• Title/Summary/Keyword: Inorganic film

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Recent Trends in the Development of Organic Thin Film Transistor Including SAM Dielectric (SAM 절연체를 이용한 유기박막트랜지스터 개발의 최근 동향)

  • Kim, Sungsoo
    • Journal of Integrative Natural Science
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    • v.2 no.1
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    • pp.13-17
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    • 2009
  • A newly developed OTFT manufacturing process using the combination of self-assembly techniques and vapor phase polymerization method revealed that a thick $SiO_2$ dielectric layer (100~200 nm) is not well compatible with conducting polymer electrode, thereby resulting in still recognizable contact resistance, unstable $V_{th}$ and leaking off current. A couple of very recent studies showed that this issue may be solved by replacing such inorganic dielectric with a self-assembled monolayer or multilayer (organic) dielectric. Therefore, this short review introduces recent trends in the development of high performance thin film transistor consisting of both organic semiconductor and SAM dielectric.

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Ultrasensitive metal-oxide gas sensors obtained using colloidal templates

  • Kim, Il-Doo;Rothschild Avner;Hyodo Takeo;Tuller Harry L..
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.247-247
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    • 2006
  • Chemical and physical synthesis routes were combined to prepare macroporous thin films of semiconducting metal-oxides such as $CaCu_{3}Ti_{4}O_{12}\;and\;TiO_{2}$ by sputtering onto (PMMA) microsphere templated substrates. Subsequently, the colloidal templates were removed by thermal decomposition. The remaining inorganic films comprised a monolayer of hollow hemispheres with diameter commensurate with that of the microspheres. This unique morphology increases the surface area and reduces the interfacial area between film and substrate. Consequently, the surface activity is markedly enhanced while deleterious interfacial effects between film and substrate are significantly reduced. Both effects are highly advantageous for gas sensing applications.

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Synthesis of an Ordered Porous SiCN Ceramic Film by Self-Assembly of Inorganic-Organic Diblock Copolymer

  • Nghiem Quoc Dat;Kim Dong-Pyo
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.296-296
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    • 2006
  • Highly temperature stable mesoporous materials have excellent properties and potential applications. Here we show a novel poly(vinyl)silazane-block-polystyrene diblock copolymer, which was synthesized by controlled/living free radical polymerization with reversible addition fragmentation chain transfer (RAFT) route. The obtained diblock copolymer occurs the phaseseparation on the nanoscale to form ordered nanostructure, which is converted to mesoprorous ceramic after heating at 800oC. This route demonstrates the preparation of highly temperature stable mesoporous silicon carbon nitrides (SiCN) ceramic film directed from highly cross-linking poly(vinyl)silazane blocks with high ceramic yield, which is different from previous pathway.

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Effect of Side Chain Structure of Gate Insulator on Characteristics of Organic Thin Film Transistor

  • Yi, Mi-Hye;Ha, Sun-Young;Pyo, Seung-Moon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.487-490
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    • 2006
  • We propose a new method to achieve well-defined surface properties of the polymeric gate dielectrics without using SAM technique and inserting another organic/inorganic buffer layer. Pentacene thin film transistors(OTFTs) fabricated with the polyimide gate insulators with different side chain structures were demonstrated. Further, a relationship between the surface properties (surface morphology, surface energy, etc) of the films and the performance of OTFTs have investigated, which will be given in more detail in presentation.

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New Plastic Substrate for Flexible Display

  • Hwang, Hee-Nam;Lee, Ki-Ho;Kim, Sung-Tae;Kim, In-Sun;Shim, Jun-O;Kwak, Soon-Jong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.988-990
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    • 2003
  • A plastic substrate for flexible display is developed. The developed PES film has good resistance to heat, low intrinsic birefringence, and mechanical stability. The gas barrier property in the substrate is improved through depositing organic and inorganic multi layer on plastic film by PVD and CVD process.

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Electrical Imaging of Thin Film Surface by Scanning Maxwell-stress Microscopy (주사형 맥스웰응력 현미경에 의한 표면의 전기적 이미지)

  • Shin, Hoon-Kyu;Kwon, Young-Soo
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1508-1510
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    • 1998
  • Recent development of scanning probe microscope techniques has made it possible to investigate, not only microscopic surface topography, but also physical and chemical properties on the nanometer-scale. The scanning Maxwell-stress microscopy (SMM) is surface characterization tool capable of mapping both the surface topography and electrical properties, such as surface potential, surface charge dielectric constant of thin films with a nanometer-scale resolution by means of the AC voltage driven oscillation of metal coated cantilever. In this study, we observed the surface potential distribution and molecular ordering in thin films. We have demonstrated that the SMM can be used for imaging surface potential distribution over the film surface and also be used for detecting surface changes in thin films. This is first step towards the understanding of electrical phenomena in organic and inorganic materials, biological system with SMM.

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Properites of Inorganic Hybrid Silica Materials according to the XRD patterns (XRD 패턴에 따른 유무기복합 화합물의 특성)

  • 오데레사;고유신;김경식
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.995-998
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    • 2003
  • This paper reports the correlation between dielectric constant and degree of amorphism of the hybrid type Si-O-C thin films. Si-O-C thin films were deposited by high density plasma chemical vapor deposition using bistrimethyl- silylmethane(BTMSM, $H_{9}$C$_3$-Si-C $H_2$-Si-C$_3$ $H_{9}$) and oxygen precursors with various flow rate ratio. As-deposited film and annealed films at 40$0^{\circ}C$ were analyzed by XRD. The Si-O-C thin films were amorphous from XRD patterns. For quantitative analysis, the diffraction pattern of the samples was transformed to radial distribution function by Fourier analysis, and then compared with each other. The degree of amorphism of annealed films was higher than that of as-deposited ones. The dielectric constant varied in accordance with flow rate ratio of precursors. The lowest dielectric constant was obtained from the as-deposited film which has the highest degree of amorphism after annealing.

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Highly Laminated Electrospun ZnO Nanofibrous Film on the Transparent Conducting Oxide for Photovoltaic Device

  • Kim, Jinsoo;Yoon, Sanghoon;Yoo, Jung-Keun;Kim, Jongsoon;Kim, Haegyeom;Kang, Kisuk
    • Journal of Electrochemical Science and Technology
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    • v.3 no.2
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    • pp.68-71
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    • 2012
  • The electrospinning technique is a revolutionary template-catalyst-free method that can generate 1D nanostructure with the tunability and the potential for the mass production. This approach received a great deal of attention due to its ability to give direct pathways for electrical current and has been utilized in various electronic applications. However, the delamination of inorganic electrospun film has prevented the intense utilization due to the thermal expansion/contraction during the calcination. In this study, we propose an electrical grounding method for transparent conducting oxide and electrospun nanowires to enhance the adhesion after the calcination. Then, we examined the potential of the technique on ZnO based dye-sensitized solar cells.

Fabrication of Infrared Filters for Three-Dimensional CMOS Image Sensor Applications

  • Lee, Myung Bok
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.6
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    • pp.341-344
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    • 2017
  • Infrared (IR) filters were developed to implement integrated three-dimensional (3D) image sensors that are capable of obtaining both color image and depth information at the same time. The combination of light filters applicable to the 3D image sensor is composed of a modified IR cut filter mounted on the objective lens module and on-chip filters such as IR pass filters and color filters. The IR cut filters were fabricated by inorganic $SiO_2/TiO_2$ multilayered thin-film deposition using RF magnetron sputtering. On-chip IR pass filters were synthetized by dissolving various pigments and dyes in organic solvents and by subsequent patterning with photolithography. The fabrication process of the filters is fairly compatible with the complementary metal oxide semiconductor (CMOS) process. Thus, the IR cut filter and IR pass filter combined with conventional color filters are considered successfully applicable to 3D image sensors.

Thermally Induced Mesophase Development in Ethanesilica Films via Macromolecular Templating Approach

  • Cho, Whirang;Char, Kook-Heon;Kwon, Su-Yong
    • Macromolecular Research
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    • v.17 no.9
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    • pp.697-702
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    • 2009
  • Mesoporous ethanesilica thin film was prepared using PEO-PLGA-PEO triblock copolymers as structure-directing agents and (1,2-bis(triethoxysilyl) ethane BTESE; bridged organosilicates) as inorganic precursors via one-step sol-gel condensation of ethanesilica precursors. The mesostructure of ethanesilica films is critically dependent on the processing experimental parameters after the hydrolyzed silica sol mixture was spin-cast. This study examined the effects of the block copolymer template/organosilica precursor ratio in the casting solution and aging period before calcination of the mesostructure. It was further demonstrated that mesoscopic ordering of organosilicate thin films is induced by the rearrangement of block copolymer template/organosilica hybrid during thermal decomposition of the PEO-PLGA-PEO triblock copolymer. The mesoporous structure and morphology were characterized by SAXS, TEM and solid-state NMR measurement.