• Korean Chemical Engineering Research
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• v.62 no.4
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• pp.296-311
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• 2024

Several experimental and Computational Fluid Dynamics (CFD) methods have been developed to analyze and describe macromixing processes in a rotating bar reactor (RBR). This review provides an overview of the measurement methods of macromixing and delivers an assessment based on the concentration field. The concentrations are directly used to define the intensity of segregation (I_s), and can reflect macromixing in a rotating bar reactor. Additionally, shows the investigations of the techniques available for portraying the intensity of segregation. This research is organized into three primary sections. The initial two sections focus on the overarching trends associated with the implementation of Conductivity, Planar Laser-Induced Fluorescence, and Electrical Resistance Tomography methods in RBR. An examination of the procedural steps, materials utilized, and the associated calculations was conducted. The final section addresses the simulation model of Computational Fluid Dynamics (CFD), detailing the necessary parameters, including the equations employed, boundary conditions, and the calculation procedures for determining the intensity of segregation. Subsequently, the study elucidates the feasibility of employing CFD as a precise technique for evaluating macromixing. The experimental techniques available were reviewed and compared in terms of their advantages, disadvantages, characterization capabilities, and scope of application.

• Journal of the Korean Society of Industry Convergence
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• v.7 no.4
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• pp.349-354
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• 2004

The growth mode of the Si layers which were grown on Si(111) by using Ag as surfactant were investigated by intensity oscillations of the RHEED specular spot at the different temperatures. we found that the introduction of Ag as the surfactant alters the growth mode from a three-dimensional clustering mechanism to a two-dimensional layer-by-layer growth. In the growth of Si layers on Si(111) with a surfactant Ag, At $450^{\circ}C$, RHEED intensity oscillation was very stable and periodic from early stage of deposition to 32 ML. RHEED patterns during homoepitaxial growth at $450^{\circ}C$ was changed from $7{\times}7$ structure into ${\sqrt{3}}{\times}{\sqrt{3}}$ structures. Since the ${\sqrt{3}}{\times}{\sqrt{3}}$ structure include no stacking fault, the stacking fault layer seems to be reconstructed into normal stacking one at transition from the $7{\times}7$ structure to a ${\sqrt{3}}{\times}{\sqrt{3}}$ one. We also found that the number of the intensity oscillation of the specular spot for Si growth with a surfactant Ag was more than for Si growth without a surfactant. This result may be explained that the activation energy decrease for the surface diffusion of Si atoms due to segregation of the surfactant toward the growing surface.

• Journal of the Korean Ceramic Society
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• v.31 no.9
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• pp.941-948
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• 1994

An underwater grout on material resistance against segregation in water were studied by water soluble polymer (methyl cellulose and acrylic acid ester and styrene). The mechanical properties of the grout agents were investigated through the observation of the microstructure and application of fracture mechanic. When the soluble polymer MC+AAES added with 0.6 wt% to the underwater grout agents the compressive strength, flexural strength and Young's modulus were about 58 MPa, 10 MPa and 3.2 GPa respectively, and critical stress intensity was about 0.8 MNm-1.5. It can be considered that the strength improvement and fracture toughness increase may be due to the pore decrease and bonding force by material resistance against segregation in water.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.4
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• pp.306-317
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• 1995

Abstract Gallium arsenide crystal is usually grown from the melt by the horizontal Bridgman method. We constructed pseudo - steady - state model for crystal growth of GaAs which inclue melt, crystal and the free interface. Mathematical equations of the model were solved for flow, temperature, and concentration field in the melt and temperature field in the crystal. The location and shape of the interface were also solved simultaneously. In 2 - dimensional model, the shape of the interface is flat with adiabatic thermal boundary condition, but it becomes curved with completely conducting thermal boundary condition. In 3 - dimensional model, the interface is less curved than 2 - dimensional case and the flow intensity is similar to that of 2 - dimensional case. With the increase of flow intensity vertical segregation shows maximum value in both 2 - and 3 - D model. However, the maximum value occurs in lower flow intensity in 2 - D model because the interface is more curved for the same flow intensity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.1
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• pp.19-31
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• 1996

To invetigate the impurity distribution in GaAs crystal grown by horizontal Bridgman method, we constructd the mathematical model describing heat transfer, mass transfer and fluid flow n transient growth of GaAs. Galerkin finite element method and implicit time integration were used to solve the equations and simulate the transient growth. The concentration distribution is similar to the case of diffusion controlled growth when Gr - 0. With the increase of Gr the concentration profile is distroted and the minimum solute concentration appears near the interface. As solidification prosceeds, interface deflection increases steadily and transverse segregation increases until mixing by flow becomes steady. The axial segregation increases with solidification. But, with high intensity of flow axial segregation becomes steady after short transient. At small and large Gr the result showed a good agreememt with the prediction Smith and Scheil.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.8
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• pp.966-971
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• 1988

AES was used to study oxygen adsorption due to the oxygen exposure at 300\ulcorner temperature and segregation of impurities due to annealing on polycrystal copper surface. The intensity of peak of CuM2, 3VV and CuL3 VV increased with annealing time and the peak of CKLL increased after Ar ion bombardment. The effect of oxygen adsorption on copper surface at 300\ulcorner was verified by the decreased of peak of CuM2, 3VV and CuL3 VV as oxygen exposure increase. The binding energy of copper atoms gradualy shifts from 0.7eV to 1.5eV of copper atoms gradually shifts from 0.7eV to 1.5eV after a oxygen exposure. After the oxygen exposure, the width at half the height of CuM2, 3VV is larger 2V*C/S by the effect of chemical liaison of the copper aton with oxygen atom.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.1195-1200
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• 2004

A fully coupled fluid flow, heat, and solute transport model was developed to investigate turbulent flow, solidification, and macrosegregation in a continuous casting process of steel slab with EMBR. Transport equations of mass, momentum, energy, and species for a binary iron-carbon alloy system were solved using a continuum model. The electromagnetic field was described by the Maxwell equations. A finite-volume method was employed to solve the conservation equations associated with appropriate boundary conditions. The effects of intensity of magnetic field and carbon segregation were investigated. The electromagnetic field reduces the velocity of molten flow in the mold and an increase in the percentage of C in steel results in a decrease of carbon segregation ratio.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.77-81
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• 1998

The eptiaxial growth of Ge on the clean and surfactant (Sn) adsorbed surface of Ge(111) was studied by the intensity oscillation of a RHEED specular spot. In the case of epitaxial growth without the adsorbed surfactant, the RHEED intensity oscillation was stable and periodic up to 24 ML at the substrate temperature of $200^{\circ}C$. Therefore the optimum temperature for the epitaxial growth of Ge on clean Ge(111) seems to be $200^{\circ}C$. However, in the case of epitaxial growth with the adsorbed surfactant, the irregular oscillations are observed in the early stage of the growth. The RHEED intensity osicillation was very stable and periodic up to 38 ML, and the d2$\times$2 structure was not charged with continued adsorption of Ge at the substrate temperature of 2002$\times$2. These results may be explained by the fact that the diffusion length of Ge atoms is increased by decreasing the activation energy of the Ge surface diffusion, resulted by segregation of Sn toward the growing surface.

• Journal of the Korean Society of Industry Convergence
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• v.4 no.4
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• pp.451-455
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• 2001

The epitaxial growth of Ge on the clean and surfactant(Sn) adsorbed surface of Ge(111) was studied by the intensity oscillation of a RHEED specular spot. In the case of epitaxial growth without the adsorbed surfactant, the RHEED intensity oscillation was stable and periodic up to 24ML at the substrate temperature of $200^{\circ}C$. Therefore the optimum temperature for the epitaxial growth of Ge on clean Ge(111) seems to be $200^{\circ}C$. However, in the case of epitaxial growth with the adsorbed surfactant, the irregular oscillations are observed in the early stage of the growth. The RHEED intensity oscillation was very stable and periodic up to 38ML, and the $d2{\times}2$ structure was not charged with continued adsorption of Ge at the substrate temperature of $200^{\circ}C$. These results may be explained by the fact that the diffusion length of Ge atoms is increased by decreasing the activation energy of the Ge surface diffusion, resulted by segregation of Sn toward the growing surface. From the desorption process, the desorption energy of Sn in Ge $\sqrt{5}{\times}\sqrt{5}$ structure is observed to be 3.28eV.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.210-222
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• 1994

The characteristics of flows, temperatures, and concentrations of oxygen are numerically studies in the Czochralski furnace with a uniform axial magnetic field. Important governing factors to the flow fields include buoyancy, thermocapillarity, centrifugal force, magnetic force, diffusion and segregation coefficients of the oxygen, evaporation coefficient in the form of SiO, and ablation rate of crucible wall. With an assumption that the flow fields have reached the steady state, which means that two velocity components in the meridional plane and circumferential velocity, temperatures, electric current intensity become non-transient, then unsteady concentration field of oxygen has been analyzed with an initially uniform oxygen concentration. Oxygen transports due to convection and diffusion in the Czochralski flow field and oxygen flux through the growing crystal surface has been investigated.