• Transactions on Electrical and Electronic Materials
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• 제5권2호
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• pp.50-54
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• 2004

The AgInS$_2$epilayers with chalcopyrite structure grown by using a hot-wall epitaxy (HWE) method have been confirmed to be a high quality crystal. From the optical absorption measurement, the temperature dependence of the energy band gap on the AgInS$_2$/GaAs was derived as the Varshni's relation of E$\_$g/(T) = 2.1365 eV - (9.89${\times}$10$\^$－3/ eV/K) T$^2$/(2930＋T eV). After the as-grown AgInS$_2$/GaAs was annealed in Ag－, S－. and In-atmosphere, the origin of point defects of the AgInS$_2$/GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of $V_{Ag}$, $V_s$, $Ag_{int}$, and $S_{int}$ obtained from PL measurement were classified to donors or accepters type. And, we concluded that the heat-treatment in the S- atmosphere converted the AgInS$_2$/GaAs to optical p-type. Also, we confirmed that the In in the AgInS$_2$/GaAs did not form the native defects because the In in AgInS$_2$did exist as the form of stable bonds.

• 한국재료학회지
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• 제7권6호
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• pp.484-491
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• 1997

본 연구에서는 비파괴적 분석 기법인 각분해 X-선 광전자 분광기(Angle-Resolved X-ray Photoelectron Spectros-copy)를 이용하여 GaAs 표면 자연 산화막의 깊이에 따른 화학적 결합 상태 및 조성 분석을 수행하였다. GaAs의 벽개면 및 Ar이온으로 식각된 면을 기준시료로 하여 각 원자의 광전자 강도(intensity)를 보정해주는 인자인 ASF(atomic sensitivity factor)의 최적값을 구하였다. 이륙각에 따라 발생되어지는 각 원소의 피이크 분해와 정확한 ASF의 보정을 통한 각 원소의 실험적인 결과를 이용하여 깊이 방향으로의 조성 분포 모델을 세웠으며, 이론적인 강도와의 상호비교로부터 표면 오염층의 구조는 표면으로부터 탄소층, Ga-oxide와 As-oxide로 이루어진 oxides층, As-As결합의 elemental As층 및 GaAs기판의 순으로 존재함을 알 수 있었다. 또한 GaAs 표면에 존재하는 오염층은 35.8$\pm$3.3 $\AA$이었다. 또한 위 결과로부터 분석깊이 영역에서 원자수의 비로써 정의되는 의미로서의 실질조성을 구하였는데 단지 특정 이륙각에 따라 일반적인 ASF로 보정된 표면조성 결과는 표면 상태를 명확히 표현해주지 못함을 확인할 수 있었다.

• 전자공학회논문지
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• 제50권2호
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• pp.91-97
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• 2013

높은 전류밀도를 갖는 AlGaN/GaN 전력소자는 소자 동작 시에 발생하는 자체발열 현상으로 인해 소자의 전류-전압특성이 저하된다. 특히 열전도도가 낮은 Si 기판을 사용할 경우 더욱 심각한 문제를 발생시킨다. 본 논문에서는 Si기판에 성장한 AlGaN/GaN-on-Si 웨이퍼를 사용하여 전력소자를 제작하였으며, 채널 폭과 Si기판의 두께에 따른 자체 발열 현상을 측정과 시뮬레이션을 통하여 분석하였다. 그리고 이를 기반으로 다채널을 갖는 대면적 전력소자 설계에서 최대전류를 얻기 위하여 열방출을 효과적으로 할 수 있는 구조를 제안하였다. 비아홀과 공통전극을 사용하고 Si 기판을 100 ${\mu}m$로 얇게 하였을 때 래핑을 하지 않은 소자 대비 약 75%의 온 상태 전류증가와 68% 이상의 채널온도 감소가 기대된다.

• Journal of Electrical Engineering and Technology
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• 제6권4호
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• pp.535-538
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• 2011

The electromodulation methods of photoreflectanceand the related technique of contactless electroreflectance(CER) are valuable tools in the evaluation of important device parameters for structures such as heterojunction bipolar transistors, pseudomorphic high electron mobility transistors, and quantum dots(QDs). CER is a very general principle of experimental physics. Instead of measuring the optical reflectance of the material, the derivative with respect to a modulating electric field is evaluated. This procedure generates sharp, differential-like spectra in the region of interband (intersubband) transitions. We conduct electric-optical studies of both GaAs layers and InAs selfassembled QDs grown by molecular beam epitaxy. Strong GaAsbandgap energy is measured in both structures. In the case of lnAs monolayers in GaAs matrices, the strong GaAsbandgap energy is caused by the lateral quantum confinement.

• 열처리공학회지
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• 제31권5호
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• pp.237-243
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• 2018

In-rich InGaN epilayers were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). InGaN epilayers grown at various growth condition were observed by SEM, XRD, and RHEED. When plasma power of nitrogen increased from 290 to 350 W, surface morphology and crystal quality became worse according to more active nitrogen on the surface of InGaN at N-rich growth condition. As In composition was reduced from 89 to 71% by changing the incoming flux of In and Ga, surface morphology and crystal quality became worse. In addition, weak peaks of cubic InGaN phase was observed from InGaN layer with 71% In composition by XRD ${\Phi}$ scan measurement. When growth temperature decreased from 500 to $400^{\circ}C$, RHEED diffraction pattern was changed to be from streaky to spotty which means atomically rough surface, and spotty pattern showed cubic symmetry of InGaN clearly. XRD ${\Phi}$ scan measurement gave clear evidence that more cubic InGaN phase was formed at low growth temperature. All these results indicates that extremely low surface mobility of Ga adatom caused inferior crystal quality and cubic InGaN phase.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권2호
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• pp.63-68
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• 2003

The DC and RF characteristics of $In_{0.5}Ga_{0.5}P/In_{0.22}Ga_{0.78}As/GaAs$ p-HEMTs with a gate oxide layer of various thicknesses ($50{\;}{\AA},{\;}300{\;}{\AA}$) were investigated and compared with those of a Schottky-gate p-HEMT without the gate oxide layer. A prominent improvement in the breakdown voltage characteristics were observed for a p-HEMT having a gate oxide layer, which was implemented by using a liquid phase oxidation technique. The on-state breakdown voltage of the p-HEMT having the oxide layer of $50{\;}{\AA}$was ~2.3 times greater than that of a Schottky-gate p-HEMT. However, the p-HEMT having the gate oxide layer of $300{\;}{\AA}$ suffered from a poor gate-control capability due to the drain induced barrier lowering (DIBL) resulting from the thick gate oxide inspite of the lower gate leakage current and the higher on-state breakdown voltage. The results for a primitive p-HEMT having the gate oxide layer without any optimization of the structure and the process indicate the potential of p-HEMT having the gate oxide layer for high-power applications.

• E2M - 전기 전자와 첨단 소재
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• 제11권11호
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• pp.37-45
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• 1998

In this paper, present status of super high-efficiency tandem solar cells has been reviewed and key issues for realizing super high-efficiency have also been discussed. In addition, the terretrial R&D activities of tandem cells, in the New Sunshine Program of MITI(Ministry of International Trade and Industry) and NEDO(New Energy and Industrial Technology Development Organization) in Japan are reviewed briefly. The mechanical stacked 3-junction cells of monolithically grown InGaP/GaAs 2-junction cells and InGaAs cells have reached the highest efficiency achieved in Japan of 33.3% at 1-sun AM1.5. This paper also reports high-efficiency InGaP/GaAs 2-junction solar cells with a world-record efficiency of 26.9% at AM0, 28$^{\circ}C$ and radiation damage recovery phenomena of the tandem cell performance due to minority-carrier injection under light illumination or forward bias, which causes defect annealing in InGaP top cells. Future prospects for realizing super-high efficiency and low-cost tandem solar cells are also described.

• 한국축산식품학회지
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• 제34권6호
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• pp.808-814
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• 2014

This study investigated the effect of gum arabic (GA) combined with microbial transglutaminase (TG) on the functional properties of porcine myofibrillar protein (MP). As an indicator of functional property, heat-set gel and emulsion characteristics of MP treated with GA and/or TG were explored under varying NaCl concentrations (0.1-0.6 M). The GA improved thermal gelling ability of MP during thermal processing and after cooling, and concomitantly added TG assisted the formation of viscoelastic MP gel formation. Meanwhile, the addition of GA decreased cooking yield of MP gel at 0.6 M NaCl concentration, and the yield was further decreased by TG addition, mainly attributed by enhancement of protein-protein interactions. Emulsion characteristics indicated that GA had emulsifying ability and the addition of GA increased the emulsification activity index (EAI) of MP-stabilized emulsion. However, GA showed a negative effect on emulsion stability, particularly great drop in the emulsion stability index (ESI) was found in GA treatment at 0.6 M NaCl. Consequently, the results indicated that GA had a potential advantage to form a viscoelastic MP gel. For the practical aspect, the application of GA in meat processing had to be limited to the purposes of texture enhancer such as restructured products, but not low-salt products and emulsion-type meat products.

• 한국결정성장학회지
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• 제32권3호
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• pp.83-88
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• 2022

이종 기판과 GaN의 물성 차이로 인해 발생하는 결함을 제어하기 위한 다양한 방법 중 동종 물질을 완충층으로 사용하는 LT-GaN 방법을 사용하여 완충층과 성장 온도의 상관성을 자체 제작한 성장 장비를 통해 확인하고자 하였다. 성장 온도에 따라 표면에 형성된 LT-GaN 결정성에 변화가 있었으며, annealing 후 LT-GaN가 나타내는 결정성에 따라 epiGaN의 응력 완화 효과에 차이점이 있었다. 반면 LT-GaN의 높은 결정성은 다결정을 형성하는 원인으로 작용하여 그 위에 성장하는 epi-GaN의 결정질을 저해하는 결과를 유발하였다.

• 반도체디스플레이기술학회지
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• 제10권1호
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• pp.63-73
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• 2011

Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with conventional pseudomorphic HEMTs (PHEMTs). For the optimized device design and development, we have performed the calibration on the DC characteristics of our fabricated 0.1 ${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}$As heterostructure on the GaAs wafer using the hydrodynamic transport model of a commercial 2D ISE-DESSIS device simulator. The well-calibrated device simulation shows very good agreement with the DC characteristic of the 0.1 ${\mu}m$ ${\Gamma}$-gate MHEMT device. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.