• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.271-272
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• 2007

Displacement current $(I_{dis})$ and drain-to-source current $(I_{DS})$ are evaluated using the simultaneous measurements of source $(I_S)$ and drain $(I_D)$ currents during the application of a constant drain voltage and a triangular-wave gate voltage $(V_{GS})$ to top-contact pentacene thin-film transistors.

• 전자공학회논문지A
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• 제30A권12호
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• pp.77-87
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• 1993

PMOSFETs were studied on the effect of Hot-Carrier induced drain leakage current (Gate-Induced-Drain-Leakage). The result turned out that change in Vgl(drain voltage where 1pA/$\mu$m of drain leadage current flows) was largest in the Channel-Hot-Hole(CHH) injection condition and next was in dynamic stress and was smallest in electron trapping (Igmax) condition under various stress conditions. It was analyzed that if electron trapping occurrs in the overlap region of gate and drain(G/D), it reduces GIDL current due to increment of flat-band voltage(Vfb) and if CHH is injected, interface states(Nit) were generated and it increases GIDL current due to band-to-defect-tunneling(BTDT). Especially, under dynamic stress it was confirmed that increase in GIDL current will be high when electron injection was small and CHH injection was large. Therefore as applying to real circuit, low drain voltage GIDL(BTDT) was enhaced as large as CHH Region under various operating voltage, and it will affect the reliablity of the circuit.

• 한국전기전자재료학회논문지
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• 제33권3호
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• pp.169-172
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• 2020

In this paper, the effect of hot carrier injection on an n-bulk fin field-effect transistor (FinFET) is analyzed. The hot carrier injection method is applied to determine the performance change after injection in two ways, channel hot electron (CHE) and drain avalanche hot carrier (DAHC), which have the greatest effect at room temperature. The optimum condition for CHE injection is V_G=V_D, and the optimal condition for DAHC injection can be indirectly confirmed by measuring the peak value of the substrate current. Deterioration by DAHC injection affects not only hot electrons formed by impact ionization, but also hot holes, which has a greater impact on reliability than CHE. Further, we test the amount of drain voltage that can be withstood, and extracted the lifetime of the device. Under CHE injection conditions, the drain voltage was able to maintain a lifetime of more than 10 years at a maximum of 1.25 V, while DAHC was able to achieve a lifetime exceeding 10 years at a 1.05-V drain voltage, which is 0.2 V lower than that of CHE injection conditions.

• 한국지반공학회논문집
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• 제33권11호
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• pp.45-57
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• 2017

연약지반의 압밀거동은 온도변화에 의하여 영향을 받는다. 연약 점토지반 내에 온도가 증가하면 간극수압이 증가하고 간극수압의 소산은 부피와 간극비를 감소시킨다. 또한 높은 온도는 간극유체의 점성을 감소시키므로 압밀속도가 빨라진다. 본 연구에서는 온도가 압밀침하량, 압밀시간, 간극수압과 같은 압밀거동에 미치는 영향을 분석하였으며, 이를 위하여 수리역학적(HM) 및 열수리역학적(THM) 거동에 대한 수치해석을 수행하였다. 열주입과 샌드드레인을 동시에 고려하였으며, 온도 변화 및 샌드드레인 직경 변화를 고려하여 해석을 수행하였다. 해석결과, 시료내부의 온도는 열원의 온도와 샌드드레인의 직경 증가에 따라 증가하는 것으로 나타났다. 또한 열주입은 과잉간극수압을 증가시키고 그에 따라 과압밀 영역에서는 추가적인 침하량을 유발하고 정규압밀 영역에서는 압밀시간을 감소시키는 것으로 나타났다.

• 전자공학회논문지A
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• 제30A권2호
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• pp.36-45
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• 1993

The n-channel MOSFETs with gate-$n^{-}$S/D overlapped structure have been fabricated by ITLDD(inverse-T gate lightly doped drain) technology. The gate length(L$_{mask}$) was 0.8$\mu$m. The degradation effects of hot carriers injected into the gate oxide were analyzed in terms of threshold voltage, transconductance and drain current variations. The degradation dependences on the gate voltage and drain voltage were characterized. The devices with higher n-concentration showed higher resistivity against the hot carrier injection. As the results of investigating the lifetime of the device, the lifetime showed longer than 10 years at V$_{d}$ = 5V for the overlapped devices with the implantation of an phosphorus dose of 5$\times$10$^{13}$ cm$^{-2}$ and an energy of 80 keV in the n$^{-}$resion.

• 한국지반공학회논문집
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• 제17권6호
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• pp.53-67
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• 2001

본 연구에서는 침하가 발생한 연약지반에 대하여 저유동성 몰탈에 의한 주입공법인 CGS공법의 적용성과 침하억제 효과를 확인하기 위하여 시험시공을 실시하고 그 결과를 분석하였다. 시험시공 현장은 파일에 의하여 지지된 기 시공 된 아파트의 주변지반으로서 사전에 sand drain공법으로 지반에 대한 처리를 실시하였으나 이후에도 지속적인 침하가 발생하고 있는 연약지반이다. CGS주입 전. 후의 지반개량특성을 파악하기 위하여 현장 및 실내토질시험과, 주입시공 중 거동특성을 파악하기 위하여 계측관리와 FDM해석을 실시하였다. 분석결과 연약지반의 지반침하 방지를 주목적으로 하는 CGS공법은 지반조건에 적합한 설치직경, 간격, 심도, 주입재, 주입압 등 다양한 조건으로부터 시공관리가 가능하며, 따라서 설치된 CGS구체는 파일의 지지효과와 더불어 주변지반을 압축강화시켜 복합적으로 지반을 개량시키므로 N치가 평균 2.1 증가하는 등 지반의 지지력 증대 및 침하억제에 효과가 있었다. 또한 적용성 있는 다양한 현장에 일반적으로 사용하게 될 경우 개량효과와 더불어 경제성이 확보될 수 있을 것으로 기대된다.

• Design & Manufacturing
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• 제11권2호
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• pp.1-8
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• 2017

In this study, we applied microcellular foaming injection molding process to improve the performance of system air-conditioner drain fan which had been produced by injection molding process and studied the optimization of process conditions through 6-sigma process and response surface method (RSM) to reduce weight and deformation of products. Additive type, melt temperature, mold temperature, and injection screw shape were selected as the factor affecting the weight and deformation of the products by carrying out analysis of trivial many through ANOVA and design of experiment (DOE) method. Among the effect factor, we set the addictive type to Long G/F and screw shape to foaming screw which had the highest level of weight reduction and deformation reduction. The amount of foaming agent gas was set at 60 ml, which was the limit beyond which the weight of product did not decrease any more. For melt temperature and mold temperature, we studied the conditions where both weight and deformation were minimized using the RSM. As a result, we set the melt temperature to $250^{\circ}C$, fixed mold temperature to $20^{\circ}C$, and moving mold temperature to $40^{\circ}C$. The improvement effect was analyzed by appling the selected optimal conditions to the production process using the microcellular foaming injection molding. The results showed that the mean weight of product was measured to be 1,420g which was 19% lower than that measured in the current process. The standard deviations of the weights were found to be similar to those in the current process and it showed a low dispersion. The mean deformation was measured to be 0.9237mm, which represented a 57% reduction compared to the mean deformation in the current process, and the standard deviation decreased from 0.3298mm to 0.1398mm. Moreover, we analyzed the process capability for deformation, and the results showed that the short-term process capability increased from 2.73 to 6.60 which was even higher than targeted level of 6.0.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.270-271
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• 2008

The contact resistance between organic semiconductor and source-drain electrode in Bottom Contact Organic Thin-Film Transistors (BCOTFTs) can be effectively reduced by metal oxide/molybdenum double layer structure; metal oxide layers including nickel oxide (NiOx/Mo) and moly oxide(MoOx) under molybdenum work as a high performance carrier injection layer. Step profiles of source-drain electrode can be easily achieved by simultaneous etching of the double layers using the difference etching rate between metal oxides and metal layers.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 하계학술발표회
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• pp.162-163
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• 2000

We have observed the short-channel effect, narrow-channel effect and small-geometry effect in terms of a variation of the threshold voltage. For a short-channel effect the threshold voltage was largely determined by the DIBL effect which stimulates more carrier injection in the channel by reducing the potential barrier between the source and channel. The effect becomes more significant for a shorter-channel device. However, the potential, field and current density distributions in the channel along the transverse direction showed a better uniformity for shorter-channel devices under the same voltage conditions. The uniformity of the current density distribution near the drain on the potential minimum point becomes worse with increasing the drain voltage due to the enhanced DIBL effect. This means that considerations for channel-width effect should be given due to the variation of the channel distributions for short-channel devices. For CCDs which are always operated at a pinch-off state the channel uniformity thus becomes significant since they often use a device structure with a channel length of > 4 ${\mu}{\textrm}{m}$ and a very high drain (or diffusion) voltage. (omitted)

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.450-453
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• 1999

In this paper, The relationship between device performance and channel length(1.5-50$\mu$m) in polysilicon thin-film transistors fabricated by SPC technology was Investigated by measuring electric Properties such as 1-V characteristics, field effect mobility, threshold voltage, subthreshold swing, and trap density in grain boundary with channel length. The drain current at ON-state increases with decreasing channel length due to increase of the drain field, while OFF-state current (leakage current) is independent of channel length. The field effect mobility decrease with channel length due to decreasing carrier life time by the avalanche injection of the carrier at high drain field. The threshold voltage and subthreshold swing decrease with channel length, and then increase in 1.5 $\mu$m increase of increase of trap density in grain boundary by impact ionization.