• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.379-382
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• 2004

In this paper we fabricated a test panel for AMOLED on glass and PET substrate. The test panel consisted of the various size of OTFTs and OLEDs and the current driving capability of OTFTs for OLEDs has been investigated. OTFTs were made of the inverted staggered structure and employed polyvinylphenol (PVP) as the gate insulator and pentacene thin film as the active layer. The OTFTs produced the filed effect mobility of $0.3 cm^2/V.sec$ and on/off current ratio of $10^5$. OLEDs consisted of TPD for HTL and Alq3 for EML with 35nm thick, generating green monochrome light. We found that OTFT with channel length of 70${\mu}m$ and channel width of over 3.5mm provided the sufficient current to OLED to generate the luminescence of $0.3Cd/m^2$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.67-67
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• 2001

The structure zone model has been used to provide an overview of the relationship between the microstructure of the films deposited by PVD and the most prominent deposition condition.s. B.AMovchan and AV.Demchishin have proposed it firstls such model. They concluded that the general features of the resulting structures could be correlated into three zones depending on $T/T_m$. Here T m is the melting point of the coating material and T is the substrate temperature in kelvines. Zone 1 ($T/Tm_) is dominated by tapered macrograins with domed tops, zone 2 ($O.3) by columnar grains with denser boundaries and zone 3 ($T/T_m>O.5$) by equiaxed grains formed by recrystallization. J.AThomton has extended this model to include the effect of the sputtering gas pressure and found a fourth zone termed zone T(transition zone) consisting of a dense array of poorly defined fibrous grains. R.Messier found that the zone I-T boundary (fourth zone of Thorton) varies in a fashion similar to the film bias potential as a function of gas pressure. However, there has not nearly enough model for explaining the change in morphology with crystal orientation of the films. The structure zone model only provide an information about the morphology of the deposited film. In general, the nucleation and growth mechanism for granular and fine structure of the deposited films are very complex in an PVD technique because the morphology and orientation depend not only on the substrate temperature but also on the energy of deposition of the atoms or ions, the kinetic mechanism between metal atoms and argon or nitrogen gas, and even on the presence of impurities. In order to clarify these relationship, AI and Mg thin films were prepared on SPCC steel substrates by PVD techniques. The influence of gas pressures and bias voltages on their crystal orientation and morphology of the prepared films were investigated by SEM and XRD, respectively. And the effect of crystal orientation and morphology of the prepared films on corrosion resistance was estimated by measuring polarization curves in 3% NaCI solution.

• Laser Solutions
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• v.7 no.3
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• pp.37-46
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• 2004

The shape and size variations of the nanopatterns produced on a polymer film using a near-field scanning optical microscope(NSOM) are investigated with respect to the process variables. A cantilever type nanoprobe having a 100nm aperture at the apex of the pyramidal tip is used with the NSOM and a He-Cd laser at a wavelength of 442nm as the illumination source. Patterning characteristics are examined for different laser beam power at the entrance side of the aperture($P_{in}$), scan speed of the piezo stage(V), repeated scanning over the same pattern, and operation modes of the NSOM(DC and AC modes). The pattern size remained almost the same for equal linear energy density. Pattern size decreased for lower laser beam power and greater scan speed, leading to a minimum pattern width of around 50nm at $P_{in}=1.2{\mu}W\;and\;V=12{\mu}m/s$. Direct writing of an arbitrary pattern with a line width of about 150nm was demonstrated to verify the feasibility of this technique for nanomask fabrication. Application on high-density data storage is discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.367-372
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• 2002

The vertically well-aligned carbon nanotubes(CNTs) were successfully grown on Ni coated silicon wafer substrate by DC bias-assisted PECVD(Plasma Enhanced Chemical Vapor Deposition). As a catalyst, Ni thin film of thickness ranging from 15~30nm was prepared by electron beam evaporator method. In order to find the optimum growth condition, the type of gas mixture such as $C_2H_2-NH_3$ was systematically investigated by adjusting the gas mixing ratio at $570^{\circ}C$ under 0.4Torr. The diameter of the grown CNTs was 40~200nm and the diameter of the CNTs increased with increasing the Ni particles size. TEM images clearly showed carbon nanotubes to be multiwalled. The measured turn-on field was $3.9V/\mu\textrm{m}$ and an emission current of $1.4{\times}10^4A/\textrm{cm}^2$ was $7V/\mu\textrm{m}$. The CNTs grown by bias-assisted PECVD was able to demonstrate high quality in terms of vertical alignment, crystallization of graphite and the processing technique at low temperature of $570^{\circ}C$ and this can be applied for the emitter tip of FEDs.

• Journal of Sensor Science and Technology
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• v.8 no.5
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• pp.421-426
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• 1999

In this paper, we present p-channel GaAs MOSFET having $Al_2O_3$ as gate insulator fabricated on a semi-insulating GaAs substrate, which can be operated in the depletion mode. $1\;{\mu}m$ thick undoped GaAs buffer layer, $4000\;{\AA}$ thick p-type GaAs epi-layer, undoped $500{\AA}$ thick AlAs layer, and $50\;{\AA}$ thick GaAs cap layer were subsequently grown by molecular beam epitaxy(MBE) on (100) oriented semi-insulating GaAs substrate and this wafer was oxidized. AlAs layer was fully oxidized as a $Al_2O_3$ thin film. The I-V, $g_m$, breakdown charateristics of the fabricated GaAs MOSFET showed that wet thermal oxidation of AlAs/GaAs epilayer/S I GaAs was successful in realizing depletion mode p-channel GaAs MOSFET.

• Journal of the Korean Society for Heat Treatment
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• v.34 no.3
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• pp.130-136
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• 2021

With the development of the industry, bearings that require higher durability and efficiency are required, and various methods to reduce friction and wear of bearings are being studied. In this study, a wear test was conducted for STB2, a bearing steel material, by machining a micro-line pattern on the race surface of the bearing by machining. The pattern pitch of the specimens was processed to 40㎛, 80㎛, and 150㎛, and the coefficient of friction characteristics were investigated for the unpatterned specimen and the specimen with a DLC thin film deposited on the surface. As a result of the wear test, the pattern pitch showed the smallest coefficient of friction at 40㎛, and it was confirmed that the smaller the pattern pitch, the better the tribology characteristics.

• Bulletin of the Korean Chemical Society
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• v.31 no.10
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• pp.2849-2853
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• 2010

A method to improve the photocatalytic activity of titanium dioxide by modification with a sensitizer and a metal oxide is proposed. To achieve this goal, we used metal oxides as dopants. In particular, $CaWO_4$ and $Gd_2O_2S$:Tb were used because their 2.6 eV and 2.2 eV band gap energy and optical properties have a large positive effect on photocatalysis. The improvement in the photocatalytic activity of $TiO_2$ modified with $Gd_2O_2S$:Tb under ultraviolet light irradiation is described in a previous study. The present work focuses on the sensitization of metal oxide-modified $TiO_2$. Having observed the ultraviolet-visible absorption spectra of 3,4,9,10-Perylenetetracarboxylic diimide in the wide visible-light region from 400 nm to 650 nm and the broad peaks in its photoluminescence spectra at 695 nm and 717 nm, we decided to use this perylene dye to sensitize modified $TiO_2$ to enhance its activity as a visible-light harvesting photocatalyst. We also explored the positive effects thin-film surface changes stemming from ultraviolet pre-treatment have on photocatalytic activity. Finally, we subjected several metal oxide-modified $TiO_2$ products sensitized by the perylene dye to ultraviolet pre-treatment, obtaining the most active photocatalysts.

• Journal of Radiation Protection and Research
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• v.1 no.1
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• pp.22-30
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• 1976

The perturbation of dose distribution adjacent to cavities in high energy electron has shown that the percentage of dose increase varies markedly as a function of the build-up layer, the length and thickness of the cavities, and the electron energy. The dose distribution showed that cavities similar in size to those encountered in the head and neck measured by industrial film dosimetry and corrected by ionization chambers. The most increased doses by measuring are resulted in a localized dose of up to 130% of that measured at the depth of maximum dose within a homogeneous tissue equivalent phantom. The measured values and correction factors of dose perturbation due to air cavities showed in diagrams and would be summarized as follows. 1. In $8{\sim}12MeV$ electron beams, the most marked dose is observed when the build-up layer thickness is 0.5cm and cavity volume is $2{\times}2{\times}2cm^3$. 2. The highest dose point is located under cavity when the energy is increased and cavity length is longer. 3. The cavity length at which the maximum percentage dose occurs decreases with increasing energy. 4. The highest percentage cavity doses are obtained when the energy is high, the build-up layer is thin, the thickness of the cavity is large, and the length of the cavity is approximately 1 to 3cm. 5. The doses of upper portion of cavity are less than the standard dose distribution as 5 to 10%. 6. The maximum range of electron beam are extended as much as thickness of cavity. 7. A cavity having a length of 5cm closely approximates a cavity of infinite length.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.65-65
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• 2009

High temperature silicon carbide Schottky diode was fabricated with Au deposited on poly 3C-SiC thin film grown on p-type Si(100) using atmospheric pressure chemical vapor deposition. The charge transport mechanism of the diode was studied in the temperature range of 300 K to 550 K. The forward and reverse bias currents of the diode increase strongly with temperature and diode shows a non-ideal behavior due to the series resistance and the interface states associated with 3C-SiC. The charge transport mechanism is a temperature activated process, in which, the electrons passes over of the low barriers and in turn, diode has a large ideality factor. The charge transport mechanism of the diode was analyzed by a Gaussian distribution of the Schottky barrier heights due to the Schottky barrier inhomogeneities at the metal-semiconductor interface and the mean barrier height and zero-bias standard deviation values for the diode was found to be 1.82 eV and $s_0$=0.233 V, respectively. The interface state density of the diode was determined using conductance-frequency and it was of order of $9.18{\times}10^{10}eV^{-1}cm^{-2}$.

• Korean Chemical Engineering Research
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• v.43 no.2
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• pp.305-312
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• 2005

Poly(urethane-imide)s were prepared by reaction between crosslinkable endgroup containing soluble polyimide (PI) by chemical imidization and acrylate end-capped polyurethane (PU). Poly (amic acid) was prepared from 2,2'-bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA) and 4,4'-oxydianiline (ODA) and then end-capped with maleic anhydride (MA). The PU prepolymers were prepared by the reaction of polycaprolactone diol, tolylene 2,4-diisocyanate and end-capped with hydroxyl ethyl acrylate. The effect of PU content on the residual stress behavior, morphology and thermal property was studied. The poly(urethane-imide)s were characterized by thin film stress analyzer (TFSA), XRD, TGA and DMTA. Low residual stress and slope in cooling curve were achieved by higher PU content. Compared to typical polyurethane, these polymers exhibited better thermal stability due to the presence of the imide groups. Finally the residual stress of poly(urethane-imide)s was strongly affected by the morphological structure.