• Title/Summary/Keyword: Indium-zinc-oxide (IZO)

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Properties of IZTO Thin Film prepared by the Hetero-Target sputtering system (상온에서 증착한 IZTO 박막의 기판 종류에 따른 특성)

  • Kim, Dae-Hyun;Rim, You-Seong;Kim, Sang-Mo;Keum, Min-Jong;Kim, Kyung-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.203-204
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    • 2009
  • The Indium Zinc Tin Oxide (IZTO) thin films for flexible display electrode were deposited on poly carbonate (PC) and polyethersulfone(PES) and glass substrates at room temperature by facing targets sputtering (FTS). Two different kinds of targets were installed on FTS system. One is ITO ($In_2O_3$ 90 wt.%, $SnO_2$ 10 wt.%), the other is IZO ($In_2O_3$ 90 wt.%, ZnO 10 wt.%). As-deposited IZTO thin films were investigated by a UV/VIS spectrometer, an X-ray diffractometer (XRD), an atomic force microscope (AFM) and a Hall Effect measurement system. As a result, we could prepare the IZTO thin films with the resistivity of under $10^{-4}\;[{\Omega}{\cdot}cm]$ and IZTO thin films deposited on glass substrate showed an average transmittance over 80% in visible range (400~800 nm) in all IZTO thin films except in IZTO thin film deposited at $O_2$ gas flow rate of 0.1[sccm].

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