• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.223-229
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• 2017

This paper analyzes the effect of a dual-metal-gate structure on the electrical characteristics of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors. These structures have two gate metals of different work function values (${\Phi}$), with the metal of higher ${\Phi}$ in the source-side gate, and the metal of lower ${\Phi}$ in the drain-side gate. As a result of the different ${\Phi}$ values of the gate metals in this structure, both the electric field and electron velocity in the channel become better distributed. For this reason, the transconductance, current collapse phenomenon, breakdown voltage, and radio frequency characteristics are improved. In this work, the devices were designed and analyzed using a 2D technology computer-aided design simulation tool.

• 전자공학회논문지 IE
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• v.44 no.2
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• pp.21-25
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• 2007

Multilayer transparent electromagnetic wave shielding film with 1 m wide, was fabricated by using roll to roll DC plasma coating with ITO and Ag layer on PET substrate. By optimizing properly the design parameters, such as a processing condition, the surface resistance and the thickness of each layers, the homogeneous film could be obtained. Electromagnetic wave shielding film showed the high shielding effectiveness of 23dB(99.5%) in 2-18 GHz range and the transmittance of 83.1% in 400-700nm.

• ETRI Journal
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• v.36 no.2
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• pp.214-223
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• 2014

A fully-integrated penta-band reconfigurable power amplifier (PA) is developed for handset Tx applications. The output structure of the proposed PA is composed of the fixed output matching network, power and frequency reconfigurable networks, and post-PA distribution switches. In this work, a new reconfiguration technique is proposed for a specific band requiring power and frequency reconfiguration simultaneously. The design parameters for the proposed reconfiguration are newly derived and applied to the PA. To reduce the module size, the switches of reconfigurable output networks and post-PA switches are integrated into a single IC using a $0.18{\mu}m$ silicon-on-insulator CMOS process, and a compact size of $5mm{\times}5mm$ is thus achieved. The fabricated W-CDMA PA module shows adjacent channel leakage ratios better than -39 dBc up to the rated linear power and power-added efficiencies of higher than around 38% at the maximum linear output power over all the bands. Efficiency degradation is limited to 2.5% to 3% compared to the single-band reference PA.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.7
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• pp.747-752
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• 2014

This paper relates 10% shrink from $0.13{\mu}m$ design for logic devices as well as input and output (I/O) circuits, different from the previous shrink methodologies which shrink only core device. Thin gate oxide was changed to decoupled plasma nitridation(DPN) oxide as a thin gate oxide (1.2V) to reduce the flicker noise, resulting in three to five times lower flicker noise than pre-shrink process. Unavoidable issue by shrink is capacitor for this normally metal insulator metal (MIM). To solve this issue, 20% higher unit MIM capacitor ($1.2fF/{\mu}m^2$) was developed and its performance were evaluated.

• Proceedings of the Korean Nuclear Society Conference
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• 1996.05d
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• pp.101-106
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• 1996

For the application of the neutron flux mapping, an accurate calculation of the sensitivity is required because the sensitivity is proportional to the neutron flux density. Sensitivity is defined as the current per unit length per unit neutron flux and it mainly depends on the depression factor(f), the escape probability from the emitter($\varepsilon$1) and the charge build-up factor of the insulator layer(c). A Monte Carlo simulation was accomplished to calculate the sensitivity of rhodium emitter material and alumina(Al$_2$O$_3$) insulator with a cylindrical geometry, based on the (n,${\beta}$) interaction and on other interaction including the secondary electron generation for the more accurate estimation of the sensitivity. From the simulation results, factors fur the sensitivity were accurately calculated and compared with other theoretical and experimental values. In addition, the sensitivity linearly increases and saturates as the emitter radius increases. The accomplished method is useful in the analysis for the change of SPND sensitivity as a function of burn-up and in the optimum design of SPND.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.10
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• pp.51-56
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• 2004

We propose and fabricate an 1${\times}$2 asymmetric optical switch by TOE using SOI wafer based on silicon which has very large TOE figure and it is a good material for optical devices. SOI wafer consists of 3 layers; upper Si layer for device(waveguide;core, n=3.5), buried oxide layer for insulator(clad, n=1.5) and Si substrate layer. We designed 1${\times}$2 asymmetric y-branched single mode optical waveguide switch by BPM simulation and metal heater by heat transfer simulation. Fabricated switch shows about 3.5 watts of power consumption and over 20dB of crosstalk between output channels.

• Journal of Sensor Science and Technology
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• v.21 no.2
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• pp.83-89
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• 2012

A simple array of metal-insulator-metal capacitive elements was proposed for a potential application in humidity sensing platforms. We fabricated meso-scale sensors with different sizes(large-size: $2.7{\times}2.7mm^2$ ; mid-size: $1.5{\times}1.5mm^2$ ; small-size: $0.7{\times}0.7mm^2$) and characterized the performance of each design. Polyimide films were utilized as a humidity-sensitive layer. Capacitance changes of the polyimide layer were measured with respect to water absorption. The device showed sensitivity in the full range of relative humidity (RH) with excellent linearity(correlation coefficient > 0.994). This array structure exhibits unique advantages including easy fabrication process, high batch productivity, and high structural compatibility with various substrate materials. It is anticipated that this device structure will be potentially useful in unique applications including mapping spatial humidity variations over a meso-scale area and implementing flexible humidity sensing element arrays.

• Journal of Electrical Engineering and Technology
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• v.11 no.4
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• pp.961-968
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• 2016

The non-uniform distribution of contamination on insulator surface has appreciable effects on flashover voltage, and corresponding researches are valuable for the better selection of outdoor insulation. In this paper, two typical types of porcelain and glass insulators which are widely used in ac lines were taken as the research subjects, and their corrections of AC flashover voltage under non-uniform pollution were studied. Besides, their flashover characteristics under different ratio (T/B) of top to bottom surface salt deposit density (SDD) were investigated, including the analysis of flashover voltage, surface pollution layer conductivity and critical leakage current. Test results gave the modified formulas for predicting flashover voltage of the two samples, which can be directly applied in the transmission line design. Also, the analysis delivered that, the basic reason why the flashover voltage increases with the decrease of T/B, is due to the decrease of equivalent surface conductivity of the whole surface and the decrease of critical leakage current. This research will be of certain value in providing references for outdoor insulation selection, as well as in proposing more information for revealing pollution flashover mechanism.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2005.05a
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• pp.409-411
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• 2005

In this literature, we mose the design method of a proportional pressure control valve using valve system analysis and finite element method. And it is shown that a manufactured proportional pressure control valve character is well matched to tile theoretical analysis results. Also it is verified that the proposed valve has excellent performance compared to the other foreign products.

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.319-320
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• 2007

We report on the fabrication of two-dimensional Silicon On Insulator (SOI) photonic crystal (PhC) superprism. To optimize the design of 2-D SOI PhC superprism, the photonic band structures (TE-polarization) for triangular lattices and the dispersion surfaces were calculated and analyzed by the plane wave expansion method. Dense 2-D SOI PhC superprism nanostructures with taper input and output waveguide microstructures were successfully fabricated by nanoimprint lithography, followed by inductively coupled plasma (ICP) etching.