• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.370-373
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical Planarization(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper depostion is a mature process from a historical point of view, but a very young process from a CMP persperspective. While copper electrodepostion has been used and stuidied for dacades, its application to Cu damascene wafer processing is only now ganing complete accptance in the semiconductor industry. The polishing mechanism of Cu CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper pasivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.20-23
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing(CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical polishing(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commercial slurries pads, and post-CMP cleaning alternatives are discuss, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper deposition is a mature process from a historical point of view, but a very young process from a CMP perspective. While copper electro deposition has been used and studied for decades, its application to Cu damascene wafer processing is only now gaining complete acceptance in the semiconductor industry. The polishing mechanism of Cu-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper passivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제11권2호
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• pp.650-669
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• 2017

Coordinated multiple points transmission and reception (CoMP) technology is used to mitigate the inter-cell interference, and increase cell average user normalized throughput and cell edge user normalized throughput. There are two kinds of radio resource schedule strategies in LTE-A/5G CoMP system, and they are called centralized scheduling strategy and distributed scheduling strategy. The regional centralized scheduling cannot solve interference of inter-region, and the distributed scheduling leads to worse efficiency in the utilize of resources. In this paper, a novel distributed scheduling scheme named 9-Cell alternate authorization (9-CAA) is proposed. In our scheme, time-domain resources are divided orthogonally by coloring theory for inter-region cooperation in 9-Cell scenario [6]. Then, we provide a formula based on 0-1 integer programming to get chromatic number in 9-CAA. Moreover, a feasible optimal chromatic number search algorithm named CNS-9CAA is proposed. In addition, this scheme is expanded to 3-Cell scenario, and name it 3-Cell alternate authorization (3-CAA). At last, simulation results indicate that 9/3-CAA scheme exceed All CU CoMP, 9/3C CU CoMP and DLC resource scheduling scheme in cell average user normalized throughput. Especially, compared with the non-CoMP scheme as a benchmark, the 9-CAA and 3-CAA have improved the edge user normalized throughput by 17.2% and 13.0% respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.246-249
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• 2000

The effects of Zr on the mechanical workability and tensile strength of Cu-Ni-Mn-Sn-Al alloys have been investigated and the following results were obtained. The mechanical workability of Cu-Ni-Mn-Sn-Al alloys are increased with addition of Zr. And the surface cracks of specimen were not produced in Zr added Alloys. Especially in condition of hot-worked beyond the 90% working ratio, Zr contained specimen showed intra-granule crack propagation but Zr-free specimen showed inter-granule mode. The tensile strength have maximum value in 0.05% Zr contained alloy. The aging mechanism of Cu-Ni-Mn-Sn-Al alloys were varied by Zr addition.

• 방송공학회논문지
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• 제19권3호
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• pp.405-414
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• 2014

HEVC는 재귀적 쿼드 트리 구조를 갖는 CU를 부호화에 적용함으로써 높은 부호화 효율을 얻었다. 그러나 이러한 재귀적 쿼드 트리 구조는 HEVC의 부호화 복잡도를 매우 증가시키는 결과를 가져왔다. 본 논문에서는 이러한 재귀적 쿼드 트리 구조 안에서 빠른 CU 결정이 가능한 알고리즘을 제안한다. 제안하는 알고리즘은 CTU 부호화가 이루어지기 전에 미리 초기 CU 크기를 예측하고, CU 부호화 과정에서 CBF와 PU 모드 예측 비용을 이용한 조건을 확인하여 고속 CU 결정이 이루어지도록 한다. 또한 인터 PU 모드 예측과정에서 얻은 CBF값들을 이용하여 인트라 모드 예측 생략이 가능하다. 실험결과, 제안한 알고리즘의 조건에 포함된 가중치값에 따라 최대 평균 49.91%, 37.97%의 부호화 시간 감소 효과를 얻을 수 있었다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.191.2-191.2
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• 2007

• Bulletin of the Korean Chemical Society
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• 제32권7호
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• pp.2489-2492
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• 2011

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.114.1-114.1
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• 2008

• Transactions on Electrical and Electronic Materials
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• 제10권4호
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• pp.135-139
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• 2009

$H_2S$ micro-gas sensors have been developed employing $SnO_2$:CuO composite thin films. The films were prepared by e-beam evaporation of Sn and Cu metals on silicon substrates, followed by oxidation at high temperatures. Results of various studies, such as scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) reveal that $SnO_2$ and CuO are mutually non-reactive. The CuO grains, which in turn reside in the inter-granular regions of $SnO_2$, inhibit grain growth of $SnO_2$ as well as forming a network of p-n junctions. The film showed more than a 90% relative resistance change when exposed to $H_2S$ gas at 1 ppm in air at an operating temperature of $350^{\circ}C$ and had a short response time of 8 sec.

• 대한의용생체공학회:의공학회지
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• 제20권6호
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• pp.539-546
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• 1999

현재 상용화되고 있는 치과용 76.5% Pd-11.2% Cu-7.2% GarP 합금의 왁스모형을 원심주조기로 주조하여, 임상조건의 탈개스 및 세라믹 소성처리를 하였다. 이에따른 각각의 시편에 대해 미세조직의 변화를 주사전자현미경 및 EDS로 관찰하고, 최종적인 투과전자현미경으로 조사하였다. 각 조건의 편석, 결정립계 및 석출물부위를 주사전자현미경과 EDS 고 관찰한 결과, 이원계 Pd-GA합금의 안정상들에 해당하는 정량적인 조성비는, 단지 상대적으로 Ga의 성분비만 높게 감지되었다. 특히, 세라믹소성 처리후 미세조직에서 형성된 석출물에 근접한 기지조직일수록 Ga의 농도가 상대적으로 줄어든 고갈현상을 확인하엿다. 또한 투과전자현미경의 제한시야회절도형 분석결과, 주조 및 탈개스처리 후 미세조직의 편석부위에서는 GA의 가장 큰 강도를 보였고, 또 Ga과 Pd 고용체 사이에 미세한 판상의 석출물에 기인하는 줄무늬를 관찰하였다. 한편, 세라믹소성처리후 미세조직의 석출물은 금속간화합물 Pd2Ga으로 밝혀졌으며, 기지조직은 <100> 방향을 따라 약 25nm의 폭을 가지는 미세한 섬유상 형태의 소위 "tweed 조직'을 형성하였다.성하였다.