• 한국재료학회지
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• 제8권12호
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• pp.1182-1189
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• 1998

Si 기판을 실온과 $600^{\circ}C$로 유지하면서 동시 증착 방법으로 (Ti+2Si)를 증착한 후 $N_2$ 분위기에서 Ti를 증발시켜 TiN($300\AA$)/(Ti+2Si, $300\AA$)/Si(100) 구조의 시료를 제작한 다음 초고진공에서 in-situ로 열처리하여 양질의 $TiN/TiSi_2$-bilayer를 형성하였다 열처리 온도가 $700^{\circ}C$ 이상에서 (111) texture 구조를 가지면서 화학 양론적으로 $Ti_{0.5}N_{0.5}$인 박막과 C54-$TiSi_2$박막이 형성되었다. $TiN/C54-TiSi_2/Si$ (100)구조의 계면은 응집 현상이 없이 평활하였으며, $C54-TiSi_2$상은 에피택셜 성장되었다. $TiN/TiSi_2$-이중구조막의 면저항은 열처리 온도에 따라 감소하였으며, $700^{\circ}C$ 이상의 열처리 온도에서는 면저항 값이 $2.5\omega/\textrm{cm}^2$ 였다.

• Progress in Superconductivity
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• 제9권1호
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• pp.80-84
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• 2007

Charcoal was used as a carbon source for improving the critical current density of $MgB_2$ and the effect of annealing temperature on the $J_c$ of $MgB_2$ was investigated. The charcoal powder used in this study was $1{\sim}2$ microns in size and was prepared by wet attrition milling. $MgB_2$ bulk samples with a nominal composition of $Mg(B_{0.95}C_{0.05})_2$ were prepared by in situ process of Mg and B powders. The powder mixture was uniaxially compacted into pellets and heat treated at temperatures of $650^{\circ}C\;-\;1000^{\circ}C$ for 30 minutes in flowing Ar gas. It was found that superconducting transition temperature of $Mg(B_{0.95}C_{0.05})_2$ decreased by charcoal additions which indicates the carbon substitution for boron site. $J_c$ of $Mg(B_{0.95}C_{0.05})_2$ was lower than that of the undoped $MgB_2$ at the magnetic fields smaller than 4 Tesla, while it was higher than that of the undoped sample especially at the magnetic field higher than 4 T. High temperature annealing seems to be effective in increasing $J_c$ due to the enhanced carbon diffusion into boron sites.

• 터널과지하공간
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• 제17권6호
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• pp.493-502
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• 2007

암반의 수리적 특성 및 지하수 유동 양상을 파악하는데 요구되는 수리전도도맵 작성시, 투수시험 자료의 자료수 한계를 극복하고 수리전도도맵의 신뢰도 향상을 목적으로 물리탐사 결과 자료와의 병합툴을 개발하고 현장 적용해 보았다. 개발된 병합툴은 지구통계학적 최적화 시뮬레이션 기법 중의 하나인 모의 담금질 기법(Simulated Annealing)을 활용하였으며, 시뮬레이션에 필요한 전처리 과정과 후처리 과정을 포함한 4개의 모듈로 구성되었다. 파쇄대 수리특성의 파악 및 가시화를 위한 현장 적용 결과, 시추공 사이의 비조사 영역에서의 투수특성의 변화를 파악하는데 유용하게 적용될 수 있음을 확인하였다.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.63-66
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• 1999

We fabricated ramp-edge Josephson junctions with barriers formed by interface treatments instead of epitaxially grown barrier layers. Low-dielectric Sr$_2AITaO_6$(SAT) layer was used as an ion-milling mask as well as an insulating layer for the ramp-edge junctions. An ion-milled YBa$_2Cu_3O_{7-x}$ (YBCO)-edge surface was not exposed to solvent through all fabrication procedures. The barriers were produced by structural modification at the bottom YBCO edge using plasma treatment prior to deposition of the top YBCO electrode. We investigated the effects of pre-annealing and post-annealing on the characteristics of the interface-treated Josephson junctions. The junction parameters were improved by using in-situ RF plasma cleaning treatment.

• 한국재료학회지
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• 제14권11호
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• pp.821-827
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• 2004

Titanium oxide thin films were prepared on Si(100) substrates by R.F. magnetron reactive sputtering at $30\sim200watt$ R.F power range, and annealed at $600^{\circ}C\sim800^{\circ}C$ for 1 hour. The properties of $TiO_2$ thin films were analyzed using x-ray, ${\alpha}-step$, ellipsometer, scanning electron microscopy, and FT-IR spectrometer. Upon in-situ depositions, the initial phase of $TiO_2$ thin film showed non-crystalline phase at R.F. power $30\sim100$ watt. The crosssection of $TiO_2$ thin films were sbserved to be the columnar structure. With the increasing R.F power and annealing temperature, the grain size, crystallinity, refractive index, and void size of titanium oxides showed a tended to increase. The FT-IR transmittance spectra of titanium oxide thin films have the obsorption band of Ti-O bond, Si-O bond, Si-O-Ti bond and O-H bond. With the increase of R.F. power and annealing temperature, these films have the stronger bond structures. It is considered that such a phenomena is due to phase transition and good crystallinity

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.397-398
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• 2005

Ferroelectric Lithium niobate ($LiNbO_3$) thin films are fabricated on $Al_2O_3$(0001) substrate using Pulsed Laser Deposition (PLD). The various deposition conditions such as substrate temperature, oxygen pressure, and post annealing condition are investigated to deposite c-axis oriented $LiNbO_3$ thin films. Highly c-axis oriented thin films are obtained under the conditions of working pressure of 100 mTorr, deposition for 10 min at $450^{\circ}C$, and in-situ annealing for 40 min. The $LiNbO_3$ thin films are chemically etched after electric poling and the etched configurations are studied by scanning electron microscope (SEM).

• 한국진공학회지
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• 제9권2호
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• pp.155-161
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• 2000

이온빔보조증착법을 이용하여 c-BN(70%)/h-BN(30%) 혼합막을 합성하였으며, 이를 후속 열처리로 안정화 시켰다. 보론은 e-beam evaporator로, 질소는 end-hall type 이온 건으로 공급하였으며, 기판에는 -400과 -500V의 DC 바이어스를 각각 인가하였고, $700^{\circ}C$로 가열하였다. 보론의 기화속도는 1.2 $\AA$/sec였고, 질소이온의 에너지는 약 100 eV였다. 막 합성 후같은 진공에서 후속열처리를 $700^{\circ}C$ 및 $800^{\circ}C$에서 1시간동안 각각 행하였다. 후속열처리를 하지 않은 경우에는 공기 중에 노출된 직후에 막이 기판에서 박리된 반면, $800^{\circ}C$에서 후속 열처리를 한 경우에는 안정하였다. 후속 열처리에 의하여 막 전체의 응력은 4.9 GPa에서 3.4 GPa로 감소하였으나, c-BN상의 응력은 변화하지 않았다. 이러한 결과는 c-BN상의 응력 해소를 주요 안정화 기구로 보고한 기존의 결과와 다른 것으로, 후속 열처리 동안에, 비정질이나 결함이 많은 h-BN상의 구조적, 화학적 relaxation에 의하여 막의 안정화가 진행될 수 있음을 의미한다. c-BN상의 분율이 작은 혼합막의 경우 비 c-BN상의 안정화가 막 전체의 안정화에 매우 중요할 것으로 판단된다.

• 전자공학회논문지A
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• 제30A권1호
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• pp.44-50
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• 1993

In an attempt to improve the electrical characteristics of tantalum pentoxide dielectric film, silicon substrate was reacted with a nitrogen plasma to form a silicon nitride of 50.angs. and then tantalum pentoxide thin films were formed by reactive sputtering in the same chamber. Breakdown field and leakage current density were measured to be 2.9 MV/cm and 9${\times}10^{8}\;A/cm^{2}$ respectively in these films whose thickness was about 180.angs.. With annealing at rectangular waveguides with a slant grid are investigated here. In particular, 900.deg. C in oxygen ambient for 100 minutes, breakdown field and leakage current density were improved to be 4.8 MV/cm and 1.61.6${\times}10^{8}\;A/cm^{2}$ respectively. It turned out that the electrical characteristics could also be improved by oxygen plasma post-treatment and the conduction mechanism at high electric field proved to be Schottky emission in these double-layered films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.59-62
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• 1998

Thermal treatment dependences of MFS devices in $BaMgF_4$ on Si structures have been investigated. $BaMgF_4$ thin films have been directly deposited on the p-Si(100) wafers at a low temperature of $300^{\circ}$ in an ultra high vacuum(UHV) system. After in-situ post-deposition annealing was conducted for 20 s at $650^{\circ}$, bias and temperature were applied to $BaMgF_4/Si$ structures. Although X-ray diffraction analysis showed that the films were polycrystalline in nature before and after bias temperature, the C-V properties were some different between with and without bias-temperature treatment.

• Journal of Magnetics
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• 제11권1호
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• pp.1-4
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• 2006

We report on the growth, structural and transport properties of zinc-blende CrAs/GaAs/MnAs/GaAs multilayers on GaAs(001) substrates. Structural analyses using in-situ reflection high-energy electron diffraction and exsitu cross-sectional transmission electron microscopy confirmed the realization of a zinc-blende crystal structure. Room temperature Hall measurements reveal that the as-grown multilayer exhibits p-type conductivity with a very low resistivity of $0.052\;\omega{cm}$, a high carrier concentration of $6.2X10^{19}\;cm^{-3}$ and a Hall mobility of $1.8\;cm^2/Vs$. We also observed a clear decrease of the resistivity in samples after low temperature annealing.