• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.272-272
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• 2013

The attractive features of photosynthetic reaction center proteins for energy application make them useful in solar energy conversion to hydrogen fuel or electrical energy. Almost unity charge separation quantum yield and its rapid speed of ~1ns, absorbance region in visible light (480~740 nm) and high proportion of photosynthetically active solar energy of 48.5% allowed photosystem1 to exploited as a bio-material for photo-energy devices. Directionality of photosystem1 in electron transfer can solve main problem in two-step water splitting process where back reaction deteriorates the overall efficiency. In the study, photosystem1 was extracted from spinach and the photo-induced excited electron in the reaction center was utilized in various field of light energy application. First, hydrogen evolving system realized by photodeposition of platinum at the end of the electron transfer chain, with combining specific semiconductor to oxidize water in the first step of Z-scheme. The evaluation by gas-chromatography demonstrated hydrogen evolution through the system. For the further application of photoelectrical material on electrode, photosystem1 have been controlled by copper ion, which is expected to assemble photosystem in specific orientation followed by maximized photoelectrical ability of film. The research proposed concrete methods for combining natural protein and artificial materials in one system and suggested possibility of designing interface between biological and inorganic materials.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.22 no.6
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• pp.574-581
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• 2012

Condition-based maintenance(CBM) has been used as a useful concept for optimizing maintenance plan and decreasing maintenance cost in several kinds of plant sites. This study introduced an example that developed an integrated management system for maintenance parameters and hydraulic turbine of hydro-power plant in order to improve its maintenance strategy as applying CBM techinique. The integrated management system consists of three parts. One is a hardware part including PDA inspection system and several kind of precision measuring instruments. Another is a vibration monitoring system on hydraulic turbine. The other is a software part that takes charge of making hierarchy tree of maintenance parameters and their inspection route, managing accumulated database, assessing health condition of components, and supporting interface with other enterprise management system. The system has been installed at Chuncheon hydro-power plant for test and demonstration. It is expected that the system can contribute database construction for diagnostics and prognostics on facility health condition and systematic accumulation of know-how on operation and maintenance of plant.

• Journal of the Korean Society of Propulsion Engineers
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• v.17 no.4
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• pp.32-42
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• 2013

We study the gap effect on detonating high explosives using numerical simulation. The characteristic acoustic impedance theory is applied to understand the reflection and transmission phenomena associated with gap test of high explosives and solid propellants. A block of charge with embedded multiple gaps is detonated at one end to understand the ensuing detonation propagation through pores and non uniformity of the tested material. A high-order multimaterial simulation provides a meaningful insight into how material interface dynamics affect the ignition response of energetic materials under a shock loading.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.44-48
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• 2017

We explain optical and electrical properties of top and bottom-emission structured alternating-current powder electroluminescent devices (ACPELDs) with Ga-doped ZnO(GZO) transparent electrode. The top-emission ACPELDs were layered as the metal electrode/dielectric layer/emission layer/top transparent electrode and the bottom-emission ACPELDs were structured as the bottom transparent electrode/emission layer/dielectric layer/metal electrode. The yellow-emitting ZnS:Mn, Cu phosphor and the barium titanate dielectric layers were layered through the screen printing method. The GZO transparent electrode was deposited by the sputtering, its sheet resistivity is $275{\Omega}/{\Box}$. The transparency at the yellow EL peak was 98 % for GZO. Regardless of EL structures, EL spectra of ACPELDs were exponentially increased with increasing voltages and they were linearly increased with increasing frequencies. It suggests that the EL mechanism was attributed to the impact ionization by charges injected from the interface between emitting phosphor layer and the transparent electrode. The top-emission structure obtained higher EL intensity than the bottom-structure. In addition, charge densities for sinusoidal applied voltages were measured through Sawyer-Tower method.

• Journal of Electrochemical Science and Technology
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• v.13 no.4
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• pp.479-485
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• 2022

The power of energy storage devices is characterized by capacitance and the internal resistance. The capacitance is measured on an assumption that the charges are stored at the electrode interface and the electric double layer behaves like an ideal capacitor. However, in most cases, the electric double layer is not ideal so a constant phase element (CPE) is used instead of a capacitor to describe the practical observations. Nevertheless, another problem with the use of the CPE is that CPE does not give capacitance directly. Fortunately, a few methods were suggested to evaluate the effective capacitance in the literature. However, those methods may not be suitable for supercapacitors which are modeled as an equivalent circuit of a CPE and resistor connected in series because the time constant of the equivalent circuit is not clearly studied. In this report, in order to study the time constant of the CPE and find its equivalent capacitor, AC and DC methods are utilized in a complementary manner. As a result, the time constants in the AC and DC domains are compared with digital simulation and a proper equation is presented to calculate the effective capacitance of a supercapacitor, which is extended to an electrochemical system where faradaic and ohmic processes are accompanied by imperfect charge accumulation process.

• Journal of Drive and Control
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• v.20 no.4
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• pp.17-26
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• 2023

A forklift is an industrial vehicle that lifts or transports heavy objects using a hydraulically operated fork, and is equipped with an automatic transmission for the convenience of repetitive transportation, loading, and unloading work. The Transmission Control Unit (TCU) is a key component in charge of the shift control function of an automatic transmission. It consists of an electric circuit with an input/output signal interface function and firmware running on a microcontroller. To develop TCU firmware, the development process of shifting algorithm design, firmware programming, verification test, and performance improvement must be repeated. A simulator is a device that simulates a mechanical system having dynamic characteristics in real time and simulates various sensor signals installed in the system. The embedded transmission simulator is a simulator that is embedded in the TCU firmware. information related to the mechanical system that is necessary for TCU normal operation. In this study, an embedded transmission simulator applied to the originally developed forklift TCU firmware was designed and used to verify various forklift shift control algorithms.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.91-96
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• 2005

The silicon-on-insulator (SOI) wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by SRIM simulation that 65keV proton implantation is required for a SOI wafer (200nm SOI, 400nm BOX) fabrication. In order to investigate the optimum proton dose and primary annealing condition for wafer splitting, the surface morphologic change has been observed such as blistering and flaking. As a result, effective dose is found to be in the $6\~9\times10^{16}\;H^+/cm^2$ range, and the annealing at $550^{\circ}C$ for 30 minutes is expected to be optimum for wafer splitting. Direct wafer bonding is performed by joining two wafers together after creating hydrophilic surfaces by a modified RCA cleaning, and IR inspection is followed to ensure a void free bonding. The wafer splitting was accomplished by annealing at the predetermined optimum condition, and high temperature annealing was then performed at $1,100^{\circ}C$ for 60 minutes to stabilize the bonding interface. TEM observation revealed no detectable defect at the SOI structure, and the interface trap charge density at the upper interface of the BOX was measured to be low enough to keep 'thermal' quality.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.6
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• pp.709-714
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• 2018

This study researched the reasons for changing polarity in accordance with junction properties in an interface of semiconductors. The contact properties of semiconductors are related to the effect of the semiconductor's device. Therefore, it is an important factor for understanding the junction characteristics in the semiconductor to increase the efficiency of devices. For generation of various junction properties, carbon-doped silicon oxide (SiOC) was deposited with various argon (Ar) gas flow rates, and the characteristics of the SiOC was varied based on the polarity in accordance with the Ar gas flows. Tin-doped zinc oxide (ZTO) as the conductor was deposited on the SiOC as an insulator to research the conductivity. The properties of the SiOC were determined from the formation of a depletion layer by the ionization reaction with various Ar gas flow rates due to the plasma energy. Schottky contact was good in the condition of the depletion layer, with a high potential barrier between the silicon (Si) wafer and the SiOC. The rate of ionization reactions increased when increasing the Ar gas flow rate, and then the potential barrier of the depletion layer was also increased owing to deficient ions from electron-hole recombination at the junction. The dielectric properties of the depletion layer changed to the properties of an insulator, which is favorable for Schottky contact. When the ZTO was deposited on the SiOC with Schottky contact, the stability of the ZTO was improved by the ionic recombination at the interface between the SiOC and the ZTO. The conductivity of ZTO/SiOC was also increased on SiOC film with ideal Schottky contact, in spite of the decreasing charge carriers. It increases the demand on the Schottky contact to improve the thin semiconductor device, and this study confirmed a high-performance device owing to Schottky contact in a low current system. Finally, the amount of current increased in the device owing to ideal Schottky contact.

• Journal of the Korean Electrochemical Society
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• v.1 no.1
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• pp.33-39
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• 1998

To AC impedance study was performed in this study on the interfacial reaction between organic electrolyte and amorphous tungsten oxides thin film, cathodically coloring oxide, prepared by e-beam evaporation method in the 1 M $LiClO_4/PC$ organic solution. The electrochemical reactions at the interface were analyzed by the transient method and the complex impedance spectroscopy. The impedance spectrums showed that the electro-chemical intercalation of lithium cations was consisted of the following three steps; the first step, the charge transfer reaction of lithium cation at the interface between amorphous tungsten oxides thin film and the organic electrolyte, the second step, the adsorption of lithium atom on the surface of amorphous tungsten oxides thin film, and then the third step, the absorption and the diffusion of lithium atom into amorphous tungsten oxides thin layer. The bleaching and the coloring characteristics of amorphous tungsten oxides thin film were explained in terms of thermodynamic and kinetic variables, the simulated $R_{ct},\;C_{dl},\;D$ and $\sigma_{Li}$ by CNLS fitting method. Especially it was found that the limiting values of electrochromic reaction were the molar ratio of lithium, y=0.167 and the electrode potential, E=2.245 V (vs. Li).

• Journal of Adhesion and Interface
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• v.22 no.3
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• pp.91-97
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• 2021

By introducing an organic interlayer on the Parylene C dielectric surface, the electrical device performances and the operating stabilities of organic field-effect transistors (OFETs) were improved. To achieve this goal, hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (ODTS), as the organic interlayer materials, were used to control the surface energy of the Parylene C dielectrics. For the bare case used with the pristine Parylene C dielectrics, the field-effect mobility (μ_FET) and threshold voltage (V_th) of dinaphtho[2,3-b:2',3'-f ]thieno[3,2-b]- thiophene (DNTT) FET devices were measured at 0.12 cm²V^-1s^-1 and - 5.23 V, respectively. On the other hand, the OFET devices with HMDS- and ODTS-modified cases showed the improved μ_FET values of 0.32 and 0.34 cm²V^-1s^-1, respectively. More important point is that the μ_FET and V_th of the DNTT FET device with the ODTS-modified Parylene C dielectric presented the smallest changes during a repeated measurement of 1000 times, implying that it has the most stable operating stability. The results could be meaned that the organic interlayer, especially ODTS, effectively covers the Parylene C dielectric surface with alkyl chains and reduces the charge trapping at the interface region between active layer and dielectric, thereby improving the electrical operating stability.