• Korean Journal of Materials Research
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• v.9 no.1
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• pp.42-45
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• 1999

The room temperature optical transmission spectra of GaN /InGaN/GaN single quantum wells (SQW) and InGaN/GaN heterostructures grwon by low pressure metalorganic chemical vapor deposition have been measured. The dependence of the absorption edges of the GaN/InGaN/GaN SQW on the well width has been determined from the transmission spectra. The result shows that the absorption edge of GaN/InGaN/GaN SQW shifts towards lower energy as increasing the well width. The dependence of the absorption edges of the InGaN/GaN heterostructures on InN mole fraction has also been determined from the transmission spectra. The result is compared with calculated values obtained from Vegards's laws. Our result shows a good agreement with the calculated values.

• Laser Solutions
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• v.8 no.3
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• pp.5-10
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• 2005

[ $InxGa_{1-x}P/GaAs$ ] structures were grown by chemical beam epitaxy(CBE), Pure phosphine($PH_3$) gases were used as group V sources. for the group III sources, TEGa, TmIn were used. $InxGa_{1-x}P$ epilayer was grown on SI-GaAs substrate and has a 1-${\mu}m$ thick. We have investigated the characteristics of $InxGa_{1-x}P$ by the photoreflectance(PR) spectroscopy, The PR spectrum of $InxGa_{1-x}P$ shows third-derivative feature whose Peaks Provide energy gap. The energy gap of $InxGa_{1-x}P$ has deduced composition x. From temperature dependance of PR spectra, temperature coefficient is $dEg/dT=-3.773{\times}10^{-4}$ eV/K, and Varshni coefficients $\alpha$ and $\beta$ values obtained $4{\times}10^4$ eV/K and 267 K respectively. Also, interaction $\alpha$B was 19.4 meV using the Bose-Einstein temperature relation, and $\Theta$ value related the average phonon frequency were 101.4 K. In particular, shoulder peak related to defects observed in PR signal that measured in temperature 82 K.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.1
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• pp.13-20
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• 2021

GaN has shown good potential owing to its better chemical stability than other materials and tunable bandgap with materials such as InN and AlN. Tunable bandgap allows GaN to make the maximum utilization of the solar spectrum, thus improves the solar-to-hydrogen (STH) efficiency. In addition, GaN band gap contains the oxidation and reduction level of water, so it can split water without external voltage. However, STH efficiency using GaN itself is low and has been actively studied recently to improve it. In this thesis, we have summarized the studies related to the use of GaN as a photoelectrode for photoelectrochemical water splitting.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.3
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• pp.63-71
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• 1990

The hydrodynamic model parameters for the submicron GaAs simulation are calculated using the Monte Carlo method. $\Gamma$, L-, and X-valleys are included in the conduction band of GaAs, and polar optic phonon, acoustic phonon, equivalent intervalley, non-equivalent intervalley, ionized impurity, and piezoelectric scattering are taken into account. The velocity-electric field strength curve obtained in this paper is in good agreement with experimental one. We present the results in tabular form so that other participants can make use of them to simulate the submicron GaAs devices by the hydrodynamic model.

• Journal of the Korean Vacuum Society
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• v.11 no.2
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• pp.113-118
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• 2002

We developed engineering methods to control gas flow in a plasma reactor in order to achieve good etch depth uniformity for large area GaAs etching. Finite difference numerical method was found quite useful for simulation of gas flow distribution in the reactor for dry etching of GaAs. The experimental results in $BCl_3/N_2/SF_6/He$ ICP plasmas confirmed that the simulated data fitted very well with real data. It is noticed that a focus ring could help improve both gas flow and etch uniformity for 150 mm diameter GaAs plasma etch processing. The simulation results showed that optimization of clamp configuration could decrease gas flow uniformity as low as $\pm$ 1.5% on an 100 mm(4 inch) GaAs wafer and $\pm$ 3% for a 150 m(6 inch) wafer with the fixed reactor and electrode, respectively. Comparison between simulated gas flow uniformity and real etch depth distribution data concluded that control of gas flow distribution in the chamber would be significantly important in order or achieve excellent dry etch uniformity of large area GaAs wafers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.82-91
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• 1991

Molecular beam epitaxial growth of GaAs on Si substrate and the results on its analysis are reported. Epitaxy was performed on two different types of the substrate under various grwth conditions, and was analyzed by scanning and transmission electron microscopes, X-ray diffractometer, photoluminescence and Hall measurements. GaAs epitaxial layer has better crystalline quality when it was grown on a tilt-cut substrate. The stress seems to be releaxed more easily when multi-quantum well was introduced in the buffer layer. The epilayer was doped unintentionally with Si during growth due to the diffusion of the substrate. Also observed is that the quantum efficiency of excitonic radiative recombination of the heteroepitaxy is not as good as that of the homoepitaxy in the same doping level.

• 전자공학회논문지 IE
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• v.45 no.3
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• pp.1-4
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• 2008

We investigate magnetic semiconductor thin films for application towards spintronics, which can overcome current limitations in semiconductor devices. GaMnAs magnetic semiconducting films studied are easily integrated into conventional semiconductor processes and also offer a wide range of application, therefore it shows much promise as a future material. However the Curie temperature at which magnetic properties exist for GnMnAs is very low, also depending on deposition conditions the properties of the film can vary widely. In order to study these issues we investigate the best possible deposition conditions for magnetic properties.

• Proceedings of the Korean Vacuum Society Conference
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• 1994.02a
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• pp.136-136
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• 1994

• Journal of The Korean Digital Architecture Interior Association
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• v.13 no.4
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• pp.77-86
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• 2013

Uigwe is official reports of the Joseon dynasty. They published from early Joseon but remain from 17C. We can search many hidden informations in them. Ga-Jungjagak (temporary T-shaped house) is one of them. It is unique architecture of the Joseon dynasty but it doesn't exist now at all. We can see many drawings describing Ga-Jungjagak (temporary T-shaped house) located next to Jungjagak in Uigwe. Jungjagak (T-shaped house) was built in royal tombs for sacrifice. Ga-Jungjagak was built in royal tombs for sacrifice as Jungjagak but existed temporarily. In this study, I want to find the process of norms Ga-Jungjagak in old records, official reports and annals of the Joseon Dynasty. Results are as follows: Ga-Jungjagak is the sacrifice space for queens in royal tombs. It is need to avoid sacrifice of delight and sorrow at the same time. They sacrifice to represent sorrow after the death of kings and queens for three years. After three year, they sacrifice to represent delight for kings and queens became ancestral gods. Ga-Jungjagak was destroyed three years later to combined sacrifices. The shape of Ga-Jungjagak is similar to Jungjagak in the same tomb. But dimensions of Ga-Jungjagak are equal or smaller than Jungjagak and decorations are abstemious.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.79-91
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• 1998

Design principles for high-brightness ligh-temitting diodes have been derived by using escape cone concepts. Based on the design principles, some important high-brightness LED structures developed thus far have been reviewed and, in addition, their external coupling efficiencies have also been estimated. In AlGaAs or InGaAIP LEDs, in which photon absorption in the ohmic electrodes is known to be serious, photon shielding by the electrodes is minimized by using window layer (WL) as well as transparent substrate (TS) leading to significantly improved light-emitting efficiency. However, in InGaN LEDs emitting blue to green lights, the photon absorption in ohmic contact to wide bandgap GaN may be negligible and therefore, photon shielding by the electrodes would not lead to as significant problems as in conventional In AIGaAs or InGaAIP LEDs.