• Title/Summary/Keyword: InP/ZnS

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Control of electrical types in the P-doped ZnO thin film by Ar/$O_2$ gas flow ratio

  • Kim, Young-Yi;Han, Won-Suk;Kong, Bo-Hyun;Cho, Hyung-Koun;Kim, Jun-Ho;Lee, Ho-Seoung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.11-11
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    • 2008
  • ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

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Effects of Synthesis Conditions on Luminescence Characteristics of Glutathione Capped ZnSe Nano particles (글루타티온이 캡핑된 ZnSe 나노 입자 발광 특성에 미치는 합성 조건의 영향)

  • Back, Geum Ji;Song, Ha Yeon;Lee, Min Seo;Hong, Hyun Seon
    • Journal of Powder Materials
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    • v.28 no.1
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    • pp.44-50
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    • 2021
  • Zinc selenide (ZnSe) nanoparticles were synthesized in aqueous solution using glutathione (GSH) as a ligand. The influence of the ligand content, reaction temperature, and hydroxyl ion concentration (pH) on the fabrication of the ZnSe particles was investigated. The optical properties of the synthesized ZnSe particles were characterized using various analytical techniques. The nanoparticles absorbed UV-vis light in the range of 350-400 nm, which is shorter than the absorption wavelength of bulk ZnSe particles (460 nm). The lowest ligand concentration for achieving good light absorption and emission properties was 0.6 mmol. The reaction temperature had an impact on the emission properties; photoluminescence spectroscopic analysis showed that the photo-discharge characteristics were greatly enhanced at high temperatures. These discharge characteristics were also affected by the hydroxyl ion concentration in solution; at pH 13, sound emission characteristics were observed, even at a low temperature of 25℃. The manufactured nanoparticles showed excellent light absorption and emission properties, suggesting the possibility of fabricating ZnSe QDs in aqueous solutions at low temperatures.

Emission Characteristics of Power Type Electroluminescent Device (분산형 전계발광 소자의 발광 특성)

  • 권순석;임기조;박수길;김현후;류부형;김용주
    • Electrical & Electronic Materials
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    • v.10 no.2
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    • pp.150-155
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    • 1997
  • Powder type electroluminescent device(P-ELD) in this study was prepared by printing method. P-ELDs were basically composed of phosphor, insulator and transparent conducting layer. The phosphor powder was prepared by sintering the mixture of ZnS as a host, Cu as an activator, and NaCl as a flux for co-activator and enhancement of growth of the phosphor particles. The phosphor layer was made by printing the paste of the cyanoethylpullan as a binder and the ZnS system phosphor powder. In order to evaluate the luminescence characteristics of ZnS P-ELD, applied voltage - luminance(V-L), frequency-luminance(f-L), and relative luminance spectra(L- .lambda.) characteristics were measured. The experimental results show that luminance increased with increasing the applied voltage and frequency. It can be explained in terms of the potential barrier formed between ZnS and CuS. Two emission peaks in luminance-wavelength spectra measured at applied voltage of 100 $V_{rms}$ were observed at 500nm as a primary peak and 460nm as a secondary peak, respectively.y.

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Acute Toxicity of Heavy Metal (Cd, Cu, Zn) on the Hatching Rates of Fertilized Eggs in the Olive Flounder (Paralichthys olivaceus) (넙치(Paralichthys olivaceus) 수정란 부화율에 대한 중금속(Cd, Cu, Zn)의 급성독성)

  • Hwang, Un-Ki;Ryu, Hyang-Mi;Kim, Seong-Gil;Park, Seung-Yoon;Kang, Han Seung
    • Korean Journal of Environmental Biology
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    • v.30 no.2
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    • pp.136-142
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    • 2012
  • Acute toxicity test of heavy metal (Cd, Cu, Zn) were examined using the hatching rates of fertilized eggs in the oliver flounder, Paralichthys olivaceus. Eggs were exposed to Cd, Cu, Zn (0, 10, 100, 500, 1000, 2500, 5000 ppb) and then normal hatching rates were investigated after 48 h. The normal hatching rates in the control condition (not including Cd, Cu and Zn) were greater than 80%, but suddenly decreased with increasing of heavy metal concentrations. Cd, Cu and Zn reduced the normal hatching rates in concentration-dependent way and a significant reduction occurred at concentration grater than 1000, 100, 100 ppb, respectively. The ranking of heavy metal toxicity was Zn>Cu>Cd, with $EC_{50}$ values of 584, 1015 and 1282 ppb, respectively. The no-observed-effect-concentration (NOEC) and the lowest-observed-effect-concentration (LOEC) showed each 100 and 500 ppb of normal hatching rates in exposed to Cu and Zn. The NOEC and LOEC of normal hatching rates in Cd were 500 ppb and 1000 ppb, respectively. From these results, the normal hatching rates of P. olivaceus have toxic effect at greater than the 100 ppb concentrations in Cu, Zn and the 500 ppb concentrations in Cd in natural ecosystems. These results suggest that biological assay using the normal hatching rates of P. olivaceus are very useful test method for the acute toxicity assessment of a toxic substance as heavy metal in marine ecosystems.

V-I Curves of p-ZnO:Al/n-ZnO:Al Junction Fabricated by RF Magnetron Sputtering

  • Jin, Hu-Jie;Jeong, Yun-Hwan;Park, Choon-Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.6
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    • pp.575-579
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    • 2008
  • Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ of by RF magnetron sputtering. Target was ZnO ceramic mixed with 2 wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-3}$, mobilities from 0.194 to $2.3\;cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4\;{\Omega}cm$. p-type sample has density of $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. XPS spectra show that Ols has O-O and Zn-O structures and Al2p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

Effects of Feeding Different Chelated Copper and Zinc Sources on Growth Performance and Fecal Excretions of Weanling Pigs

  • Lee, S.H.;Choi, S.C.;Chae, B.J.;Acda, S.P.;Han, Y.K.
    • Asian-Australasian Journal of Animal Sciences
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    • v.14 no.11
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    • pp.1616-1620
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    • 2001
  • Two feeding trials were conducted to study the effects of different chelated copper and zinc compounds on the performance and fecal excretions of weanling pigs. In Exp. 1, 150 weanling pigs ($L{\times}Y{\times}D$, $12.30{\pm}2.07kg$) were randomly assigned to five dietary treatments: 170 ppm Cu from $CuSO_4$, 85 ppm Cu from Cu amino-chelate (CAC), 170 ppm Cu from CAC, 85 ppm Cu from Cu-Lysine (CL), and 170 ppm Cu from CL. In Exp. 2, 150 weanling pigs ($L{\times}Y{\times}D$, $12.52{\pm}1.80kg$) were randomly assigned to five dietary treatments: 120 ppm Zn from $ZnSO_4$, 60 ppm Zn from Zn-amino-chelate (ZAC), 120 ppm Zn from ZAC, 60 ppm Zn from Zn-Methionine (ZM), and 120 ppm Zn from ZM. In both experiments, pigs were randomly distributed to the treatments following a randomized complete block design on the basis of body weight as the blocking variable. Each experiment was conducted for 28 days. Blood and fecal samples were collected to determine mineral contents as affected by the dietary treatments. There was no difference (p>0.05) in ADG and ADFI among treatments, but F/G was improved (p<0.05) in pigs fed diet with 170 ppm CAC than 85 ppm CL but not different (p>0.05) to the control (170 ppm $CuSO_4$). Regardless of copper source, concentration of Cu in serum and feces were higher in pigs fed diet with 170 ppm Cu than pigs fed diet with 85 ppm Cu (Exp 1). In Exp 2 the ADG was higher (p<0.05) in pigs fed diet with 120 ppm ZM than in pigs fed diets with 120 ppm $ZnSO_4$ and 60 ppm ZAC and ZM. The serum zinc concentration was generally higher (p<0.05) in pigs fed diet with organic source than the control group ($ZnSO_4$). Also, there was a trend towards a decrease in fecal excretions of zinc when dietary zinc level was low. The efficacy of the two chelated copper and zinc sources is similar in terms of growth performance. The fecal excretions for Cu and Zn could be reduced in pigs fed low level of these minerals using organic sources.

Facile in situ Formation of CuO/ZnO p-n Heterojunction for Improved H2S-sensing Applications

  • Shanmugasundaram, Arunkumar;Kim, Dong-Su;Hou, Tian Feng;Lee, Dong Weon
    • Journal of Sensor Science and Technology
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    • v.29 no.3
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    • pp.156-161
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    • 2020
  • In this study, hierarchical mesoporous CuO spheres, ZnO flowers, and heterojunction CuO/ZnO nanostructures were fabricated via a facile hydrothermal method. The as-prepared materials were characterized in detail using various analytical methods such as powder X-ray diffraction, micro Raman spectroscopy, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, and transmission electron microscopy. The obtained results are consistent with each other. The H2S-sensing characteristics of the sensors fabricated based on the CuO spheres, ZnO flowers, and CuO/ZnO heterojunction were investigated at different temperatures and gas concentrations. The sensor based on ZnO flowers showed a maximum response of ~141 at 225 ℃. The sensor based on CuO spheres exhibited a maximum response of 218 at 175 ℃, whereas the sensor based on the CuO/ZnO nano-heterostructure composite showed a maximum response of 344 at 150 ℃. The detection limit (DL) of the sensor based on the CuO/ZnO heterojunction was ~120 ppb at 150 ℃. The CuO/ZnO sensor showed the maximum response to H2S compared with other interfering gases such as ethanol, methanol, and CO, indicating its high selectivity.

Effects of Copper and Zinc Supplementation on Growth Performance, Nutrient Digestibility, Meat and Carcass Characteristics in Finishing Pigs (구리 및 아연의 수준별 급여가 비육돈의 생산성, 영양소 소화율, 육질 및 도체 특성에 미치는 영향)

  • Kim, Y.H.;Kim, H.J.;Park, J.C.;Jung, H.J.;Cho, J.H.;Chen, Y.J.;Yoo, J.S.;Kim, I.C.;Lee, S.J.;Kim, I.H.
    • Food Science of Animal Resources
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    • v.27 no.3
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    • pp.284-289
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    • 2007
  • This study was conducted to investigate the effects of copper and zinc supplementation on growth performance, nutrient digestibility, and meat and carcass characteristics in finishing pigs. A total of 72 $(Landrace{\times}Yorkshire{\times}Duroc)$ pigs (58.47 kg initial BW) were assigned to 6 treatments in a $2{\times}3$ factorial design $(Zn\;levels{\times}Cu\;levels)$. The sources of zinc and copper were Zn-methionine chelate and Cu-methionine chelate, respectively. Zinc levels used were 80 and 120 ppm and copper levels used were 10, 30 and 60 ppm. Throughout the entire experimental period, the average daily gain (ADG) and average daily feed intake (ADFI) were not significantly affected by Cu or Zn levels, or their relative levels. The G:F ratio was significantly affected by the relative levels of Cu and Zn (p<0.05), specifically at 30 ppm Cu and 120 ppm Zn. Dry matter digestibility was significantly affected by the levels of Cu (p<0.02), Zn (p<0.01) and the relative levels of each (p<0.04), in particular at 30 ppm Cu and 120 ppm Zn. Nitrogen digestibility was significantly affected by Zn levels (p<0.01) and the combination of 30 ppm Cu and 120 ppm Zn (p<0.03). The $L^*-value$, shear force, cooking loss and pH were not significantly affected by Cu levels, Zn levels or their combination. The $a^*- (p<0.04)\;and\;b^*- values (p<0.01)$ were significantly affected by Zn levels at 80 ppm. The Water hoding capacity was significantly affected by Cu and Zn in combination (p<0.01) at 10 ppm Cu and 120ppm Zn. The carcass weight, backfat thickness and carcass grade were not significantly affected by Cu levels, Zn levels or their relative levels. The carcass percentage was significantly affected by the combination (p<0.04) of 30ppm Cu and 120ppm Zn. In conclusion, dietary supplementation of Cu and Zn at 30 and 120 ppm, respectively, is effective for feed efficiency, nutrient digestibility and carcass percentage, while at the levels of Cu at 10 ppm and Zn at 120 ppm have effects on WHC.

The ZnS Film Deposition Technology for Cd-free Buffer Layer in CIGS Solar Cells

  • Lee, Jae-Hee;Hwang, Do-Weon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.218-218
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    • 2011
  • The CIGS Solar Cells have the highest conversion efficiency in the film-type solar cells. They consist of p-type CuInSe2 film and n-type ZnO film. The CdS films are used as buffer layer in the CIGS solar cells since remarkable difference in the lattice constant and energy band gap of two films. The CdS films are toxic and make harmful circumstances. The CdS films deposition process need wet process. In this works, we design and make the hitter and lamp reflection part in the sputtering system for the ZnS films deposition as buffer layer, not using wet process. Film thickness, SEM, and AFM are measured for the uniformity valuation of the ZnS films. We conclude the optimum deposition temperature for the films uniformity less than 1.6%. The ZnS films deposited by the sputtering system are more dense and uniform than the CdS films deposited by the Chemical Bath Deposition Method(CBD) for the CIGS Solar Cells.

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