• Journal of Electrical Engineering and Technology
• /
• v.6 no.3
• /
• pp.414-417
• /
• 2011

Indium tin oxide (In:$SnO_2$) nanoparticles were synthesized employing a sol-gel combustion method followed by annealing. The TG, XRD, XPS and SEM results of the precursor powders and calcinated In:$SnO_2$ nanoparticles were investigated. Crystal structures were examined by powder XRD, and those results show shaper intensity peak at $25.6^{\circ}$ ($2{\theta}$) of $SnO_2$ by increased annealing temperature. A particle morphology and size was examined by SEM, and the size of the nanoparticles was found to be in the range of 20~30nm. In:$SnO_2$ films could controlled by nanoparticle material at various annealing temperature. The sol-gel combustion method was offered simple and effective route for the synthesis of In:$SnO_2$ nanoparticles.

• Journal of the Korean Vacuum Society
• /
• v.5 no.1
• /
• pp.54-61
• /
• 1996

Indium-tin oxide (ITO) films were deposited on the glass substrate by the reactive -ionized cluster beam deposition(ICBD) method. In the oxygen atmosphere, indium cluster formed through the nozzle is ionized by the electron bombardment and is accelerated to be deposited on the substrate. And tin is simultaneoulsy evaporated from the boron-nitride crucible. The chracteristics of films were examined by the X-ray photoelectron spectroscopy(XPS), glancing angle X-ray diffractrion(GXRD) and the electrical properties. were measured by 4-point-probe and Hall effect measurement system . From the XPS spectrum , it was found that indium and tin atoms combined with the oxygen to form oxide$(In_2O_3, SnO_2)$. In the case of films with high tin-concentration, the GXRD spectra show that the main $In_2O_3$ peak of (222) plane, but also sub peaks((440) peak etc.) and $SnO_2$ peaks were detected. From that results, itis concluded that the heavily dopped tin component (more than 14 at. %) disturbs to form $In_2O_3$(222) phase. Four-point-probe and Hall effect measurement show that, in the most desirable case, the transmittance of the films is more then 90% in visible range and its resistivity is $$\rho$=3.55 \times10^{-4}\Omega$cm and its mobility is $\mu$=42.8 $\textrm{cm}^2$/Vsec.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.198-198
• /
• 2006

Tin doped $In_2O_3$ sputtering target is widely used to produce a various kinds of flat panel display because of high transmittance in visible region and high electrical conductivity. In2O3 and SnO2 powders were prepared by a homogeneous precipitation method using metal source, respectively, the calcining and sintering behavior of the indium-tin oxide(In2O3-SnO2) composite powders were studied. The tin oxide(SnO2) dispersion condition in ITO sputtering target was improved by increasing calcining temperature. And the tin oxide dispersion was also improved by reducing the tin oxide contents in the ITO target from 30 to 5wt%. SnO2 dispersion and densification of ITO target is very difficult to control due to sublimation of SnO2 at over 1150C.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.185.2-185.2
• /
• 2015

Tin Oxide (SnO2) has been widely investigated as a transparent conducting oxide (TCO) and can be used in optoelectronic devices such as solar cell and flat-panel displays. In addition, it would be applicable to fabricating the wide bandgap semiconductor because of its bandgap of 3.6 eV. There have been concentrated on the improvement of optical properties, such as conductivity and transparency, by doping Indium Oxide and Gallium Oxide. Recently, with development of fabrication techniques, high-qulaity SnO2 epitaxial thin films have been studied and received much attention to produce the electronic devices such as sensor and light-emitting diode. In this study, powder sputtering method was employed to deposit epitaxial thin films on sapphire (0001) substrates. A commercial SnO2 powder was sputtered. The samples were prepared with varying the growth parameters such as gas environment and film thickness. Then, the samples were characterized by using XRD, SEM, AFM, and Raman spectroscopy measurements. The details of physical properties of epitaxial SnO2 thin films will be presented.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.324-324
• /
• 2012

투명전도체(Transparent Conducting Oxides: TCOs)는 일반적으로 면저항이 $103{\Omega}/sq$ 이하로 전기가 잘 통하며, 가시광선영역인 380~780 nm에서의 투과율이 80% 이상이고, 3.2eV 이상의 밴드갭을 가지는 재료로써, 전기전도도와 가시광선영역에서 투과성이 높아 전기적, 광학적 재료로 관심을 받아 다년간 연구대상이 되어오고 있다. 현재 가장 널리 사용되고 있는 투명전도체(Transparent Conducting Oxides: TCOs) 소재로는 Indium Tin Oxide (ITO)가 가장 각광받고 있지만, Indium의 가격상승과 박막의 열처리를 통해 저항이 증가하는 단점을 가지고 있어 이를 대체 할 새로운 소재 개발이 필요한 상황이다. 그러므로 투명전도체 소재 개발에 있어서 가장 중요한 연구과제는 Indium Tin Oxide(ITO)의 단점을 개선시키고 안정된 고농도의 In-Zn-Sn-O(ITZO) 박막을 성장시키는 것이다. 본 연구에서는 RF스퍼터링법에 의하여 Si wafer에 In-Zn-Sn-O(IZTO)를 $350{\AA}$ 만큼 증착시키고, 1시간 동안 $300^{\circ}C$, $350^{\circ}C$, $400^{\circ}C$로 각각 열처리 하였다. 박막의 전자적, 광학적 특성은 XPS(X-ray Photoelectron Spectroscopy), REELS(Reflection Electron Energy Loss Spectroscopy)를 이용하여 연구하였다. XPS측정결과, ITZO박막은 In-O, Sn-O and Zn-O의 결합을 가지고 있고, 박막의 열처리를 통해 $400^{\circ}C$에서 Zn2p의 피크가 가장 크게 나타나는 반면 In3d와 Sn3d는 열처리를 했을 때가 Room Temperature에서 보다 피크가 작아지는 것을 확인하였다. 이는 $400^{\circ}C$에서 Zn가 표면에 편석됨을 나타낸다. 그리고 REELS를 이용해 Ep=1500 eV에서의 밴드갭을 얻어보면, 밴드갭은 $3.25{\pm}0.05eV$로 온도에 크게 변화하지 않았다. 또한 QUEELS -Simulation에 의한 광학적 특성 분석 결과, 가시광선영역인 380nm~780nm에서의 투과율이 83%이상으로 투명전자소자로의 응용이 가능하다는 것을 보여주었다.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.14 no.4
• /
• pp.935-938
• /
• 2010

Indium-tin-oxide (ITO) films show a low electrical resistance and high transmittance in the visible range of an optical spectrum. The transparent electrodes have to get resistivity and sheet resistance less than $1{\times}10^{-3}{\Omega}/cm$ and $10^3{\Omega}/sq$ respectively and transmittance over 80% at wavelength of 380nm~780nm. This study establishes DC magnetron sputtering process condition on ITO thin film by measuring electrical and optical properties of the thin film. As results, we obtained $300\;{\mu}{\Omega}cm$ resistivity of ITO films with good transmittance (above 90 %) under 90:10 wt% composition rate of $In_2O_3:SnO_2$. Also, we understood that the ITO thin film by DC magnetron sputtering depends on the deposition condition, especially substrate temperature, and the composition rate of $In_2O_3:SnO_2$ that is one of the most critical parameters was successfully optimized for high qualified transparent electrodes.

• Journal of the Korean Applied Science and Technology
• /
• v.31 no.4
• /
• pp.694-702
• /
• 2014

The micron-sized ITO(indium tin oxide) particles were prepared by spray pyrolysis from aqueous precursor solutions for indium, and tin and organic additives solution. Organic additives solution with citric acid(CA) and ethylene glycol(EG) were added to aqueous precursor solution for Indium and Tin. The obtained ITO particles prepared by spray pyrolysis from the aqueous solution without organic additives solution had spherical and filled morphologies whereas the obtained ITO particles with organic additives solution had more hollow and porous morphologies with increasing mole of organic additives. The micron-sized ITO particle with organic additives was changed fully to nano-sized ITO particle whereas the micron-sized ITO particle without organic additives was not changed fully to nano-sized ITO particle after post-treatment at $700^{\circ}C$ for 2 hours and wet-ball milling for 24 hours. The size of primary ITO particle by Debye-Scherrer formula and surface resistance of ITO pellet were measured.

• The Korean Journal of Ceramics
• /
• v.5 no.1
• /
• pp.40-43
• /
• 1999

In order to investigate Sn substitution sites and interstitial O atoms in tin-doped indium oxide, molecular dynamics (MD) simulations were carried out. There are two kinds of cation sites in $In_2O_3$, namely b-site and d-site. NTP-MD simulations under the condition of 300 K and 0 GPa were performed with two kinds of cells substituted by Sn atoms at each site. The excess oxygen atom accompanied with Sn doping was also taken into consideration. According to the calculations of Sn potential energies in each site, it was revealed that Sn atoms were substituted for b-sites rather than for d-sites. It was also revealed that the interstitial excess oxygen atoms tend to be connected with the Sn atoms substituted for the d-sites Sn rather than for the b-site. There MD simulation results well agreed with the experimental results.

• Journal of Sensor Science and Technology
• /
• v.1 no.2
• /
• pp.165-172
• /
• 1992

To determine the effect of additions of trivalent and pentavalent ions on the electrical conductivity and sensing behaviour, indium and antimony were incorporated in tin oxide by the coprecipitation method. Antimony may be considered to enter the cassiterite structure as pentavalent ions, thermal energy could excite electrons from these ions into the conduction band. Similarly the indium ions would enter the lattice as $In^{3+}$ but could accept electrons from the valence band, thereby becoming monovalent or divalent. These phenomena, however, how the potential barrier existing $SnO_{2}$ by addition of two kinds of ions could influence on the sensing behaviour in comparison with their influence on the resistivity were observed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.307.1-307.1
• /
• 2016

Amorphous zinc tin oxide (ZTO) thin films are being widely studied for a variety electronic applications such as the transparent conducting oxide (TCO) in the field of photoelectric elements and thin film transistors (TFTs). Thin film transistors (TFTs) with transparent amorphous oxide semiconductors (TAOS) represent a major advance in the field of thin film electronics. Examples of TAOS materials include zinc tin oxide (ZTO), indium gallium zinc oxide (IGZO), indium zinc oxide, and indium zinc tin oxide. Among them, ZTO has good optical and electrical properties (high transmittance and larger than 3eV band gap energy). Furthermore ZTO does not contain indium or gallium and is relatively inexpensive and non-toxic. In this study, ZTO thin films were formed by UHV RF magnetron co-sputter deposition on silicon substrates and sapphires. The films were deposited from ZnO and SnO2 target in an RF argon and oxygen plasma. The deposition condition of ZTO thin films were controlled by RF power and post anneal temperature using rapid thermal annealing (RTA). The deposited and annealed films were characterized by X-ray diffraction (XRD), atomic force microscope (AFM), ultraviolet and visible light (UV-VIS) spectrophotometer.