• Journal of Microbiology and Biotechnology
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• v.20 no.12
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• pp.1744-1749
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• 2010

The role of endophytic fungi in plant growth and development is well documented. However, endophytic fungi with growth promotion capacity have never been isolated from weeds previously. In the current study, we isolated 8 fungal endophytes from the roots of Monochoria vaginalis, a serious weed of rice paddy in Korea. These isolates were screened on Waito-C, in order to identify plant growth promoting metabolites. Two fungal isolates (M5.A & M1.5) significantly promoted the plant height and shoot length of Waito-C during preliminary screening experiments. The culture filtrates (CFs) of M5.A and M1.5 also promoted the shoot length of Echinocloa crusgalli. Gibberellins (GAs) analysis of the CFs of M5.A and M1.5 showed that these endophytic fungi secrete higher quantities of GAs as compared with wild-type G. fujikuroi KCCM12329. The CF of M5.A contained bioactive GAs ($GA_3$, 2.8 ng/ml; $GA_4$, 2.6 ng/ml, and $GA_7$, 6.68 ng/ml) in conjunction with physiologically inactive $GA_9$ (1.61 ng/ml) and $GA_{24}$ (0.18 ng/ml). The CF of M1.5 contained physiologically active GAs ($GA_3$, 1.64 ng/ml; $GA_4$, 1.37 ng/ml and $GA_7$, 6.29 ng/ml) in conjunction with physiologically inactive $GA_9$ (3.44 ng/ml), $GA_{12}$ (0.3 ng/ml), and $GA_{24}$ (0.59 ng/ml). M5.A and M1.5 were identified as new strains of Penicillium sp. and Aspergillus sp., respectively, based on their 18S rDNA sequence homology and phylogenetic analysis.

• Ceramist
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• v.10 no.3
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• pp.28-33
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• 2007

The structural and optical properties of Ni-doped transparent glass-ceramics are reviewed. The quantum efficiencies of ceramics were examined to explore suitable crystalline phase for Ni-doping in glass-ceramics. Inverse spinel $LiGa_5O_8$ have the quantum efficiency of almost 100 % at room temperature. Transparent glass ceramics containing $LiGa_5O_8$ was successfully synthesized by heat treatment of $Li_2O-Ga_2-O_3-SiO_2-NiO$ glass. Most of $Ni^{2+}$ ions in glass-ceramic were incorporated into $LiGa_5O_8$ nanocrystals. The near-infrared emission covering from the O-band to L-band (1260-1625 nm) was observed from the Ni-doped $Li_2O-Ga_2O_3-SiO_2$ glass-ceramic though it was not observed from the as-cast glass. The lifetime of the emission was about $580\;{\mu}sec$ even at 300K. The emission quantum efficiency was evaluated as about 10 % that is enough high for practical usage as gain media of optical fiber amplifiers. The figure of merit (the product of the stimulated emission cross section and lifetime) was as high as that of rare-earth-doped glasses. The broad bandwidth, high quantum efficiency and high figure of merit show that transparent glass-ceramics containing $Ni^{2+}:LiGa_5O_8$ nanocrystals are promising candidates as novel ultra-broadband gain media.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.5
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• pp.920-927
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• 1994

A development of an efficient 14.0~14.5GHz 3 Watt SSPA is described in this paper, which is applicable to the very small aperture terminal(VSAT) for bidirectional data and voice signal transmission in low cost and with small size. The SSPA consists of two stages of low noise amplifiers using the low noise GaAs FETs. two stages of medium power amplifiers using the medium power GaAs FETs, and three stages of power amplifiers including a balanced amplifier using an internally matched power GaAs FET. The achieved with this seven stage amplifiers are 42dB signal power gain, 7dB noise figure, 35dBm output power at 1dB gain compression point and 2.0 and 1.5 input and output VSWR respectively.

• Nuclear Medicine and Molecular Imaging
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• v.43 no.4
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• pp.330-336
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• 2009

Purpose: We established radiolabeling conditions of NOTA and DOTA with a generator-produced PET radionuclide $^{68}$Ga and studied in vitro characteristics such as stability, serum protein binding, octanol/water distribution, and interference with other metal ions. Materials and Methods: Various concentrations of NOTA 3HCl and DOTA 4HCl were labeled with 1 mL $^{68}$GaCl$_3$ (0.18$\sim$5.75 mCi in 0.1 M HCl in various pH. NOTA 3HCl (0.373 mM) was labeled with $^{68}$GaCl$_3$(0.183$\sim$0.232 mCi/0.1 M HCl 1.0 mL) in the presence of CuCl$_2$, FeCl$_2$, InCl$_3$, FeCl$_3$, GaCl$_3$, MgCl$_2$ or CaCl$_2$ (0$\sim$6.07 mM) at room temperature. The labeling efficiencies of $^{68}$Ga-NOTA and $^{68}$Ga-DOTA were checked by ITLC-SG using acetone or saline as mobile phase. Stabilities, protein bindings, and octanol distribution coefficients of the labeled compounds also were investigated. Results: $^{68}$Ga-NOTA and $^{68}$Ga-DOTA were labeled optimally at pH 6.5 and pH 3.5, respectively, and the chelates were stable for 4 hr either in the reaction mixture at room temperature or in the human serum at 37$^{\circ}C$. NOTA was labeled at room temperature while DOTA required heating for labeling. $^{68}$Ga-NOTA labeling efficiency was reduced by CuCl$_2$, FeCl$_2$, InCl$_2$, FeCl$_3$ or CaCl$_3$, however, was not influenced by MgCl$_2$ or CaCl$_2$. The protein binding was low (2.04$\sim$3.32%). Log P value of $^{68}$Ga-NOTA was -3.07 indicating high hydrophilicity. Conclusion: We found that NOTA is a better bifunctional chelating agent than DOTA for $^{68}$Ga labeling. Although, $^{68}$Ga-NOTA labeling is interfered by various metal ions, it shows high stability and low serum protein binding.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 1995.04a
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• pp.187-194
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• 1995

Traditional genetic algorithms(GA) have mostly used binary code for representing design variable. The binary code GA has many difficulties to solve optimization problems with continuous design variables because of its targe computer core memory size, inefficiency of its computing time, and its bad performance on local search. In this paper, a real code GA is proposed for dealing with the above problems. So, new crossover and mutation processes of read code GA are developed to use continuous design variables directly. The results of real code GA are compared with those of binary code GA for several single and multiple objective optimization problems. As results of comparisons, it is found that the performance of the real code GA is better than that of the binary code GA, and concluded that the rent code GA developed here can be used for the general optimization problem.

• Korean Journal of Materials Research
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• v.12 no.4
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• pp.304-307
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• 2002

A zinc oxide (ZnO) single crystal was used as a substrate in the hydride vapor-phase epitaxy (HVPE) growth of GaN and the structural and optical properties of GaN layer were characterized by x- ray diffraction, transmission electron microscopy, secondary ion mass spectrometry, and photoluminescence (PL) analysis. Despite a good lattice match and an identical structure, ZnO is not an appropriate substrate for application of HVPE growth of GaN. Thick film could not be grown. The substrate reacted with process gases and Ga, being unstable at high temperatures. The crystallinity of ZnO substrate deteriorated seriously with growth time, and a thin alloy layer formed at the growth interface due to the reaction between ZnO and GaN. The PL from a GaN layer demonstrated the impurity contamination during growth possibly due to the out-diffusion from the substrate.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.53 no.6
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• pp.433-439
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• 2004

The Helicopter Simulator System is non-linear and complex. Futhermore, because of absence of its accurate mathematical model, it is difficult to control accurately its attitudes such as elevation angle and azimuth one. Therefore, we proposed a Hybrid GA-PID WAVENET(Genetic Algorithm Proportional Integral Derivative Wavelet Neural Network)control technique to control efficiently these angles. The proposed Hybrid GA-PID WAVENET is made through the following process. First, the WAVENET fundamental functions are defined. And their dilation and translation values are adjusted by GA to construct the optimal WAVENET controller. Secondly, the proportional, integral, and derivative gain coefficients of PR controller are tuned optimally. Finally, WAVENET controller which has a good transient characteristic and GA-PE controller which has a good steady state characteristic is adequately combined in hybrid type. Through the computer simulations, it is proved that the Hybrid GA-PE WAVENET control technique has a more excellent dynamic response than PID control technique and GA-PID one.

• ETRI Journal
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• v.27 no.3
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• pp.304-311
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• 2005

We report on the fabrication of an AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) using a dielectric-defined process. This process was utilized to fabricate $0.12\;{\mu}m\;{\times}\;100 {\mu}m$ T-gate PHEMTs. A two-step etch process was performed to define the gate footprint in the $SiN_x$. The $SiN_x$ was etched either by dry etching alone or using a combination of wet and dry etching. The gate recessing was done in three steps: a wet etching for removal of the damaged surface layer, a dry etching for the narrow recess, and wet etching. A structure for the top of the T-gate consisting of a wide head part and a narrow lower layer part has been employed, taking advantage of the large cross-sectional area of the gate and its mechanically stable structure. From s-parameter data of up to 50 GHz, an extrapolated cut-off frequency of as high as 104 GHz was obtained. When comparing sample C (combination of wet and dry etching for the $SiN_x$) with sample A (dry etching for the $SiN_x$), we observed an 62.5% increase of the cut-off frequency. This is believed to be due to considerable decreases of the gate-source and gate-drain capacitances. This improvement in RF performance can be understood in terms of the decrease in parasitic capacitances, which is due to the use of the dielectric and the gate recess etching method.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.10
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• pp.23-28
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• 2010

In this paper, we investigated the polarization effects on the electrical and structural characteristics of AlGaN/GaN HEMT. Both the Al mole-fraction and the barrier thickness of AlGaN, which determine the profiles of a two-dimensional electron gas, were simulated to obtain the optimum HEMT structure affecting the polarization effect. As a results, we found that the amount of bound sheet charges was increased by 16% and the maximum drain current density ($I_D$,max) was increased by more than 37%, while AI mole fractions are changed from 0.3 to 0.4. We also observed a 37% improvement in maximum drain current density ($I_D$,max) by increasing AIGaN layer thickness from 17 to 38 nm. However when AlGaN layer thickness reached the critical thickness, DC characteristics were dramatically lowered due to 'bulk' relaxation in AlGaN layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.9
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• pp.781-786
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• 2005

The binding energy in the n-type $GaAs/Al_xGa_{1-x}As$ quantum well is calculated. The shooting method, modified from the finite difference method, is used for the calculation of the subband energy level and its wave function. In order to account tot the change of the potential energy due to the charged particles, impurities and electrons, the self consistent method is employed. The wave function used for the calculation of the binding energy is assumed to be composed of the envelope function and hydrogenic 1s function. Then, the binding energies calculated by taking into account lot two different types of the hydrogenic 1s function are compared.