• Transactions on Electrical and Electronic Materials
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• v.6 no.2
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• pp.57-62
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• 2005

Using intense pulsed ion beam evaporation technique, we have succeeded in the preparation of poly crystalline silicon thin films without impurities on silicon substrate. Good crystallinity and high deposition rate have been achieved without heating the substrate by using lEE. The crystallinity of poly-Si film has been improved with the high density of the ablation plasma. The intense diffraction peaks of poly-Si thin films could be obtained by using the substrate bias system. The crystallinity and the deposition rate of poly-Si thin films were increased by applying (-) bias voltage for the substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.131-132
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• 2006

We experimentally demonstrated the synthesis of silicon nanoparticles by using high-density ablation plasma prepared by the interaction of an intense pulsed light-ion beam (LIB) with a target. known as the intense pulsed ion beam evaporation (IBE) method. Light emission was obtained from the silicon nanoparticles. It was determined that the ambient gas reaction is very important and useful method to obtain the photoluminescence from the silicon nanoparticles.

• 한국신재생에너지학회:학술대회논문집
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• 2005.11a
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• pp.666-666
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• 2005