• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.237-238
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• 2008

Electrical properties of Pd/Zn/Pd/Au contacts to p-InP were investigated as function of the V/III ratio of p-InP. P-type InP was made by the Zn diffusion into InP and activation process with rapid thermal annealing (RTA) measurement. After activation, the hole concentration was two orders of magnitude higher than that of the sample having only diffusion process. According to transmission line method (TLM) results, the specific contact resistance of p-InP was lower as used InP having the lower V/III ratio. The experimental results represent that the diffusion of Zn in undoped InP deeply related to the equilibrium between interstitials and substitutional Zn is established via indium interstitials.

• Journal of Powder Materials
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• v.24 no.1
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• pp.6-10
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• 2017

This study investigates the main growth mechanism of InP during InP/ZnS reaction of quantum dots (QDs). The size of the InP core, considering a synthesis time of 1-30 min, increased from the initial 2.56 nm to 3.97 nm. As a result of applying the proposed particle growth model, the migration mechanism, with time index 7, was found to be the main reaction. In addition, after the removal of unreacted In and P precursors from bath, further InP growth (of up to 4.19 nm (5%)), was observed when ZnS was added. The full width at half maximum (FWHM) of the synthesized InP/ZnS quantum dots was found to be relatively uniform, measuring about 59 nm. However, kinetic growth mechanism provides limited information for InP / ZnS core shell QDs, because the surface state of InP changes with reaction time. Further study is necessary, in order to clearly determine the kinetic growth mechanism of InP / ZnS core shell QDs.

• Journal of Powder Materials
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• v.22 no.6
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• pp.385-390
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• 2015

We report a synthesis of non-toxic InP nanocrystals using non-pyrolytic precursors instead of pyrolytic and unstable tris(trimethylsilyl)phosphine, a popular precursor for synthesis of InP nanocrystals. In this study, InP nanocrystals are successfully synthesized using hexaethyl phosphorous triamide (HPT) and the synthesized InP nanocrystals showed a broad and weak photoluminescence (PL) spectrum. As synthesized InP nanocrystals are subjected to further surface modification process to enhance their stability and photoluminescence. Surface modification of InP nanocrystals is done at $230^{\circ}C$ using 1-dodecanethiol, zinc acetate and fatty acid as sources of ZnS shell. After surface modification, the synthesized InP/ZnS nanocrystals show intense PL spectra centered at the emission wavelength 612 nm through 633 nm. The synthesized InP/ZnS core/shell structure is confirmed with X-ray diffraction (XRD) and Inductively Coupled Plasma - Atomic Emission Spectrometer (ICP-AES). After surface modification, InP/ZnS nanocrystals having narrow particle size distribution are observed by Field Emission Transmission Electron Microscope (FE-TEM). In contrast to uncapped InP nanocrystals, InP/ZnS nanocrystals treated with a newly developed surface modified procedure show highly enhanced PL spectra with quantum yield of 47%.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.183-186
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• 1990

The lattice mismatch between ZnS and Si is negligible because of its value being 0.39%. In this study, $ZnS/_{(P)}Si$ solar cell were fabricated as a layer of ZnS is epitaxially grown on a silicon substrate by PVD method and its photovoltaic properties were measured and discussed. The heat treatment was done after deposition. As the temperature increased up to a certain value, the film has better perfection in crystal structure and electrical characteristics. Measurments of the change that occur in the ZnS films were made by SEM., X-ray diffraction. The optimal thickness of film showned $0.6{\mu}m$, being measured by SEM. The great improvement of the grain growth ZnS film came out after heat-treatment. The result obtained from the $ZnS/_{(P)}Si$ solar cell as follows:short circuit current; $I_{sc}=54mA/cm^2$,open voltage; $V_{oc}=400mV$, fill factor FF=0.72, conversion efficiency; ${\eta}=15.6%$ under the irradiation of 100 ($mW/cm^2$) focused by solar energy. And these are discussed in comparison with other kinds.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.3
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• pp.97-101
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• 2005

ZnO thin films were grown at different plume-substrate (P-S) angles of 90$^{\circ}$ (on-axis PLD), 45$^{\circ}$ and 0$^{\circ}$ (off-axis PLD) using pulsed laser deposition. The x-ray diffraction pattern exhibiting a dominant (002) and a minor (101) peak of ZnO indicates all films were strongly c-axis oriented. By observing of (002) peak, the FWHMs of ZnO (002) peaks decreased and c-axis lattice constant approached the value of bulk ZnO as P-S angle decreased. Whereas the carrier concentration of ZnO thin film deposited at P-S angle of 90$^{\circ}$ was ~ 10$^{19}$ /cm$^{3}$, the Hall measurement of ZnO thin films deposited at P-S angles of 0$^{\circ}$ and 45$^{\circ}$ was impossible due to the decrease of the carrier concentration by the improvement of stoichiometry and crystalline quality. By decreasing P-S angle, the grain size of the films and the UV intensity investigated by photoluminescence (PL) increased and UV peak position showed red shift. The improvement of properties in ZnO thin films deposited by off-axis technique was due to the decrease of repulsive force between a substrate and the particle in plume and the relaxation of supersaturation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.147-150
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• 1998

Since P-ELD(powders type electroluminescent device) phenomena were found by G.Destriau at first In 1936, lots of studying was performed in order to realize surface emission devices and flat panel display as a backlight. Due to the problem of low luminance and color and so on, it was delayed. Recently using electric field and thermal effect which can change it\`s molecular arrangement, it can be developed using photoelectric properties of P-ELD. P-ELD in this study was prepared by casting method. Basic structure is ITO/Phosphor/insulator/Al sheet, each layer was mixed by binder, which concentration 11p(poise) for phosphor, 8p(poise) fort insulator. Dielectric properties was investigated first and emission properties of P-ELD based on ZnS:Mn,Cu/ZnS:Cu,Br mixture. P-ELD prepared in this work exhibits about 100cd/㎡ 1-kHz simusoidal excitation.

• Mycobiology
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• v.35 no.3
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• pp.135-144
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• 2007

The removal efficiency of the heavy metals Zn, Pb and Cd by the zoosporic fungal species Saprolegnia delica and the terrestrial fungus Trichoderma viride, isolated from polluted water drainages in the Delta of Nile in Egypt, as affected by various ranges of pH values and different temperature degrees, was extensively investigated. The maximum removal efficiency of S. delica for Zn(II) and Cd(II) was obtained at pH 8 and for Pb(II) was at pH 6 whilst the removal efficiency of T. viride was found to be optimum at pH 6 for the three applied heavy metals. Regardless the median lethal doses of the three heavy metals, Zn recorded the highest bioaccumulation potency by S. delica at all pH values except at pH 4, followed by Pb whereas Cd showed the lowest removal potency by the fungal species and vice versa in case of T. viride. The optimum bio-mass dry weight production by S. delica was found when the fungus was grown in the medium treated with the heavy metal Pb at pH 6, followed by Zn at pH 8 and Cd at pH 8. The optimum biomass dry weight yield by T. viride amended with Zn, Pb and Cd was obtained at pH 6 for the three heavy metals with the maximum value at Zn. The highest yield of biomass dry weight was found when T. viride treated with Cd at all different pH values followed by Pb whilst Zn output was the lowest and this result was reversed in case of S. delica. The maximum removal efficiency and the biomass dry weight production for the three tested heavy metals was obtained at the incubation temperature $20^{\circ}C$ in case of S. delica while it was $25^{\circ}C$ for T. viride. Incubation of T. viride at higher temperatures ($30^{\circ}C\;and\;35^{\circ}C$) enhanced the removal efficiency of Pb and Cd than low temperatures ($15^{\circ}C\;and\;20^{\circ}C$) and vice versa in case of Zn removal. At all tested incubation temperatures, the maximum yield of biomass dry weight was attained at Zn treatment by the two tested fungal species. The bioaccumulation potency of S. delica for Zn was higher than that for Pb at all temperature degrees of incubation and Cd bioaccumulation was the lowest whereas T. viride showed the highest removal efficiency for Pb followed by Cd and Zn was the minor of the heavy metals.

• Journal of Powder Materials
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• v.24 no.4
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• pp.321-325
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• 2017

In this study, we investigate the optical properties of InP/ZnS core/shell quantum dots (QDs) by controlling the synthesis temperature of InP. The size of InP determined by the empirical formula tends to increase with temperature: the size of InP synthesized at $140^{\circ}C$ and $220^{\circ}C$ is 2.46 nm and 4.52 nm, respectively. However, the photoluminescence (PL) spectrum of InP is not observed because of the formation of defects on the InP surface. The growth of InP is observed during the deposition of the shell (ZnS) on the synthesized InP, which is ended up with green-red PL spectrum. We can adjust the PL spectrum and absorption spectrum of InP/ZnS by simply adjusting the core temperature. Thus, we conclude that there exists an optimum shell thickness for the QDs according to the size.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.353-355
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• 1988

The properites of Zn-diffusion in III-V ternary alloy semiconductor $In_{1-x}Ga_{x}p$, which was grown by the temperature gradient solution (TGS) method, have been investigated. The composition, x, dependence of the Zn-diffusion coefficient at $850^{\circ}C$ and the activation energy for Zn-diffusion into $In_{1-x}Ga_{x}p$ were found to be $D850^{\circ}C$(x)= $3.935{\times}10^{-8}exp(-6.84{\cdot}x)$, and $E_{A}(x)=1,28+2,38{\cdot}x$, respectively. From this study, we confirm that the Zn-diffusion in $In_{1-x}Ga_{x}p$ was explainable with the diffusion mechanisms of the interstitial-substitutional, which was widely accepted mechanisms in the III-V binary semiconductors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.145-146
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• 2006

The most Important research topic in the development of ZnO LED and LD is the production of p-type ZnO thin film that has minimal stress with outstanding stoichiometric ratio. In this study, Phosphorus diffused into the undoped ZnO thin films using the ampoule-tube method for the production of p-type znO thin films. The undoped ZnO thin films were deposited by RF magnetron sputtering system on $GaAs_{0.6}P_{0.4}$/GaP and Si wafers. 4N Phosphorus (P) was diffused into the undoped ZnO thin films in ampoule-tube which was performed and $630^{\circ}C$ during 3hr. We found the diffusion condition of the conductive ZnO films which had p-type properties with the highest mobility of above 532 $cm^2$/Vs compared with other studies PL spectra measured at 10K for the purpose of analyzing optical properties of p-type ZnO thin film showed strong PL intensity in the UV emission band around 365nm ~ 415nm and 365nm ~ 385nm.