석을 통하여 탄소섬유시트로 보강된 콘크리트 구조물의 시간의존적 거동에 경계면 재료의 크리프 영향을 반드시 고려해야 한다는 것을 입증하였다.

• Environmental Engineering Research
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• 제24권3호
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• pp.376-381
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• 2019

In this study, a poly(vinyl) alcohol/sodium alginate (PVA/SA) mixture was used to fabricate core-shell structured gel beads for autotrophic single-stage nitrogen removal (ASNR) using aerobic and anaerobic ammonia-oxidizing bacteria (AAOB and AnAOB, respectively). For stable ASNR process, the mechanical strength and oxygen penetration depth of the shell layer entrapping the AAOB are critical properties. The shell layer was constructed by an interfacial gelling reaction yielding thickness in the range of 2.01-3.63 mm, and a high PVA concentration of 12.5% resulted in the best mechanical strength of the shell layer. It was found that oxygen penetrated the shell layer at different depths depending on the PVA concentration, oxygen concentration in the bulk phase, and free ammonia concentration. The oxygen penetration depth was around $1,000{\mu}m$ when 8.0 mg/L dissolved oxygen was supplied from the bulk phase. This study reveals that the shell layer effectively protects the AnAOB from oxygen inhibition under the aerobic conditions because of the respiratory activity of the AAOB.

• Nuclear Engineering and Technology
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• 제52권6호
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• pp.1243-1251
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• 2020

Irradiation-induced damage of binderless nanoporous-isotropic graphite (NPIG) prepared by isostatic pressing of mesophase carbon microspheres for molten salt reactor was investigated by 3.0 MeV He⁺ irradiation at room temperature and high temperature of 600 ℃, and IG-110 was used as the comparation. SEM, TEM, X-ray diffraction and Raman spectrum are used to characterize the irradiation effect and the influence of temperature on graphite radiation damage. After irradiation at room temperature, the surface morphology is rougher, the increase of defect clusters makes atom flour bend, the layer spacing increases, and the catalytic graphitization phenomenon of NPIG is observed. However, the density of defects in high temperature environment decreases and other changes are not obvious. Mechanical properties also change due to changes in defects. In addition, SEM and Raman spectra of the cross section show that cracks appear in the depth range of the maximum irradiation dose, and the defect density increases with the increase of irradiation dose.

• ETRI Journal
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• 제31권6호
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• pp.660-666
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• 2009

We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top-gate In-Ga-Zn-oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below $200^{\circ}C$, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as $Si_3N_4$ and $Al_2O_3$, the electrical properties are analyzed. After post-annealing at $200^{\circ}C$ for 1 hour in an $O_2$ ambient, the sub-threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative-bias stress tests on TFTs with a $Si_3N_4$ IDL, the degradation sources are closely related to unstable bond states, such as Si-based broken bonds and hydrogen-based bonds. From constant-current stress tests of $I_d$ = 3 ${\mu}A$, an IGZO-TFT with heat-treated $Si_3N_4$ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge-injection and electron-trapping behavior.

• Bulletin of the Korean Chemical Society
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• 제34권2호
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• pp.384-388
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• 2013

Fluorine-doping on the $Li_{1+x}Mn_{1.9-x}Al_{0.1}O_4$ spinel cathode materials is found to alter crystal shape, and enhance initial interfacial reactivity and solid electrolyte interphase (SEI) formation, leading to improved initial coulombic efficiency in the voltage region of 3.3-4.3 V vs. Li/$Li^+$ in the room temperature electrolyte of 1 M $LiPF_6$/EC:EMC. SEM imaging reveals that the facetting on higher surface energy plane of (101) is additionally developed at the edges of an octahedron that is predominantly grown with the most thermodynamically stable (111) plane, which enhances interfacial reactivity. Fluorine-doping also increases the amount of interfacially reactive $Mn^{3+}$ on both bulk and surface for charge neutrality. Enhanced interfacial reactivity by fluorine-doping attributes instant formation of a stable SEI layer and improved initial cyclic efficiency. The data contribute to a basic understanding of the impacts of composition on material properties and cycling behavior of spinel-based cathode materials for lithium-ion batteries.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2001년도 추계 기술심포지움
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• pp.171-177
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• 2001

The adhesion enhancement from inserting a RF bias-sputtered Cr layer between Cu and polyimide (PI) has been studied. The RF bias power applied in this study was ranged from 0 to 400 W. Without the RF bias, the peel strength, which measures the adhesion strength, was nearly o g/mm. As the RF power was increased, the peel strength rose up to ~130 g/mm at 200 W, which remained constant with further increase of the RF bias power. Cross-sectional transmission electron microscopy(TEM) was used to investigate the interfacial reaction between the Cr film and PI substrate during the bias sputtering. The Cr/PI interface without the application of RF dais showed a clean, sharp interface while the RF raised Cr/PI interface had about 10~30 nm thick atomistically mixed interlayer between the metal film and PI substrate. This interlayer appeared to have resulted from the implantation of high energy adatoms during the RF bias sputtering of Cr film. This mixed layer serves as an interlocking layer, which enhances adhesion between the metal and PI layers.

• 한국해안해양공학회지
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• 제3권2호
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• pp.72-80
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• 1991

조석이 작용하는 흐름장에 있어서 염수쐐기의 거동특성을 파악하여, 실제의 하구에서 생성되는 비정상적염수쐐기의 형상과 그 길이를 정확하게 예측할 수 있는 수치모델의 구축을 목적으로, 수리실험 및 수치계산을 행하였다. 실험에서는 특히 조시에 따른 염수쐐기의 하층에서의 유속분포의 변화와 선단부의 거동에 주목하였다. 또한 점변일차원이층부정류모델에 의한 염수쐐기 형상의 수치계산을 행하여 실험결과와의 비교에 의해 그 모델의 적용성에 대하여 검토하였다.

• Corrosion Science and Technology
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• 제10권1호
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• pp.30-36
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• 2011

The effect of dynamic flow or forced convection were investigated and compared on the formation of inhibition layer, galvanizing and galvannealing reactions through the hot-dip galvanizing simulator with the oscillation of specimen in zinc bath, continuous galvanizing pilot plant with zinc pumping system through the snout and continuous galvanizing operation with Dynamic $Galvanizing^{TR}$ system. The interfacial Al pick-up was not consistent between the results of simulator, pilot plant and line operation, but the morphology of inhibition layer became compact and refined by the forced convection. The growth of Fe-Zn intermetallics at the interface was inhibited by the forced convection, whereas the galvannealing rate would be a little promoted.

• 한국진공학회지
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• 제12권S1호
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• pp.40-45
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• 2003

Ru interfacial layer was inserted into Mo-on-Si interface to enhance the extreme ultra-violet (EUV) reflective multilayer properties. The stacking status and optical properties are analyzed using cross-sectional transmission electron microscope (TEM), and reflectometer. About 1.5% of maximum reflectivity can be acquired as predicted in optical simulation, which is thought to be originated from the diffusion inhibition property. Phase defect correctability of the multilayer can be enhanced by the insertion of Ru barrier layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.190.2-190.2
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• 2014

We report the origin of the improvement of the power conversion efficiency (PCE) of hybrid thin-film solar cells when a soluble C60 derivative, [6,6]-phenyl-$C_{61}$-butyric acid methyl ester (PCBM), is introduced as a hole-blocking layer. The PCBM layer could establish better interfacial contact by decreasing the reverse ark-saturation current density, resulting in a decrease in the probability of carrier recombination. The power conversion efficiency of this optimized device reached a maximum value of 8.34% and is the highest yet reported for hybrid thin-film solar cells.