• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.637-640
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• 1991

In this paper deals with linearized control of induction motor by vector control. Output equation induced from d-q axies voltage and current equation of induction moter. The condition of induced equation is that rotor's current of axies has 0 and state current of D axies which was driven by synchronous speed is constant. The fully digital controlled induction motor drive system based on the proposed linearized method and the control circuit of system consists of 16bits micro computer and all the function are implemented with software. When the voltage source inverter control with PI controller is empolyed, in spite of secondary resistance Rr Variation, the Vector control condition is satisfied.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.346-346
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• 2010

A capacitorless one transistor dynamic random access memory (1T-DRAM) on silicon-germanium-on-insulator substrate was investigated. SGOI technology can make high effective mobility because of lattice mismatch between the Si channel and the SiGe buffer layer. To evaluate memory characteristics of 1T-DRAM, the floating body effect is generated by impact ionization (II) and gate induced drain leakage (GIDL) current. Compared with use of impact ionization current, the use of GIDL current leads to low power consumption and larger sense margin.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.5
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• pp.18-22
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• 1989

We calculate the distribution of the induced current on the strip by the TE waves on the infinite conducting strip. The boundary equations represented as the spatial domain function becomevery complicated equations including convolution integral. As we transform it to the spectral domain, we have a very simple equation expressed by some algebraic multiplication of the current density function and Green's function. It is shown that the computation result of the induced current distribution gives the optimum value, when the stop condition of iteration presented in this paper are satisfied.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.11
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• pp.30-36
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• 1997

AlGaAs/GaAs HBTs are developed well enough to be commercialized as an active device in optical transmission system, but there remains the unanswered questions about reliability. In this paper we applied the reverse constant current stress at the high voltage in avalanche region for a long time to find out a new degradation mechanism of junctrion I-V. The unction off-set voltage at which the current vanishes to zero was shifted to the negative direction of applied bias due to the increment of leakage current as the stress time increases. It was identified that the degradation was induced by the hot carriers which were generated at space charge region and trapped at the interface between GaAs base and the passivation nitride enhancing the electric field across the nesa edge.

• Journal of Power System Engineering
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• v.17 no.1
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• pp.71-76
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• 2013

This study is experimentally performed for using the oyster shell as a desiccant in the batch type system. The peltier element(thermoelectric device) is used for absorbing and releasing the adsorption and desorption heat generation. The cooling and heating effects of peltier element exist in this experiment and these effects are generally known phenomena among some references. The increase in electric current induced into peltier element is effectively release the heat generation of adsorption and desorption. Consequently, the non-dimensional adsorption and desorption amount would increase with increase in electric current. However, in the case of adsorption, the increase of induced current into peltier element, the heat of cold side can not release sufficiently. So the heat of hot side of peltier is transferred into the cold side.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.7
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• pp.780-790
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• 1988

We have studied the hot-carrier-induced degradation caused by the high channel electric field due to the decrease of the gate length of MOSFET used in VLSI. Under DC stress, the condition in which maximum substrate current occures gave the worst degradation. Under AC dynamic stress, other conditions, the pulse shape and the falling rate, gave enormous effects on the degradation phenomena, especially at 77K. Threshold voltage, transconductance, channel conductance and gate current were measured and compared under various stress conditions. The threshold voltage was almost completely recovered by hot-injection stress as a reverse-stress. But, the transconductance was rapidly degraded under hot-hole injection and recovered by sequential hot-electron stress. The Si-SiO2 interface state density was analyzed by a charge pumping technique and the charge pumping current showed the same trend as the threshold voltage shift in degradation process.

• Journal of Electrical Engineering and Technology
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• v.6 no.3
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• pp.364-368
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• 2011

The super-speed tube train was introduced to increase the speed of ground transportation. It levitates magnetically and runs in a partial vacuum tube, which significantly reduces air resistance. However, strong magnetic force sufficient to propel the massive train can affect the infrastructure. The induced eddy current produces joule heat, and raises the inside temperature of the girder, which might lead to electrochemical corrosion on the girder, thereby weakening its durability. In this paper, the authors analyzed the magnetic flux and induced eddy current in the reinforced concrete girder by using three-dimensional FEM, particularly by varying the number of reinforcing steels of the upper flange of the girder to the condition of almost the same flexural strength and reinforcing steel amount.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.107-110
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• 2003

We have proposed a model to describe the current-voltage characteristics of fabricated devices using the Biot-Savart's law in order to develop superconducting flux flow transistors, The measured and calculated values, including induced voltage, transresistance and current gain were investigated in relation to the parallel flow of the vortices in a single microbridge. The predictions agreed very well with measured results.

• Journal of the Korean institute of surface engineering
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• v.44 no.1
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• pp.1-6
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• 2011

A NiW functional alloy plating was investigated as variables of metal ion concentration, complexing agent, temperature, pH and applied current density. Even if numerous studies on reaction mechanism of NiW induced codeposition were carried out during couples of decade, it has not been acceptable reaction mechanism. This study was focused on the effect of the plating variables on the alloy composition in the NiW alloy plating. Applied current density could control mainly the alloy composition rather than other plating variables. It has also been confirmed that the functional alloy plating such as layered or gradient plating was possible by controlling applied current density.

• Proceedings of the KSR Conference
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• 2004.10a
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• pp.1407-1412
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• 2004

Impedance calculations of electric railway traction systems is essential to define characteristics and to design it. The self impedance is defined voltage drop rate per unit length, the mutual impedance is represented as a voltage induced to transmission line from transmission line. The self and the mutual impedance are influenced by ground return currents. The earth is considered as a semi-infinitely extended non-ideal conductor. The current of transmission line produces earth current induced magnetically and it flow through a path having minimum impedance. Carson proposed the impedance calculation formula using wave equations and magnetic field equations. Though the formula have an improper equation, that is still used as a standard impedance calculation method. This paper introduced an impedance calculation method that the complex depth of earth return method assumes that the current in conductor returns through an imagined earth depth path located directly under original conductor at a depth of. In this paper, we showed that this proposed method has a closed form and is easier than Carson's.