• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.75-79
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• 2000

In this study, we investigated the pretilt angle generation and liquid crystal (LC) alignment by ultravi-olet (UV) light irradiation during imidization of polymide. The generated pretilt angle of nematic (N) LC by using the in-situ photo-alignment method was smaller than that of the conventional UV photo-alignment method. Also, generated pretilt angle of NLC tends to increase by annealing. In case of using the polymer(AL-3046), we found that the in-situ Uv photo-alignment method has higher thermal stability of LC alignment, but it has a disadvantage to control pretilt angle.

• Proceedings of the Korean Magnestics Society Conference
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• 2004.12a
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• pp.142-143
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• 2004

• 한국초전도학회:학술대회논문집
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• v.13
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• pp.27-27
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• 2003

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.861-864
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• 2000

Ferroelectric thin film capacitors with high dielectric constant are important for the application of memory devices. In this work, thin films of PLT(28)(Pb$\sub$0.72/La$\sub$0.28/Ti$\sub$0.93/O$_3$) were fabricated on Pt/Ti/SiO$_2$/Si substrates in-situ annealing and ex-situ annealing have been compared depending on the annealing time. We have systematically investigated the variation of grain sizes depending on the condition of post-annealing and the variation of deposition rate. C-V measurement, ferroelectric properties, leakage current and SEM were performed to investigate the electrical properties and the microstructural properties of Pb(La,Ti)O$_3$.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.155-156
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• 2000

We propose a new in-situ fluorine passivation of poly-Si TFTs by excimer laser annealing to reduce the trap density and improve the reliability significantly. This improvement is due to the formation of stronger Si-F bonds than Si-H bonds which passivate the trap states.

• Progress in Superconductivity
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• v.14 no.2
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• pp.116-121
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• 2012

Effect of mixed gas and additional Mg powder in an annealing process of the $MgB_2$ is investigated. Four different type of samples were prepared, each in different annealing environment of Ar, $Ar+4%H_2$, Ar with Mg powder and $Ar+4%H_2$ with Mg powder. Different annealing environment did not affect the electron-phonon interaction which is reflected from the same superconducting transition of 36.6 K for all samples. The reducing effect of hydrogen is clearly depicted from the presence of excess Mg in sample synthesized in $Ar+4%H_2$ gas implying the reduced rate of reaction between Mg and B. This has manifested itself in terms of slightly increased high-field critical current density of the sample. In contrast, the sample synthesized in $Ar+4%H_2$ with Mg powder, has shown overall enhancement in the superconducting properties as presented by higher diamagnetic saturation and critical current density.

• Applied Microscopy
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• v.45 no.1
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• pp.16-22
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• 2015

The reaction kinetics of the growth of Ni germanide in the Ni/Zr-interlayer/Ge system was investigated using isothermal in situ annealing at three different temperatures in a transmission electron microscope. The growth rate of Ni germanide in the Ni/Zr-interlayer/Ge system was determined to be diffusion controlled and depended on the square root of the time, with the activation energy of $1.04P{\pm}0.04eV$. For the Ni/Zr-interlayer/Ge system, no intermediate or intermixing layer between the Zr-interlayer and Ge substrate was formed, and thus the Ni germanide was formed and grew uniformly due to Ni diffusion through the diffusion path created in the amorphous Zr-interlayer during the annealing process in the absence of any intermetallic compounds. The reaction kinetics in the Ni/Zr-interlayer/Ge system was affected only by the Zr-interlayer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.181-181
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• 2013

Recently, nanostructure and the molecular orientation of organic thin films have been largely paid attention due to its importance in organic electronics such as organic thin film transistors (OTFTs), organic light emitting diodes (OLEDs), and organic photovoltaics (OPVs). Among various methods, the diffraction and scattering techniques based on synchrotron x-rays have shown powerful results in organic thin film systems. In this work, we introduce the in-situ annealing system installed at PLS-II (Pohang Light Source II) for organic thin films by simultaneously conducting various x-ray scattering measurements of x-ray reflectivity, conventional x-ray scattering, grazing incidence wide angle x-ray scattering (GI-WAXS) and so on. Using the in-situ measurement, we could obtain real time variation of nanostructure as well as molecular orientation during thermal annealing in metal-phthalocyanine thin films. The variation of surface and interface also could be simultaneously investigated by the x-ray reflectivity measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.124-124
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• 2009

We observed the changes of crystal structure of Rubrene (5,6,11,12-tetraphenylnaphthacene) polycrystal thin films at various in situ substrate temperature and process by scanning electron microscope(SEM), x-ray diffraction (XRD) and near-field microwave microprobe (NFMM). Amorphous rubrene thin film was initially obtained on 200 nm thick $SiO_2/Si$ substrate at 35 $^{\circ}C$ in a vacuum evaporation but in situ long time postannealing at the temperature 80 $^{\circ}C$ transformed the amorphous phase into crystalline. Four heating conditions are followed : (a) preheating (b) annealing (c) preheating, annealing (d) preheating, cooling(35 $^{\circ}C$), annealing. We have obtained the largest polycrystal disk in sample (c). But the highest crytallity and conductivity of the rubrene thin films were obtained in sample (d).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.177-180
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• 2000

In this study, we investigated the pretilt angle generation and liquid crystal (LC) alignment by ultraviolet (UV) exposure during imidization of polyimide on the polymer with side chain. The generated pretilt angle of nematic (N) LC using in-situ photo-alignment method was smaller than that of the conventional UV photo-alignment method. Also, the generated pretilt angle of NLC tends to increase by annealing.