• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.24-25
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• 2008

An Electrostatic discharge (ESD) protection has been a very important reliability issue in microelectronics, especially for RF (Radio Frequency) integrated circuits (ICs). This paper reviews design and analysis of on-chip ESD (electrostatic discharge) protection circuits for RF applications. Key issues in RF ESD protection, design methods, and RF ESD protection solutions are discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.4
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• pp.445-453
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• 2015

A fully integrated cost-effective and low-power single chip Lithium-Ion (Li-Ion) battery protection IC (BPIC) for portable devices is presented. The control unit of the battery protection system and the MOSFET switches are integrated in a single package to protect the battery from over-charge, over-discharge, and over-current. The proposed BPIC enters into low-power standby mode when the battery becomes over-discharged. A new auto release function (ARF) is adopted to release the BPIC from standby mode and safely return it to normal operation mode. A new delay shorten mode (DSM) is also proposed to reduce the test time without increasing pin counts. The BPIC implemented in a $0.18-{\mu}m$ CMOS process occupies an area of $750{\mu}m{\times}610{\mu}m$. With DSM enabled, the measured test time is dramatically reduced from 56.82 s to 0.15 s. The BPIC chip consumes $3{\mu}A$ under normal operating conditions and $0.45{\mu}A$ under standby mode.

• Journal of Korea Society of Digital Industry and Information Management
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• v.5 no.4
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• pp.87-97
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• 2009

Internet network routing system is used to prevent spread and distribution of malicious data traffic. This study is based on analysis of diagnostic weakness structure in the network security domain. We propose an improved integrated multi-level protection domain for in the internal route of groupware. This paper's protection domain is designed to handle the malicious data traffic in the groupware and finally leads to lighten the load of data traffic and improve network security in the groupware. Infrastructure of protection domain is transformed into five-stage blocking domain from two or three-stage blocking. Filtering and protections are executed for the entire server at the gateway level and internet traffic route ensures differentiated protection by dividing into five-stage. Five-stage multi-level network security domain's malicious data traffic protection performance is better than former one. In this paper, we use a trust evaluation metric for measuring the security domain's performance and suggested algorithm.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.1094-1097
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• 2005

It is issued that protecting and managing a copyright are very important to a digitization of multimedia contents. We analyze the trend of a multimedia service, IPMP(Intellectual Property Management and Protection), DMP(Digital Media Project), ENTHRONE(End-to-end Qos through Integrated Management of Content, Networks and Terminals), and DRM(Digital Rights Management). All of these techniques are for developing solution about protection and management of the copyright and media service. These have been at the head of the growth of the whole media service, but cause problems such as a illegal copy and distribution. To solve these problems, researchers are performing many projects.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.2
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• pp.150-154
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• 2019

In the design of semiconductor integrated circuits, ESD is one of the important issues related to product quality improvement and reliability. In particular, as the process progresses and the thickness of the gate oxide film decreases, ESD is recognized as an important problem of integrated circuit design. Many ESD protection circuits have been studied to solve such ESD problems. In addition, the proposed device can modify the existing SCR structure without adding external circuit to effectively protect the gate oxide of the internal circuit by low trigger voltage, and prevent the undesired latch-up phenomenon in the steady state with high holding voltage. In this paper, SCR-based novel ESD(Electro-Static Discharge) device with the high holding voltage has been proposed. The proposed device has the lower triggering voltage without an external trigger circuitry and the high holding voltage to prevent latch-up phenomenon during the normal condition. Using TCAD simulation results, not only the design factors that influence the holding voltage, but also comparison of conventional ESD protection device(ggNMOS, SCR), are explained. The proposed device was fabricated using 0.35um BCD process and was measured electrical characteristic and robustness. In the result, the proposed device has triggering voltage of 13.1V and holding voltage of 11.4V and HBM 5kV, MM 250V ESD robustness.

• Proceedings of the KIEE Conference
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• 2000.07a
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• pp.200-202
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• 2000

The protective relaying setting job which has been performed manually, takes a long time and is vulnerable to errors. The goal of this paper is to develop the user-friendly interface for integrated protection system environment and to control protection-related jobs and the database management efficiently and conveniently.

• Proceedings of the Korea Institute of Fire Science and Engineering Conference
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• 2005.05a
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• pp.267-271
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• 2005

• International Journal of Computer Science & Network Security
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• v.22 no.8
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• pp.413-419
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• 2022

To have a complete and comprehensive understanding of the research subject and to form an integrated legal framework for it, I have sought comprehensively to cover the major written literature on the issue under consideration. I also benefitted from a wide range of research and academic studies pertaining to the same topic, although that literature did not specifically address the issue of consumer rights in electronic contracting in the Saudi e-commerce system. Rather, it addressed only the civil and criminal protection of the consumer in e-commerce.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.47-51
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• 2013

A high power MOSFET switch based on a 0.35 ${\mu}m$ CMOS process has been developed for the protection IC of a rechargeable battery. In this process, a vertical double diffused MOS (VDMOS) using 3 ${\mu}m$-thick epi-taxy layer is integrated with a Zener diode. The p-n+Zener diode is fabricated on top of the VDMOS and used to protect the VDMOS from high voltage switching and electrostatic discharge voltage. A fully integrated digital circuit with power devices has also been developed for a rechargeable battery. The experiment indicates that both breakdown voltage and leakage current depend on the doping concentration of the Zener diode. The dependency of the breakdown voltage on doping concentration is in a trade-off relationship with that of the leakage current. The breakdown voltage is obtained to exceed 14 V and the leakage current is controlled under 0.5 ${\mu}A$. The proposed integrated module with the application of the power MOSFET indicates the high performance of the protection IC, where the overcharge delay time and detection voltage are controlled within 1.1 s and 4.2 V, respectively.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2006.06a
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• pp.239-245
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• 2006