• 한국재료학회지
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• 제4권1호
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• pp.97-106
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• 1994

전형적인 f-f 및 nf-f 공정합금계로 분류되는 Sb-InSb 및 Sn-Bi 합금계를 일방향 응고시켜서 성장속도에 따른 전기비저항값의 변화를 조사함으로써 미세조직의 이방성을 전기비저항의 특성으로 분석하고자 하였다. Sb-InSb 계의 경우 26-34wt.% In, Sn-Bi 계의 경우 53-65wt.% Bi의 조성을 갖는 공정합금을 진공봉합시켜 Bridgman형의수직관상로에서 일방향응고시켰다. 일방향응고 시편을 횡단면 및 종단면으로 절단 채취하여 미세조직을 관찰한 후 전기비저항을 측정하였다. Sb-InSb , Sn-Bi공정복합조직의 경우 모두 성장속도의 증가에 따라 성장방향에 수평한 방향의 비저항값($\rho$┴)은 감소하였으며, Sb InSb 공정복합조직의 경우 특히 성장 속도의 증가에 따르는 미세조직상의 두가지 변화 즉, 상경계면적(phase boundary area)의 증가와 fiber방향성의 감소는 공히 $\rho$ ll 값을 증가시키는 반면 $\rho$┴ 값에는 서로 상반된 영향을 끼쳤다. 또한 성장속도의 증가에 따라 점차 조직의 이방성이 상실되었다. 이와 같이 측정된 전기비저항은 미세조직특성과 잘 일치하는 바 전기비저항 측정은 조직 특성분석의 유효한 도구가 될 수 있다.

• 대한방사선기술학회지:방사선기술과학
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• 제36권1호
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• pp.39-47
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• 2013

본 연구의 목적은 방사선 조사 용적 내 포함되는 소장의 용적 감소를 위해 복부판(Belly board, 벨리보드)과 소장변위도구(Small Bowel Displacement Device, SBDD)를 사용한 직장암 환자에서 방사선 치료 영역 내 포함되는 소장의 용적과 비만도 와의 상관성을 보고, 비만지표의 적용을 통해 SBDD의 사용지표를 삼고자 한다. 실험은 2012년 1월부터 4월까지 수술 전 혹은 수술 후 벨리보드와 SBDD를 사용해 골반부위에 방사선치료를 받은 29명의 직장암 환자를 대상으로 분석하였다. 방사선 치료는 3문 조사로 시행하였으며 1.8 Gy의 분할선량으로 중심점에 45 Gy를 조사한 계획만을 분석하였다. 환자의 키, 몸무게, 체질량지수(body mass index, BMI), 허리 엉덩이 둘레비(waist hip ratio, WHR)를 측정하여 비만도를 조사하였다. 조사되는 선량의 90%이상 들어가는 소장의 용적(high dose volume of small bowel, $HDV_{sb}$)과 33%이상 들어가는 소장의 용적(low dose volume of small bowel, $LDV_{sb}$)을 방광의 총 용적(total volume of bladder, $TV_{bladder}$) 및 비만도에 따라 비교하여 그 상관관계를 통계학적으로 분석하였다. 분석결과 수술여부 및 성별 WHR은 $HDV_{sb}$, $LDV_{sb}$에 크게 미치는 영향이 없었고 $HDV_{sb}$, $LDV_{sb}$와 BMI(p=0.031/0.083), $TV_{bladder}$ (p<0.05)는 통계적으로 유의하였다. BMI가 $HDV_{sb}$와는 유의 하지만 $LDV_{sb}$와는 크게 유의하지 않았다. (p=0.031, p>0.05) BMI는 $HDV_{sb}$와 음의 상관관계(${\beta}$=-0.402)가 있었으며 $TV_{bladder}$는 $HDV_{sb}$, $LDV_{sb}$와 음의 상관관계(${\beta}$=-0.497/-0.522)가 있었다. 특히 BMI 23 미만인 경우(BMI Group2)보다 그 이상인 경우 $HDV_{sb}$에 영향을 미치며 음의 상관성(${\beta}$=-0.525)이 있었다.($LDV_{sb}$, $HDV_{sb}$와 유의확률 각각 p=0.059, p=0.027) BMI가 23 이상인 집단(BMI Group1)에서는 $TV_{bladder}$와 $HDV_{sb}$, $LDV_{sb}$가 통계학적으로 유의하였고(p<0.04) 음의 상관성을 보였다. 비만지표인 BMI가 23 이상인 과체중 및 비만군의 직장암 방사선 치료 시 벨리보드와 SBDD를 동시에 사용하는 경우 조사용적 내 포함되는 소장의 용적을 감소시키는데 더 효과적이었다. 그러므로 벨리보드를 사용하는 직장암의 방사선 치료 시 BMI 23 이상인 한국인 환자에게는 소장변위도구를 동시에 사용 할 것을 권장한다.

• ETRI Journal
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• 제34권6호
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• pp.950-953
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• 2012

Schottky barrier single electron transistors (SB-SETs) and Schottky barrier single hole transistors (SB-SHTs) are fabricated on a 20-nm thin silicon-on-insulator substrate incorporating e-beam lithography and a conventional CMOS process technique. Erbium- and platinum-silicide are used as the source and drain material for the SB-SET and SB-SHT, respectively. The manufactured SB-SET and SB-SHT show typical transistor behavior at room temperature with a high drive current of $550{\mu}A/{\mu}m$ and $-376{\mu}A/{\mu}m$, respectively. At 7 K, these devices show SET and SHT characteristics. For the SB-SHT case, the oscillation period is 0.22 V, and the estimated quantum dot size is 16.8 nm. The transconductance is $0.05{\mu}S$ and $1.2{\mu}S$ for the SB-SET and SB-SHT, respectively. In the SB-SET and SB-SHT, a high transconductance can be easily achieved as the silicided electrode eliminates a parasitic resistance. Moreover, the SB-SET and SB-SHT can be operated as a conventional field-effect transistor (FET) and SET/SHT depending on the bias conditions, which is very promising for SET/FET hybrid applications. This work is the first report on the successful operations of SET/SHT in Schottky barrier devices.

• 한국재료학회지
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• 제18권2호
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• pp.61-64
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• 2008

Electrical optical switching and structural transformation of $Ge_{15}Sb_{85}$, $Sb_{65}Se_{35}$ and N2.0 sccm doped $Sb_{83}Si_{17}$ were studied to investigate the phase change characteristics for PRAM application. Sb-based materials were deposited by a RF magnetron co-sputtering system and the phase change characteristics were analyzed using an X-ray diffractometer (XRD), a static tester and a four-point probe. Doping Ge, Se or Si atoms reinforced the amorphous stability of the Sb-based materials, which affected the switching characteristics. The crystallization temperature of the Sb-based materials increased as the concentration of the Ge, Se or Si increased. The minimum time of $Ge_{15}Sb_{85}$, $Sb_{65}Se_{35}$ and N2.0 sccm doped $Sb_{83}Si_{17}$ for crystallization was 120, 50 and 90 ns at 12 mW, respectively. $Sb_{65}Se_{35}$ was crystallized at $170^{\circ}C$. In addition, the difference in the sheet resistances between amorphous and crystalline states was higher than $10^4{\Omega}/{\gamma}$.

• 대한약학회:학술대회논문집
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• 대한약학회 2002년도 Proceedings of the Convention of the Pharmaceutical Society of Korea Vol.2
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• pp.233.3-234
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• 2002

SB31, an extract of Pulsatilla koreana, has been tried as an antitumor agent by traditional medicine pratitioner in Korea for the past 30 years, SB31 was evaluated for cytotoxic and antitumor activity against a variety of cancer cell lines. The SB31 exhibited 5-6 fold less cytotoxic activity against normal mononuclear cells (ED$\sub$50/. 1.1 mg/$m\ell$) than against cancer cell lines (ED$\sub$50/ 0.14-0.19mg/$m\ell$). (omitted)

• 한국인쇄학회지
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• 제22권2호
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• pp.151-162
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• 2004

MnSb layers were grown on GaAs(100), (111)A and (111)B substrates by hot wall epitaxy under various growth conditions. Growth condition dependence of structural properties of the layers was examined. The growth direction and structural properties of MnSb/GaAs(100) depend on Sb source and substrate temperatures. The smooth MnSb(10.1)/GaAs(100) interface was obtained under the appropriate growth condition. On the other hand, MnSb(00.1) layers were grown on GaAs(111) substrates. The quality of the layers on (111)B was superior to that on GaAs(111)A, but degraded as in increasing Sb source temperature during the growth. The $Mn_2Sb$ domain was generated in the layers grown under conditions of low Sb source temperature and high substrate temperature on GaAs(111) substrates.

• Asian-Australasian Journal of Animal Sciences
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• 제9권6호
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• pp.647-650
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• 1996

Fifteen sheep were used in a trial which compared the feeding value of whole barley gain and cottonseed cake as supplements to a basal diet of leaves of fourwing saltbush (Atriplex canescens). Diet SB contained 700 g (air-dry matter) of saltbush alone, diet SB + BG contained 700 g SB with 400 g whole barley grain and diet SB + CS contained 700 g SB with 400 g cottonseed cake. The digestibility of the dry matter of diets SB (69%) and SB + CS (70%) were lower (p < 0.001) than of diet SB + BG (76%). Sheep offered SB alone daily lost 80g whereas those fed the other diets gained 11 g (SB + CS) or 17 g (SB + BG) per day. Daily water consumption of the sheep offered the three diets was similar (p > 0.05), but their water consumption was higher (p < 0.001) than that of sheep offered daily 700 g wheat straw and 200 g barley grain. The results indicate that, at the levels of feeding used, barley grain and cottonseed cake had similar value as supplements to fourwing saltbush harvested in summer. The addition of the supplement allowed the sheep to gain some live weight. However, the presence of saltbush leaves in the diet resulted in higher water intakes by the sheep.

• Imaging Science in Dentistry
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• 제48권4호
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• pp.277-281
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• 2018

Purpose: This study was performed to investigate the relationship between sleep bruxism(SB) and pulpal calcifications in young women. Materials and Methods: A total of 100 female participants between 20 and 31 years of age who were referred to our radiology clinic for a dental check-up, including 59 SB and 41 non-SB patients, were sampled for the analysis. SB was diagnosed based on the American Academy of Sleep Medicine criteria. All teeth were evaluated on digital panoramic radiographs to detect pulpal calcifications, except third molars, teeth with root canal treatment, and teeth with root resorption. Binary logistic regression analysis was used to determine the risk factors for pulpal calcifications. The Spearman correlation coefficient was applied and the Pearson chi-square test was used for categorical variables. To test intra-examiner reproducibility, Cohen kappa analysis was applied. P values <.05 were considered to indicate statistical significance. Results: A total of 2800 teeth were evaluated (1652 teeth from SB patients and 1148 from non-SB patients), and 61% of patients had at least 1 dental pulpal calcification. No statistically significant relationship was found between SB and pulpal calcifications (P>0.05). In SB patients, the total number of pulpal calcifications was 129, while in non-SB patients, it was 84. Binary logistic analysis showed that SB was not a risk factor for the presence of pulpal calcifications(odds ratio, 1.19; 95% CI, 0.52-2.69, P>.05). Conclusion: No relationship was found between SB and pulpal calcifications.

• 대한금속재료학회지
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• 제48권4호
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• pp.353-356
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• 2010

InSb thin films with a thickness of approximately 300 nm were prepared using single- and double-source vacuum evaporation methods and their structures and properties were investigated in terms of a heat treatment procedure. The double-source InSb films, prepared by the alternate stacking of In and Sb, were polycrystalline in structure and included small amounts of unreacted In and Sb phases. After annealing at elevated temperatures below the melting point of InSb (525$^{\circ}C$), the films changed into the InSb phase and were found to contain small amounts of unreacted In. The formation capability of the InSb compound was slightly lower for multilayer films than for single-layer films. The electrical and galvanomagnetic properties were found to be strongly related to the microstructures of the films. The maximum value of the Hall mobility and the magnetoresistance were determined to be $4.3{\times}10^3cm^2$/Vs and 70%, respectively, for the single-layer films, while these values for the alternately stacked films were respectively $2.9{\times}10^3cm^2$/Vs and 29% for the $[Sb(2.5)/In(2.5)]_{60}$ films, and $3.1{\times}10^3cm^2$/Vs and 10% for the $[Sb(150)/In(150)]_1$ films.

• 전기화학회지
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• 제8권3호
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• pp.135-138
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• 2005

본 연구에서는 구연산 수용액 전해질을 제조하여 전기도금 방식에 의해 III-V족 화합물 반도체 InSb를 전기화학적으로 합성하였다. 본 연구에서 제조된 InSb는 기존문헌에서 보고된 바와 달리 EPMA분석결과 In과 Sb의 조성비가 52:48로 화학양론을 정확하게 만족시키고 있고, XPS분석결과 전해질내의 구연산의 농도가 1.2M, pH가 4일 때 444.1 eV에서 InSb 화합물의 피크를 관찰하였으며 구연산의 농도가 1.2M보다 낮거나 pH가 4보다 낮을 때는 InSb화합물과 금속상태의 In이 혼재되어 있는 것을 확인하였다. 또한 XRD를 통하여 InSb(111)의 우선결정방위를 갖는다는 것을 확인하였고, I-V 특성 곡선 측정을 통해 rnSb가 고유한 반도체 특성을 보임을 확인하였다.