• Journal of the Korean Electrochemical Society
• /
• v.14 no.4
• /
• pp.225-230
• /
• 2011

CIGS solar cells are kind of thin film solar cells, which are studied several years. CdS buffer layer that makes heterojunction between window layer and absorbing layer was one of issue in the CIGS solar cell study. New types of buffer layer consisted of indium sulfide are being studied these days owing to high price and environmental harmful of CdS. In this study, we demonstrated electrochemical synthesis of indium sulfide film as a buffer layer, which is cheaper and faster than other methods. A uniform indium sulfide film was obtained by applying two different alternating potentials. The band gap of the film was optimized by controlling temperature during the electrochemical synthesis. Using x-ray photoelectron spectroscopy and diffraction method we confirmed that ${\beta}$-indium sulfide was formed on ITO electrode surface.

• Korean Journal of Materials Research
• /
• v.21 no.8
• /
• pp.432-438
• /
• 2011

In this study, chemical bath deposited (CBD) indium sulfide buffer layers were investigated as a possible substitution for the cadmium sulfide buffer layer in CIGS thin film solar cells. The performance of the $In_2S_3$/CIGS solar cell dramatically improved when the films were annealed at $300^{\circ}C$ in inert gas after the buffer layer was grown on the CIGS film. The thickness of the indium sulfide buffer layer was 80 nm, but decreased to 60 nm after annealing. From the X-ray photoelectron spectroscopy it was found that the chemical composition of the layer changed to indium oxide and indium sulfide from the as-deposited indium hydroxide and sulfate states. Furthermore, the overall atomic concentration of the oxygen in the buffer layer decreased because deoxidation occurred during annealing. In addition, an In-thin layer was inserted between the indium sulfide buffer and CIGS in order to modify the $In_2S_3$/CIGS interface. The $In_2S_3$/CIGS solar cell with the In interlayer showed improved photovoltaic properties in the $J_{sc}$ and FF values. Furthermore, the $In_2S_3$/CIGS solar cells showed higher quantum efficiency in the short wavelength region. However, the quantum efficiency in the long wavelength region was still poor due to the thick buffer layer.

• Bulletin of the Korean Chemical Society
• /
• v.35 no.11
• /
• pp.3299-3302
• /
• 2014

The In2S3 thin films of tetragonal structure and In2O3 films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ($[(Et)_3NH]^+[In(SCOCH_3)_4]^-$; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide ($SiO_2$) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of $10.1cm^2V^{-1}s^{-1}$ at a curing temperature of $500^{\circ}C$, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.54 no.7
• /
• pp.304-307
• /
• 2005

The $In_2S_3\;and\;In_2S_3:Co^{2+}$ thin films were grown by the spray Pyrolysis method. The thin films crystallized into tetragonal structures. The indirect energy band gap was 2.32ev for $In_2S_3\;and\;1.81eV\;for\;In_2S_3:Co^{2+}$ at 298K. The direct energy band gap was 2.67ev for $In_2S_3:Co^{2+}$ thin films. Impurity optical absorption peaks were observed for the $In_2S_3:Co^{2+}$ thin films. These impurity absorption peaks are assigned, based on the crystal field theory to the electron transitions between the energy levels of the $Co^{2+}$ ion sited in $T_{d}$ symmetry. The electrical conductivity($\sigma$), Hall mobility(${\mu}_H$), and carrier concentration (n) of the $In_2Se_3$ thin film were measured, and their temperature dependence was investigated.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.305.2-305.2
• /
• 2016

Tin monosulfide (SnS) is one promising candidate absorber material which replace the current technology based on cadmium telluride (CdTe) and copper indium gallium sulfide selenide (CIGS) for its suitable optical band gap, high absorption coefficient, earth-abundant, non-toxic and cost-effective. During past years work, thin film solar cells based on SnS films had been improved to 4.36% certified efficiency. In this study, Tin monosul fide was obtained by atomic layer deposition (ALD) using the reaction of Tetrakis (dimethylamino) tin (TDMASn, [(CH3)2N]4Sn) and hydrogen sulfide (H2S) at low temperatures (100 to 200 oC). The direct optical band gap and strong optical absorption of SnS films were observed throughout the Ultraviolet visible spectroscopy (UV VIS), and the properties of SnS films were analyzed by sanning Electron Microscope (SEM) and X-Ray Diffraction (XRD).

• Journal of the Korean Ceramic Society
• /
• v.52 no.3
• /
• pp.221-223
• /
• 2015

In this work, we report on the preparation of the anodically-grown $TiO_2$ nanotube arrays sensitized with $In_2S_3$ nanoparticles by using the SILAR (successive ionic layer adsorption and reaction) process. We evaluate the photo-catalytic properties of the prepared hetero-structures under visible-light illumination. The results reveal that the $TiO_2/In_2S_3$ system has enhanced photo-catalytic characteristics including higher chopping height. Improved performance of the heterojunction is attributed to the narrower band gap of $In_2S_3$ and its favorable position within the conduction band relative to that of $TiO_2$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.589-589
• /
• 2012

Indium sulfide thin films have been grown onto glass substrates using radio frequency magnetron sputtering at room temperature. The as-deposited film were annealed in nitrogen atmosphere at different temperatures of 100, 200, 300, 400 and $500^{\circ}C$ with an 1 h annealing time. The effect of annealing temperature on composition, structure, morphology and optical properties of the as-grown In2S3 films has been studied. The XRD results indicate that the as-deposited films are composed by a mixture of both cubic ${\alpha}$ and ${\beta}$ crystalline phases, with some fraction of tetragonal phase. The thermal annealing on the films produces the conversion of the cubic crystalline phases to the tetragonal ${\beta}$ one and a crystalline reorientation of the latter phase. The surface morphological analysis reveals that the films grown at $300^{\circ}C$ have an average grain size of ~ 58 nm. These films show a S/In ratio of 0.99. The optical band gap is found to be direct and the films grown at $300^{\circ}C$ shows a higher optical transmittance of 80% and an energy band gap of 2.52 eV.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2012.05a
• /
• pp.98.2-98.2
• /
• 2012

Thin film solar cells are growing up in the market due to their high efficiency and low cost. Especially CdTe and $CuInGaSe_2$ based solar cells are leading the other cells, but due to the limited percentage of the elements present in our earth's crust like Tellurium, Indium and Gallium, the price of the solar cells will increase rapidly. Copper Zinc Tin Sulfide (CZTS) and Copper Zinc Tin Selenide (CZTSe) semiconductor (having a kesterite crystal structure) are getting attention for its solar cell application as the absorber layer. CZTS and CZTSe have almost the same crystal structure with more environmentally friendly elements. Various authors have reported growth and characterization of CZTSe films and solar cells with efficiencies about 3.2% to 8.9%. In this study, a novel method to prepare CZTSe has been proposed based on selenization of stacked Copper Selenide ($Cu_2Se$), Tin Selenide ($SnSe_2$) and Zinc Selenide (Zinc Selenide) in six possible stacking combinations. Depositions were carried out through RF magnetron sputtering. Selenization of all the samples was performed in Close Space Sublimation (CSS) in vacuum at different temperatures for three minutes. Characterization of each sample has been performed in Field Emission SEM, XRD, Raman spectroscopy, EDS and Auger. In this study, the properties and results of $Cu_2ZnSnSe_4$ thin films grown by selenization will be presented.

• Tribology and Lubricants
• /
• v.30 no.5
• /
• pp.291-294
• /
• 2014

Multiple additives can help improve the performance of generally used lubricants. These additives include MoS2, cadmium, chloride, indium, sulfide, and phosphide, which are harmful to both humans and the environment. Thus, researchers in this industry have been trying to reduce the use of these additives by finding alternatives. Nanodiamonds are one of these candidates. Nanodiamond particles are very hard, chemically stable, and highly heat-conductive. This research involved uniformly dispersing nanodiamond particles in marine engine oils via a matrix synthesis method at various concentrations (0, 0.1, 0.3, 0.5, and 1.0 wt). Friction and wear tests involved constant loads on ball-on-disk specimens, where the ball was AISI 51200 steel, the disk was AISI 1020 steel, and the sliding speed was 0.217 m/s. The lowest wear occurred at a suitable concentration of nanodiamonds (0.3 wt). However, excessive amounts of nanodiamonds caused them to act as abrasive debris because of their hardness, which increased the wear amount. The friction coefficient decreased as the nanodiamond concentration increased because their octagonal, almost spherical shape caused them to act as rolling contact elements between two surfaces.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.428-428
• /
• 2016

Copper indium sulfide (selenide) (CuIn(S,Se)2,CISSe)는 1.0~1.5 eV의 Direct band gap과 105 cm-1이 넘는 큰 광 흡수 계수를 가지고 있어 박막 태양전지의 흡수층으로써 연구되어 왔다. 최근 대량생산 및 저가 공정에 용이하다는 측면에서 용액 공정 기반 CISSe 태양전지 연구가 크게 주목 받고 있다. 용액공정 기반 중 하이드라진을 사용 한 경우 매우 높은 효율을 기록하였으나, 하이드라진 자체의 유독성과 폭발성 때문에 분위기 제어가 필요하고 여전히 저가화 및 대면적 제작에 한계가 있다. 따라서 알코올 솔젤 기반 CISSe 태양전지 제작 연구가 많이 진행되었으나, 결정립 성장 및 칼코겐 원자를 공급하기 위해 불가피하게 황화/셀렌화 후속 열처리 공정을 요구한다. 후속 열처리 공정은 폭발성의 황화수소/황화셀레늄 기체 분위기 제어와 고가의 장비를 필요로 한다. 본 연구에서는 매우 안정적이며 저가 용매인 물과 아민계 첨가제를 이용하여 Cu, In 전구체와 S, Se 이 포함된 Cu-In-S 잉크와 Se잉크를 제작하였다. 잉크 내에 S, Se을 첨가 함으로써 추가적인 후속공정 없이 비활성 가스 분위기에서 고품질의 CISSe 박막 제작을 가능케 하였다. 또한 Se 잉크 증착 횟수에 따른 결정 구조, 광학적 성질의 차이에 주목하였다. 따라서 수계 잉크를 대기 중에서 스핀코팅으로 박막을 제작한 후, Hot plate에서 건조하여 균일한 박막을 제조하고, 제작된 박막을 tube furnace에서 환원 분위기 및 비활성 가스 분위기에서 열처리 진행하여 $1.3{\mu}m$ 두께의 고품질의 CISSe 흡수층을 제작하였다. 이러한 흡수층에 대해 XRD, SEM, EDS 분석을 진행하여, 결정성, 미세구조, 및 조성을 확인하였으며, 제작된 흡수층 위에 버퍼층/투명전극층을 차례로 증착하여 CISSe 태양전지를 제작하여 셀 성능 및 양자 효율 특성을 파악하였다. 또한 액상 Raman 분석을 통해 결정립 성장 과정 메커니즘을 제시하였다.