• Journal of the Korean Vacuum Society
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• v.4 no.3
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• pp.275-282
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• 1995

III족 원료 가스로 triethylgallium(TEGa)과 trimethylindium(TMIn)을 사용하고 V족 원료 가스로 사전 열 분해하지 않은 arsine(AsH3)과 monoethylarsine(MEAs)을 사용하여 ultrahigh vacuum chemical vapor deposition(UHVCVD)법으로 Si3N4로 패턴된 GaAs(100)기판 위에 GaAs와 InGaAsqkr막을 선택적으로 에피택시 성장을 하였다. V족 원료 가스를 사전 열 분해하지 않으므로 넓은 성장 온도 구간과 V/lll 비율에서도 선택적으로 박막이 성장되었다. 또한 선택 에피택시의 성장 메카니즘을 규명하기 위하여 다양한 filling factor(전체면적중 opening된 면적의 비율)를 가지는 기판을 제작하여 성장에 사용하였다. UHVCVD법에서는 마스크에 면적중 opening된 면적의 비율)를 가지는 기판을 제작하여 성장에 사용하였다. UHVCVD법에서는 마스크에 입사된 분자 상태의 원료 기체가 탈착된 후 표면 이동이나 가스 상태의 확산과정 없이 마스크로부터 제거되므로 패턴의 크기와 모양에 따른 성장 속도의 변화나 조성의 변화가 없을 뿐만 아니라 chemical beam epitaxy(CBE)/metalorganic molecular beam epitaxy(MOMBE)법에서 알려진 한계 성장온도 이하에서 선택 에피택시 성장이 이루어졌다.

• Korean Journal of Materials Research
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• v.3 no.6
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• pp.678-683
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• 1993

Atomic arral1gement of ordered phase in $GaAs_{0.5}Sb_{0.5}$ epilayer was studied by observation of selected area diffraction patterns and high resolution images. The epilayer was grown on untilted (001) GaAs substrate at $580^{\circ}C$ by molecular beam epitaxy(MBE). A 1/2(111) type long-range ordered phase is formed in the epilayer. Atomic arrangement of the ordered phase is described as an alternative stacking of As-rich and Sb-rich {111} planes in group V sublattice. Space group of the ordred structure belongs to R3m, and unit cell of the ordered structure is rhombohedral.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.12
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• pp.2025-2031
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• 1989

In this paper, using optical effect of characteristics of GaAs compound, two potential application of optical controlled GaAs MESFET are demonstrated` detector, microwave amplifier gain control. These lead to the possibility of the interaction with optical devices. The preliminary experiments show the light induced voltage, the increase in the drain currnet and the change in the microwave scattering parameters of GaAs MESFET under optical illumination(He-Ne laser). And imcrowave amplifier gain is round to be varied with changing in intensity of optical illumination.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.2
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• pp.165-170
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• 2015

In this paper, we present design and measurement of LNA(Low Noise Amplifier) based on GaN HEMT(Gallium Nitride High Electron Mobility Transistor) to reduce the total noise figure of radar receiver and for robustness of LNA. In radar receiver using LNA based on GaAs(Gallium Arsenide) technology, limiter is necessary at the very front of the radar receiver to protect LNA. As a result, total noise figure of radar receiver is deteriorated. In this research, measured noise figure of LNA based on GaN HEMT is below 2 dB. In the case of commercialized GaAs LNA, recommended maximum input power is about 30 dBm. On the other hand, GaN HEMT LNA which is designed and measured is burned-out when input power is 43 dBm and robustness is guaranteed at input power 45.4 dBm.

• Proceedings of the Optical Society of Korea Conference
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• 1997.08a
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• pp.67-67
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• 1997

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.155-159
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• 2003

This paper presents fully integrated 5 GHz band low phase noise LC tank VCO. The implemented VCO is tuned by integrated PN diode and tuning rage is $5.01{\sim}5.30$ GHz under $0{\sim}3 V$ control voltage. For good phase noise performance, LC filtering technique, common in Si CMOS process, is used, and to prevent degradation of phase noise performance by collector shot-noise and to reduce power dissipation the HBT is biased at low collector current density bias point. The measured phase noise is -87.8 dBc/Hz at 100 kHz offset frequency and -111.4 dBc/Hz at 1 MHz offset frequency which is good performance. Moreover phase noise is improved by roughly 5 dEc by LC filter. It is the first experimental result in InGaP/GaAs HBT process. The figure of merit of the fabricated VCO with LC filter is -172.1 dBc/Hz. It is the best result among 5 GHz InGaP HBT VCOs. Moreover this work shows lower DC power consumption, higher output power and more fixed output power compared with previous 4, 5 GHz band InGaP HBT VCOs.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.216-222
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• 2006

In this paper, we investigated the effect of hydrogen-plasma (H-plasma) treatment on the electrical and optical properties of a quantum dot infrared photodetector (QDIP) with a 5-stacked InAs dots in an InGaAs/GaAs well structure and $Al_{0.3}Ga_{0.7}As/GaAs$ SL (superlattice) current blocking layer. It has been observed that H-plasma treatment didn't affect the band structure of QDIP. It has been also observed that the H-plasma treatment on the QDIP not only enhance the electrical property of QDIP by curing the defect channels in $Al_{0.3}Ga_{0.7}As/GaAs$ SL but also introduce defects in QDIP structure. The H-plasma treatment for 10 min with 20 W of RF power provided the lowest dark current, which made it possible to measure the photo-current (PC) of QDIP whose PC was not detectable without the H-plasma treatment due to the high dark current.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.414-414
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• 2013

InGaAlAs/InP은 $1.3{\sim}1.55{\mu}m$ 레이저 다이오드 응용을 위한 InGaAsP/InP를 대체하기 위한 물질로 많은 관심을 받아왔다. 디지털 합금 InGaAlAs 다중양자우물(multiple quantum wells: MQWs) 시료는 MBE (molecular beam epitaxy) 장비를 이용하여 n-InP 기판 위에 성장하였다. 양자우물과 장벽은 각각 (InGaAs)0.8(InAlAs)0.2와 (InGaAs)0.4(InAlAs)0.6 SPSs (short-period superlattices)로 $510^{\circ}C$에서 성장하였다. 발광특성을 향상시키기 위하여 질소분위기에서 $700^{\circ}C$ $750^{\circ}C$ 또는 $800^{\circ}C$에서 30초간 열처리(rapid thermal annealing: RTA)하였다. RTA 온도에 따른 디지털 합금 InGaAlAs MQWs의 발광특성을 분석하기 위해 PL (photoluminescence)과 TRPL(time-resolved PL)을 이용하였다. RTA 온도에 따른 InGaAlAs MQWs 시료의 발광 메카니즘 및 운반자 동력학을 연구하기 위하여 발광파장 및 온도에 따른 TRPL을 측정하였다. 저온(10 K)에서 PL 피크는 RTA 온도를 $700^{\circ}C$에서 $750^{\circ}C$로 증가하였을 때 1,242 nm에서 1,245 nm로 장파장 영역으로 이동하였다가 $800^{\circ}C$에서 열처리하였을 때 단파장 영역으로 이동하여 1,239 nm에서 나타났다. 또한 PL 세기는 RTA 온도를 증가함에 따라 증가함을 보이다가 RTA 온도를 $800^{\circ}C$로 증가하였을 때 PL 세기는 감소하였다. 발광소자 개발을 위한 InAlGaAs MQWs 시료의 최적의 열처리 조건을 이러한 PL과 TRPL 결과로부터 결정할 수 있다.

• Journal of the Korean Vacuum Society
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• v.12 no.1
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• pp.20-24
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• 2003

We Performed the modeling of the dielectric functions of InGaAs by using the parametric semiconductor model. Parametric model describes the analytic dielectric function as the summation of several energy-bounded Gaussian-broadened polynomials and provides a reasonably well parameterized function which can accurately reproduce the optical constants of InGaAs materials. We obtained the values of fitting parameters of an arbitrary composition $\chi$ through the parametric model. And then, from these parameters we could obtain the unknown dielectric functions of InGaAs alloy films ($0\leq\chi\leq1$).

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.2
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• pp.94-101
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• 1989

Transport properties of 2DEG at AlGaAs/GaAs interface such as average electron energy, flight distance, each valley occupancy ratio, average electron velocity for various fields are investigated by MONTE-CARLO method. As the electric field increases, more electrons transit drastically from (000) valley to (000) upper valley. This phenomenon shows the nonstationary effect such as velocity overshoot. The duration of the transient decreases from about 1.4 psec for electric field E = 7KV/cm to about 0.7 psec for 12KV/cm. The average electron velocity during transient transport in 2DEG is about 8 times the steady-state velocity for E = 12KV/cm at room temperature. In comparison with bulk GaAs the peak velocity in the 2DEG is higher than that in even pure bulk GaAs at electric field E = 7 KV/cm. On the basis of the fact that the electrons in the 2DEG have larger peak velocity and shorter transient time of velocity than those in the bulk GaAs, it is suggested that the device with 2DEG may obtain higher mobility than that with bulk GaAs.