• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.30-30
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• 2000

당사는 각종 진공 장비를 개발/제작한 경험을 바탕으로 25년 동안 진공 산업 발전에 기여하여 왔으며 자체 기술로 HIGH VACUUM 응용시스템 설계 및 제작하고 있다. 이와 함께 3D CAD를 이용한 consulting 및 Modeling 분석을 수행하여, 자체 기술로 설계 및 제작 판매하고 있다. Vacuum System은 In-line System (ITO, SiO2, Cr Tio2, Ag, Al 등), Roll to Roll(Web) Sputtering system (ITO, SiO2, Ar, Metal 등), 유기 EL 박막 진공 증착 장치, PECVD System, Evaporator 시스템 등을 제작 공급하고 있다. 현재 Roll to Roll(Web) Sputtering System은 Dual Cathode를 사용하는 방식으로 개발중에 있으며, 평판 디스플레이용 대면적 Glass를 위한 In-line Sputtering System을 같이 개발하고 있다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.44-48
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• 2013

Niobium oxide($Nb_2O_5$) films were deposited on p-type Si wafers at room temperature using in-line pulsed-DC magnetron sputtering system with various frequencies. The different duty ratios were obtained by varying the frequency of pulsed DC power from 100 to 300 kHz at the fixed reverse time of $1.5{\mu}s$. From the thickness of the sputtered $NbO_x$ films, it was possible to obtain much higher deposition rate in case of pulsed-DC sputtering than RF sputtering. However, the similar leakage currents and structural characteristics were obtained from the metal-insulator-semiconductor(MIS) structure fabricated with the $NbO_x$ films and the x-ray photoelectron spectroscopy(XPS) results in spite of the different deposition rates. From the experimental results, the $NbO_x$ films sputtered by pulsed-DC sputtering are expected to be used in the fabrication process instead of RF sputtering.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.98-99
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• 2012

Deposition of thin films using magnetron sputtering plasmas is a well-developed, classical technology. However, detailed investigations using advanced diagnostics are insufficient in magnetron sputtering, in comparison with plasma-aided dry etching and plasma-enhanced chemical vapor deposition. In this talk, we will show examples of diagnostic works on magnetron sputtering employing metal targets. Diagnostic methods which have fine spatial resolutions are suitable for magnetron sputtering plasmas since they have significant spatial distributions. We are using two-dimensional laser-induced fluorescence spectroscopy, in which the plasma space is illuminated by a tunable laser beam with a planer shape. A charge-coupled device camera with a gated image intensifier is used for taking the picture of the image of laser-induced fluorescence formed on the planer laser beam. The picture of laser-induced fluorescence directly represents the two-dimensional distribution of the atom density probed by the tunable laser beam, when an intense laser with a relatively wide line-width is used. When a weak laser beam with a relatively narrow linewidth is used, the laser-induced fluorescence represents the density distribution of atoms which feel the laser wavelength to be resonant via the Doppler shift corresponding to their velocities. In this case, we can obtain the velocity distribution function of atoms by scanning the wavelength of the laser beam around the line center.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.41-41
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• 2008

Al-doped ZnO (AZO) thin films have been fabricated by vertical in-line dc magnetron sputtering for transparent conducting oxides (TCOs) applications. The effects of substrate temperature and dc power on the characteristics of AZO thin films are investigated and also optimized the process conditions to get the best electrical and optical properties. The fabricated thin films show a good electrical and optical uniformity within ${\pm}5%$ over the whole area of substrate ($200mm\;{\times}\;200mm$) ; the minimum resistivity of $8\;{\times}\;10^{-4}\;{\Omega}cm$ and the average transmittance of 90% within the visible wavelength range. We have found that the band gap ($E_g$) increases with increasing substrate temperature and dc power, whereas the crystallinity is getting improved with increasing substrate temperature. The binding energy of Zn $2p_{3/2}$ and O 1s is observed to decrease as the substrate temperature increases.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.194-194
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• 2010

태양전지용 투명전도막에 사용되는 Al-doped ZnO (AZO) 막은 저가이면서도 가시광역 영역에서 갖는 우수한 투과율과 낮은 비저항을 갖는 특성 때문에 ITO의 대체 재료로서 최근 활발한 연구가 진행되고 있다. 특히, 양산 현장에서는 in-line type의 대형 sputtering system에서 증착하고 있으며 높은 증착 속도와 박막 특성의 균일도가 중요한 과제다. 본 연구에서는 $2\;m\;{\times}\;1\;m\;{\times}\;0.2\;m$의 sputtering system에서 기판 캐리어를 이용해서 커다란 기판을 좁고 긴 타겟의 양쪽으로 왕복 운동을 하는 swing dynamic deposition 방법으로 $272\;mm\;{\times}\;500\;mm$ 크기의 AZO target (Al 2 wt%)을 이용하여 bipolar pulsed dc로 증착하였다. 이 시스템의 배기는 TMP와 cryo pump를 이용해서 $5\;{\times}\;10^{-7}\;Torr$의 기본 진공도를 얻으며, 공정 중에는 TMP만 사용하였다. 하지만, 본 시스템의 TMP는 비대칭 적으로 한쪽에 치우쳐 설치되어 있는데, 이것이 챔버 내에서 공정 가스인 Ar의 유동의 불균일도를 초래하게 되며, 그것이 증착되는 박막의 두께 균일도 및 특성 균일도에 영향을 주고 있음을 알 수 있었다. 본 연구에서는 다른 기본 진공도에서 증착된 AZO 박막의 특성 차이를 알아보고 비대칭 배기 구조가 in-line type 시스템에서 어떠한 두께 및 특성 불균일도를 가져오는지, 그리고 시스템 내부에 발생시키는 압력 불균일도를 상용 3차원 전산 유체해석 프로그램인 CFD-ACE+를 이용하여 분석하였다.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.245-248
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• 1999

Recently low resistance of gate line or data line is required for large screen size TFT-LCD panels. As a result, lower resistance Al-alloy is currently reviewed extensively and the resistivity is required smaller than 10$\mu\Omega$cm. In this paper, Al-Nd and Al-Zr thin film were deposited on glass substrated by D.C. magnetron sputtering system under various condition. Its properties were characterized by SEM, AFM, XRD and 4-point-probe. The optimal condition was $120^{\circ}C$, 125W, 0.4Pa, 30sccm (Ar) and $350^{\circ}C$, 20min. annealing. At that condition the resistivity of Al-Zr(0.9%wt.) is about 4$\mu\Omega$cm.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.440-446
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• 2009

Indium tin oxide(ITO) substrate is one of the key components of the touch panel and its sputtering process is dependent on the characteristics of various touch panel, such as driving type, size of panel, and the intended use. In this study, we optimized the sputtering condition of ITO film on polycarbonate(PC) by using in-line sputtering method for the application to resistive type touch panel. We varied the $O_2$/Ar gas ratio, sputtering power, pressure and moving speed of substrate to deposit ITO films at room temperature with the base vacuum of $1{\times}10^{-6}\;torr$. The sheet resistance and its uniformity, the transmittance, the thickness of the ITO film on PC substrate are investigated and analyzed. The optimized process parameters are as follows : the sheet resistance is $500{\pm}50\;{\Omega}$/□, the uniformity of sheet resistance is lower than 10%, the transmittance is higher than 87 % at 550nm, and the thickness is about 120~250. The optimized deposition conditions by in-line sputtering method can be applied to the actual mass production for the ITO film manufacturing technology.

• Korean Journal of Materials Research
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• v.21 no.9
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• pp.509-514
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• 2011

In this study, optical emission spectroscopy was used to monitor the plasma produced during the RF magnetron sputtering of a $BaTiO_3$ target. The intensities of chemical species were measured by real time monitoring with various discharge parameters such as RF power, pressure, and discharge gas. The emission lines of elemental and ionized species from $BaTiO_3$ and Ti targets were analyzed to evaluate the film composition and the optimized growth conditions for $BaTiO_3$ films. The emissions from Ar(I, II), Ba(I, II) and Ti(I) were found during sputtering of the $BaTiO_3$ target in Ar atmosphere. With increasing RF power, all the line intensities increased because the electron density increased with increasing RF power. When the Ar pressure increased, the Ba(II) and Ti(I) line intensity increased, but the $Ar^+$ line intensity decreased with increasing pressure. This result shows that high pressure is of greater benefit for the ionization of Ba than for that of Ar. Oxygen depressed the intensity of the plasma more than Ar did. When the Ar/$O_2$ ratio decreased, the intensity of Ba decreased more sharply than that of Ti. This result indicates that the plasma composition strongly depends on the discharge gas atmosphere. When the oxygen increased, the Ba/Ti ratio and the thickness of the films decreased. The emission spectra showed consistent variation with applied power to the Ti target during co-sputtering of the $BaTiO_3$ and Ti targets. The co-sputtered films showed a Ba/Ti ratio of 1.05 to 0.73 with applied power to the Ti target. The films with different Ba/Ti ratios showed changes in grain size. Ti excess films annealed at $600^{\circ}C$ did not show the second phase such as $BaTi_2O_5$ and $TiO_2$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2005.11a
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• pp.166-167
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• 2005

• Progress in Superconductivity and Cryogenics
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• v.20 no.4
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• pp.20-25
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• 2018

Niobium nitride (NbN) superconducting thin films with the thickness of 100 and 400 nm have been deposited on the surfaces of silicon oxide/silicon substrates using a sputtering method. Their superconducting properties have been evaluated in terms of the transition temperature, critical magnetic field, and critical current density. In addition, the NbN films were patterned in a line with a width of $10{\mu}m$ by a reactive ion etching (RIE) process for their characterization. This study proves the applicability of the standard complementary metal-oxide-semiconductor (CMOS) process in the fabrication of superconducting thin films without considerable degradation of superconducting properties.