• 제목/요약/키워드: Integrated Passive Devices

검색결과 63건 처리시간 0.029초

선택영역성장 기술을 이용한 전광 논리소자용 광소자의 제작 및 측정 (Fabrication and Measurement of All-Optical Logic Device by Using Selective Area Growth Technology)

  • 손창완;윤태훈;이석
    • 한국광학회지
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    • 제18권1호
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    • pp.50-55
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    • 2007
  • 본 연구에서는 광통신 시스템에 있어서 필수적인 기능으로 전망되고 있는 전광 논리소자를 구현하기 위한 집적된 광소자를 제작, 측정 하였다. 유기금속화학증착법(MOCVD)을 이용한 선택영역 성장기술을 이용하여 서로 다른 두 활성영역을 한 기판위에 성장함으로써 능동 반도체 광소자인 반도체 광증폭기와 수동 반도체 광소자인 다중모드 간섭 도파로, S-자 도파로를 집적하였다. 집적된 수동 소자부분의 손실을 측정하고 전광 논리소자를 구현하는 방법 중 하나인 반도체 광증폭기의 cross-gain modulation(XGM)특성을 측정하여 집적된 전광 논리소자로의 사용 가능성을 알아보았다.

실리콘 산화후막 공정과 Cu-BCB 공정을 이용한 고성능 수동 집적회로의 구현과 성능 측정 (Implementation of High-Quality Si Integrated Passive Devices using Thick Oxidation/Cu-BCB Process and Their RF Performance)

  • 김동욱;정인호
    • 한국전자파학회논문지
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    • 제15권5호
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    • pp.509-516
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    • 2004
  • Cu 및 BCB 공정을 사용하여 고성능 RF 수동회로를 실리콘 기판 상에 구현하는 RF 수동 집적회로 공정을 개발하였다. 이러한 기술은 개별 수동소자를 통한 모듈 구현방식보다 훨씬 작고 저렴하며 우수한 성능의 RF모듈을 구현할 수 있게 하였다. 개발된 실리콘 수동 집적회로 공정으로 제작된 내경 225 um, 회전수 2.5의 인덕터는 2.7 nH의 인덕턴스를 가지며 1 ㎓ 이상에서 30 이상의 품질계수를 가지는 것으로 측정되었다. 또한 개발된 인덕터를 사용하여 WLCSP(Wafer Level Chip Scale Package) 형태의 수동회로를 제작하였다. 제작된 저역 여파기는 2차 고조파 억제를 위해 인덕터 내경 안에 병렬공진용 커패시터를 삽입하였고 2.45 ㎓에서 0.5 ㏈ 이하의 삽입손실을 보였다. 그리고 고역 여파기와 저역 여파기 구조를 가지는 발룬 회로는 2.45 ㎓에서 0.5 ㏈ 이하의 삽입손실과 182도의 출력 단자간 위상 차이를 보여주었다.

High Integration Packaging Technology for RF Application

  • Lee, Young-Min
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 1999년도 1st Korea-Japan Advanced Semiconductor Packaging Technology Seminar
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    • pp.127-154
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    • 1999
  • Interconnect - Wire bonding-> Flip chip interconnect ; At research step, Au stud bump bonding seems to be more proper .Package -Plastic package-> $Z_{0}$ controlled land grid package -Flip Chip will be used for RF ICs and CSP for digital ICs -RF MCM comprised of bare active devices and integrated passive components -Electrical design skills are much more required in RF packaging .Passive Component -discrete-> integrated -Both of size and numbers of passive components must be reduced

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Ultra-Wide-Band (UWB) Band-Pass-Filter for Wireless Applications from Silicon Integrated Passive Device (IPD) Technology

  • Lee, Yong-Taek;Liu, Kai;Frye, Robert;Kim, Hyun-Tai;Kim, Gwang;Aho, Billy
    • 마이크로전자및패키징학회지
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    • 제18권1호
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    • pp.41-47
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    • 2011
  • Currently, there is widespread adoption of silicon-based technologies for the implementation of radio frequency (RF) integrated passive devices (IPDs) because of their low-cost, small footprint and high performance. Also, the need for high speed data transmission and reception coupled with the ever increasing demand for mobility in consumer devices has generated a great interest in low cost devices with smaller form-factors. The UWB BPF makes use of lumped IPD technology on a silicon substrate CSMP (Chip Scale Module Package). In this paper, this filter shows 2.0 dB insertion loss and 15 dB return loss from 7.0 GHz to 9.0 GHz. To the best of our knowledge, the UWB band-pass-filter developed in this paper has the smallest size ($1.4\;mm{\times}1.2\;mm{\times}0.40\;mm$) while achieving equivalent electrical performance.

A Study on the Design and Characteristics of thin-film L-C Band Pass Filter

  • Kim In-Sung;Song Jae-Sung;Min Bok-Ki;Lee Won-Jae;Muller Alexandru
    • KIEE International Transactions on Electrophysics and Applications
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    • 제5C권4호
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    • pp.176-179
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    • 2005
  • The increasing demand for high density packaging technologies and the evolution to mixed digital and analogue devices has been the con-set of increasing research in thin film multi-layer technologies such as the passive components integration technology. In this paper, Cu and TaO thin film with RF sputtering was deposited for spiral inductor and MOM capacitor on the $SiO_2$/Si(100) substrate. MOM capacitor and spiral inductor were fabricated for L-C band pass filter by sputtering and lift-off. We are analyzed and designed thin films L-C passive components for band pass filter at 900 MHz and 1.8 GHz, important devices for mobile communication system. Based on the high-Q values of passive components, MOM capacitor and spiral inductors for L-C band pass filter, a low insertion loss of L-C passive components can be realized with a minimized chip area. The insertion loss was 3 dB for a 1.8 GHz filter, and 5 dB for a 900 MHz filter. This paper also discusses a analysis and practical design to thin-film L-C band pass filter.

Aerosol Deposition Method에 의한 수동소자와 능동소자의 동시 직접화를 위한 다양한 유전체 후막 (Various Dielectric Thick Films for Co-Integration of Passive and Active Devices by Aerosol Deposition Method)

  • 남송민
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.348-348
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    • 2008
  • In recent, the concept of system-on-package (SOP) for highly integrated multifunctional systems has been paid attention to for the miniaturization and high frequency of electronic devices. In order to realize SOP, co-integration of passive devices, such as capacitors, resistors and inductors, and active devices should be achieved. If ceramic thick films can be grown at room temperature, we expect to be able to overcome many problems in conventional fabrication processes. So, we focused on the aerosol deposition method (ADM) as room temperature fabrication technology. ADM is a novel ceramic coating method based on the Room Temperature Impact Consolidation (RTIC) phenomena. This method has a wide range potential for fabrication of co-integration of passive and active devices. In this paper, I will present the future potential of ADM introducing various ceramic dielectric thick films for the integration of electronic ceramics.

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A Wireless Identification System Using an Efficient Antenna Based on Passive Surface Acoustic Wave(SAW) Devices

  • Chang, Ki-Hun;Lee, Woo-Sung;Yoon, Young-Joong;Kim, Jae-Kwon;Park, Joo-Yong;Burm, Jin-Wook
    • Journal of electromagnetic engineering and science
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    • 제7권1호
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    • pp.12-16
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    • 2007
  • A UHF band wireless identification system based on passive surface acoustic wave(SAW) devices is presented in this paper. SAW ID tags were fabricated on Y-Z $LiNbO_3$ piezoelectric substrate with a good electro-mechanical coupling property. To reduce degradation of the antenna performance associated with the piezoelectric materials, an efficient design of the SAW RFID antenna is introduced. By measuring the parameters of the SAW ID tag, the performance of the antenna was tested by experimentation.

L-C Library 박막 소자의 제조와 특성에 관한 연구 (The study on Characteristics and Fabrication of L-C Library components)

  • 김인성;민복기;송재성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.861-863
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    • 2003
  • In this work, the preparations and characteristics of capacitors and inductors for RF IC as a integrated devices are investigated. These kinds of capacitors and inductors can be applicable to the passive components utilized in voltage controlled oscillator(VCO), low noise amplifier(LAN), mixer and synthesizer for mobile telecommunication of radio frequency band(900 MHz to 2.2GHz), and in a library of monolithic microwave integrated circuit(MMIC). The results show that these inductors and capacitors array for RF IC may be applicable to the RF IC passive components for mobile telecommunication.

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GaAs 기반 IPD(Integrated Passive Device)를 이용한 Power Divider

  • 유찬세;송생섭;정성훈;이우성;김준철;강남기;서광석
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2008년도 하계종합학술대회
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    • pp.543-544
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    • 2008
  • Nowadays, the research on the system integration using various technologies, like MCM-C, MCM-L and MCM-D. Especially, MCM-D technology is suitable for mmwave application due to its high resolution of patterning and thermal property similar to that of semiconductor devices. In this work, integrated passive devices like inductor, capacitor and resistor are evaluated on the GaAs substrate and their characteristics are examined. And finally, the Wilkinson power divider using lumped IPD are evaluated on GaAs substrate and it shows low insertion loss below 0.5 dB and the isolation over 15 dB.

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MMIC상에서 주기적으로 배치된 용량성 소자를 이용한 단파장 전송선로 (A Short Wavelength Transmission Line Employing Periodically Arrayed Capacitive Devices on MMIC)

  • 정장현;강석엽;윤영
    • Journal of Advanced Marine Engineering and Technology
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    • 제34권6호
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    • pp.840-845
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    • 2010
  • 본 논문에서는 MMIC상에서 온칩용 수동소자 제작을 위해서, 주기적으로 배치된 용량성 소자를 이용한 단파장 전송선로를 제안하였다. 제안된 PACD(periodically arrayed capacitive devices) 선로 구조는 기존의 마이크로스트립 선로에 비해 매우 짧은 선로파장 특성을 보였다. PACD 선로 구조는 주파수 5GHz에서 기존의 마이크로스트립 선로 파장의 8%의 파장단축 효과를 보였고, PPGM구조의 선로 파장의 38%의 파장단축 효과를 나타내었다. 이러한 PACD선로 구조는 MMIC상에서 온칩용 수동소자 제작에 유용한 특성으로 판단된다.