• Biotechnology and Bioprocess Engineering:BBE
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• v.8 no.5
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• pp.269-278
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• 2003

Gibberellic acid (GA$_3$) is a commercially important plant growth hormone, which is gaining much more attention all over the world due to its effective use in agriculture and brewing industry. Industrially it is produced by submerged fermentation technique using Ascomycetous fungus Gibberella fujikuroi. Solid state and immobilized cell fermentation techniques had also been developed as an alternative to obtain higher yield of GA$_3$. This review summarizes the problems of GA$_3$ fermentation such as production of co-secondary metabolites along with GA$_3$, substrate inhibition and degradation of GA$_3$ to biologically inert compound gibberellenic acid, which limits the yield of GA$_3$ in the fermentation medium. These problems can be overcome by various bioprocessing strategies e.g. two - stage and fed batch cultivation processes. Further research on bioreactor operation strategies such as continuous and / or extractive fermentation with or without cell recycle / retention system need to be investigated for improvement in yield and productivity. Down stream processing for GA$_3$ isolation is also a challenge and procedures available for the same have been critically evaluated.

• Current Research on Agriculture and Life Sciences
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• v.1
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• pp.35-40
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• 1983

This study was conducted to obtain basic informations for growth regulators on occurrence of sucker in tobacco plants (Nicotiana tabacum L.). Varieties used were "hicks" and "kusaga mammoth" and growth regulators such as MH(maleic hydrazide), GA(Gibberellic acid) and BA(Benzyl adenine) were used. Immediately after topping, an application of maleic hydrazide at 900g a.i./ha completely inhibited sucker development, but sucker were developed as the rates of MH decreased, in both varieties. In nontopped tobacco plants, the similar trend as in the topped plant was observed except for no sucker development in the untreated control. Any combination of GA and BA under presence of MH had no effects on sucker development in the topped tobacco plants. However, in the nontopped plants, sucker were observed when the combined ratio of BA and GA was 10 to 1 under the presence of MH standard level. The highest no. of sucker was obtained when combined BA $10^{-5}M$ with GA $10^{-6}M$ under the presence of MH, showing higher response of hicks than that of kusaga mammoth. A single application of GA and BA in the topped plants markedly increased sucker number as GA concentrations increased showing varietal difference. GA $10^{-4}M$ increased sucker number as high as as 42% for hicks, but inhibitory effect on kusaga mammoth in comparision with the untreated control, showing very effective on hicks. BA showed the similar effect like GA. Combinations of GA and BA showed antagonistic effect on sucker development. The length of sucker was markedly promoted as the GA rates increased, and the promotive effect of sucker length by GA was not nullified by the addition of BA. But combination treatment of GA and BA mostly resulted in less dry weight than the untreated control, indicating that sucker developed from the combined treatments of GA and BA were not normal and kusaga mammoth was more affected by them.

• Korean Journal of Medicinal Crop Science
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• v.9 no.3
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• pp.198-204
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• 2001

$GA_3$ treatments for seeds of Perilla frutescens var. acuta Kudo were evaluated as a means of improving the percent germination, and the interactions of $GA_3$, mulching, and sowing depth on seedling emergence were investigated in late sowing. Percentage germination of seeds treated with different concentration of $GA_3$ was the most effective in 100 ppm treatment for 24 hours. The germinability according to the seeds soaking time was not significantly different over 12 hours in 100 ppm $GA_3$. At high temperature $(25^{\circ}C\;and\;30^{\circ}C)$, percentage germination was significantly increased in 100 ppm ${GA_3}$ treatment. In late sowing (1th or 15th May), seedling emergence was significantly higher in 100 ppm $GA_3$ treatment than nontreatment, and that was significantly increased when the seeds treated with 100 ppm $GA_3$ were mulched with 10 mm rice hull after molding with 5 mm soil depth.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.22-29
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• 2011

An infrared thermographic imaging module of [$320{\times}256$] focal-plane array (FPA) based on [InAs/GaSb] strained-layer superlattice (SLS) was fabricated, and its images were demonstrated. The p-i-n device consisted of an active layer (i) of 300-period [13/7]-ML [InAs/GaSb]-SLS and a pair of p/n-electrodes of (60/115)-period [InAs:(Be/Si)/GaSb]-SLS. FTIR photoresponse spectra taken from a test device revealed that the peak wavelength (${\lambda}_p$) and the cutoff wavelength (${\lambda}_{co}$) were approximately $3.1/2.7{\mu}m$ and $3.8{\mu}m$, respectively, and it was confirmed that the device was operated up to a temperature of 180 K. The $30/24-{\mu}m$ design rule was applied to single pixel pitch/mesa, and a standard photolithography was introduced for [$320{\times}256$]-FPA fabrication. An FPA-ROIC thermographic module was accomplished by using a $18/10-{\mu}m$ In-bump/UBM process and a flip-chip bonding technique, and the thermographic image was demonstrated by utilizing a mid-infrared camera and an image processor.

• Korean Journal of Materials Research
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• v.5 no.8
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• pp.936-944
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• 1995

The effects of Spinodal decomposition induced phase separated microstructure of InGaAsP/InP heterostructure on photoluminescence(PL) intensity and FWHM(full-width at half maximum) were investigated in this study. Lattice mismatches were measured by double crystal x-ray diffractometer, and the microstructures of phase separated InGaAsP were observed by transmission electron microscopy. It was found that the misfit stress calculated from lattice mismatch was related to the periodicity of Spinodal modulation. Strong dependence of PL intensity and FWHM on the modulation periodicity was also found. For systematic understanding of these observations, the interaction elastic strain energy function induced by misfit stress was proposed. The calculation illustrated that the microstructure of the epilayer such as Spinodal decomposition played an important role in determining the optoelectronic properties such as PL intensity and PL FWHM.

• Transactions on Electrical and Electronic Materials
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• v.14 no.3
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• pp.148-151
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• 2013

The control of Ga doping in ZnO nanowires (NWs) by physical vapor deposition has been implemented and characterized. Various Ga-doped ZnO NWs were grown using the vapor-liquid-solid (VLS) method, with Au catalyst on c-plane sapphire substrate by hot-walled pulsed laser deposition (HW-PLD), one of the physical vapor deposition methods. The structural, optical and electrical properties of Ga-doped ZnO NWs have been systematically analyzed, by changing Ga concentration in ZnO NWs. We observed stacking faults and different crystalline directions caused by increasing Ga concentration in ZnO NWs, using SEM and HR-TEM. A $D^0X$ peak in the PL spectra of Ga doped ZnO NWs that is sharper than that of pure ZnO NWs has been clearly observed, which indicated the substitution of Ga for Zn. The electrical properties of controlled Ga-doped ZnO NWs have been measured, and show that the conductance of ZnO NWs increased up to 3 wt% Ga doping. However, the conductance of 5 wt% Ga doped ZnO NWs decreased, because the mean free path was decreased, according to the increase of carrier concentration. This control of the structural, optical and electrical properties of ZnO NWs by doping, could provide the possibility of the fabrication of various nanowire based electronic devices, such as nano-FETs, nano-inverters, nano-logic circuits and customized nano-sensors.

• Journal of Radiopharmaceuticals and Molecular Probes
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• v.1 no.1
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• pp.46-52
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• 2015

Herein we present the synthesis of $^{68}Ga$-labeled gold nanoparticles for in vivo PET imaging. A novel chelator DTPA-Cys was easily prepared from diethylenetriaminepentaacetic dianhydride in high yield. The ${\alpha}_v{\beta}_3$ integrin receptor targeted gold nanoparticle probe was synthesized by using DTPA-Cys, polyethylene glycol and cRGD peptide. $^{68}Ga$ labeling of cRGD conjugated gold nanoparticle was carried out at $40^{\circ}C$ for 30 min. Observed radiochemical yield was more than 75% as determined by radio-TLC and the probe was purified by centrifugation. In vitro stability test showed that 90% of $^{68}Ga$-labeled gold nanoparticle probe was stable in FBS for 1 h. Those results demonstrated that $^{68}Ga$-labeled gold nanoparticle could be used as a potentially useful probe for specific tumor imaging.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.165-165
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• 2003

The growth of GaN on Si is of great interest due to the several advantages low cost, large size and high-quality wafer availability as well as its matured technology. The crystal quality of GaN is known to be much influenced by the surface pretreatment of Si substrate [1]. In this work, the properties of GaN overlayer grown on ion implanted Si(111)and bare Si(111) have been investigated. Si(111) surface was treated ion implantation with 60KeV and dose 1${\times}$10$\^$16//$\textrm{cm}^2$ prior to film growth. GaN epilayers were grown at 1100$^{\circ}C$ for 1 hour after growing AlN buffer layers for 15-30 minutes at 1100$^{\circ}C$ with metal organic chemical vapor deposition (MOCVD). The properties of GaN epilayers were evaluated by X-Ray Diffraction (XRD), Scanning electron microscope (SEM) Photoluminescence (PL) at room temperature and Hall measurement The results showed that the GaN on ion implanted Si(111) markedly affected to the structural, optical and electrical characteristic of GaN layers.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.79-86
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• 2006

N-polar, Ga-polar, and non-polar GaN was grown by MBE and MOVPE using various substrates and influence of polarity has been investigated. The GaN growth by MOVPE is along cplane (0001), c-plane (0001), and a-plane (11-20) direction on c-plane (0001), a-plane (11-20) and r-plane (1-102) sapphire substrate respectively. The polarity of the film has a strong influence on the morphology and the optical properties of PA-MBE grown As-doped GaN layers. Strong blue emission from As-doped GaN was observed only in the case of N-polarity (000-1) layers, which was attributed to the highest concentration of Ga dangling bonds for this polarity of a GaN surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.210-210
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• 2012

Ge 기판을 이용한 GaInP/GaAs/Ge 삼중접합 태양전지는 43.5%의 높은 광전효율을 기록하고 있으며, 이를 지상용 태양광 발전시스템에 이용하려는 연구가 진행 중이다[1]. 그러나, 이러한 다중접합 태양전지는 셀 제작 비용에 있어 Ge기판의 가격이 차지하는 비중이 높고 대면적 기판을 이용하기 힘든 단점이 있다. 한편, 무게, 기계적 강도와 열전도도 측면에서 Si 기판은 Ge 기판에 비해 장점이 있다. 아울러, 상대적으로 낮은 가격의 대면적 기판을 사용할 수 있기 때문에 Si 기판으로 Ge 기판을 대체할 경우 다중접합 태양전지의 높은 제작 비용을 낮추는 효과도 기대할 수 있다. Si 기판의 장점을 취하며 고효율 태양전지를 제작하기 위해, 이번 실험에서 우리는 Ge 에피층이 성장된 Si 기판 위에 GaAs 태양전지를 제작하였다. GaAs, GaInP와 비슷한 격자상수를 갖고 있는 Ge과 달리, Si은 이들 물질(GaAs, GaInP)과 4%의 격자상수 차이를 갖고 있으며 이로 인해 성장과정에서 관통전위가 발생하게 된다. 이러한 관통전위는 소자의 개방전압을 감소시키는 원인으로 작용한다. 실제로 Si 기판 위에 제작된 GaAs/Ge 이중접합 태양전지에서 관통전위 밀도에 따른 개방전압 감소를 확인할 수 있었다. 관통전위로 인한 영향 이외에, Si 기판위에 제작된 태양전지에서는Ge 기판 위에 제작된 태양전지에 비하여 낮은 fill factor가 관찰되었다. 이것은 Si 기판 위에 제작된 GaAs/Ge 이중접합 태양전지가 높은 직렬저항을 가지고 있기 때문이다. 따라서 이번 실험에서는 Si 기판 위에 제작한 GeAs/Ge 이중접합 태양전지의 직렬저항의 원인을 전산모사와 실험을 통하여 규명하였다. TCAD (APSYS-2010)를 이용한 전산모사 결과, Si 기판의 낮은 불순물 농도 ($1{\times}10^{15}/cm^3$)에 따른 직렬저항의 원인으로 파악되었으며, 전류-전압 특성을 측정하여 실험적으로 이를 확인하였다. 이러한 직렬저항 성분을 줄이기 위하여 Si 기판의 p형 불순물 농도가 전류 전압 특성 곡선에 미치는 영향을 전산모사를 통하여 알아보았으며, Si 기판의 불순물 농도가 $1{\times}10^{17}/cm^3$ 이상으로 증가할 경우, 직렬저항 성분이 크게 감소 하는 것을 전산모사 결과로 예상할 수 있었다.