• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.12
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• pp.3626-3631
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• 2009

This study has provided some of the first experimental results of NMOSFET hot-carrier degradation for the analog circuit application. After hot-carrier stress under the whole range of gate voltage, the degradation of NMOSFET characteristics is measured in saturation region. In addition to interface states, the evidences of hole and electron traps are found near drain depending on the biased gate voltage, which is believed to the cause for the variation of the transconductance($g_m$) and the output conductance($g_{ds}$). And it is found that hole trap is a dominant mechanism of device degradation in a low-gate voltage saturation region, The parameter degradation is sensitive to the channel length of devices. As the channel length is shortened, the influence of hole trap on the channel conductance is increased. Because the magnitude of $g_m$ and $g_{ds}$ are increased or decreased depending on analog operation conditions and analog device structures, careful transistor design including the level of the biased gate voltage and the channel length is therefore required for optimal voltage gain ($A_V=g_m/g_{ds}$) in analog circuit.

• Journal of Sensor Science and Technology
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• v.29 no.4
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• pp.266-269
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• 2020

In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In_0.7Ga_0.3As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In_0.7Ga_0.3As QW MOSFETs with and without (NH₄)₂S treatment and then deposited 1/4 nm of Al₂O₃/HfO₂ through atomic layer deposition. The devices with S-passivation exhibited lower values of subthreshold swing (74 mV/decade) and drain-induced barrier lowering (19 mV/V) than the devices without S-passivation. A conductance method was applied, and a low value of interface trap density D_it (2.83×10¹² cm^-2eV^-1) was obtained for the devices with S-passivation. Based on these results, interface traps between InGaAs and high-κ are other defect sources that need to be considered in future studies to improve III-V microsensor sensing platforms.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.1
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• pp.41-45
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• 2014

We have investigated the passivation property of $SiN_x$ and $SiO_2$ thin films formed using various process conditions for the application of crystalline Si solar cells. An increase in the thickness of $SiN_x$ deposited using plasma enhanced chemical vapor deposition (PECVD) led to the improvement of passivation quality. This could be associated with the passivation of Si dangling bonds by hydrogen atoms which were supplied during PECVD deposition. The $SiO_2$ thin films grown using dry oxidation process exhibited better passivation behavior than those using wet oxidation process, implying the dry oxidation process was more effective in the formation of high quality $SiO_2$ thin films. The relative effective life time gradually decreased with increasing dry oxidation temperature. Such a degradation of passivation behavior could be attributed to the increase in interface trap density caused by thermal damages.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.334.2-334.2
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• 2016

Silicon nitride (SiNx:H) films are generally used as passivation layer on solar cell and they are usually made by plasma enhanced chemical vapor deposition (PECVD). In this study, we investigated the properties of silicon nitride (SiNx:H) films made by PECVD. Effects of mixture ratio of process gases with silane (SiH4) and ammonia (NH3) on the passivation qualities of silicon nitride film are evaluated. Passivation properties of SiNx:H are focused by making antireflection properties identical with thickness and refractive index controlled. The absorption coefficient of each film was evaluated by spectrometric ellipsometery and the minority carrier lifetimes were evaluated by quasi-steady-state photo-conductance (QSSPC) measurement. The optical properties were obtained by UV-visible spectrophotometer. The interface properties were measured by capacitance-voltage (C-V) measurement and the film components were identified by Fourier transform infrared spectroscopy (FT-IR) and Rutherford backscattering spectroscopy detection (RBS) - elastic recoil detection (ERD).

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.350-355
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• 2001

We have investigated characteristics of ZnSe epilayer grown by molecular beam epitaxy(MBE) on semi-insulating(SI) GaAs by using surface photovoltage(SPV). The measurements of SPV were performed with illumination intensity and modulation frequency. The bandgap energy of ZnSe epilayer was determined from derivative surface photovoltage (DSPV). The five states were observed at room temperature(RT), and those states relate to the impurity and defect formed hetero-interface of ZnSe and GaAs during the sample growth. The observed states represented as a tendency of typical extrinsic transition on the increasing illumination intensity. The 1s and 2s signals related to the excitonic absorption were not observed at RT, but those were presented with the splitted of two peaks in the SPV at 80 K. From the modulation frequency dependence, we obtained the junction conductance and capacitance of the sample.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.597-597
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• 2013

The resistive switching behaviors of Pt nanodisk on Nb-doped SrTiO3 single-crystal have been studied with conductive atomic force microscopy in ultra-high vacuum. The nanometer sizes of Pt disks were formed by using self-assembled patterns of silica nanospheres on Nb-doped SrTiO3 single-crystal semiconductor film using the Langmuir-Blodgett, followed by the metal deposition with e-beam evaporation. The conductance images shows the spatial mapping of the current flowing from the TiN coated AFM probe to Pt nanodisk surface on Nb：STO single-crystal substrate, that was simultaneously obtained with topography. The bipolar resistive switching behaviors of Pt nanodisk on Nb：STO single-crystal junctions was observed. By measuring the current-voltage spectroscopy after the forming process, we found that switching behavior depends on the charging and discharging of interface trap state that exhibit the high resistive state (HRS) and low resistive state (LRS), respectively. The results suggest that the bipolar resistive switching of Pt/Nb:STO single-crystal junctions can be performed without the electrochemical redox reaction between tip and sample with the potential application of nanometer scale resistive switching devices.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.60-66
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• 1998

The hot carrier induced performance degradation of 0.8${\mu}{\textrm}{m}$ RF NMOSFET has been investigated within the general framework of the degradation mechanism. The device degradation model of an unit finger gate MOSFET could be applied for the device degradation of the multi finger gate RF NMOSFET. The reduction of cut-off frequency and maximum frequency can be explained by the transconductance reduction and the drain output conductance increase, which are due to the interface state generation after the hot carrier stressing. From the correlation between hot carrier induced DC and RF performance degradation, we can predict the RF performance degradation just by the DC performance degradation measurement.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.382.1-382.1
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• 2014

Graphene field-effect transistors (GFET) is one of candidates for future high speed electronic devices since graphene has unique electronic properties such as high Fermi velocity (vf=10^6 m/s) and carrier mobility ($15,000cm^2/V{\cdot}s$) [1]. Although the contact property between graphene and metals is a crucial element to design high performance electronic devices, it has not been clearly identified. Therefore, we need to understand characteristics of graphene/metal contact in the GFET. Recently, it is theoretically known that graphene on metal can be doped by presence of interface dipole layer induced by charge transfer [2]. It notes that doping type of graphene under metal is determined by difference of work function between graphene and metal. In this study, we present the GFET fabricated by contact metals having high work function (Pt, Ni) for p-doping and low work function (Ta, Cr) for n-doping. The results show that asymmetric conductance depends on work function of metal because the interfacial dipole is locally formed between metal electrodes and graphene. It induces p-n-p or n-p-n junction in the channel of the GFET when gate bias is applied. In addition, we confirm that charge transfer regions are differently affected by gate electric field along gate length.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.176-183
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• 1995

The present work is concerned with the switching conduction characteristics of PI LB films in metal insulator metal sandwiches. By applying various DC voltage bias to MIM junctions, conduction characteristics of junctions can be changed between the high-voltage low-current(off) condition, the low-voltage high-current (on) condition and the medium(mid) condition. Switching conduction characteristics can be also observed in MIM junctions employing some aromatic compounds as insulators. Switching conduction characteristics is assumed to be owing to the existence of aromatic rings, space charge in films, impurities on metal-insulator interface, and difference in work functions of base and top electrodes metal. To study the conduction process of on, off, and mid conductions, we measured I-V, d$^{2}$V/d I$^{2}$-V characteristics of junctions with several different top electrodes under various temperatures. Small conductance changes of junctions can be measured by observing the second derivative, d$^{2}$V/dI$^{2}$, of I-V curve. A dynamical technique is used to get the second derivatives. That is, a finite modulation of the current is applied to the junctions and the second harmonic of the voltage is detected.

• Journal of Energy Engineering
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• v.24 no.1
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• pp.114-122
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• 2015

In the high convective gas flow condition, irregular shaped water waves from which droplet entrainment occurs are generated under horizontally stratified two-phase flow condition. KAERI proposed a new mechanistic droplet entrainment model based on the momentum balance equation consisting of the shear stress, surface tension, and gravity forces. However, this model requires correlation or experimental data of several physical parameters related to the wave characteristics. In the present study, we tried to measure the physical parameters such as wave slope, wave hypotenuse length, wave velocity, wave frequency, and wavelength experimentally. For this, an experiment was conducted in the horizontal rectangular channel of which width, height, and length are, respectively, 40 mm, 50 mm, and 4.2 m. In the present test, the working fluids are chosen as air and water. The PIV technique was applied not only to obtain images for phase interface waves but also to measure the velocity field of the water flow. Additionally, we developed the parallel wire conductance probe for the confirmation of wave height from PIV image. Finally, we measured the physical parameters to be used in the validation of new droplet entrainment model.