• Korean Journal of Materials Research
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• v.18 no.3
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• pp.153-158
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• 2008

Fe-aluminides have the potential to replace many types of stainless steels that are currently used in structural applications. Once commercialized, it is expected that they will be twice as strong as stainless steels with higher corrosion resistance at high temperatures, while their average production cost will be approximately 10% of that of stainless steels. Self-propagating, high-temperature Synthesis (SHS) has been used to produce intermetallic and ceramic compounds from reactions between elemental constituents. The driving force for the SHS is the high thermodynamic stability during the formation of the intermetallic compound. Therefore, the advantages of the SHS method include a higher purity of the products, low energy requirements and the relative simplicity of the process. In this work, a Fe-aluminide intermetallic compound was formed from high-purity elemental Fe and Al foils via a SHS reaction in a hot press. The formation of iron aluminides at the interface between the Fe and Al foil was observed to be controlled by the temperature, pressure and heating rate. Particularly, the heating rate plays the most important role in the formation of the intermetallic compound during the SHS reaction. According to a DSC analysis, a SHS reaction appeared at two different temperatures below and above the metaling point of Al. It was also observed that the SHS reaction temperatures increased as the heating rate increased. A fully dense, well-bonded intermetallic composite sheet with a thickness of $700\;{\mu}m$ was formed by a heat treatment at $665^{\circ}C$ for 15 hours after a SHS reaction of alternatively layered 10 Fe and 9 Al foils. The phases and microstructures of the intermetallic composite sheets were confirmed by EPMA and XRD analyses.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.706-714
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• 1995

Silicon oxide thin films were deposited by remote plasma chemical vapor deposition (RPCYD). The effect of the operating variables, such as plasma power, deposition temperature and partial pressure of reactant on the material Properties of the silicon oxide film was investigated. By XPS, it was found out that the film was suboxide (O/Si<2) and small amount of nitrogen due to the plasma excitation was accumulated at the Si/SiO$_2$interface. The amount of dangling bonds at the Si/SiO$_2$interfaces were measured by ESR and the concentration of hydrogen bond was obtained by SIMS and FT-IR. The bond angle distribution(d$\theta$/$\theta$) was shown to be similiar to thermal oxide above 20$0^{\circ}C$ but the etch rate was higher than that of the thermal oxides due to the structural difference and the stress between silicon substrate and silicon oxide film.

• Progress in Superconductivity and Cryogenics
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• v.14 no.4
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• pp.50-53
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• 2012

This paper describes experimental study on GM-type pulse tube refrigerator (PTR). In a PTR, the pulse tube is only filled with working gas and there exists secondary flow due to a large temperature difference between cold-end and warm-end. The stability of secondary flow is affected by orientation of cold-head and thus, the cooling performance is deteriorated by gas mixing due to secondary flow. In this study, a single stage GM-type pulse tube refrigerator is fabricated and tested. The cooing performance of the fabricated PTR is measured as varying cold-head orientation angle and the results are used as reference data. Then, we divided interior space of pulse tube into three segments, and fixed the various size of screen mesh at interface of each segment to suppress the performance degradation due to secondary flow. For various configuration of pulse tube, no-load test and heat load test are carried out with the fixed experimental condition of charging pressure, operating frequency and orifice valve turns. From experimental results, the fine screen mesh shows the effective suppression of performance degradation for the large orientation angle, but the use of screen mesh cause the loss of cooling capacity rather than the case of no insertion into pulse tube. It should be compromised whether the use of screen mesh in consideration of the installation limitation of a GM-type pulse tube refrigerator.

• Journal of the Korean Society of Safety
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• v.29 no.4
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• pp.9-14
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• 2014

Self-piercing riveting(SPR) is a mechanical fastening technique which is put pressure on the rivet for joining the sheets. Unlike a spot welding, SPR joining does not make the harmful gas and $CO_2$ and needs less energy consumption. In this study, static and fatigue tests were conducted using tensile-shear specimens with Al-5052 plates for evaluation of fatigue strength of the SPR joints. During SPR joining process for the specimen, using the current sheet thickness and a rivet, the optimal applied punching force was found to be 21 kN. And, the maximum static strength of the specimen produced at the optimal punching force was 3430 N. During the fatigue tests for the specimens, interface failure mode occurred on the top substrate close to the rivet head in the most high-loading range region, but on the bottom substrate close to the rivet tail in the low -loading range region. There was a relationship between applied load amplitude $P_{amp}$ and lifetime of cycle N for the tensile-shear, $P_{amp}=3395.5{\times}N^{-0.078}$. Using the stress-strain curve of the Al-5052 from tensile test, the simulations for fatigue specimens have been carried out using the implicit finite element code ABAQUS. The relation between von-Mises equivalent stress amplitude and number of cycles was found to be ${\sigma}_{eq}=514.7{\times}N^{-0.033}$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.1-2
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• 2000

In chip plating, several parameters must be taken into consideration. Current density, solution concentration, pH, solution temperature, components volume, chip and media ratio, barrel geometrical shape were most likely found to have an effect to the process yields. The 3 types of barrels utilized in chip plating industry are the onventional rotating barrel, vibrational barrel(vibarrel), and the centrifugal type. Conventional rotating barrel is a close type and is commonly used. The components inside the barrel are circulated by the barrel's rotation at a horizontal axis. Process yield has known to have higher thickness deviation. The vibrational barrel is an open type which offers a wide exposure to electrolyte resulting to a stable thickness deviation. It rotates in a vertical axis coupled with multi-vibration action to facilitate mixed up and easy transportation of components. The centrifugal barrel has its plated work centrifugally compacted against the cathode ring for superior electrical contact with simultaneous rotary motion. This experiment has determined the effect of barrel vibration intensity to the plating thickness distribution. The procedures carried out in the experiment involved the overall plating process., cleaning, rinse, Nickel plating, Tin-Lead plating. Plating time was adjusted to meet the required specification. All other parameters were maintained constant. Two trials were performed to confirm the consistency of the result. The thickness data of the experiment conducted showed thatbthe average mean value obtained from higher vibrational intensity is nearer to the standard mean. The distribution curve shown has a narrower specification limits and it has a reduced variation around the target value. Generally, intensity control in vi-barrel facilitates mixed up and easy transportation of components. However, it is desirable to maintain an optimum vibration intensity to prevent solution intrusion into the chips' internal electrode. A cathodic reaction can occur in the interface of the external and internal electrode. 2H20 + e $\rightarrow$M/TEX> 20H + H2.. Hydrogen can penetrate into the body and create pressure which can cause cracks. At high intensity, the chip's motion becomes stronger, its contact between each other is delayed and so plating action is being controlled. However, the strong impact created by its collision can damage the external electrode's structure there by resulting to bad plating condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.573-578
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• 2003

Low temperature selective epitaxial growth of Si and SiGe has been obtained using an industrial single wafer chemical vapor deposition module operating at reduced pressure. Epitaxial Si and heteroepitaxial SiGe deposition with Ge content about 20 % has been studied as extrinsic base for self-aligned heterojunction bipolar transistors(HBTs), which helps to reduce the parasitic resistance to obtain higher maximum oscillation frequencies(f$\_$max/). The dependence of Si and SiGe deposition rates on exposed windows and their evolution with the addition of HCl to the gas mixture are investigated. SiH$_2$Cl$_2$ was used as the source of Si SEG(Selective Epitaxial Growth) and GeH$_4$ was added to grow SiGe SEG. The addition of HCl into the gas mixture allows increasing an incubation time even low growth temperature of 675∼725$^{\circ}C$. In addition, the selectivity is enhanced for the SiGe alloy and it was proposed that the incubation time for the polycrystalline deposit on the oxide is increased probably due to GeO formation. On the other hand, when only SiGe SEG(Selective Epitaxial Growth) layer is used for extrinsic base, it shows a higher sheet resistance with Ti-silicide because of Ge segregation to the interface, but in case of Si or Si/SiGe SEG layer, the sheet resistance is decreased up to 70 %.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.82-87
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• 1998

In the oxidation process of the $NH_3/O_2$ oxidation method, adding $NH_3$ gas to $O_2$ gas, the detected outlet gases in the reaction quartz chamber are N2, $O_2$ and $H_2O$ and in addition, a very small quantity of $CO_2$, NO and $NO_2$ are detected. Two kinds of species ($O_2$ and H2O) contribute to oxidation, so the growth rate is determined by oxidation temperature and by also partial pressure of the NH3 and $O_2$ gases. The slop of growth rate is identified to be medial and in parallel between that of the dry and wet oxidation. Auger electron spectroscopy (AES) indicates that $NH_3/O_2$ oxide film has a certain stoichiomerty of $SiO_2$, this oxidation method restrains the generation of defects in the $SiO_2/Si$ interface, minimizing fixed charges. The breakdown voltage of $NH_3/O_2$ oxide film (470$\AA$) is 57.5 volts, and the profile of the C-V curve including flat band voltage (0.29 volts) agree with the ideal curve.

• Proceedings of the Membrane Society of Korea Conference
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• 1998.10a
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• pp.15-18
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• 1998

Membrane reactors are systems which combine a chemical reactor with a membrane separation process allowing to carry out simultaneously conversion and product separation. The catalyst can be immobilized on the membrane or simply compartmentalized in a reaction space by the membrane. Membrane reactors are today investigated to produce optically pure isomers and/or resolve racemic mixture of enantiomers. The interest towards these systems is due to the increasing demand of enantiomerically pure compounds to be used in the pharmaceutical, food, and agrochemical industries. In fact, enantiomers can have different biological activities, which often influence the efficacy or toxicity of the compound. On the basis of current literature there are basically two schemes on the use of membrane technology to produce enantiomers. In one case, the membrane itseft is intrinsically enantioselective: the membrane is the chiral system which selectively separates the wanted isomer on the basis of its conformation. In the other, a kinetic resolution using an enantiospecific biocatalyst is combined with a membrane separation process; the membrane separates the product from the substrate on the basis of their relative chemical properties (i.e. solubility). This kind of configuration is widely used to carry out kinetic resolutions of low water soluble substrams in biphasic membrane reactors [Giomo, 1995, 1997; Lopez, 1997]. These are systems where enzyme-loaded membranes promote reactions between two separate phases thanks to the properties of enzymes, such as lipases, to catalyse reactions at the org ic/aqueous interface; the two phases are maintained in contact and separated at the membrane level by operating at appropriate transmembrane pressure. A schematic representation of biphasic membrane reactor is shown in figure 1, while an example of enantiospecific reaction and product separation carried out with these systems is reported in figure 2.

• Journal of Welding and Joining
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• v.7 no.3
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• pp.19-27
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• 1989

Both the SS41 steel and the M.E.F(martensite encapsulated islands of frrite) dual phase steel made of SS41 steel by heat treatment were welded by friction welding, and then manufactured machinemade Vnotch standard Charpy impact specimens and precracked with a fatigue system at BM(base metal), HAZ(heat affected zone) and WZ(weld interface Zone). The impact test of them was performed with an instrumented impact test machine at a number of temperatures in constant loading velocity and the dynamic fracture characteristics were studied on bases of the absorbed energy, dynamic fracture toughness and fractography from the test. The results obtained are as follows; At the room temperature, the absorbed energy is HAZ.geq.WZ.geq.BM in case of the M.E.F. dual phase steel: BM.geq.HAZ.geq.WZ in case of the SS41 steel, HAZ.geq.BM.geq.WZ at the low temperature. The absorbed energy is decreased markedly with the temperature lowering; it is highly dependent on the temperature. The dynamic fracture toughness of the M.E.F. dual phase steel is HAZ.geq.WZ.geq.BM at the room temperature; BM.geq.WZ.geq.HAZ below-60.deg. C. Therefore the reliability of friction welding is uncertain at the low temperature(below-60.deg. C). The dynamic fracture toughness of the SS41 steel; HZA.geq.WZ.geq.BM at overall temperature region. The flaw formed by rotational upsetting pressure was shown y SEM; in this region. The absorbed energy per unit area and dynamic fracture toughness were low relative to other region.

• Journal of Welding and Joining
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• v.26 no.5
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• pp.79-89
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• 2008

With the increased use of surface textured steel sheet in body-in-white assembly, resistance spot weldability of these steels is considered to be an important subject. This study evaluated nugget formation and weldability by measuring dynamic resistance with various weld pressure, current, and weld time for steel sheet with two different surface roughnesses. The surface roughness for T-H steel ($R_{a}=1.70\;{\mu}m$) was higher than that for T-L steel ($R_{a}=1.33\;{\mu}m$), and resulted in increased contact resistance and heating for T-H steel spot welding. Therefore, at low weld current and weld cycle ranges, the T-H steel showed better weldability over the T-L steel. The evaluations of weld interface showed that the fusion zone in the T-H steel sheet was continuous in contrast to discontinuous fusion zone for T-L steel sheet at the same welding conditions. A comparison of dynamic resistance and tensile-shear strength (TSS) between T-H and T-L steel sheet suggested that high surface roughness provided larger heating at early cycle of welding and larger TSS.