• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.959-962
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• 2003

This study is the effect of lithium Lithium Complex as an electron injection layer(EIL) on the performance of organic light emitting devices (OLEDs) and optimized the device efficiency by varying thickness of EIL layer. The device with 2nm GDI 101 layer showed significant enhancement of the device performance and device lifetime. We also compared GDI 109 and GDI 117 with GDI 101 as an electron injection layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1127-1130
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• 2003

The characteristics of silicon nitride films deposited in a planar coil reactor using a simple high-density inductively coupled plasma chemical vapor deposition technique have been investigated. The process gases used during silicon nitride deposition cycle were pure nitrogen and a mixture of silane and helium. It has been pointed out that the strong H-atom released from the growing SiN film and Si-N bond healing are responsible for the improved electrical and passivation properties of SiN.

• Current Applied Physics
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• v.18 no.11
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• pp.1306-1312
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• 2018

The Mn-doped copper nitride ($Cu_3N$) films with Mn concentration of 2.0 at. % have high crystallinity and uniform surface morphology. We found that the as-synthesized Mn-doped $Cu_3N$ films show suitable optical absorption in the visible region and the band gap is ~1.48 eV. A simple photodetector based on Mn doped $Cu_3N$ films was firstly fabricated via magnetron sputtering method. The fabricated device with doping of Mn demonstrated high photocurrent response and fast response shorter than 0.1 s both for rise and decay time superior to the pure $Cu_3N$. Furthermore, the energy levels of Mn-doped Cu3N matched well with ITO and Ag electrode. The excellent photoelectric properties reflect a good balance between sensitivities and response rate. Our investigation reveals the excellent potential of Mn-doped $Cu_3N$ films for application of photodetectors.

• Nano
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• v.13 no.12
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• pp.1850146.1-1850146.9
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• 2018

The rapid development of smart textiles requires the large-scale fabrication of conductive fibers. In this study, we develop a simple, scalable and low-cost capillary-driven self-assembly method to prepare conductive fibers with uniform morphology, high conductivity and good mechanical strength. Fiber-shaped flexible and stretchable conductors are obtained by coating highly conductive and flexible silver nanowires (Ag NWs) on the surfaces of yarn and PDMS fibers through evaporation-induced flow and capillary-driven self-assembly, which is proven by the in situ optical microscopic observation. The density of Ag NWs and linear resistance of the conductive fibers could be regulated by tuning the assembly cycles. A linear resistance of $1.4{\Omega}/cm$ could be achieved for the Ag NWs-coated nylon, which increases only 8% after 200 bending cycle, demonstrating high flexibility and mechanical stability. The flexible and stretchable conductive fibers have great potential for the application in wearable devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1399-1402
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• 2007

We have demonstrated efficient white WOLEDs by using three emissive materials for primary colors (red, green, and blue). The characteristics of WOLEDs showed the maximum luminance of $37600\;cd/m^2$ at 13V, the maximum luminous efficiency of 20.6 cd/A, and the $CIE_{xy}$ coordinates of (x = 0.33, y = 0.33) at 10V.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.958-961
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• 2007

The electrical characteristics of organic thin-filmtransistor (OTFTs) can be improved by inserting adhesion layer on gate dielectrics. Adhesion layer was used as polymeric adhesion layer deposited on inorganic gate insulators such as silicon dioxide $(SiO_2)$ and it was formed by vapor deposition polymerization (VDP) instead of spin-coating process. The OTFTs obtained the on/off ratio $of{\sim}10^4$, threshold voltage of 1.8V, subthreshold slop of 2.9 V/decade and field effect mobility about $0.01\;cm^2/Vs$.

• Applied Science and Convergence Technology
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• v.27 no.5
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• pp.95-99
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• 2018

We discuss the structural and optical characteristics of GaN nanowires (NWs) grown on Si(111) substrates by a plasma-assisted molecular-beam epitaxy. The GaN NWs with high crystal quality were formed by adopting a new growth approach, so called Ga pre-deposition (GaPD) method. In the GaPD, only Ga was supplied without nitrogen flux on a SiN/Si surface, resulting in the formation of Ga droplets. The Ga droplets were used as initial nucleation sites for the growth of GaN NWs. The GaN NWs with the average heights of 60.10 to 214.62 nm obtained by increasing growth time. The hexagonal-shaped top surfaces and facets were observed from the field-emission electron microscope images of GaN NWs, indicating that the NWs have the wurtzite (WZ) crystal structure. Strong peaks of GaN (0002) corresponding to WZ structures were also observed from double crystal x-ray diffraction rocking curves of the NW samples. At room temperature, free-exciton emissions were observed from GaN NWs with narrow linewidth broadenings, indicating to the formation of high-quality NWs.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.318.1-318.1
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.292.1-292.1
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• 2008

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.45.2-45.2
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• 2008