• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.866-869
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• 2001

In this study, (Ba,Sr)TiO$_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP). Etching characteristics of BST thin films including etch rate and selectivity were evaluated as a function of the etching parameters such as gas mixing ratio, rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 $\AA$/min at Ar(90)/CF$_4$(10), 600 W/350 V and 5 mTorr. The selectivity of BST to PR was 0.6, 0.7, respectively. To analyze the composition of surface residue remaining after the etching, samples etched with different CF$_4$/Ar gas mixing ratio were investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). From the results of XPS and SIMS, there are chemical reaction between Ba, Sr, Ti and C, F radicals during the etching and remained on the surface.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.10a
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• pp.59-59
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• 1999

In this study, planer inductively coupled $Cl_2$ based plasmas were used to etch InGaN and the effects of plasma conditions on the InGaN etch properties have been characterized using quadrupole mass spectrometry(QMS) and optical emission spectroscopy(OES). As process conditions used to study the effects of plasma characteristics on the InGaN etch properties, $Cl_2$ was used as the main etch gas and $CHF_3,{\;}CH_4$, and Ar were used as additive gases. Operational pressure was varied from SmTorr to 3OmTorr, inductive power and bias voltage were varied from 400W to 800W and -50V to -250V, respectively while the substrate temperature was fixed at 50 centigrade. For the $Cl_2$ plasmas, selective etching of GaN to InGaN was obtained regardless of plasma conditions. The small addition of $CHF_3$ or Ar to $Cl_2$ and the decrease of pressure generally increased InGaN etch rates. The selective etching of InGaN to GaN could be obtained by the reduction of pressure to l5mTorr in $CI_2/IO%CHF_3{\;}or{\;}CI_2/IO%Ar$ plasma. The enhancement of InGaN etch rates was related to the ion bombardment for $CI_2/Ar$ plasmas and the formation of $CH_x$ radicals for $CI_2/CHF_3(CH_4)$ plasmas.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.959-964
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• 2001

We investigated the etching characteristics of YMnO$_3$ thin films in high-density plasma etching system. In this study, YMnO$_3$ thin films were etched with CF$_4$/Ar gas chemistries in inductively coupled plasma(ICP). Etch rates of YMnO$_3$ increased up to 20% CF$_4$ in CF$_4$/(CF$_4$+Ar), but decreased with furthermore increasing CF$_4$ in CF$_4$/(CF$_4$+Ar). In optical emission spectroscopy (OES) analysis, F radical and Ar* ions in plasma at various gas chemistries decreased with increasing CF$_4$ content. Chemical states of YMnO$_3$ films exposed in plasma were investigated with x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). There is a chemical reaction between metal (Y, Mn) and F and metal-fluorides were removed effectively by Ar ion sputtering. YF$_{x}$, MnF$_{x}$ such as YF, YF$_2$, YF$_3$ and MnF$_3$ were detected using SIMS analysis. The etch slope is about 65$^{\circ}$ and cleasn surface. surface of the etched YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The etch profile was also investigated by scanning electron microscopy (SEM).EM).

• Journal of Soil and Groundwater Environment
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• v.23 no.6
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• pp.73-81
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• 2018

Inductively coupled plasma-mass spectrometry (ICP-MS), one of the most commonly used instruments for metal analysis, was used to determine total uranium in soil. The method was named as "Modified ASTM C1345-96". When comparing with ASTM C1345-96, digestion time (2~3 days) was shorten to 7 hours and the treatment in furnace was eliminated. In analyses of 26 field soil samples, there was a significant difference in the average concentration of total uranium between modified ASTM C1345-96 and ASTM C1345-96 (F : 6.22 > Fc : 4.03, significance level : 0.05, n=26). The average concentration of modified ASTM C1345-96 was 1.8 times larger than that of ASTM C1345-96. In addition, modified ASTM C1345-96 was compared with other acid digestion methods for soil including ISO 11466, Modified ISO 11466, US EPA-3051, US EPA-3051A and US EPA-3052 using a certificated reference material (SRM 2711a, NIST) and field soil samples with different level of organic matter content (1.6%, 5.8%, 10.6%). Modified ASTM C1345-96 showed the best accuracy of 93.01% for SRM 2711a. Also, modified ASTM C1345-96 showed the higher extraction rates than other digestion methods by 11~45%.

• Journal of Environmental Health Sciences
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• v.44 no.5
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• pp.491-501
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• 2018

Objectives: The aims of this study were to compare concentrations and the correspondence of human blood cadmium by using graphite furnace atomic absorption spectrometry (GF-AAS) and inductively coupled plasma-mass spectrometry (ICP-MS), which are representative methods of heavy metal analysis. Methods: We randomly selected 79 people who agreed to participate in the research project. After confirming the linearity of the calibration curves for GF-AAS and ICP-MS, the concentrations of cadmium in a quality control standard material and blood samples were measured, and the correlation and the degree of agreement were compared. Results: The detection limit of ICP-MS (IDL: $0.000{\mu}g/L$, MDL: $0.06{\mu}g/L$) was lower than that of GF-AAS (IDL: $0.085{\mu}g/L$, MDL: $0.327{\mu}g/L$). The coefficient of variation of the quality control standard material showed stable values for both ICP-MS (clinchek-1: 5.35%, clinchek-2: 6.22%) and GF-AAS (clinchek-1: 7.92%, clinchek-2: 5.22%). Recovery was relatively high for both ICP-MS (clinchek-1: 95.1%, clinchek-2: 92.8%) and GF-AAS (clinchek-1: 91.4%, clinchek-2: 98.8%), with more than 90%. The geometric mean, median, and percentile of blood samples were all similar. The agreement of the two instruments compared with the bias of the analytical values found that about 81% of the analytical values were within ${\pm}30%$ of the deviation from the ideal reference line (y=0). As a result of the agreement limit, the value included in the confidence interval was about 94%, which shows high agreement. Conclusion: In this study, we confirmed there was no significant difference in concentrations of a quality control standard material and blood samples. Since ICP-MS showed lower concentrations than GF-AAS at concentrations below the method detection limit of GF-AAS, it is expected that more precise results will be obtained by analyzing blood cadmium with ICP-MS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.12-16
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• 2001

We investigated the etching characteristics of $YMnO_3$ thin films in high-density plasma etching system. In this study. $YMnO_3$ thin films were etched with $CF_{4}/Ar$ gas chemistries in inductively coupled plasma (ICP). Etch rates of $YMnO_3$ were measured according to gas mixing ratios. The maximum etch rate of $YMnO_3$ is 18 nm/min at $CF_{4}/(CF_{4}+Ar)$ of 20%. In optical emission spectroscopy (OES) analysis, F radical and Ar* ions in plasma at various gas chemistries decreased with increasing $CF_4$ content. Chemical states of $YMnO_3$ films exposed in plasma were investigated with x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). There is a chemical reaction between metal (Y, Mn) and F and metal-fluorides were removed effectively by Ar ion sputtering. $YF_x$, $MnF_x$ such as YF, $YF_2$, $YF_3$ and $MnF_3$ Were detected using SIMS analysis. The etch slope is about $65^{\circ}C$ and free of residues.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.275-275
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• 2012

The relative composition of $Cu(InGa)Se_2$ solar cells is one of the most important measurement issues. However, quantitative analysis of multi-component alloy films is difficult by surface analysis methods due to severe matrix effect. In this study, quantitative depth profiling analysis of CIGS films was investigated by secondary ion mass spectrometry (SIMS). The compositions were measured by SIMS using the alloy reference relative sensitivity factors derived from the certified compositions and the total counting numbers of each element. The compositions measured by SIMS were linearly proportional to those by inductively coupled plasma-mass spectrometry (ICP-MS) using isotope dilution method. In this study, the quantification measured by ICP-MS method is compared with the composition calculated by SIMS depth profiles with AR-RSFs obtained from the reference. The SIMS depth profile of CIGS thin films according to the manufacturing condition was converted into compositional depth profile.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.570-575
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• 2002

$SrBi_2Ta_2O_9$ thin films were etched in $Cl_2/CF_4/Ar$ inductively coupled plasma (ICP). The maximum etch rate was 1300 ${\AA}/min$ at 900 W ICP power in Cl$_2$(20%)/$CF_4$(20%)/Ar(60%). As RF source power increased, radicals (F, Cl) and ion ($Ar^+$) increased. The influence of plasma induced damage during etching process was investigated in terms of P-E hysteresis loops, chemical states on the surface, surface morphology and phase of X-ray diffraction. The chemical states on the etched surface were investigated with X-ray spectroscopy and secondary ion mass spectrometry. After annealing $700^{\circ}C$ for 1 h in $O_2$ atmosphere, the decreased P-E hysteresises of the etched SBT thin films in Ar and $Cl_2/CF_4/Ar$ plasma were recovered.

• Mass Spectrometry Letters
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• v.5 no.2
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• pp.57-61
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• 2014

A gravimetric standard addition method combined with internal standard calibration has been successfully developed for the accurate analysis of total arsenic in a laver candidate reference material. A model equation for the gravimetric standard addition approach using an internal standard was derived to determine arsenic content in samples. Handlings of samples, As standard and internal standard were carried out gravimetrically to avoid larger uncertainty and variability involved in the volumetric preparation. Germanium was selected as the internal standard because of its close mass to the arsenic to minimize mass-dependent bias in mass spectrometer. The ion signal ratios of $^{75}As^+$ to $^{72}Ge^+$ (or $^{73}Ge^+$) were measured in high resolution mode ($R{\geq}10,000$) to separate potential isobaric interferences by high resolution ICP/MS. For method validation, the developed method was applied to the analysis of arsenic content in the NMIJ 7402-a codfish certified reference material (CRM) and the result was $37.07mg{\cdot}kg^{-1}{\pm}0.45mg{\cdot}kg^{-1}$ which is in good agreement with the certified value, $36.7mg{\cdot}kg^{-1}{\pm}1.8mg{\cdot}kg^{-1}$. Finally, the certified value of the total arsenic in the candidate laver CRM was determined to be $47.15mg{\cdot}kg^{-1}{\pm}1.32mg{\cdot}kg^{-1}$ (k = 2.8 for 95% confidence level) which is an excellent result for arsenic measurement with only 2.8 % of relative expanded uncertainty.

• Analytical Science and Technology
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• v.21 no.5
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• pp.364-374
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• 2008

Antarctic Environmental Monitoring Handbook' was published by COMNAP/SCAR in 2000. The standardized method described in this handbook is recommended for monitoring of antarctic environment. High pressure bomb technique in this guide was used to decompose soil samples. In compliance with this guide book, high pressure bomb technique was applied to decompose the antarctic soil sampled at the King Sejong Station. An Isotope Dilution-Inductively Coupled Plasma-Mass Spectrometry (ID-ICP-MS) was applied to determine mass concentrations of Pb, Cu and Zn in the soil. The accuracy in this method was verified by the analysis of certified reference materials (CRM) of NIST 2702 (marine sediment). The analytical results agreed with certified value within the range from 99.5~100.8%. Matrix separation was necessitated for the determination of Cu and Zn by Chelex 100 ion exchange resin. As a result, the average mass concentrations of Pb, Cu and Zn which are suspected to be caused by anthropogenic pollution were 332.9 mg/kg, 95.6 mg/kg and 115.3 mg/kg, respectively. Those for the metals sampled in the soils of the remote regions from the station were 28.1 mg/kg, 101.8 mg/kg and 115.6 mg/kg, respectively.