• Physical Therapy Korea
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• v.10 no.2
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• pp.61-70
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• 2003

The purposes of this study was to evaluate the effect of low power GaAsAl laser on tissue contraction in a linear incision wound on rat skin. The linear incision wound was made on the midline of the backside in the experimental animals. Low power laser applications with different intensities such as 3, 6, or 10 mW were applied to the experimental animals twice a day for 10 days. On either the seventh or tenth postoperative day, the quantitative analysis of the inflammatory reaction surrounding the linear incision wounds on the rats were performed using enzymatical analysis of myeloperoxidase (MPO) activity. The number of neutrophil was $.07-1.0{\times}106/m{\ell}$ from a normal blood sample that was obtained from the normal experimental animals. Each concentration of neutrophil showed .04-.62 unit activity of MPO. Therefore, the 6 unit activity of MPO per neutrophil was $.57{\pm}.014{\times}10^{-6}$ unit. On the 7th and 10th post operative day, non treated tissues demonstrated increased MPO activity as compared to that of normal tissue. These data indicated that the inflammatory reaction of tissue was induced after wound induction and the MPO activity were increased in the inflammed tissues. While both 3 mW or 6 mW intensity of laser treatments did not affect the tissue MPO activity, 10 mW intensity of laser treatment significantly decreased the tissue MPO activity on the 7th and 10th post operative day. These data demonstrated that only 10 mW intensity of laser treatment successfully suppressed tissue inflammatory reaction after wound induction. In conclusion, these findings suggested that 10 mW of GaAIAs laser treatments effectively suppressed the inflammatory reaction of tissue that was induced during the wound healing process.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.1
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• pp.59-69
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• 2002

A semi-analytical model based on exact numerical analysis of the 2DEG channel in pseudo-morphic HEMT (PMHEMT) is presented. The exactness of the model stems from solving both Schrodinger's wave equation and Poisson's equation simultaneously and self-consistently. The analytical modeling of the device terminal characteristics in relation to the charge control model has allowed a best fit with the geometrical and structural parameters of the device. The numerically obtained data for the charge control of the channel are best fitted to analytical expressions which render the problem analytical. The obtained good agreement between experimental and modeled current/voltage characteristics and small signal parameters has confirmed the validity of the model over a wide range of biasing voltages. The model has been used to compare both the performance and characteristics of a PMHEMT with a competetive HEMT. The comparison between the two devices has been made in terms of 2DEG density, transfer characteristics, transconductance, gate capacitance and unity current gain cut-off frequency. The results show that PMHEMT outperforms the conventional HEMT in all considered parameters.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.581-588
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• 2013

This paper presents a study of the process temperature dependence of $Al_2O_3$ film grown by thermal atomic layer deposition (ALD) as a passivation layer in the crystalline Si (c-Si) solar cells. The deposition rate of $Al_2O_3$ film maintained almost the same until $250^{\circ}C$, but decreased from $300^{\circ}C$. $Al_2O_3$ film deposited at $250^{\circ}C$ was found to have the highest negative fixed oxide charge density ($Q_f$) due to its O-rich condition and low hydroxyl group (-OH) density. After post-metallization annealing (PMA), $Al_2O_3$ film deposited at $250^{\circ}C$ had the lowest slow and fast interface trap density. Actually, $Al_2O_3$ film deposited at $250^{\circ}C$ showed the best passivation effects, that is, the highest excess carrier lifetime (${\tau}_{PCD}$) and lowest surface recombination velocity ($S_{eff}$) than other conditions. Therefore, $Al_2O_3$ film deposited at $250^{\circ}C$ exhibited excellent chemical and field-effect passivation properties for p-type c-Si solar cells.

• Journal of Korea Water Resources Association
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• v.34 no.5
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• pp.473-486
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• 2001

The WGR model was developed to represent meso-scale precipitation. As a conceptual model, this model shows a good link between atmospheric dynamics and statistical description of meso-scale precipitation(Waymire et al., 1984). However, as it has maximum 18 parameters along with its non-linear structure, its parameter estimation has been remained a difficult problem. There have been several cases of its parameter estimation for different fields using non-linear programming techniques(NLP), which were also difficult tasks to hamper its wide applications. In this study, we estimated the WGR model parameters of the Han river basin using the genetic algorithm(GA) and compared them to the NLP results(Yoo and Kwon, 2000). As a result of the study, we can find that the sum of square error from the GA provide more consistent parameters to the seasonal variation of rainfall. Also, we can find that the higher rainfall amount during summer season is closely related with the arrival rate of rain bands, not the rain cell intensity.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.3
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• pp.182-189
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• 2011

In this work, a tunneling field-effect transistor (TFET) based on heterojunctions of compound and Group IV semiconductors is introduced and simulated. TFETs based on either silicon or compound semiconductors have been intensively researched due to their merits of robustness against short channel effects (SCEs) and excellent subthreshold swing (SS) characteristics. However, silicon TFETs have the drawback of low on-current and compound ones are difficult to integrate with silicon CMOS circuits. In order to combine the high tunneling efficiency of narrow bandgap material TFETs and the high mobility of III-V TFETs, a Type-I heterojunction tunneling field-effect transistor (I-HTFET) adopting $Ge-Al_xGa_{1-x}As-Ge$ system has been optimized by simulation in terms of aluminum (Al) composition. To maximize device performance, we considered a nanowire structure, and it was shown that high performance (HP) logic technology can be achieved by the proposed device. The optimum Al composition turned out to be around 20% (x=0.2).

• Computers and Concrete
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• v.6 no.4
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• pp.343-356
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• 2009

Experiments were designed to investigate the flow behavior of portland cement paste and concrete incorporating superplasticizers. The paste and concrete mixtures were subjected to prolonged mixing for up to 110 min at high temperature. The yield stress values of concrete and that of the corresponding cement paste were measured using a rotating rheometer and viscometer, respectively. The results reveal a weak linear correlation between the yield stress of concrete mixtures and that of the corresponding cement pastes. Results also indicate that the yield stress of concrete varies in a linear fashion with the elapsed time, while its variations with the temperature and superplasticizer dosage follow power and inverse power functions, respectively. In this study, the genetic algorithms (GA) technique was used to predict the yield stress of concrete considering various parameters, such as the mixing time, ambient temperature, and superplasticizer dosage. A sensitivity study was conducted to evaluate the ability of the GA equations thus developed to capture the effects of test parameters on the yield stress of concrete. It was found that the GA equations were sensitive to the effects of test parameters and provided yield stress predictions that compared well with corresponding experimental data.

• Journal of Radiation Industry
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• v.5 no.2
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• pp.101-106
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• 2011

The separation of germanium and gallium ion with metal oxide was introduced into the development of $^{68}Ge/^{68}Ga$ generator. Germanium and gallium within mixed solution were respectively separated by using a liquid-liquid extraction and a column chromatographic method. The separation of Ge within high concentrated hydrochloric and sulfuric acid was conducted by the extraction to $CCl_4$ and the back-extraction to 0.05 M HCl. An optimum condition of the extraction by $CCl_4$ was in 5~7 M HCl and efficiency was around 80%. The gallium was selectively separated by using $Al_2O_3$ among metal oxides as sorbents from the mixed solution in 0.04~0.10 M HCl condition.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.11
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• pp.1183-1189
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• 2012

Organic light-emitting diodes (OLEDs) using microcavity effect have attracted great attention because they can reduce the width of emission spectra from organic materials, and enhance brightness from the same material. We demonstrate the simulation results of the radiation properties from top-emitting organic light-emitting diodes (TE-OLEDs) with microcavity structures based on the general electromagnetic theory. Organic materials such as N,N'-di (naphthalene-1-yl)-N,N'-diphenylbenzidine (NPB) as a hole transport layer and tris (8-hydroxyquinoline) ($Alq_3$) as emitting and electron transporting layer are used to form the OLEDs. The organic materials were sandwiched between anode such as Ni or Au and cathode such as Al, Ag, or Al:Ag. The devices were characterized with electroluminescence phenomenon. We confirmed that the simulation results are consistent with experimental results.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.135-135
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• 2010

In Mn-Ge equilibrium phase diagram, many Mn-Ge intermetallic phases can be formed with difference structures and magnetic properties. The MnGe has the cubic structure and antiferromagnetic(AFM) with Neel temperature of 197 K. The calculation predicted that the $MnGe_2$ with $Al_2Cu$-type is hard to separate between the paramagnetic(PM) states and the AFM states because this compound displays PM and AFM configuration swith similar energy. Mn-doped Ge showed the FM with Currie temperature of 285 K for bulk samples and 116 K for thin films. In addition, the $Mn_5Ge_3$ compound has hexagonal structure and FM with Curie temperature around 296K. The $Mn_{11}Ge_8$ compound has the orthorhombic structure and Tc is low at 274 K and spin flopping transition is near to 140 K. While the bulk $Mn_3Ge_2$ exhibited tetragonal structure ($a=5.745{\AA}$;$c=13.89{\AA}$) with the FM near to 300K and AFM below 150K. However, amorphous $Mn_3Ge_2$ ($a-Mn_3Ge_2$) was reported to show spin glass behavior with spin-glass transition temperature (Tg) of 53 K. In addition, the transition of crystalline $Mn_3Ge_2$ shifts under high pressure. At the atmospheric pressure, $Mn_3Ge_2$ undergoes the magnetic phase transition from AFM to FM at 158 K. The pressure dependence of the phase transition in $Mn_3Ge_2$ has been determined up to 1 GPa. The transition was found to occur at 1 GPa and 155 K with dT/dP=-0.3K/0.1 GPa. Here report that Ferromagnetic $Mn_3Ge_2$ thin films were successfully grown on GaAs(001) and GaSb(001) substrates using molecular beam epitaxy. Our result revealed that the substrate facilitates to modify magnetic and electrical properties due to tensile/compressive strain effect. The spin-flopping transition around 145 K remained for samples grown on GaSb(001) while it completely disappeared for samples grown on GaAs(001). The antiferromagnetism below 145K changed to ferromagnetism and remained upto 327K. The saturation magnetization was found to be 1.32 and $0.23\;{\mu}B/Mn$ at 5 K for samples grown on GaAs(001) and GaSb(001), respectively.

• Journal of Korea Water Resources Association
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• v.40 no.10
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• pp.811-821
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• 2007

The intensity-duration-frequency (IDF) curves by Talbot, Sherman and Japanese type formulas are widely used in South Korea since the parameters are easily estimated. However, these IDF curves' accuracies are relatively worse than those of the IDF curves developed by Lee et al. (1993) and Heo et al. (1999), and different parameters for the given return periods should be computed. In this study, parameter estimation method for the IDF curve by Heo et al. (1999) is suggested using genetic algorithm (GA). Quantiles computed by at-site frequency analysis using the rainfall data of 22 rainfall gauges operated by Korea Meteorological Administration are employed to estimate the parameters of IDF curves and minimizing root mean squared error (RMSE) and relative RMSE (RRMSE) of observed and computed quantiles are used as objective functions of GA. The comparison of parameter estimation methods between the empirical regression analysis and the suggested method show that the IDF curve in which the parameters are estimated by GA using RRMSE as an objective function is superior to the IDF curves using RMSE.