• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.125-130
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• 2000

Two step growth of reduced pressure chemical vapor eposition has been successfully developed to achieve in-situ phosphorus-doped silicon epilayers, and the characteristic evolution on their microstructures has been investigated using scanning electron microscopy, transmission electron microscopy, and secondary ion mass spectroscopy. The two step growth, which employs heavily in-situ P doped silicon buffer layer grown at low temperature, proposes crucial advantages in manipulating crystal structures of in-situ phosphorus doped silicon. In particular, our experimental results showed that with annealing of the heavily P doped silicon buffer layers, high-quality epitaxial silicon layers grew on it. the heavily doped phosphorus in buffer layers introduces into native oxide and plays an important role in promoting the dispersion of native oxides. Furthermore, the phosphorus doping concentration remains uniform depth distribution in high quality single crystalline Si films obtained by the two step growth.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.188.1-188
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• 2003

• Progress in Superconductivity and Cryogenics
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• v.2 no.1
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• pp.1-6
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• 2000

The effects of partial substitution of fluorine on physical properties were studied in Ag-sheathes tapes of $Tl_{0.8}Pb_{0.2}Sr_{1.8}Ba_{0.2} Ca_{2.2}Cu_3O_yF_x (0{\leq}x{\leq}1)$ nominal compositions. The tapes were prepared using the powder-in-tube method incorporating an in-situ reaction method. $CuF_2$ was used as a source of F. It was found that F-doping in Tl-1223 system resulted in a decrease in formation temperatire of Tl-1223 phase. and thus significantly deteriorated their superconducting properties. Such disadvantages seem to originate by the fromation of non-beneficial phases such as SrF2 in the early stage of the powder preparation process.

• Bulletin of the Korean Chemical Society
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• v.34 no.7
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• pp.2029-2035
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• 2013

The impact of phosphorous (P)-doping on the electrochemical performance and surface chemistry of soft carbon is investigated by means of galvanostatic cycling and ex situ X-ray photoelectron spectroscopy (XPS). P-doping plays an important role in storing more Li ions and discernibly improves reversible capacity. However, the discharge capacity retention of P-doped soft carbon electrodes deteriorated at $60^{\circ}C$ compared to non-doped soft carbon. This poor capacity retention could be improved by vinylene carbonate (VC) participating in forming a protective interfacial chemistry on soft carbon. In addition, the effect of P-doping on exothermic thermal reactions of lithiated soft carbon with electrolyte solution is discussed on the basis of differential scanning calorimetry (DSC) results.

• Journal of Sensor Science and Technology
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• v.5 no.2
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• pp.55-60
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• 1996

The growth and microwave plasma assisted nitrogen doping of ZnSe by low pressure organometallic vapor phase epitaxy(OMVPE) has been investigated in a vertical downflow reactor equipped with a laser interferometer for in-situ growth rate measurements. Particular emphasis is placed on understanding growth characteristics of $H_{2}Se$ and the new adduct source dimethylzinc:triethyllamine($DMZn:NEt_{3}$) as compared with those obtained with $H_{2}Se$ and DMZn. At lower temperatures ($<300^{\circ}C$) and pressures(<30Torr), growth rates are higher with the adduct source and the surface morphology is improved relative to films synthesized with DMZn. Hall measurements and photoluminescence spectra of the grown films demonstrate that DMZn and $DMZn:NEt_{3}$ produce material with comparable electronic and optical properties. Microwave plasma decomposition of ammonia is investigated as a possible approach to increasing nitrogen incorporation in ZnSe and photoluminescence spectra are compared to those realized with conventional ammonia doping.

• Advances in nano research
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• v.9 no.1
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• pp.25-32
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• 2020

In this work, we report the use of caffeine as an alternative source of nitrogen to successfully dope graphene (quaternary 400.6 eV and pyridinic at 398 eV according XPS), as well as the growth of silver nanowires (in-situ) in the surface of nitrogen doped graphene (NG) sheets. We used the improved graphene oxide method (IGO), chemical reduction of graphene oxide (GOx), and impregnation with caffeine as source of nitrogen for doping and subsequently, silver nanowires (NW) grow in the surface by the reduction of silver salts in the presence of NG, achieving a numerous of growth of NW in the graphene sheets. As supporting experimental evidence, the samples were analyzed using conventional characterization techniques: SEM-EDX, XRD, FT-IR, micro RAMAN, TEM, and XPS.

• Analytical Science and Technology
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• v.8 no.4
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• pp.583-590
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• 1995

Pitch-based mesophase carbon fibers prepared at different temperatures were heat-treated at temperatures lower than those of the preparation and the electrochemical Li doping/undoping characteristics were evaluated in relation to the data of IR, mass, etc. Presence of surface hydroxyls were confirmed by FTIR for lower temperature sample which showed poor anode characteristics. Upon oxidative heating, removal of surface hydroxyls took place, resulting in a remarkable improvement of the electrode characteristics. At the same time, surface roughening took place, which was confirmed by SEM and double layer capacity measurements. In situ mass spectra obesrved during the heat-treatments showed gas evolution of $H_2O$, CO, $CO_2$, $C_2H_4$, and/or $H_2$ depending on the conditions. These data together with those of weight loss and conductivity provided us a valuable information in regard to the evaluation of the electrochemical characteristics.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.80.3-80
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• 1998

• Transactions on Electrical and Electronic Materials
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• v.4 no.6
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• pp.1-4
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• 2003

Anti-reflection properties of post diffusion doped spin-on source (in-situ AR coating) have been investigated in some detail. A simple experiment for reflectivity study using oblique incidence of light and necessary modification of the theory of minimum reflectivity at oblique incidence has been established. The comparative study of the in-situ AR coating with available spin-on AR film on silicon Solar Cell Surface have been investigated.

• Current Photovoltaic Research
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• v.2 no.1
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• pp.1-7
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• 2014

We developed a method of growing thin Si film at $600^{\circ}C$ by hot wire CVD using a very thin large-grained poly-Si seed layer for thin-film Si solar cells. The seed layer was prepared by crystallizing an amorphous Si film by vapor-induced crystallization using $AlCl_3$ vapor. The average grain size of the p-type epitaxial Si layer was about $20{\mu}m$ and crystallographic defects in the epitaxial layer were mainly low-angle grain boundaries and coincident-site lattice boundaries, which are special boundaries with less electrical activity. Moreover, with a decreasing in-situ boron doping time, the mis-orientation angle between grain boundaries and in-grain defects in epitaxial Si decreased. Due to fewer defects, the epitaxial Si film was high quality evidenced from Raman and TEM analysis. The highest mobility of $360cm^2/V{\cdot}s$ was achieved by decreasing the in-situ boron doping time. The performance of our preliminary thin-film solar cells with a single-side HIT structure and $CoSi_2$ back contact was poor. However, the result showed that the epitaxial Si film has considerable potential for improved performance with a reduced boron doping concentration.