• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.136-136
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• 2016

Commonly used oil-based polymer resin has environmental and safety issues. Many researches for replacing the harmful solvent-borne resins to water-borne resins have been investigated to purify harmful environmental resources and follow the export and import of hazardous materials regulations. In this research, ultrasonic spray coatings of aqueous polymer resin were studied to fabricate thin insulating layer (${\sim}{\mu}m$) on the rectangular copper wire. It needs to have appropriate wettability between resin and substrate during the ultrasonic spray coating process to coat aqueous polymer uniformly. Furthermore, stabilities of coating solution and fabricating process are required to form thin insulating layer on the substrate. In here, physical characteristics such as viscosity of 6 types of commercial polymer dispersions and emersions were analyzed to confirm compatibility for ultrasonic spray coating process. These resins were dissolved in isopropyl alcohol, used for true solvent, and were diluted with ethanol, utilized for diluent. Also, solubilities, dispersion characteristics, and viscosities of these diluted polymer resin solutions were confirmed. Dispersion characteristic and viscosity of coating solution affects jetting of ultrasonic spray coating and these jetting characteristics influence morphologies of insulating layer. In conclusion, we have known that aqueous polymer solution should have outstanding dispersion characteristic and certain range of viscosity to fabricate thin polymer insulating layer uniformly with ultrasonic spray coating.

• Journal of Surface Science and Engineering
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• v.32 no.1
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• pp.61-66
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• 1999

The Spin-dependent tunneling magnetoresistance (TMR) effect was observed in $NiFe/Al_2O_3$/Co thin films. The samples were prepared by magnetron sputtering in a system with a base pressure of $3\times10^{-6}$Torr. the insulating $Al_2O_3$layer was prepared by r.f. plasma oxydation method of a metallic Al layer. The ferromagnetic and insulating layers were deposited through metallic masks to produce the cross pattern form. The junction has an active area of $0.3\times0.3\textrm{mm}^2$ and the $Al_2O_3$layer is deposited through a circular mask with a diameter of 1mm. It is very important that insulating layer is formed very thinly and uniformly in tunneling junction. The ferromagnetic layer was fabricated in optimum conditions and the surface of that was very flat, which was observed by AFM. Tunneling junction was confirmed through nonlinear I-V curve. $NiFe/Al_2O_3$/Co junction was observed for magnetization behavior and magnetoresistance property and magnetoresistance property is dependent on magnetization behavior and magnetoresistance property and magnetoresistance property is dependent on magnetization behavior of t재 ferromagnetic layer. The maximum magnetoresistance ratio was about 6.5%.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.9
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• pp.121-127
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• 1995

We have analyzed the double insulating layer consisting of anodic oxide and ZnS through TEM experiments. The use of double insulating layer for HgCdTe surface passivation is one of the promising passivation method which has been recently studied deeply and the double insulating layer is formed by the evaporation of ZnS on the top of anodic oxide layer grown in H$_{2}$O$_{2}$ electrolyte. The structure of anodic oxide layer on HgCdTe is amorphous but the structure of oxide layer after the evaporation of ZnS has been changed to micro-crystalline. The interface layer of 150.angs. thickness has been found between ZnS and anodic oxide layer and is estimated to be ZnO layer. The results of analysis on the chemical components of ZnS, the interface layer and anodic oxide layer have showed that Zn has diffused into the anodic oxide layer deeply while Hg has been significantly decreased from HgCdTe bulk to the top of oxide layer. The formation of ZnO interface layer and the change of structure of anodic oxide layer after the evaporation of ZnS are estimated to be defects or to induce the defects which might possibly affect the increase of the positive fixed charges shown in C-V measurements of HgCdTe MIS.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.145-151
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• 1994

The multi-dielectric layer SiOz/Si3N4/SiO2(ONO) is used to scale down the memory device. In this paper, the change of composition in ONO layer due to the process condition and the conduction mechanism are observed. The composition of the oxide film grown through the oxidation of nitride film is analyzed using auger electron spectroscopy(AES). AES results show that oxygen concentration increases at the interface between oxide and nitride layers as the thickness -of the top oxide layer increases. Results of I-V measurement show that the insulating properties improve as the thickness of the top oxide layer increases. But when the thickness of the nitride layer decreases below 63.angs, insulating peoperties of film 28.angs. of top oxide and film 35.angs. turn over showing that insulating property of film 28.angs. of top oxide is better than that of film 35.angs. of top oxide. This phenomenon of turn over is thought as the result of generation of surface state due to oxygen flow into nitride during oxidation process. As the thickness of the top oxide and nitride increases, the electrical breakdown field increases, but when the thickness of top oxide reaches 35.angs, the same phenomenon of turn over occurs. Optimum film thickness for scaled multi-layer dielectric of memory device SONOS is estimated to be 63.angs. of nitride layer and 28.angs. of top oxide layer. In this case, maximum electrical breakdown field and leakage current are 18.5[MV/cm] and $8{\times}{10^-12}$[A], respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.520-524
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• 1999

Light-emitting diode(LEDs), diode arrays, and phosphor display panels are finding increased use in a variety of commercial applications. Present and anticipated application of these devices include solid state indicator and display systems. In this work, Phosphor based on ZnS:Cu are used. Relation by luminance with the thickness of insulating layer and phosphor layer are discussed. Increased thickness of insulating layer are stable on voltage to 300V. By considering thickness and voltage, optimal structure and thickness are investigated. In order to maximize even surface emission, various sieving processes are introduced. 150cd/m$^2$ luminance by various wave intensity are investigated in stable voltage and frequency.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.16-20
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• 2006

In this paper, we investigated the effects of short-term oxygen plasma treatment of semiconducting silicone layer to improve interfacial performances in joints prepared with a insulating silicone materials. Surface characterizations were assessed using contact angle measurement and x-ray photoelectron spectroscopy (XPS), and then adhesion level and electrical performance were evaluated through T-peel tests and electrical breakdown voltage tests of treated semi-conductive and insulating joints. Plasma exposure mainly increased the polar component of surface energy from $0.21\;dyne/cm^2$ to $47\;dyne/cm^2$ with increasing plasma treatment time and then leveled off. Based on XPS analysis, the surface modification can be mainly ascribed to the creation of chemically active functional groups such as C-O, C=O and COH on semi-conductive silicone surface. This oxidized rubber layer is inorganic silica-like structure of Si bound with three to four oxygen atoms ($SiO_x,\;x=3{\sim}4$). The oxygen plasma treatment produces an increase in joint strength that is maximum for 10 min treatment. However, due to brittle property of this oxidized layer, the highly oxidized layer from too much extended treatment could be act as a weak point, decreasing the adhesion strength. In addition, electrical breakdown level of joints with adequate plasma treatment was increased by about $10\;\%$ with model samples of joints prepared with a semi-conducting/ insulating silicone polymer after applied to interface.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.999-1002
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• 1997

In this study, in order to set ELID conditions in the internal grinding wheel, the characteristics with the variations of grit size, output voltage and peak current were examined by using conventional machining center(M/C) equipped with electrolytic in-process dressing(EL1D). The initial working voltage was lowered and the working current was high with increasing grit size. The insulating layer thickness increased, as the final voltage increased with the output voltage and peak current. The initial wear rate of the wheel machined with ELID were measured indirectly by using surface roughness tracer. The initial wear rate of the wheel with ELID increased along with high grit size. In case that the grit size with ELID was low, the output voltage and peak current had to be increased to increase the insulating layer thickness. In case of the high grit size, the output voltage and the peak current were established low, which made the insulating layer thickness decreased.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.1-7
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• 2006

A major failure mode for wafer level chip size package (WLCSP) is thermo-mechanical fatigue of solder joints. The mechanical strains and stresses generated by the coefficient of thermal expansion (CTE) mismatch between the die and printed circuit board (PCB) are usually the driving force for fatigue crack initiation and propagation to failure. In a WLCSP process peripheral or central bond pads from the die are redistributed into an area away using an insulating polymer layer and a redistribution metal layer, and the insulating polymer layer affects solder joints reliability by absorption of stresses generated by CTE mismatch. In this study, several insulating polymer materials were applied to WLCSP to investigate the effect of insulating material. It was found that the effect of property of insulating material on WLCSP reliability was altered with a solder ball layout of package.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.296-298
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• 1997

The performance of thin film pressure sensors with polyimide and silicon oxide as a insulating layer between the stainless steel diaphragm and the Cu-Ni strain gauges is presented. The polyimide was spun on the stainless steel diaphragm and cured in an oven. The silicon oxide was deposited by rf sputtering. The thin film pressure sensor with silicon oxide as a insulating layer showed a better nonlinearity and a lower hysteresis.

• The Journal of Engineering Research
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• v.6 no.2
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• pp.33-38
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• 2004

To investigate the reliability of the MTJs on the roughness of insulating tunnel barrier, we prepared two MTJs with the different uniformity of barrier thickness. Namely, the one has uniform insulating barrier thickness; the other has non-uniform insulating barrier thickness as compared to different thing. As to depositing amorphous layer CoZrNb under the pinning layer IrMn, we achieved MTJ with uniform barrier thickness. Toinvestigate the reliability of the MTJs dependent on the bottom electrode, time-dependent dielectric breakdown (TDDB) measurements were carried out under constant voltage stress. The Weibull fit of out data shows clearly that $t_{BD}$ scales with the thickness uniformity of MTJs tunnel barrier. Assuming a linear dependence of log($t_{BD}$) on stress voltages, we obtained the lifetime of $10^4$years at a operating voltage of 0.4 V at MTJs comprising CoNbZr layers. This study shows that the reliabilityof new MTJs structure was improved due to the ultra smooth barrier, because the surface roughness of the bottom electrode influenced the uniformity of tunnel barrier.