Proceedings of the Materials Research Society of Korea Conference (한국재료학회:학술대회논문집)
- 1998.08a
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- Pages.80.3-80
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- 1998
IN-SITU PHOSPHORUS HEAVY DOPING ON $Si_{1-x}Ge_x$ EPITAXIAL GROWTH WITH HIGH Ge FRACTION BY USING LPCVD
- Lee, C.J. (Dept. of Elect. Eng., Kunsan National Univ.) ;
- Matsuura, T. (Lab. for Electronic Intelligent Systems, RIEC, Tohoku Univ.) ;
- Murota, J. (Lab. for Electronic Intelligent Systems, RIEC, Tohoku Univ.)
- Published : 1998.08.01
Abstract
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