• Bulletin of the Korean Chemical Society
• /
• 제26권9호
• /
• pp.1354-1358
• /
• 2005

Nano- and microstructured indium nitride crystals were synthesized by the reaction of indium oxide ($In_2O_3$) powder and its pellet with ammonia in the temperature range 580-700 ${^{\circ}C}$. The degree of nitridation of $In_2O_3$ to InN was very sensitive to the nitridation temperature. The formation of zero- to three-dimensional structured InN crystals demonstrated that $In_2O_3$ is nitridated to InN via two dominant parallel routes (solid ($In_2O_3$)-to-solid (InN) and gas ($In_2O$)-to-solid (InN)). The growth of InN crystals with such various morphologies was explained by the vapor-solid (VS) mechanism where the degree of supersaturation of In vapor determines the growth morphology and the vapor was mainly by the reaction of $In_2O$ with ammonia and partially by sublimation of solid InN. The pellet method was proven to be useful to obtain homogeneous InN nanowires.

• 한국세라믹학회지
• /
• 제45권3호
• /
• pp.161-166
• /
• 2008

The multi-films of a metallic film and a transparent conducting oxide (TCO, indium-tin oxide, ITO) film were formed on the stainless steel 316 and 304 plates by a sputtering method and an E-beam method and then the external metallic region of the stainless steel bipolar plates was converted into the metal nitride films through an annealing process. The multi-film formed on the stainless steel bipolar plates showed the XRD patterns of the typical indium-tin oxide, the metallic phase and the metal substrate and the external nitride film. The XRD pattern of the thin film on the bipolar plates modified showed two metal nitride phases of CrN and $Cr_2N$ compound. Surface microstructural morphology of the multi-film deposited bipolar plates was observed by AFM and FE-SEM. The metal nitride film formed on the stainless steel bipolar plates represented a microstructural morphology of fine columnar grains with 10 nm diameter and 60nm length in FE-SEM images. The electrical resistivity of the stainless steel bipolar plates modified was evaluated.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
• /
• pp.62-65
• /
• 1997

Indium nitride thin films were deposited on Si(100) substrates by reactive sputtering method. The metallic indium target was sputtered by nitrogen gas with rf sputtering equipment. The surface morphology and cross-section of the InN thin films were investigated by scanning electron microscopy. The crystal orientations were investigated by X-ray diffraction and the Hall effect were measured with van der Pauw method. The indium nitride thin film showed high Hall mobility(215$\textrm{cm}^2$/V-sec) at 5mTorr total pressure and rf power 60W.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2008년도 하계학술대회 논문집
• /
• pp.646-648
• /
• 2008

The multi-films of a metallic film and a transparent conducting oxide (TCO, indium-tin oxide, ITO) film were formed on the stainless steel 316 and 304 plates by a sputtering method and an E-beam method and then the external metallic region of the stainless steel bipolar plates was converted into the metal nitride films through an annealing process. The multi-film formed on the stainless steel bipolar plates showed the XRD patterns of the typical indium-tin oxide, the metallic phase and the metal substrate and the external nitride film. The XRD pattern of the thin film on the bipolar plates modified showed two metal nitride phases of CrN and $Cr_2N$ compound. Surface microstructural morphology of the multi-film deposited bipolar plates was observed by AFM and FE-SEM. The electrical resistivity of the stainless steel bipolar plates modified was evaluated.

• 자원리싸이클링
• /
• 제29권1호
• /
• pp.81-88
• /
• 2020

발광다이오드는 많은 양의 갈륨과 인듐을 함유하고 있어, 폐발광다이오드로부터 이들 원소의 회수는 최근 많은 관심을 받은 연구 분야이다. 본 연구에서는 폐발광다이오드에 포함된 질화갈륨으로부터 갈륨과 인듐을 회수하고자 시도하였다. 전체 공정은 물성분석, 알칼리배소, 침출의 세 단계로 구성되었다. 화학성분 분석결과 폐발광다이오드의 경우, 70.32% 갈륨, 5.31% 규소, 2.27% 알루미늄 및 2.07% 인듐이 함유됨을 확인하였다. 두 번째 단계인 알칼리배소 공정은 탄산나트륨과 함께, 900℃하에서 3시간의 반응이 최적 조건인 것으로 확인되었고, 이 공정을 통해 질화갈륨이 질화산화물로 변화되었다. 마지막은 침출 단계로서, 산의 종류 및 농도, 고액비, 반응시간에 따른 변화를 조사하여, 최적조건을 확립하였다. 최적조건은 반응온도 25℃ 및 2.0 M의 염산 환경에서 30 ml/g의 고액비와 반응시간 32분으로 나타났으며, 그 때의 침출 효율은 갈륨 96.88%와 인듐 96.61%로 나타났다.

• 한국진공학회지
• /
• 제5권1호
• /
• pp.54-61
• /
• 1996

Indium-tin oxide (ITO) films were deposited on the glass substrate by the reactive -ionized cluster beam deposition(ICBD) method. In the oxygen atmosphere, indium cluster formed through the nozzle is ionized by the electron bombardment and is accelerated to be deposited on the substrate. And tin is simultaneoulsy evaporated from the boron-nitride crucible. The chracteristics of films were examined by the X-ray photoelectron spectroscopy(XPS), glancing angle X-ray diffractrion(GXRD) and the electrical properties. were measured by 4-point-probe and Hall effect measurement system . From the XPS spectrum , it was found that indium and tin atoms combined with the oxygen to form oxide$(In_2O_3, SnO_2)$. In the case of films with high tin-concentration, the GXRD spectra show that the main $In_2O_3$ peak of (222) plane, but also sub peaks((440) peak etc.) and $SnO_2$ peaks were detected. From that results, itis concluded that the heavily dopped tin component (more than 14 at. %) disturbs to form $In_2O_3$(222) phase. Four-point-probe and Hall effect measurement show that, in the most desirable case, the transmittance of the films is more then 90% in visible range and its resistivity is $$\rho$=3.55 \times10^{-4}\Omega$cm and its mobility is $\mu$=42.8 $\textrm{cm}^2$/Vsec.

• 한국전기전자재료학회논문지
• /
• 제22권10호
• /
• pp.808-813
• /
• 2009

Indium nitride thin films were deposited by the radio-frequency reactive magnetron sputtering method. The indium target was sputtered by the mixture flow ratio of $N_2$ to Ar, 9:1. The effects of growth temperature on the structural, optical, and electrical properties of the films were investigated. With increasing the growth temperature, the crystallinity of the films was improved, and the crystalline size was increased. The energy bandgap for the film grown at $25^{\circ}C$ was 3.63 eV, and the bandgap showed an increasing tendency on the growth temperature. The carrier concentration, Hall mobility and electrical resistivity of the films depended significantly on the growth temperature and the maximum Hall mobility of $32.3\;cm^2$/Vsec was observed for the film grown at $400^{\circ}C$.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.172-172
• /
• 2010

In the area of optoelectronic devices based on GaN and related ternary compounds, the two-dimensional system like as quantum wells (QWs) has been investigated as an effective structure for improving the light-emitting efficiency. Generally, the quantum well active regions in III-nitride light-emitting diodes grown on conventional c-plane sapphire substrates have critical problems given by the quantum confined Stark effect (QCSE) due to the effects of strong piezoelectric and spontaneous polarizations. However, the QWs grown on nonpolar templates are free from the QCSE since the polar-axis lies within the growth plane of the template. Also the unique characteristic of linear polarized light emission from nonpolar QW structures is attracting attentions because it is proper to the application of back-light units of liquid crystal display. In this study, we characterized optical properties of the a-plane InGaN/GaN QW structures by temperature-dependent photoluminescence (TDPL) measurements. From the photoluminescence (PL) spectrum measured at 300 K, green emission centered at 520 nm was observed for the QW region. Since indium incorporation on nonpolar QWs is lower than that on c-plane, this high indium-doping on a-plane InGaN QWs is not common. Therefore, the effect of high indium composition on optical properties in a-plane InGaN QWs will be extensively studied.

• 한국재료학회지
• /
• 제19권8호
• /
• pp.443-446
• /
• 2009

This study develops a highly transparent ohmic contact scheme using indium oxide doped ZnO (IZO) as a current spreading layer for p-GaN in order to increase the optical output power of nitride-based lightemitting diodes (LEDs). IZO based contact layers of IZO, Ni/IZO, and NiO/IZO were prepared by e-beam evaporation, followed by a post-deposition annealing. The transmittances of the IZO based contact layers were in excess of 80% throughout the visible region of the spectrum. Specific contact resistances of $3.4\times10^{-4}$, $1.2\times10^{-4}$, $9.2\times0^{-5}$, and $3.6\times10^{-5}{\Omega}{\cdot}cm^2$ for IZO, Ni/Au, Ni/IZO, and NiO/IZO, respectively were obtained. The forward voltage and the optical output power of GaN LED with a NiO/IZO ohmic contact was 0.15 V lower and was increased by 38.9%, respectively, at a forward current of 20 mA compared to that of a standard GaN LED with an Ni/Au ohmic contact due to its high transparency, low contact resistance, and uniform current spreading.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.695-698
• /
• 2006

The photosensitive poly-siloxane material used as the passivation layers for the conventional back channel etched (BCE) thin film transistors (TFTs) has been investigated. Through the organic material, the TFT array fabrication process can be reduced and higher aperture ratio can be achieved for higher LCD panel performance. The interface between the organic passivation layer and the back channel of the amorphous active region has been improved by the back channel oxygen treatment and the devices exhibits lower leakage current than the conventional silicon nitride passivation layer of BCE TFTs. The leakage currents between Indium-tin-oxide (ITO) pixels and the TFT devices and its mechanism have also been investigated in this paper.