• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.417-417
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• 2016

Global environmental deterioration has become more serious year by year and thus scientific interests in the renewable energy as environmental technology and replacement of fossil fuels have grown exponentially. Photoelectrochemical (PEC) cell consisting of semiconductor photoelectrodes that can harvest light and use this energy directly to split water, also known as photoelectrolysis or solar water splitting, is a promising renewable energy technology to produce hydrogen for uses in the future hydrogen economy. A major advantage of PEC systems is that they involve relatively simple processes steps as compared to many other H2 production systems. Until now, a number of materials including TiO2, WO3, Fe2O3, and BiVO4 were exploited as the photoelectrode. However, the PEC performance of these single absorber materials is limited due to their large charge recombinations in bulk, interface and surface, leading low charge separation/transport efficiencies. Recently, coupling of two materials, e.g., BiVO4/WO3, Fe2O3/WO3 and CuWO4/WO3, to form a type II heterojunction has been demonstrated to be a viable means to improve the PEC performance by enhancing the charge separation and transport efficiencies. In this study, we have prepared a triple-layer heterojunction BiVO4/WO3/SnO2 photoelectrode that shows a comparable PEC performance with previously reported best-performing nanostructured BiVO4/WO3 heterojunction photoelectrode via a facile solution method. Interestingly, we found that the incorporation of SnO2 nanoparticles layer in between WO3 and FTO largely promotes electron transport and thus minimizes interfacial recombination. The impact of the SnO2 interfacial layer was investigated in detail by TEM, hall measurement and electrochemical impedance spectroscopy (EIS) techniques. In addition, our planar-structured triple-layer photoelectrode shows a relatively high transmittance due to its low thickness (~300 nm), which benefits to couple with a solar cell to form a tandem PEC device. The overall PEC performance, especially the photocurrent onset potential (Vonset), were further improved by a reactive-ion etching (RIE) surface etching and electrocatalyst (CoOx) deposition.

• 공업화학
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• 제9권3호
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• pp.377-382
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• 1998

본 연구는 낮은 활성으로 활용성이 제한된 ${\gamma$-알루미나의 이용을 높이기 위하여 표면을 처리한 알루미나의 계면전기적 특성과 표면활성간의 상관성을 규명하기 위하여 수행되었다. 질산알루미늄을 출발 물질로 하고 암모니아수를 침전제로 사용하여 제조한 알루미나와 황산, 질산, 염산으로 표면 처리한 알루미나를 질량이동법과 site-binding theory를 이용하여 영점전하점을 측정하였다. Amine Titration법과 Hammett 지시약법으로 표면활성점을 구하였다. 전해질에 분산된 알루미나의 계면특성은 전위차적정방법에 의하여 측정된 표면 전하밀도값을 이용하여 분석하였다. 표면전하밀도와 산량의 결과를 이용하여 얻은 ${\gamma$-알루미나의 표면특성과 계면전기적 특성의 상관성은 다음과 같다. 표면을 처리하지 않은 알루미나는 $H_o{\leq}+9.3$인 조건에서 소성온도가 증가함에 따라 산도는 감소한다. 표면처리한 알루미나는 표면을 처리하는 데 사용한 음이온의 농도가 증가하면 표면 이온화상수와 영점전하점은 감소한다. 표면을 처리한 알루미나의 표면전하밀도와 산량은 $H_o{\leq}+4.8$인 조건에서 다음과 같은 상관관계를 갖는다. $SO_4^2-/Al_2O_3:Q_A=-0.172ln(0.0418{\sigma}+1.448)$ $NO_3^-/Al_2O_3:Q_A=-0.024{\sigma}-0.0189$ $Cl^-/Al_2O_3:Q_A=-0.01{\sigma}-0.2006$.

• 전기화학회지
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• 제3권3호
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• pp.131-135
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• 2000

[ $LiMn_2O_4$ ]박막전지의 충방전 사이클에 따른 용량 감소의 원인을 파악하기 위하여, $LiMn_2O_4/1M\;LiClO_4-PC/Li$전지를 구성하여 충방전 사이클에 따른 AC impedance분석을 수행하였다. 적절한 등가회로를 이용하여 비선형 최소자승 맞춤에서 얻은 값이 Impedance측정 결과와 잘 일치하였다. 충방전에 따른 정전용량은 초기의 급격한 감소를 보인 이후 완만한 감소를 보였다. 충방전 사이클이 초기 70-100사이클까지는 저항 성분 중 양극전해질 계면의 전하 전달저항 성분이 급격히 증가하다가 이후 안정된 값을 보임으로 초기 급격한 용량변화의 원인으로 파악되었다. 전하전달 저항이 안정된 이후에는 Warburg저항이 충방전에 따라 조금씩 증가하였으며, LiMn2O4박막의 화학확산 계수가 사이클에 따라 초기 $5.15\times10^{-11}cm^2/sec$에서 800사이클이 지난 후 $6.3\times10^{-12}cm^2/sec$로 점차 감소하는 것이 관찰되어 100사이클이 후의 용량감소의 지배적 원인으로 파악하였다. Warburg저항의 증가는 Jahn-Teller변형 또는 Mn용해에 의한 것으로 추정하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1712-1714
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• 2004

During the last 20 years organic semiconductors have attracted considerable attention due to their interesting physical properties followed by various technological applications in the area of electronics and opto-electronics. It has been a long time since organic solar cells were expected as a low-cost energy-conversion device. Although practical use of them has not been achieved, technological progress continues. Morphology of the materials, organic/inorganic interface, metal cathodes, molecular packing and structural properties of the donor and acceptor layers are essential for photovoltaic response. We have fabricated solar cell devices based on zinc-phthalocyanine(ZnPc) as donor(D) and fullerine($C_{60}$) as electron acceptor(A) with doped charge transport layers, $Alq_3$ as an electron transport or injection layer. We observed the photovoltaic characteristics of the solar cell devices using the Xe lamp as a light source.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.230-230
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• 2012

Graphene have showed promising performance as electrodes of organic devices such as organic transistors, light-emitting diodes, and photovoltaic solar cells. In particular, among various organic materials of graphene-based organic devices, pentacene has been regarded as one of the promising organic material because of its high mobility, chemical stability. In the bottom-contact device configuration generally used as graphene based pentacene devices, the morphology of the organic semiconductors at the interface between a channel and electrode is crucial to efficient charge transport from the electrode to the channel. For the high quality morphology, understanding of initial stages of pentacene growth is essential. In this study, we investigate self-assembly of pentacene molecules on graphene formed on a 6H-SiC (0001) substrate by scanning tunneling microscopy. At sub-monolayer coverage, adsorption of pentacene molecules on epitaxial graphene is affected by $6{\times}6$ pattern originates from the underlying buffer layer. And the orientation of pentacene in the ordered structure is aligned with the zigzag direction of the edge structure of single layer graphene. As coverage increased, intermolecular interactions become stronger than molecule-substrate interaction. As a result, herringbone structures the consequence of higher intermolecular interaction are observed.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권1호
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• pp.40-49
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• 2001

We have developed a repeatable process of forming uniform, small-size and high-density self-assembled Si nano-crystals. The Si nano-crystals were fabricated in a conventional LPCVD (low pressure chemical vapor deposition) reactor at $620^{\circ}c$ for 15 sec. The nano-crystals were spherical shaped with about 4.5 nm in diameter and density of $5{\times}l0^{11}/$\textrm{cm}^2$. More uniform dots were fabricated on nitride film than on oxide film. To take advantage of the above-mentioned characteristics of nitride film while keeping the high interface quality between the tunneling dielectrics and the Si substrate, nitride-oxide tunneling dielectrics is proposed in n-channel device. For the first time, the single electron effect at room temperature, which shows a saturation of threshold voltage in a range of gate voltages with a periodicity of ${\Delta}Ｖ_{GS}\;{\approx}\;1.7{\;}V$, corresponding to single and multiple electron storage is reported. The feasibility of p-channel nano-crystal memory with thin oxide in direct tunneling regime is demonstrated. The programming mechanisms of p-channel nano-crystal memory were investigated by charge separation technique. For small gate programming voltage, hole tunneling component from inversion layer is dominant. However, valence band electron tunneling component from the valence band in the nano-crystal becomes dominant for large gate voltage. Finally, the comparison of retention between programmed holes and electrons shows that holes have longer retention time.

• Corrosion Science and Technology
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• 제17권2호
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• pp.54-59
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• 2018

The effect of external DC electric field on atmospheric corrosion behavior of zinc under a thin electrolyte layer (TEL) was investigated by measuring open circuit potential (OCP), cathodic polarization curve, and electrochemical impedance spectroscopy (EIS). Results of OCP vs. time curves indicated that the application of external DC electric field resulted in a negative shift of OCP of zinc. Results of cathodic polarization curves measurement and EIS measurement showed that the reduction current of oxygen increased while charge transfer resistance ($R_{ct}$) decreased under the external DC electric field. Variation of OCP negative shift, reduction current of oxygen, and $R_{ct}$ increase with increasing of external DC electric field strength as well as the effect of external DC electric field on double-layer structure in the electrode/electrolyte interface and ions distribution in thin electrolyte layer were analyzed. All results showed that the external DC electric field could accelerate the corrosion of zinc under a thin electrolyte layer.

• 대한기계학회논문집
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• 제15권1호
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• pp.163-168
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• 1991

본 연구에서는 여러가지의 성형조건에서 미끄름을 지배하는 상수를 측정하고, 유동 선단(flow front)에 미치는 이 상수의 영향을 검토한다. 또 측정된 상수를 가 지고 사각형 및 중공 원형 평판 압축성형에 대해서 2차원 유한 요소해석을 하고 실험 결과와 비교 검토한다.

• 한국진공학회지
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• 제16권3호
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• pp.227-230
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• 2007

리튬이온 제조공정에서 전해질 주입 후 반드시 거쳐야 하는 숙성공정은 일반적으로 별로 중요하게 다루어 지지 않고 있다. 왜냐하면 전지 숙성공정이 전지성능에 영향을 주는 인자에 대하여 그다지 깊이 있게 연구가 되어있지 않기 때문이다. 하지만 숙성공정 중에 나타나는 OCV 변화는 전해질 내에 포함되어 있는 성분이 전극으로 전기화학적 흡착되어 나타나는 현상으로 SEI 피막 형성에 매우 중요한 역할을 하게 된다. 이에 본 연구에서는 숙성기간 중에 변하게 되는 OCV와 SEI피막의 관계, 그리고 전지성능과의 연계에 대하여 깊이 있게 논의하고자 한다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.200-200
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• 2003

Polycrystalline Si(polysilicon) TFTs have opened a way for the next generation of display devices, due to their higher mobility of charge carriers relative to a-Si TFTs. The polysilicon W applications extend from the current Liquid Crystal Displays to the next generation Organic Light Emitting Diodes (OLED) displays. In particular, the OLED devices require a stricter control of properties of gate oxide layer, polysilicon layer, and their interface. The polysilicon layer is generally obtained by annealing thin film a-Si layer using techniques such as solid phase crystallization and excimer laser annealing. Typically laser-crystallized Si films have grain sizes of less than 1 micron, and their electrical/dielectric properties are strongly affected by the presence of grain boundaries. Impedance spectroscopy allows the frequency-dependent measurement of impedance and can be applied to inteface-controlled materials, resolving the respective contributions of grain boundaries, interfaces, and/or surface. Impedance spectroscopy was applied to laser-annealed Si thin films, using the electrodes which are designed specially for thin films. In order to understand the effect of grain size on physical properties, the amorphous Si was exposed to different laser energy densities, thereby varying the grain size of the resulting films. The microstructural characterization was carried out to accompany the electrical/dielectric properties obtained using the impedance spectroscopy, The correlation will be made between Si grain size and the corresponding electrical/dielectric properties. The ramifications will be discussed in conjunction with active-matrix thin film transistors for Active Matrix OLED.