• 공업화학
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• 제25권6호
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• pp.581-585
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• 2014

Reduced graphene oxide (RGO)를 수용성 고분자인 poly(styrene sulfonate) (PSS)로 wrapping한 수분산성 그래핀 치환체인 G-PSS와 전도성 고분자인 poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate) (PEDOT/PSS)의 복합화에 관하여 연구하였다. G-PSS의 존재 하에서 PEDOT/PSS의 제자리 화학 중합 반응을 수행하여 복합체(GP)를 얻었다. 생성물의 XPS, IR 및 Raman 분석을 통하여 모노머인 EDOT의 중합이 원활하게 진행되어 PEDOT/PSS가 생성됨과 동시에 그래핀과 복합화되었다는 것을 확인할 수 있었다. 또한 GP는 $4.46{\times}10^2S/m$의 전도도를 나타냈으며, 0.5%의 농도까지 물에 분산이 되어 G-PSS보다 전기적 특성 및 수분산성 모두 우수하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.212-212
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• 2011

In addition to the catalysts' activity and selectivity, the deactivation of catalysts during use is of practical importance. It is crucial to understand the phenomena of the deactivation to predict the loss of activity during catalyst usage so that the high operational costs associated with catalyst replacement can be reduced. In this study, the activity of Ru catalysts, such as nanoparticles (3~6 nm) and polycrystalline thin film (50 nm), have been investigated under CO oxidation and oxidative/reductive reaction conditions at various temperatures with the ambient pressure X-Ray photoelectron spectroscopy (APXPS). With APXPS, the surface oxides on the catalyst are measured and monitored in-situ. It was found that the Ru film exhibited faster oxidation-and-reduction compared to that of nanoparticles showing mild oxidative-and-reductive characteristics. Additionally, the larger Ru nanoparticles showed a higher degree of oxide formation at all temperatures, suggesting a higher stability of the oxide. These observations are in agreement with the catalytic activity of Ru catalysts. The loss of activity of Ru films is correlated with bulk oxide formation, which is inactive in CO oxidation. The Ru nanoparticle, however, does not exhibit deactivation under similar conditions, suggesting that its surface is covered with a highly active ultrathin surface oxide. Since the active oxide is more stable as nanoparticles than as a film, the nanoparticles showed mild oxidative/reductive behavior, as confirmed by APXPS results. We believe these simultaneous observations of both the surface oxide of Ru catalysts and the reactivity in real time enable us to pinpoint the deactivation phenomena more precisely and help in designing more efficient and stable catalytic systems.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35{\mu}m$ Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by $0.35{\mu}m$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and $Si_{2}NO$ species near the new $Si-SiO_{2}$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the $Si-SiO_{2}$ interface and contributed to electron trap generation.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권9호
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• pp.623-627
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• 1999

We report a new in-situ fluorine passivation method without in implantation by employing excimer laser annealing of $SiO_{x}F_{y}$/a-Si structure and its effects on p-channel poly-Si TFTs. The proposed method doesn't require any additional annealing step and is a low temperature process because fluorine passivation is simultaneous with excimer-laser-induced crystallization. A in-situ fluorine passivation by the proposed method was verified form XPS analysis and conductivity measurement. From experimental results, it has been shown that the proposed method is effective to improve the electrical characteristics, specially field-effect mobility, and the electrical stability of p-channel poly-Si TFTs. The improvement id due to fluorine passivation, which reduces the trap state density and forms the strong Si-F bonds in poly-Si channel and $SiO_2/poly-Si$ interface. From these results, the high performance poly-Si TFTs canbe obtained by employing the excimer-laser-induced fluorine passivation method.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.297-297
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• 2010

Precise control of the position and density of doping elements at the nanoscale is becoming a central issue for realizing state-of-the-art silicon-based optoelectronic devices. As dimensions are scaled down to take benefits from the quantum confinement effect, however, the presence of interfaces and the nature of materials adjacent to silicon turn out to be important and govern the physical properties. Utilization of visible light is a promising method to overcome the efficiency limit of the crystalline Si solar cells. Si quantum dots (QDs) have been proposed as an emission source of visible light, which is based on the quantum confinement effect. Light emission in the visible wavelength has been reported by controlling the size and density of Si QDs embedded within various types of insulating matrix. For the realization of all-Si QD solar cells with homojunctions, it is prerequisite not only to optimize the impurity doping for both p- and n-type Si QDs, but also to construct p-n homojunctions between them. In this study, XPS and SIMS were used for the development of p-type and n-type Si quantum dot solar cells. The stoichiometry of SiOx layers were controlled by in-situ XPS analysis and the concentration of B and P by SIMS for the activated doping in Si nano structures. Especially, it has been experimentally evidenced that boron atoms in silicon nanostructures confined in SiO2 matrix can segregate into the Si/$SiO_2$ interfaces and the Si bulk forming a distinct bimodal spatial distribution. By performing quantitative analysis and theoretical modelling, it has been found that boron incorporated into the four-fold Si crystal lattice can have electrical activity. Based on these findings, p-type Si quantum dot solar cell with the energy-conversion efficiency of 10.2% was realized from a [B-doped $SiO_{1.2}$(2 nm)/$SiO_2(2\;nm)]^{25}$ superlattice film with a B doping level of $4.0{\times}10^{20}\;atoms/cm^2$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.122-122
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• 2000

Magnesium oxide is thermodynamically very stable, has a low dielectric constant and a low refractive index, and has been widely used as substrate for growing various thin film materials, particulary oxides of the perovskite structure. There has been a considerable interest in integrating the physical properties of these oxides with semiconductor materials such as GaAs and Si. In this regard, it is considered very important to be able to grow MgO buffer layers epitaxially on the semiconductors. Various oxide films can then be grown on such buffer layers eliminating the need for using MgO single crystal substrates. Vapor phase epitaxy of magnesium oxide has been accomplished on Si(001) substrates in a high vacuum chamber using the single precursor methylmagnesium tert-butoxide in the temperature range 750-80$0^{\circ}C$. For the epitaxy of the MgO films, SiC buffer layers had to be grown on Si(001). The films were characterized by reflection high energy electron diffraction (RHEED) in situ in the growth chamber, and x-ray diffraction (XRD), x-ray pole figure analysis, scanning electron microscopy (SEM), and x-ray photoelectron spectroscopy (XPS) after the growth.

• Nuclear Engineering and Technology
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• 제55권8호
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• pp.2742-2746
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• 2023

The corrosion behavior of copper immersed in dilute oxychloride solution (100 mM) was studied through surface investigation and in-situ monitoring of open-circuit potential. The copper corrosion was initiated with copper dissolution into a form of CuCl^-₂, resulting in mass decrease within the first 40 h of immersion. This was followed by a hydrolysis reaction initiated by the CuCl^-₂ at the copper surface, after which oxide products were formed and deposited on the surface, resulting in a mass increase. The formation of nucleation sites for copper oxide and its lateral extension during the corrosion process were examined using focused ion beam (FIB)-scanning electron microscopy (SEM). The presence of metastable compounds such as atacamite (CuCl₂·3Cu(OH)₂) on the corroded copper surface was revealed by X-ray photoelectron spectra (XPS) and transmission electron microscopy (TEM)-energy dispersive spectrometry (EDS) analysis.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권1호
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• pp.1-7
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• 2005

Thin films of vanadium oxide(VO/sub x/) were deposited by r.f. magnetron sputtering from V₂O/sub 5/ target with oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% and in situ annealed in vacuum at 400℃ for 1h and 4h. Crystal structure, chemical composition, molecular structure, optical and electrical properties of films were characterized through XRD, XPS, RBS, FTIR, optical absorption and electrical conductivity measurements. The films as-deposited are amorphous, but 0%O₂ films annealed for time longer than 4h and 8% O₂ films annealed for time longer than 1h are polycrystalline. As the oxygen partial pressure is increased the films become more stoichiometric V₂O/sub 5/. When annealed at 400℃, the as-deposited films are reduced to a lower oxide. The optical transmission of the films annealed in vacuum decreases considerably than the as-deposited films and the optical absorption of all the films increases rapidly at wavelength shorter than about 550nm. Electrical conductivity and thermal activation energy are increased with increasing the annealing time and with decreasing the oxygen partial pressure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.84-84
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• 2010

We present an in-situ study of the interaction of a bimetallic Rh50Pd50 bulk crystal with O2, CO, and NO using ambient pressure x-ray photoelectron spectroscopy and compare it to results for 10 nm nanoparticles with the same overall composition. The surface of the bulk crystal has less Rh present under both oxidizing and reducing conditions than the nanoparticles under identical conditions. Segregation and oxidation/reduction proceeds quicker and at lower temperature for nanoparticles than for the bulk crystal. The near surface of the Rh50Pd50 bulk crystal after high temperature vacuum annealing is ca. 9% Rh measured by XPS. Heating in 0.1 Torr O2 to $350^{\circ}C$ increases the Rh surface composition to ca. 40%. The surface can then be reduced by heating in H2 at $150^{\circ}C$, leading to a reduced surface of 30% Rh. Titration of CO from this Rh-rich surface proceeds at a much lower pressure than on the Rh-deficient starting surface.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.145-145
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• 2000

M-CeO2 (M : noble metal) catalysts have been widely studied as three-way catalysts and methanol synthesis catalysts. Ceria is thought to play a number of roles in these catalysts. The Ce(IV)/Ce(III) redox pair may store/release gases under oxidizing/reducing conditions, extending the operational window. Additionally, metal-ceria interactions lead to several effects, including the dispersion of the active components and promoting the activation of molecules such as CO or NO. Pd is a promising component to current TWC formulations and behaves particularly well when compared with Pt and Rh-based catalysts for low-temperature oxidation of Co and hydrocarbon. However the effect of Pd-ceria interactions on the physicochemical properties of Pd and the redox properties of Ce is not elucidated yet. In order to know exactly about the metal-ceria interactions, the model study are expecting to give a better environment, resulting in the wide use of the surface science tools. The substrate was Si(100) wafer, on which Ta metal was sputtered as a thickness of 100nm. The CeO2 thin film of 30nm was deposited by using the magnetron sputtering. Spin coating and magnetron sputtering methods were used to make the Pd thin film layer. The prepared sample was investigated by in-situ XPS, AES, SEM and AFM analysis.