• Architectural research
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• v.22 no.2
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• pp.41-52
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• 2020

Laboratory buildings with specialized equipment and ventilation systems pose challenges in terms of efficient energy use and initial construction costs. Additionally, lab spaces should have flexible and efficient layouts and provide a comfortable indoor research environment. Therefore, this study aims to identify the correlation between the facade of a building and its interior layout from case studies of energy-efficient research labs and to propose passive energy design strategies for the establishment of an optimal research environment. The case studies in this paper were selected from the American Institute of Architects Committee on the Environment Top Ten Projects and Leadership in Energy and Environmental Design (LEED) certified research lab projects. In this paper, the passive design strategies of space zoning, façade design devices to control heating and cooling loads were analyzed. Additionally, the relationships between these strategies and the interior lab layouts, lab support spaces, offices, and circulation areas were examined. The following four conclusions were drawn from the analysis of various cases: 1) space zoning for grouping areas with similar energy requirements is performed to concentrate similar heating and cooling demands to simplify the HVAC loads. 2) Public areas such as corridor, atrium, or courtyard can serve as buffer zones that employ passive solar design to minimize the mechanical energy load. 3) A balanced window-to-wall ratio (WWR), exterior shading devices, and natural ventilation systems are applied according to the space programming energy requirements to minimize the dependence on mechanical service. 4) Lastly, typical laboratory space zoning categories can be revised, reversed, and even reconfigured to minimize the energy load and adjust to the site context. This study can provide deep insights into various design strategies employed for construction of green laboratories along with intuitive arrangement of various building components such as laboratory spaces, lab support spaces, office spaces, and common public areas. The key findings of this study can contribute towards creating improved designs of laboratory facilities with reduced carbon footprint and greenhouse emissions.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1673-1675
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• 2004

The design, modeling and measurement of RF switch module for GSM applications is presented in this paper. RF switch module is constructed using a LTCC multi-layer switching circuit and integrated low pass filter. Insertion and return loss of the low pass filter were designed less than 0.3 dB and better than 12.7 dB at 900 MHz. The RF switch module contained 10 embedded passives and 3 surface mount components integrated on $4.6{\times}4.8{\times}1.2$ mm, 6-layer multi-layer integrated circuit. The insertion loss of switch module was measured at 900 MHz was 11 dB.

• ETRI Journal
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• v.25 no.2
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• pp.65-72
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• 2003

To achieve cost and size reductions, we developed a low cost manufacturing technology for RF substrates and a high performance passive process technology for RF integrated passive devices (IPDs). The fabricated substrate is a conventional 6" Si wafer with a 25${\mu}m$ thick $SiO_2$ surface. This substrate showed a very good insertion loss of 0.03 dB/mm at 4 GHz, including the conductive metal loss, with a 50 ${\Omega}$ coplanar transmission line (W=50${\mu}m$, G=20${\mu}m$). Using benzo cyclo butene (BCB) interlayers and a 10 ${\mu}m$ Cu plating process, we made high Q rectangular and circular spiral inductors on Si that had record maximum quality factors of more than 100. The fabricated inductor library showed a maximum quality factor range of 30-120, depending on geometrical parameters and inductance values of 0.35-35 nH. We also fabricated small RF IPDs on a thick oxide Si substrate for use in handheld phone applications, such as antenna switch modules or front end modules, and high-speed wireless LAN applications. The chip sizes of the wafer-level-packaged RF IPDs and wire-bondable RF IPDs were 1.0-1.5$mm^2$ and 0.8-1.0$mm^2$, respectively. They showed very good insertion loss and RF performances. These substrate and passive process technologies will be widely utilized in hand-held RF modules and systems requiring low cost solutions and strict volumetric efficiencies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.312-315
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• 2001

Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT. polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.312-315
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• 2001

Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT, Polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

• Journal of Advanced Marine Engineering and Technology
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• v.36 no.1
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• pp.149-156
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• 2012

In this study, we propose a novel transmission line employing inverted PACD (Periodically Arrayed Capacitive Devices) for application to a development of miniaturized passive components on MMIC. The novel microstrip line employing Inverted PACD structure showed a loss much lower than conventional microstrip line. Using the inverted PACD structure, we fabricated a miniaturized impedance transformer on MMIC. the size of the impedance transformer was 0.012 $mm^2$, which is only 1.7% of conventional one. The impedance transformer showed good RF performances in a frequency range of 2.25~6.5 GHz.

• Korean Journal of Optics and Photonics
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• v.14 no.5
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• pp.509-514
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• 2003

Mach-Zehnder interferometric wavelength converters with monolithically integrated semiconductor optical amplifiers (SOA's) have been fabricated and characteristics of wavelength conversion at 10 Gb/s have been investigated for wavelength span of 40 nm. The devices have been achieved by using a butt-joint combination of buried ridge structure type SOA's and passive waveguides. In the integration, a new method has been applied that removes p+InP cladding layer leading to high propagation loss and forms simultaneously the current blocking and the cladding layer using undoped InP. The module packaging has been achieved by using a titled fiber array for effective coupling into the tilted waveguide in the wavelength converter. Using the module, wavelength conversion with power penalty lower than 1 ㏈ at 10 Gb/s has been demonstrated for wavelength span of 40 nm. In addition, it is show that the module can provide 2R (re-amplification, re-shaping) operation by demonstrating the conversion with the negative penalty.

• The Transactions of the Korean Institute of Power Electronics
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• v.6 no.6
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• pp.564-571
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• 2001

This paper presents the VLSI design of highly efficient low voltage DC/DC converter for portable devices. All active devices are integrated on a single chip using a standard 0.65$\mu\textrm{m}$ CMOS process. The converter operates at the switching frequency of 1MHz for reducing the size of passive elements and uses a ZVS for minimizing the switching loss at high frequency. Simulation results show that the circuit can achieve a 95% efficiency when the output voltage is controlled to be 2V with the load of lW.

• Smart Structures and Systems
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• v.18 no.5
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• pp.955-982
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• 2016

Recent studies integrating vibration control and structural health monitoring (SHM) use control devices and control algorithms to enable system identification and damage detection. In this study real-time SHM is used to enhance structural vibration control and reduce damage. A newly proposed control algorithm, including integrated real-time SHM and semi-active control strategy, is presented to mitigate both damage and seismic response of the main structure under strong seismic ground motion. The semi-active independently variable stiffness (SAIVS) device is used as semi-active control device in this investigation. The proper stiffness of SAIVS device is obtained using a new developed semi-active control algorithm based on real-time damage tracking of structure by damage detection algorithm based on identified system Markov parameters (DDA/ISMP) method. A three bay five story steel braced frame structure, which is equipped with one SAIVS device at each story, is employed to illustrate the efficiency of the proposed algorithm. The obtained results show that the proposed control algorithm could significantly decrease damage in most parts of the structure. Also, the dynamic response of the structure is effectively reduced by using the proposed control algorithm during four strong earthquakes. In comparison to passive on and off cases, the results demonstrate that the performance of the proposed control algorithm in decreasing both damage and dynamic responses of structure is significantly enhanced than the passive cases. Furthermore, from the energy consumption point of view the maximum and the cumulative control force in the proposed control algorithm is less than the passive-on case, considerably.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.3
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• pp.31-36
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• 2000

We developed embedded inductors in MCM-D substrate for RF applications. The increasing demand for high density packaging was the driving forces to the development of MCM-D technology. Most of these development efforts have been focused on high performance digital circuits. However, recently there is a great need fur mixed mode circuits with a combination of digital, analog and microwave devices. Mixed mode modules often have a large number of passive components that are connected to a small number of active devices. Integration of passive components into the high density MCM substrate becomes desirable to further reduce cost, size, and weight of electronic systems while improving their performance and reliability. The proposed MCM-D substrate was based on Cu/photosensitive BCB multilayer and Ti/Cu is used to form the interconnect layer. Seed metal was formed with 1000 $\AA$ Ti/3000 $\AA$ Cu by sputtering method and main metal was formed with 3 $\mu\textrm{m}$ Cu by electrical plating method. The multi-turn sprial inductors were designed in coplanar fashion. This paper describe the manufacturing process of integrated inductors in MCM-D substrate and the results of electrical performance test.