• 제목/요약/키워드: Interface-engineered junction

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Novel Interface-engineered Junction Technology for Digital Circuit Applications

  • Yoshida, J.;Katsuno, H.;Inoue, S.;Nagano, T.
    • Progress in Superconductivity
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    • 제3권1호
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    • pp.1-4
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    • 2001
  • Interface-engineered junctions with $YbBa_2$$Cu_3$$O_{7}$ as the counter electrode were demonstrated. The junctions exhibited excellent Josephson characteristics with a Josephson critical current ($I_{c}$) ranging from 0.1 mA to 8 mA and a magnetic field modulation of the $I_{c}$ exceeding 80% at 4.2 K while maintaining complete c-axis orientation of the counter-electrode layer. The$ 1\sigma$ spreads in $I_{c}$ for junctions with an average $I_{c}$ of 1-2 mA were 5-8% for 16 junctions within a chip, and 9.3% for a 100-junction array. Our dI/dV measurements suggest that a theoretical approach taking into account both a highly transparent barrier and the proximity effect is required to fully understand the Junction characteristics.ristics.

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고온 초전도 경사형 모서리 접합을 이용한 4단 쉬프트 레지스터의 동작 (Operation of a Single Flux Quantum 4-stage Shift Register Fabricated with High $T_c$ Ramp-edge Junction Technology)

  • 김준호;박종혁;김상협;정구락;강준희;성건용;한택상
    • Progress in Superconductivity
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    • 제3권1호
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    • pp.83-86
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    • 2001
  • We have fabricated a single flux quantum 4-stage shift register with interface-controlled $Y_1$$Ba_2$$Cu_3$$O_{7-x}$(YBCO) Josephson junction. The YBCO Josephson junctions showed RSJ-like current-voltage(I-V) curves at temperatures 45~80K. We tested load and shift operation of shift register with binary data sequences “1000”, “1010”, “1011”, and “1111” at 58K. For all the binary data sequences, the shift register operated successfully. By operating the circuit with proper current pulses, we observed no errors during at least 12 hours operation for all the data sequences.s.

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원통형 결함을 포함한 Ramp-Edge Junction의 수송특성 (Transport Properties of Ramp-Edge Junction with Columnar Defects)

  • Lee, C. W.;Kim, D. H.;Lee, T. W.;Sung, Gun-Yong;Kim, Sang-Hyeob
    • Progress in Superconductivity
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    • 제3권1호
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    • pp.65-69
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    • 2001
  • We measured the transport properties of$ YBa_2$$Cu_3$$O_{x}$ ramp-edge junction fabricated with interface-engineered barrier. The current-voltage characteristics show a typical resistively-shunted junction like behavior Voltage noise measurement revealed that the main source of the 1/f noise is the critical current and resistance fluctuations. The analysis of the noise data showed that the critical current fluctuations increase with temperature, whereas the resistance fluctuations are almost constant, and both fluctuations are almost correlated. The smaller magnitude of the critical current and resistance fluctuations seems to result from the columnar-deflects.s.

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