• 제목/요약/키워드: Insulating Material

검색결과 711건 처리시간 0.022초

메틸렌기의 길이에 따른 지방산계 LB막의 유전 및 전기적 특성 (Dielectric and Electrical Characteristics of Fatty Acid System LB Filmes According to Length of Methylene Group)

  • 김도균;강기호;최용성;권영수
    • 한국전기전자재료학회논문지
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    • 제13권4호
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    • pp.300-305
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    • 2000
  • We have investigated the dielectric and electrical characteristics of palmitic acid(PA) stearic acid(SA) and arachidic acid(AA) Langmuir-Blodgett(LB) films because these fatty acid systems have a same hydrophilic group and a different hydrophobic one(methylene group or alkyl chain length). The fatty acid systems were used as LB films and the status of the deposited films was confirmed by evaluating the transfer ratio the UV absorption and the capacitance. The dielectric characteristics such as the frequency-capacitance characteristics and the dielectric dispersion and absorption characteristics of PA SA and AA through-plane were measured. The relative dielectric constants of PA, SA and AA LB films were about 3.0~4.6, 2.7~3.0 and 2.4~3.0 respectively. That is the relative dielectric constants were decreased in proportion to the chain length of methylene group. Also the dielectric dispersion and absorption of each fatty acid LB films have arisen from spontaneous polarization of dipole polarization in the range of 10$^4$~10$^{5}$ [Hz]. The conductivity of PA, SA and AA LB films obtained from I-V characteristics were about 9$\times$10$^{-14}$ , 3$\times$10$^{-14}$ and 5$\times$10$^{-15}$ [S/cm]. respectively. These results have shown the insulating materials and could control the conductivity y changing the length of methylene group. Also we have confirmed that the barrier height of fatty acid systems were almost the same ones obtained from dielectric characteristics.

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LSR 계면의 접착특성 및 절연파괴거동 (Adhesion properties and Breakdown behaviors of LSR Interface)

  • 윤승훈;남진호;이건주;최수걸;신두성;지응서
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.232-235
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    • 2002
  • Recently developed liquid silicone rubber (LSR) can be cured by platinum catalyzed additional hydrosilylation mechanism and has the advantage of no byproduct compared to traditional millable peroxide curing silicone rubber. We investigated the characteristics of dielectric breakdown of silicone rubber and adhesion properties between semi-conductive LSR and insulating LSR for high voltage application of pre-molded joint (PMJ). In order to understand the dielectric breakdown characteristics, we used the sheet samples and the paired type rogowski insert electrode system. The breakdown strength and adhesion strength of LSR (E-3) were superior to those of several silicone rubbers. Adhesion strength could be improved by curing at high temperature without post-curing process or enhanced by post-curing process. When LSR (E-3) was cured at $(150^{\circ}C{\times}10min$ semi-conductive )${\times}$ ($175^{\circ}C{\times}10min$ insulation), it showed the high breakdown strength with low standard deviation, and good adhesion strength. In this results, we could apply this process to the fabrication of PMJ without post-curing.

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Y2O3가 1 wt% 첨가된 AlN 세라믹의 전기절연성에 미치는 TiO2 첨가의 효과 (The Effects of TiO2 Addition on the Electrical Insulation of AlN Ceramics with 1 wt% Y2O3)

  • 이진욱;이원진;이성민
    • 한국전기전자재료학회논문지
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    • 제29권12호
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    • pp.791-795
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    • 2016
  • The effects of $TiO_2$ addition on the electrical insulation of AlN ceramics with 1 wt% $Y_2O_3$ as a sintering aid have been investigated. Some of $TiO_2$ has reacted with AlN powders and transformed to fine TiN particles during sintering, which was uniformly dispersed along grain boundaries of AlN. At a high electrical field (500 V/mm), the resistivity of AlN ceramics with $TiO_2$ addition of 0.2 wt% increased about 1000 times from $3{\times}10^{10}{\Omega}cm$ to $3.1{\times}10^{13}{\Omega}cm$. Based on the impedance spectroscopy measurement, it was found that $TiO_2$ addition increased dramatically electrical resistivity of AlN grains much more than that of grain boundaries. Thus, $TiO_2$ was believed to dissolve inside AlN grains to suppress ionic conduction of Al vacancies. This suppressed ionic conduction by Ti incorporation into AlN grains seems to contribute to more electrically insulating AlN ceramics.

시뮬레이션을 통한 스파크갭의 SF6, N2 압력 특성 분석 (Analysis of SF6, N2 Pressure Characteristic of Spark Gap According to Simulation)

  • 최순호;이태우;방정주;허창수
    • 한국전기전자재료학회논문지
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    • 제27권3호
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    • pp.172-177
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    • 2014
  • Industrial, medical, environment and agriculture application of pulse power technology have been developing rapidly in many field. In order to make use in the form of pulses is applied to the pulse forming technique. At this time, spark gap is generally used for the pulse forming. Spark gap may be possible to simulate the shape of the electrode, to know the uniform or non-uniform electric field of the electrode structure. Further, it can be determined using Paschen's law applied pressure of the insulating gas in accordance with the voltage which is created using the value of the electric field. In this paper, we tried to found using a formula and the simulation process to determine the pressure. The value of the electric field is different according to the shape of the electrode. So, the range of pressure applied also varies. In order to withstand the 100 kV with a gap of 5 mm, the nitrogen gas must be applied to about 7 bar in the electrode structure. On the other hand, in the same conditions, Sulfur hexafluoride gas must be applied to about 2 bar. Consequently, the Sulfur hexafluoride gas has a higher insulation properties than nitrogen gas may be applied to low pressure at the same conditions.

친환경 건축물 단열재 최근 연구 동향 (Recent Research Trends for Green Building Thermal Insulation Materials)

  • 박종문;김동환;서동진
    • 청정기술
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    • 제18권1호
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    • pp.14-21
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    • 2012
  • 친환경 건축물에 사용되는 미네랄울, 폴리우레탄 등 전통적인 단열재로부터 최근에 주목받고 있는 VIP (Vacuum Insulation Panel), 에어로젤, 그리고 미래기술로 연구되고 있는 VIM (Vacuum Insulation Material), DIM (Dynamic Insulation Material) 등 단열재 및 단열 시스템의 특성과 장단점을 비교하였다. 매우 낮은 열전도율을 지닌 VIP 및 에어로젤은 기존 단열재에 비해 에너지 소모를 줄일 수 있으므로 주거면적을 크게 확대할 수 있는 장점이 있으며, 특히 에어로젤은 반투명 및 투명재질로 만들 수 있어 건물에 응용될 수 있는 가능성이 매우 크다. 단열재는 낮은 열전도율뿐만 아니라, 건설현장 응용성, 기계적강도, 내화성, 비용 및 환경영향 등을 고려하여야 하므로, 전통적인 단열재 및 최신 단열재를 활용하고 지속적으로 개선시키는 노력을 해야 할 것이다.

무기질 충진재와 폴리우레탄을 활용한 유·무기 복합 단열소재의 발포조건에 따른 특성 평가 (Evaluation of an Organic-Inorganic Hybrid Insulation Material using an Inorganic Filler and Polyurethane with a Foaming Condition)

  • 노현경;송훈;추용식;박지선;이종규
    • 한국세라믹학회지
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    • 제49권6호
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    • pp.654-658
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    • 2012
  • In this work, the properties of an organic-inorganic hybrid insulating material using an inorganic filler and polyurethane foam with different foaming conditions were investigated. At weight ratios of polyol and isocyanate of 1 to 1.2 good foaming properties were noted. In addition, an addition of 0.4 g of water, 0.1 g of surfactant, and 0.1 g of catalyst with respect to the composites of polyol at 5 g and isocyanate at 6 g showed the lowest apparent density and thermal conductivity. The pore size was smaller in the organic-inorganic hybrid foaming body with an increase in the $CaCO_3$ addition amount. Moreover, the apparent density and thermal conductivity were increased when the added amount of $CaCO_3$ increased. Increasing the amount of $CaCO_3$ powder is expected to improve the flame retardant capabilities; however, doing this tends to increase the apparent density and thermal conductivity.

Hot Wall Epitaxy (HWE)에 의한 CdGa$_2$Se$_4$ 단결정 박막 성장과 광전기적 특성 (Growth and Optoelectric Characterization of CdGa$_2$Se$_4$ Sing1e Crystal Thin Films)

  • 홍광준;박창선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.167-170
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    • 2001
  • The stochiometric mix of evaporating materials for the CdGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 630$^{\circ}C$ and 420$^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CdGa$_2$Se$_4$ single crystal thin films measured from Hall erect by van der Pauw method are 8.27x10$\^$17/ cm$\^$-3/, 345 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on CdGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$\_$X/) existing only high quality crystal and neutral bound exiciton (D$\^$0/,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excision were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV,

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Hot Wall Epitaxy (HWE)에 의한$ZnGa_{2}Se_{4}$단결정 박막 성장과 광전기적 특성 (Growth and Optoelectric Characterization of $ZnGa_{2}Se_{4}$ Sing1e Crystal Thin Films)

  • 박창선;홍광준
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.163-166
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    • 2001
  • The stochiometric mix of evaporating materials for the ZnGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa$_2$Se$_4$ single crystal thin films measured from Hall effect by van der Pauw method are 9.63x10$^{17}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively, From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa$_2$Se$_4$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr were 251.9 MeV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on ZnGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$_{x}$) existing only high quality crystal and neutral bound excition (A$^{0}$ ,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.on energy of impurity was 122 meV.

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Ag Pastes의 분산 특성 및 스크린 인쇄된 OTFTs용 전극 물성 (Dispersion Characteristics of Ag Pastes and Properties of Screen-printed Source-drain Electrodes for OTFTs)

  • 이미영;남수용
    • 한국전기전자재료학회논문지
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    • 제21권9호
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    • pp.835-843
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    • 2008
  • We have fabricated the source-drain electrodes for OTFTs by screen printing method and manufactured Ag pastes as conductive paste. To obtain excellent conductivity and screen-printability of Ag pastes, the dispersion characteristics of Ag pastes prepared from two types of acryl resins with different molecular structures and Ag powder treated with caprylic acid, triethanol amine and dodecane thiol as surfactant respectively were investigated. The Ag pastes containing Ag powder treated with dodecane thiol having thiol as anchor group or AA4123 with carboxyl group(COOH) of hydrophilic group as binder resin exhibited excellent dispersity. But, Ag pastes(CA-41, TA-41, DT-41) prepared from AA4123 fabricated the insulating layer since the strong interaction between surface of Ag powder and carboxyl group(COOH) of AA4123 interfered with the formation of conduction path among Ag powders. The viscosity behavior of Ag pastes exhibited shear-thinning flow in the high shear rate range and the pastes with bad dispersion characteristic demonstrated higher shear-thinning index than those with good dispersity due to the weak flocculated network structure. The output curve of OTFT device with a channel length of 107 ${\mu}m$ using screen-printed S-D electrodes from DT-30 showed good saturation behavior and no significant contact resistance. And this device exhibited a saturation mobility of $4.0{\times}10^{-3}$ $cm^2/Vs$, on/off current ratio of about $10^5$ and a threshold voltage of about 0.7 V.

Magnetism of Nanocomposite Quartz Powder by use of MCR Method

  • Soh, Deawha;Lim, Byoungjae;Soh, Hyunjun;Mofa, N.N.;Ketegenov, T.A.;Mansurov, Z.A.
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2004년도 SMICS 2004 International Symposium on Maritime and Communication Sciences
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    • pp.113-116
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    • 2004
  • The materials showing high structure dispersion with functional properties were developed on the quartz base and those were obtained by mechano-chemical reaction technology. Depending on the processing conditions and subsequent applications the materials produced by mechano-chemical reaction show concurrently magnetic, dielectric and electrical properties. The obtained magnetic-electrical powders classified by aggregate complex of their features as segnetomagnetics, containing a dielectric material as a carrying nucleus, particularly the quartz on that surface one or more layers of different compounds were synthesized having thickness up to 10~50 nm showing magnetic, electrical properties and others. The similarity of the structure of surface layers of quartz particles subjected to mechano-chemical processing and nano-structure cluspol (clusters in a polymer matrics) material was also confirmed by the fact that the characteristics of ferromagnetic quartz of insulating nano-composite powder were changed with time, after its preparing process was completed. The magnetic permeability of the sample was decreasing within first two months down by 15~20 %. Then, the magnetic characteristics were almost stabilized steadily and continuously. The observed changes were related with defective structure of the particles, elastic stress relief, and changes of electron density and magnetic moment in deformation zones. This process of stabilization of the investigated properties could be intensified by the thermal annealing heat treatment in short time period of the nano-composite quartz powders at the temperature ranges of 100~15$0^{\circ}C$.

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