• Journal of the Korean Society for Precision Engineering
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• v.20 no.11
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• pp.117-126
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• 2003

GA(genetic algorithm) has a powerful searching ability and is comparatively easy to use and to apply as well. By that reason, GA is in the spotlight these days as an optimization skill for mechanical systems.$^1$However, GA has a low efficiency caused by a huge amount of repetitive computation and an inefficiency that GA meanders near the optimum. It also can be shown a phenomenon such as genetic drifting which converges to a wrong solution.$^{8}$ These defects are the reasons why GA is not widdy applied to real world problems. However, the low efficiency problem and the meandering problem of GA can be overcomed by introducing parallel computation$^{7}$ and gray code$^4$, respectively. Standard GA(SGA)$^{9}$ works fine on small to medium scale problems. However, SGA done not work well for large-scale problems. Large-scale problems with more than 500-bit of sere's have never been tested and published in papers. In the result of using the SGA, the powerful searching ability of SGA doesn't have no effect on optimizing the problem that has 96 design valuables and 1536 bits of gene's length. So it converges to a solution which is not considered as a global optimum. Therefore, this study proposes ExpGA(experience GA) which is a new genetic algorithm made by applying a new probability parameter called by the experience value. Furthermore, this study finds the solution throughout the whole field searching, with applying ExpGA which is a optimization technique for the structure having genetic drifting by the standard GA and not making a optimization close to the best fitted value. In addition to them, this study also makes a research about the possibility of GA as a optimization technique of large-scale design variable problems.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.21-27
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• 2000

We used the surface photovoltage spectroscopy(SPVS) for characterization of GaAs/Al\ulcornerGa\ulcornerAs multi-quantum well(MQW) structures grown by molecular beam epitaxy(MBE) method. Energy gap related transitions in GaAs and AlGaAs were observed. The Al composition(x=0.3) was determined by Sek's composition formula. Transition energies in MQW were determined using the differential surface photo-volatage spectroscopy)DSPVS) of the measured resonanced. In order to indentify the transitions, the experimentally observed energies were compared with results of the envelope function approximation for a rectangular quantum well. We have observed and interesting behavior of the temperature dependence(80K~300K) of the 11Hand 11L transition for sample.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.352-357
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• 2009

The InAs multi-quantum dots (MQDs) solar cell and InGaAs multi-quantum wells (MQWs) solar cell to cover 1.1 eV and 1.3 eV were designed by 1D poisson, respectively. The MQDs and MQWs of 5, 10, 15 layers were grown by molecular beam epitaxy. The photo luminescence results showed that the 5 period stacked MQDs have the highest intensity at around 1.1 eV with 57.6 meV full width at half maximum (FWHM). Also we can observe 10 period stacked MQWs peak position which has highest intensity at 1.31 eV with 12.37 meV FWHM. The density and size of QDs were observed by reflection high energy electron diffraction pattern and atomic force microscope. Futhermore, AlGaAs/GaAs sandwiched tunnel junctions were modified according to the width of GaAs layer on p-type GaAs substrates. The structures with GaAs width of 30 nm and 50 nm have backward diode characteristics. In contrast, tunnel diode characteristics were observed in the 20 nm of that of sample.

• Korean Journal of Materials Research
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• v.6 no.1
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• pp.84-89
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• 1996

분자선 증착법(Molecular Beam Epitaxy)에 의하여 성장시킨 고농도 InGaAs layer에서 성장중지법이 계면 거칠기에 미치는 영향이 연구되었다. 계면을 평활화하기 위하여 단원자층의 GaAs 또는 AIAs를 InGaAs alyer 양쪽 계면에 증착한 뒤 뒤이어 성장중지를 실시하였다. Photoluminescence(PL) 측정에 의하면, 단원자 GaAs층 증착을 통한 평활화법보다 상당히 향상된 계면조건을 보여졌다. 고 분해능 단면 전자현미경법(Cross-section high resolution transmission electron microscopy, XHRTEM)에 의해 관찰되어진바, 계면 평활화법에 의해 계면의 평활성, 연속성 및 결정결함 밀도등에서 현저한 향상이 얻어졌다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1010-1014
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• 2004

High quality GaN layer and $In_xGa_{1-x}N$ alloy were obtained on (0001)sapphire substrate using ammonia$(NH_3)$ and dimethylhydrazine$(DMH_y)$ as a nitrogen source by gas source molecular hem epitaxy(GSMBE) respectively. As a result, RHEED is used to investigate the relaxation processes which take place during the growth of GaN and $In_xGa_{1-x}N$. The full Width at half maximum of the x-ray diffraction(FWHM) rocking curve measured from Plane of GaN has exhibitted as narrow as 8 arcmin. Photoluminescence measurement of GaN and $In_xGa_{1-x}N$ were investigated at room temperature, where the intensity of the band edge emission is much stronger than that of deep level emission. In content of $In_xGa_{1-x}N$ epitaxial layer according to growth condition was investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.77-78
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• 2006

We fabricated photonic crystals on GaAs and GaN substrates. After anodizing the aluminium thin film in electrochemical embient, the porous alumina was implemented to the mask for reactive ion beam etching process of GaAs wafer. And photonic crystals in GaN wafer were also fabricated using electron beam nano-lithography process. The coated PMMA thin film with 200 nm-thickness on GaN surface was patterned with triangular lattice and etched out the GaN surface by the inductively coupled plasma source. The fabricated GaAs and GaN photonic crystals provide the enhanced intensities of light emission for the wavelengths of 858 and 450 nm, respectively. We will present the detailed dimensions of photonic crystals from SEM and AFM measurements.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.297-297
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• 2011

일반적으로 고출력 반도체 레이저 다이오드는 발진 파장 및 광출력에 따라 다양한 분야에 응용되고 있으며, 특히 발진파장이 808 nm 대역인 고출력 레이저 다이오드의 경우 재료가공, 펌핌용 광원, 의료 분야 등 다양한 응용분야를 가진 광원 중의 하나라고 할 수 있다. 808 nm 대역의 레이저 다이오드 제작에는 현재 InGaAsP/InGaP/GaAs 및 InGaAlAs/GaAs 양자우물을 이용하여 제작되고 있으나 양자우물과 이를 둘러싸는 장벽물질간의 band-offset이 적어 효율적인 고출력 레이저 다이오드의 제작에 다소 어려움이 있기 때문에 강한 캐리어 구속 효과를 지니는 양자점 혹은 양자대쉬 구조를 사용하는 것이 고출력 레이저 다이오드를 제작할 수 있는 한 방법이다. 실험에 사용된 InP/InGaP 양자구조는 Riber사의 compact21 MBE 장치를 사용하여 성장하였으며 GaAs기판을 620-630도에서 가열하여 표면의 산화층을 제거하고 580도에서 약 100 nm 두께의 GaAs 버퍼층 및 50 nm 두께의 InGaP층을 성장하였다. 양자 구조는 MEE (migration enhanced epitaxy) 방식으로 성장되었는데, 이는 InP/InGaP 의 lattice mismatch율이 작아 양자 구조 형성이 어렵기 때문에 InP/InGaP 양자 구조 성장에 적합하다고 생각하였으며, Indium 2초, growth interuption time 10초, phosphorous 2초 그리고 growth interuption time 10초를 하나의 시퀀스로 보고, 그 시퀀스를 반복하여 양자 구조를 성장하였다. 본 실험에 사용된 P 소스는 Riber사의 KPC-250 P-valved cracker모델을 사용하였으며 InP의 성장률은 0.985${\AA}/s$이다. InP/InGaP 양자구조 성장 중에, 성장 온도, 시퀀스 수의 변화 등 다양한 조건을 변화 시켜 샘플을 성장시켰고, 양자 구조 성장을 확인하기 위하여 AFM 및 SEM을 통해 구조적 분석을 하였으며 PL 측정을 통해 광학적 분석을 진행하였다.

• Transactions on Electrical and Electronic Materials
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• v.8 no.3
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• pp.115-120
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• 2007

Reliability between passivated and unpassivated process with the base-exposed InGaP/GaAs HBTs was studied. A passivation of HBT was attempted by $SiO_2$ thin film deposition at $300^{\circ}C$ by means of PECVD. Base-exposed InGaP/GaAs HBTs before and after passivation were investigated and compared in terms of DC and RF performance. Over a total period of 30 days, passivated HBTs show only 2% degradation of DC current gain for the high current density of $40KA/cm^2$. The measured thermal resistance of $2{\times}30{\mu}m^2$ single emitter InGaP/GaAs HBT passivated with PECVD $SiO_2$ devices can be extracted and was founded to be 1430 K/W. The estimated MTTF was $2{\times}10^7hr\;at\;T_j=125^{\circ}C$ with an activation energy $(E_a)$ of 1.37 eV.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.206-212
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• 1996

$In_{1-x}Ga_xAs$ epitaxial layers were grown at 76 Torr by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Growth rate did not change much with growth temperature. Surface morphology of $In_{1-x}Ga_xAs$ epitaxial layer was affected by lattice mismatch, growth temperature and $AsH_3/(TMIn+TMGa)$ ratio. A high quality epilayer showed a full width at half maximum of 2.8 meV by photoluminescence measurement at 5K. The composition of the $In_{1-x}Ga_xAs$ was determined by the relative gas phase diffusion of TMIn and TMGa. Lattice mismatch and growth temperature were the most important variables that determine the electrical properties of $In_{1-x}Ga_xAs$ epitaxial layers. At optimized growth condition, it was possible to obtain a high quality $In_{1-x}Ga_xAs$ epilayers with a electron concentration as low as $8{\times}10^{14}/cm^3$ and an electron mobility as high as 11,000$\textrm{cm}^2$/Vsec at room temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.6
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• pp.225-231
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• 2016

The valence band maximum (VBM) and conduction band minimum (CBM) of Al-doped GaInAsSb alloys substrated on GaSb are calculated by using an analytic approximation based on the tight binding method. The relative positions of the VBM and CBM between Al-GaInASSb and GaSb determine band alignement type, valence band offset (VBO) and conductin band offset (CBO) for the heterojunctions. In this study, aluminium doping is assumed to be substituted in the cation site and limited up to 20 % because it can easily oxidize and degrade materials. It is found that the Al-doped alloys exhibit type-II band alignments over the entire composition range and make the band gaps increase, whereas the VBO and CBO decrease. The decreasing rate of VBO is higher than that of CBO, which implies the Al components play a decisive role in controlling electrons at the interface. The Al-dopled GaInAsSb alloy has a direct band gap induced by $E({\Gamma})$ with a considerable distance from the E(L) and E(X), however, $E({\Gamma})$ approaches to E(L) and E(X) in the high Sb concentration (Sb > 0.7-0.8) which might affect the electron mobility and degrade the optical quality.