• Title/Summary/Keyword: In2S3 thin film

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Oxidation and Neutral Electrolytic Pickling Behavior of 304 and 430 Stainless Steels (304 및 430 스테인레스 강판의 산화 및 중성염 전해산세 거동)

  • Kim T. S.;Park Y. T.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2004.08a
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    • pp.285-293
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    • 2004
  • Oxidation behavior of 304 and 430 stainless steel were studied using thin film X-ray analysis and glow discharge spectrum analysis (here-after GDS). The oxidation layer of 304 stainless steel was composed of $Cr_2O_3\;and\;FeCrO_4$ and its thickness was about $1.5{\mu}m$ after $1\~5$ minutes of annealing at $1120^{\circ}C$ open air. However, the oxidation layer of 430 stainless steels was mainly composed of $Cr_2O_3$ and its typical thickness was 0.5um after $1\~5$ minutes of annealing at $1000^{\circ}C$ open air. Electro-chemical analysis revealed that the descaling of oxidation layer could be activated by Fe, Cr dissolution from the matrix behind the oxidation layer at the current density of $5\~10ASD$ and by Fe, Cr-oxide dissolution from the oxidation layer at the current density over than 10ASD. Electrolytic stripping of 430 and 304 revealed the intial incubation period of descaling by oxygen evolving at low current density range such as $5\~10ASD$. However the dissolution of oxide layer was occurred when applying the anodic current of $10\~20ASD$ on 430 and 304 stainless steels. It was suggested that the electrolytic pickling of high Cr bearing stainless steel such as 430 and 304 seemed to be the more effective in the high current density range such as $10\~20ASD$ than the low current density range such as $5\~10ASD$.

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A Study on Deposition of Tungsten Nitride Thin Film for X-ray mask(l) (X-ray 마스크용 $WN_x$ 박막 증착에 관한 연구(l))

  • Jang, Cheol-Min;Choi, Byung-Ho
    • Korean Journal of Materials Research
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    • v.8 no.2
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    • pp.147-153
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    • 1998
  • Tungsten nitride is very attractive as absorber for X-ray lithographic mask and as a diffusion barrier for interconnecting metallization in Si VLSI technology. Microstructure of tungsten nitride films prepared by RF magnetron sputtering has been investigated as a function of deposition parameter. The crystal structure of sputtered films on silicon nitride membrane depends strongly on the NJAr gas flow ratio(0~18%1, gas pressure(l0~43mTorr). RF power (60~150W), target-substrate distance(4~8cm). Tungsten nitride films deposited at the $N_2/Ar$ gas flow ratio(- 10%). gas pressure(~10mmTorr), RF power(~150W) and target-substrate distance(6cm) are amorphous, but at other conditions are almost rough -surfaced polycrystalline. Amorphous films are very smooth($3.1\AA$ rms) and expected to be excellent absorber for X-ray mask.

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Poly(p-phenylenevinylene)s Derivatives Containing a New Electron-Withdrawing CF3F4Phenyl Group for LEDs

  • Jin, Young-Eup;Kang, Jeung-Hee;Song, Su-Hee;Park, Sung-Heum;Moon, Ji-Hyun;Woo, Han-Young;Lee, Kwang-Hee;Suh, Hong-Suk
    • Bulletin of the Korean Chemical Society
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    • v.29 no.1
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    • pp.139-147
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    • 2008
  • New PPV derivatives which contain electron-withdrawing CF3F4phenyl group, poly[2-(2-ethylhexyloxy)-5-(2,3,5,6-tetrafluoro-4-trifluoromethylphenyl)-1,4-phenylenevinylene] (CF3F4P-PPV), and poly[2-(4-(2-etylhexyloxy)-phenyl)-5-(2,3,5,6-tetrafluoro-4-trifluoromethylphenyl)-1,4-phenylenevinylene] (P-CF3F4P-PPV), have been synthesized by GILCH polymerization. As the result of the introduction of the electron-withdrawing CF3F4phenyl group to the phenyl backbone, the LUMO and HOMO energy levels of CF3F4P-PPV (3.14, 5.50 eV) and P-CF3F4P-PPV (3.07, 5.60 eV) were reduced. The PL emission spectra in solid thin film are more red-shifted over 50 nm and increased fwhm (full width at half maximum) than solution conditions by raising aggregation among polymer backbone due to electron withdrawing effect of 2,3,5,6-tetrafluoro-4-trifluoromethylphenyl group. The EL emission maxima of CF3F4P-PPV and P-CF3F4P-PPV appear at around 530-543 nm. The current density-voltage-luminescence (J-V-L) characteristics of ITO/PEDOT/polymer/Al devices of CF3F4P-PPV and P-CF3F4P-PPV show that turn-on voltages are around 12.5 and 7.0 V, and the maximum brightness are about 82 and 598 cd/m2, respectively. The maximum EL efficiency of P-CF3F4P-PPV (0.51 cd/A) was higher than that of CF3F4P-PPV (0.025 cd/A).

Evaluation of Contrast-detail Characteristics of an A-Se Based Digital X-ray Imaging System (A-Se 기반 디지털 X-선 영상장치의 Contrast-detail 특성 평가)

  • Hyun, Hye-Kyung;Park, So-Hyun;Kim, Keun-Young;Cho, Hee-Moon;Cho, Hyo-Sung
    • Journal of the Korean Society of Radiology
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    • v.1 no.1
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    • pp.11-16
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    • 2007
  • In this study, we have performed contrast-detail analysis for an amorphous selenium(a-Se) based digital X-ray imaging system by using a contrast-detail phantom(CDRAD 2.0) to test its low contrast performance. The X-ray imaging system utilizes an 500-mm-thick a-Se semiconductor X-ray absorber coated over an amorphous silicon(a-Si) TFT(thin-film transistor) detector matrix with a $139mm{\times}139mm$ pixel size and a $46.7cm{\times}46.7cm$ active area. In the measurement of contrast-detail curves we first acquired X-ray images of the CDRAD 2.0 phantom at given test conditions(i.e., 40, 50, 60, 70, 80 kVp, and 16 mA.s), and then evaluated the contrast-detail characteristics of the imaging system from each phantom image by using an image quality factor called the image-quality-figure-inverse(IQFinv). The IQFinv values for the imaging system gradually improved with the photon fluence, indicating the improvement of image visibility: 24.4, 35.3, 39.2, 41.5, and 43.4 at photon fluences of $1.8{\times}105$, $5.9{\times}105$, $11.3{\times}105$, $19.4{\times}105$, and $29.4{\times}105$ photons/$mm^2$, respectively.

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Electrical and Chemical Properties of ultra thin RT-MOCVD Deposited Ti-doped $Ta_2O_5$

  • Lee, S. J.;H. F. Luan;A. Mao;T. S. Jeon;Lee, C. h.;Y. Senzaki;D. Roberts;D. L. Kwong
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.1 no.4
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    • pp.202-208
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    • 2001
  • In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

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Growth and Opto-electric Characterization of ZnSe Thin Film by Chemical Bath Deposition (CBD(Chemical Bath Deposition)방법에 의한 ZnSe 박막성장과 광전기적 특성)

  • Hong, K.J.;You, S.H.
    • Journal of Sensor Science and Technology
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    • v.10 no.1
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    • pp.62-70
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    • 2001
  • The ZnSe sample grown by chemical bath deposition (CBD) method were annealed in Ar gas at $45^{\circ}C$. Using extrapolation method of X-ray diffraction pattern, it was found to have zinc blend structure whose lattice parameter $a_o$ was $5.6687\;{\AA}$. From Hall effect, the mobility was likely to be decreased by impurity scattering at temperature range from 10 K to 150 K and by lattice scattering at temperature range from 150 K to 293 K. The band gap given by the transmission edge changed from $2.700{\underline{5}}\;eV$ at 293 K to $2.873{\underline{9}}\;eV$ at 10 K. Comparing photocurrent peak position with transmission edge, we could find that photocurrent peaks due to excition electrons from valence band, ${\Gamma}_8$ and ${\Gamma}_7$ and to conduction band ${\Gamma}_6$ were observed at photocurrent spectrum. From the photocurrent spectra by illumination of polarized light on the ZnSe thin film, we have found that values of spin orbit coupling splitting ${\Delta}so$ is $0.098{\underline{1}}\;eV$. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be $0.061{\underline{2}}\;eV$ and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be $0.017{\underline{2}}\;eV$, $0.031{\underline{0}}\;eV$, respectively.

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Electronic Structure and Elemental Composition of the Lead Sulfide Colloidal Quantum Dots Depending on the Types of Ligand and Post-Treatment (리간드 종류와 후처리 공정에 따른 황화납 콜로이드 양자점 박막의 전자 구조 및 원소 조성 분석)

  • Kim, Tae Gun;Choi, Hyekyoung;Jeong, Sohee;Kim, Jeong Won
    • Journal of the Korean Chemical Society
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    • v.60 no.6
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    • pp.402-409
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    • 2016
  • Thin films of lead sulfide colloidal quantum dots (CQDs) of 2.8 nm in diameter are fabricated and their surfaces are passivated by 3-mercaptopropionic acid (MPA) ligand or hybrid type ($MPA+CdCl_2$) ligand, respectively. The changes in valence band electronic structure and atomic composition of each PbS CQD film upon post-treatment such as air, N2 annealing or UV/Ozone have been studied by photoelectron spectroscopy. The air annealing makes the CQD fermi level to move toward the valence band leading to "p-type doping" regardless of ligand type. The UV/Ozone post-treatment generates $Pb(OH)_2$, $PbSO_x$ and PbO on both CQD surfaces. But the amount of the PbO has been reduced in hybrid type ligand case, especially. That is probably because the extra Pb cations in (111) surface are additionally passivated by $Cl_2$ ligand, which limits the reaction between the Pb cation and ozone.

Killing Effects of $UV-TiO_2$ Photocatalytic System on Microorganisms ($UV-TiO_2$ 광촉매 반응기에 의한 미생물의 살균효과)

  • 김중곤;신용국;이영상;김용호;김시욱
    • Korean Journal of Microbiology
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    • v.37 no.2
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    • pp.130-136
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    • 2001
  • The killing effects of two types(one-phase reactor and two-phase reactor) of UV-TiO$_2$photocatalytic system on the microorganisms have been studied. The UV-lamp which emits maximum 39 watts at 254 nm was prepared in these system. Three types of $TiO_2$ coating method were adopted. One type is thin film coated form on the quartz tube in the reactor and another one is surface rough coated form on the glass bead. The other one is $TiO_2$-mixed alginate bead form. UV irradiation was carried out for 1 min. In case of one phase reactor, the bactericidal efficiencies of E. coli by $TiO_2$-coated quartz tube and $TiO_2$-coated glass bead were 63.2% and 89.9%, respectively. In the air-bubbling system, the bactericidal efficiency was 95%, however, the efficiency decreased to 90.6% in the non-bubbling system. In the $TiO_2$-mixed alginate bead system, bactericidal efficiency was 86%. When $H_2O$$_2$ was treated (10, 15, 20, and 25 mg/ι) to the $TiO_2$-coated glass bead reactor, bactericidal efficiency significantly increased according to the concentration of $H_2$$O_2$. Two phase reactor showed more elevated efficiency. E. coli was more sensitive to the reaction than S. cerevisiae.

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Postharvest Handling and Marketing Management for Making High Salability of Sweetpotatoes (상품성 제고를 위한 고구마 수확 후 관리 및 출하기술)

  • Jeong, Byeong-Choon
    • Proceedings of the Korean Society of Postharvest Science and Technology of Agricultural Products Conference
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    • 2001.06a
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    • pp.51-64
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    • 2001
  • The qualities including taste of sweetpotato stored during the winter which can display in the spring market in Korea are affected by availability of storage for the roots. In order to make high storage availability of sweetpotato, the postharvest handlings should be done thoroughly from the moment of harvest until shipping them to the market. A lot of procedures that must be handled carefully for improving postharvest management are as follows; digging, trimming, gathering, putting in storage containers, carrying them from field to house, curing, storing, washing, drying, selecting marketable roots, packing and shipping to the market, etc.. Sweetpotatoes have a high moisture content, and a relatively thin and delicate skin, and are sensitive to chilling, so careless postharvest handling can lead to both quantitative and qualitative losses which may be extremely high in some circumstances. From now on research has concentrated on the improvement of postharvest conditions to increase yield and lower disease rates. Storage, which makes sweetpotatoes available through out the year, benefits both the producer and the consumer. Seven very important points must be needed in order to get the best quality marketable roots in the storing of sweetpotatos : $\circled1$The storage house must be clean and sanitary, $\circled2$The crop must be harvested before the first frost to avoid low-temperature injury, $\circled3$Particular care must be taken to avoid cutting, bruising, or other injuries of the sweetpotatoes during digging, picking up, grading, placing in containers, and moving to the storage house, $\circled4$Select sound, disease-free roots for storage $\circled5$Sweetpotatoes should be stored in properly stacked containers $\circled6$Cure immediately after harvest, preferably at 32∼33$^{\circ}C$ and 90 to 95 percent relative humidity for 4 to 7 days, After curing the temperature should be reduced to 13$^{\circ}C$ to 16$^{\circ}C$ by ventilating the storage with outside air. $\circled7$Store at 12$^{\circ}C$ to 14$^{\circ}C$ and a relative humidity of 80 to 85 percent. Storage houses should be located on suitable sites and should be tightly constructed and insulated so that temperature and humidity will be uniform. Sweetpotatoes are usually not washed and graded, and lately sometimes washed, graded, waxed, before being shipped to market. Consumer packaging of sweetpotatoes in paper boxes(10-15kg) or film bags is done mainly to aid marketing. The shelf life of washed roots in consumer packs in only 1 to 2 weeks. Weight loss of roots during marketing is much less in perforated film bags than in mesh and paper bags. Perforation of 0.8 to 1kg polyethylene bags with about six 6mm holes is essential ; to lower the internal relative humidity and avoid excessive sprouting, rooting, and dampness. Development and use of better postharvest handling with good storage facilities or marketing methods can minimize sweetpotate losses and has an effect of indirectly increasing productivity and farmer’s income.

Image Transfer Using Cellular Phones and Wireless Internet Service

  • Shin, Dong-Ah;Doo, Tae-Hoon;Kim, Hyo-Jun;Kim, Hyoung-Ihl
    • Journal of Korean Neurosurgical Society
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    • v.39 no.6
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    • pp.471-474
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    • 2006
  • Objective : Neuroimaging data are of paramount importance in making correct diagnosis. We herein evaluate the clinical usefulness of image transfer using cellular phones to facilitate neurological diagnosis and decision-making. Methods : Selected images from CT, MRI scans, and plain films obtained from 50 neurosurgical patients were transferred by cellular phones. A cellular phone with a built-in 1,300,000-pixel digital camera was used to capture and send the images. A cellular phone with a 262,000 color thin-film transistor liquid crystal display was used to receive the images. Communication between both cellular phones was operated by the same wireless protocol and the same wireless internet service. We compared the concordance of diagnoses and treatment plans between a house staff who could review full-scale original films and a consultant who could only review transferred images. These finding were later analyzed by a third observer. Results : The mean time of complete transfer was $2{\sim}3\;minutes$. The quality of all images received was good enough to make precise diagnosis and to select treatment options. Transferred images were helpful in making correct diagnosis and decision making in 49/50 [98%] cases. Discordant result was caused in one patient by improper selection of images by the house staff. Conclusion : The cellular phone system was useful for image transfer and delivery patient's information, leading to earlier diagnosis and initiation of treatment. This usefulness was due to sufficient resolution of the built-in camera and the TFT-LCD, the user-friendly features of the devices, and their low cost.