• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1632-1635
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• 2007

We developed a novel growth method of CNTs on metal substrate for device applications, deposited by a triode direct current plasma enhanced chemical vapor deposition (dc-PECVD). With resist-assisted patterning (RAP) method, we had grown CNTs on metal substrate, which were strongly bonded with metal substrate.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1535-1538
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• 2008

Carbon nanotube arrays were fabricated using micro molding in capillary (MIMIC) process. Patterns remained on the surface in the pattern complementary to that present in the mold. CNTs were selectively grown on the MIMIC patterned sites with a triode PECVD. And turn on field for $10\;{\mu}A/cm^2$ electron emission current was $2.2\;V/{\mu}m$ turn on field.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1425-1428
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• 2006

We have proposed a novel cleaning technology with organic nanoparticles for high-performance TFT array. The surface of the TFT layer becomes more hydrophilic after cleaning by the nanoparticles. This is concluded from the comparison of contact angles for the samples cleaned by various methods. It is found that the drain currents in the subthreshold and off-state regions are less than those for the TFTs cleaned with conventional method.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.795-798
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• 2008

The discharge characteristics of a flat plasma backlight with long electrode gap are investigated. The effect of operating voltage and repetition rate on brightness and luminance efficiency is investigated. A new high efficacy mode is found at low frequencies around 15-40 KHz; a lumen efficacy of 15.3 lm/W is achieved at a luminance of $2400\;cd/m^2$. In the high brightness mode, present at high voltage, we find a maximum luminance of $5900\;cd/m^2$ at 30KHz.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.203-203
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• 2008

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1625-1628
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• 2007

Dispersion of arc-discharged single-walled carbon nanotubes (SWNTs) has been accomplished by a water soluble polymer wrapping functionalization at room temperature. The treated SWNTs were redispersed in both aqueous and many organic solvents and the solutions were found to be stable.

• Journal of Information Display
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• v.7 no.3
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• pp.19-22
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• 2006

White polymeric light-emitting devices (WPLEDs) have been fabricated from polyfluorene-based (PFO) blue and MEH-PPV polymer blending systems. A device structure of ITO / PEDOT:PSS / Blending polymer / Blue polymer / LiF / Al was employed. This structure of double emission layers showed significant improvement of white color shift phenomenon. A current efficiency of 4.67 cd/A (3,900 $cd/m^{2}$, 6.4 V) and a brightness value of 17,600 $cd/m^{2}$ at 9.4 V with (0.34, 0.35) CIE coordinates at 5 V and (0.29, 0.29) at 9 V were achieved achieved.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1454-1456
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• 2007

The electrical and the optical properties of blue organic light-emitting devices (OLEDs) with a multiple emitting layer (EML) acting as electron and hole trapping layers were investigated. While the luminance efficiency of the OLEDs with a multiple EML was very stable, regardless of variations in the applied voltage.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.513-516
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• 2008

The luminance efficiency of the red organic light-emitting devices fabricated utilizing a double electron transport layer (ETL) consisting of an Al-doped and an undoped layer was investigated. The Al atoms existing in the ETL acted as hole blocking sites, resulting in an increase in the luminance efficiency.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.994-997
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• 2006

We have fabricated white polymeric light-emitting devices (WPLEDs) from polyfluorene-based (PFO) blue and MEH-PPV polymer blending systems. A device structure of ITO / PEDOT:PSS / Blending polymer / Blue polymer / LiF / Al was employed. This structure of double emission layers results in the significant improvement of white color shift phenomenon. A current efficiency of 4.67 cd/A ($3,900cd/m^2$, 6.4V) and a brightness value of $17,600cd/m^2$ at 9.4 V with (0.34, 0.35) CIE coordinates at 5V and (0.29, 0.29) at 9V were obtained.