• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2003년도 추계학술발표대회 개요집
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• pp.80-82
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• 2003

• 한국진공학회:학술대회논문집
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• 한국진공학회 2003년도 제25회 학술발표회 초록집
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• pp.125-125
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• 2003

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2001년도 추계학술발표대회 개요집
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• pp.214-216
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• 2001

• 한국감성과학회:학술대회논문집
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• 한국감성과학회 2003년도 춘계학술대회 논문집
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• pp.36-40
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• 2003

근래에 들어 질병으로 인하여 의사표현이 곤란한 환자에게 뇌파에 기초한 BCI(Brain Computer Interface)와 같은 새로운 인터페이스를 제공하고자 하는 연구가 활발히 진행되고 있다. BCI를 위한 기초 연구로서 특정 자극에 대해 유발되는 뇌파의 측정과 분석은 BCI를 위한 뇌파의 패턴과 인터페이스의 설계에 중요한 역할을 한다. 이 연구의 목적은 시청각 자극 인가후 피험자의 반응 시간을 측정하는 시스템을 EEG와 같은 생체 신호 계측 시스템과 연동이 가능한 형태로 개발하는 것이다. 제안된 시스템은 기능적으로 자극 신호 발생부, 반응시간 측정부, 유발뇌파 측정부, 동기신호발생부로 나뉘어진다. 자극신호 발생부는 실험에 이용되는 자극신호를 제작하는 부분으로서 Flash를 사용하여 구현하였다. 반응시간 측정부는 문제에 대한 답 선택 요청시각으로부터 피험자의 반응까지의 시간을 측정하는 부분으로서 마이크로 컴퓨터(80C31)를 이용하여 구현하였다. 우발뇌파 측정부는 시판용 하드웨어와 소프트웨어를 그대로 사용하였다. 동기신호 발생부는 전체 시스템의 동기를 맞추기 위한 신호를 발생하는 부분으로서 문제제시, 답요구와 동기한 화면상의 명암 신호와 이를 검출하는 광센서로 구성하였다. 본 논문에서 제시한 방법에서는 기존의 유발진위 측정 및 자극시스템에 특정 모듈(반응시간 측정 장치, 동기신호 발생장치)만을 추가하여 실험자의 의도에 맞는 시스템을 설계할 수 있어 유발 뇌파 및 반응시간 측정을 필요로 하는 연구를 가속화 할 것이 기대된다.

• 한국분말재료학회지
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• 제12권4호
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• pp.291-295
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• 2005

CdSe hollow sphere with average size of about 30-50 nm was synthesized from the mixed solution of cadmium chloride $(CdCl_2)$, sodium selenosulfate $(Na_2SeSO_3)$ and ethylenediamine(EDA, $H_2NCH_2CH_2NH_2$) at room temperature. The molar ratio of EDA to $Cd^{2+}$ showed the most significant effect on the morphology of CdSe hollow sphere. This paper will present and discuss the possible formation mechanism of CdSe hollow sphere based on the observation of morphological changes.

• 접착 및 계면
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• 제7권4호
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• pp.39-44
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• 2006

A new kind of silicone-epoxy composite is reported in this research. The silicone-epoxy resin was synthesized by the hydrosilylation of tetramethycyclotetrasiloxane and 4-vinyl-1-cyclohexene 1,2-epoxy with a high reaction yield. It was found that the obtained silicone-epoxy resin shows a high reactive activity to the aluminum complex-silanol catalyst. The resin could be cured under the catalysis of $(Al(acac)_3/Ph_2Si(OH)_2$ at a concentration below 0.1 wt% to give a hard cured resin showing excellent optical clarity, UV resistance and thermal stability. It was also found that the Si-H groups facilitated the curing reaction and the silicone-epoxy resin bearing Si-H group could be cured effectively even if $Ph_2Si(OH)_2h$ was absent. Moreover, the UV resistance and thermal stability were improved significantly by the introduction of Si-H groups. This is possibly due to the reductive property of Si-H groups which can annihilate radical and peroxide effectively. This kind of silicone-containing epoxy composite might have very promising applications as optical resin, optical adhesive and encapsulation materials for electronic devices.

• 한국주조공학회지
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• 제17권1호
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• pp.28-35
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• 1997

SiC whisker and $Al_2O_3-SiO_2$ short fiber reinforced AC8A, AC8B and AC8B(J) marix composites were fabricated by squeeze casting method. Preform deformation, change of reinforcement volumefraction and formation of macro-segregation in two composites were investigated by using micro Vickers hardness test, analysis of macro and micro structures with OM, SEM and EDAX. $Al_2O_3-SiO_2$ short fiber preform manufactured with 5% $SiO_2$ binder in this study was considerably deformed and cracked, nevertheless, the short fibers were distributed homogeneously in the composites. In SiC whisker reinforced composites, on the other hand, preform deforming and cracking were not occurred, however, macro segregation zone formed along the infiltration routes by interface reaction during infiltration of molten metal into the preform was observed at center-low area in the composites. The decrease of hardness in the macro segregation zone resulted from the depletion of Si and Mg atoms.

• Applied Science and Convergence Technology
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• 제26권5호
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

• 한국광물학회지
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• 제11권2호
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• pp.106-116
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• 1998

The adsorption of Cs-137 and Sr-90 onto kaolinite in prescence of major groundwater cations (Ca2+, K+, Na+) with different concentrations was simulated by using triple-layer surface complexation model (TL-SCM). The site density (8.73 sites/nm2) of kaolinite used for TL-SCM was calculated from it's CEC and specific surface area. TL-SCM modeling results indicate that concentrations dependence on 137Cs and 90Sr adsorption onto kaolinite as a function of pH is best modeled as an outer-sphere surface reaction. This suggests that Cs+ and Sr2+ are adsorbed at the $\beta$-layer in kaolinite-water interface where the electrolytes, Nacl, KCl and CaCl2, bind. However, TL-SCM results on Sr adsorption show a discrepancy between batch data and fitting data in alkaline condition. This may be due to precipitation of SrCO3 and complexation such as SrOH+. Intrinsic reaction constants of ions obtained from model fit are as follows: Kintcs=10-2.10, KintSr=10-2.30, KintK=10-2.80, KintCa=10-3.10 and KintNa=10-3.32. The results are in the agreement with competition order among groundwater ions (K+>Ca2+>Na+) and sorption reference of nuclides (Cs-137>Sr-90) at kaolinite-water interface showed in batch test.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1223-1225
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• 1994

The properties of $TiN/TiSi_2$ bilayer formed by a rapid thermal anneal ing is investigated when thin $SiO_2$ film exists at the Ti-Si interface. The competitive reaction for the $TiN/TiSi_2$ bilayer occurs above $600^{\circ}C$. The thickness of the $TiSi_2$ layer decreases with increasing $SiO_2$ film thickness while the TiN layer increases at the competitive reaction. The composition of TiN layer is changed to the $TiN_xO_y$ film due to the thin $SiO_2$ layer at the Ti-Si interface while the structure of the TiN and $TiSi_2$ layers was not changed.