• Journal of the Korean Ceramic Society
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• v.55 no.6
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• pp.576-580
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• 2018

In this study, a small amount of CoO was added to commercial Gd-doped $CeO_2$ (GDC) powder. The CoO addition greatly enhanced sinterability at low temperatures, i.e., more than 98% of relative density was achieved at $1,000^{\circ}C$. When GDC/8YSZ (8 mol% yttrium stabilized zirconia) bilayers were sintered, Co-doped GDC showed excellent adhesion to the YSZ electrolyte. Transmission electron microscope (TEM) analysis showed that there were no traces of liquid films at the grain boundaries of GDC, whereas liquid films were observed in the Co-doped GDC sample. Because liquid films facilitate particle rearrangement and migration during sintering, mechanical stresses at the interface of a bilayer, which are developed based on different densification rates between the layers, might be reduced. In spite of $Co^{2+}$ doping in GDC, the electrical conductivity was not significantly changed, relative to GDC.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.425.2-425.2
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• 2014

$TiO_2$ possesses great photocatalytic properties but absorbs only UV light owing to high band gap energy (Eg = 3.2 eV). By narrowing the band gap through doping a metal ion, the photocatalytic activity can be enhanced in condition of the light of a higher than 365 nm wavelength. Main purpose for this study is to evaluate the activities of metal doped $TiO_2$ for degrading the volatile organic compounds (VOCs); p-xylene is chosen in the VOC removal test. Vanadium is selected in this study because an ionic radius of vanadium is almost the same as titanium ion and vanadium can be easily doped into $TiO_2$. V-doped $TiO_2$ was synthesized by sol-gel methods and compared with pure $TiO_2$. Pure TiO2 powder and V-doped $TiO_2$ powder were coated on glasses by spray coating method. UV-Visible spectrophotometer was used for the measurement of the band gap changes. VOC concentration degradation level was tested with using various UV light sources in an enclosed chamber. Catalytic activities of prepared samples were evaluated based on the experimental results and compared with coated pure $TiO_2$ sample.

• Transactions on Electrical and Electronic Materials
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• v.1 no.3
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• pp.6-9
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• 2000

Selectively excited photoluminescence(PL) spectroscopy has been carried out on the ~1540 nm $^{4}$I$_{13}$ 3/ to $^{4}$I/wub 15/2/ emissions of the multiple Er$^{3+}$ centers observed in Er-implante undoped and Mg-doped GAN at temperatures ranging from 6K to 295K. The temperature dependence of the Er$^{3+}$ PL spectra selectively excited by below -gap light demonstrates different quenching rates for the distinct Er$^{3+}$ centers, and indicates that the PL spectra with the most rapid thermal quenching rats do not contribute to the room temperature, above-p-pumped Er$^{3+}$ spectrum. In addition, selective PL spectroscopy has ben carried out on the Er$^{3+}$ emission in Er-implanted undoped and Mg-doped GaN at temperatures ranging 6K to 295K. The results indicate that the previously reported enhancement of the violet-pumped centers contribution to the low temperature above excited Er$^{3+}$ PL in Mg-doped GaN is also evident at room temperature.temperature.

• Journal of Electrochemical Science and Technology
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• v.10 no.3
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• pp.271-275
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• 2019

Anodic $TiO_2$ nanotubes were simultaneously grown and doped with $RuO_2$ by single-step anodization in a negatively-charged $RuO_4{^-}$ precursor. Subsequently, a high positive voltage was imposed on the nanotubes in an $F^-$-based electrolyte (a process referred to as potential shock), which led to the formation of a through-hole $RuO_2$-doped $TiO_2$ nanotube membrane without significant loss of the $RuO_2$ catalyst. XPS results confirmed that the doped Ru metal was converted into $RuO_2$ as the potential shock voltage increased. Further increases in the potential shock voltage led to the formation of $RuO_x/Ru$ in the $TiO_2$ nanotubes. All of our results clearly showed that a through-hole catalyst-doped $TiO_2$ nanotube membrane can be produced by a sequence consisting of single-step anodization and the potential shock process.

• Journal of Convergence for Information Technology
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• v.8 no.5
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• pp.45-50
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• 2018

The functional nanomaterials of fluorescent dye-doped silica nanoparticles(NPs) are applied to bio applications such as bio-labeling of DNA micro-array, and bio-imaging. Organic dye-doped fluorescent silica NPs exhibit excellent bio-compatibility, non-toxic, and highly hydrophilic properties. In this study, organic fluorescent dyes were dissolved in ethanol, and deionized(DI) water. Organic fluorescent dyes were physically adsorbed to silica NPs and chemically doped to silica NPs. The fluorescence characteristics(FLC) was investigated by UV lamp irradiation of 365 nm wavelength. As results, the FLC of dye-doped silica NPs exhibits better than dye-adsorbed silica NPs and the FLC was improved with the increase of concentration of doped-dyes. The fluorescent organic dyes were well dissolved in ethanol than DI water. The photostability of dye-doped silica NPs was superior than pure fluorescent organic dye. The FLC of optimized dye-doped silica NPs would be applied to agent of non-invasive fluorescence bio-imaging in live cell and in vivo.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.644-649
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• 1995

The sinterability and the microstructure of Al doped UO$_2$-6wt%Gd$_2$O$_3$pellets, which were doped using Al(OH)$_3$, ADS(aluminium distearate), Al(OH)$_3$+ ADS mixture and sintered at 1$700^{\circ}C$ for 4h in H$_2$, atmospheres, were examined. The sintered densities of Al doped UO$_2$-6wt%Gd$_2$O$_3$pellets were more than 94% T.D.. The open porosity in ADS doped pellets was dramatically decreased. And the amounts of pores less than l${\mu}{\textrm}{m}$ and larger than 10${\mu}{\textrm}{m}$ were decreased regardless of the kinds of doped Al compounds. And the average pore size of Al doped UO$_2$-6wt%Gd$_2$O$_3$pellets was ranged between 2 and 3${\mu}{\textrm}{m}$. While grain structure of non-doped UO$_2$-6wt%Gd$_2$O$_3$pellets was revealed to be duplex type (rocks in sands), that of Al doped pellets to be uniformly equiaxid type. Especially, the grain size in ADS doped pellets was averaged to 4.6${\mu}{\textrm}{m}$.

• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.338-342
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• 2016

ZnO thin film co-doped with F and Al was prepared on a glass substrate via simple non-alkoxide sol-gel spin coating. For a fixed F concentration, the addition of Al co-dopant was shown to reduce the resistivity mainly due to an increase in electrical carrier density compared with ZnO doped with F only, especially after the second post-heat-treatment in a reducing environment. There was no effective positive contribution to the reduction in resistivity due to the mobility enhancement by the addition of Al co-dopant. Optical transmittance of the ZnO thin film co-doped with F and Al in the visible light domain was shown to be higher than that of the ZnO thin film doped with F only.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.115-120
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• 1990

The spectroscopic properties of Cr3+-doped sapphire and Ti3+-doped sapphire fibers are reported. Tensile stress produces blue shifts of the R lines and changes in their radiative lifetimes and integrated intensities which can be correlated to stress-induced changes of the crystal-field parameters in a Cr3+-doped sapphire fiber. A net red shift of the zero phonon fluorescence line of 2Eg state and a decrease of the splittings of 2T2g state with uniaxial stress are observed in a Ti3+-doped sapphire. In excitation spectra the two peaks from the 2Eg state are shifted to the blue with different rates. The changes are attributed to the stress-induced changes of crystal field and Jahn-Teller effect.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.3
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• pp.119-123
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• 2013

Most of the world's solar cells in photovoltaic industry are currently fabricated using crystalline silicon. Czochralski-grown silicon crystals are more expensive than multicrystalline silicon crystals. The future of solar-grade Czochralski-grown silicon crystals crucially depends on whether it is usable for the mass-production of high-efficiency solar cells or not. It is generally believed that the main obstacle for making solar-grade Czochralski-grown silicon crystals a perfect high-efficiency solar cell material is presently light-induced degradation problem. In this work, the substitution of boron with gallium in p-type silicon single crystal is studied as an alternative to reduce the extent of lifetime degradation. The diamond-wire sawing technology is employed to slice the silicon ingot. In this paper, the quality of the diamond wire-sawn gallium-doped silicon wafers is studied from the chemical, electrical and structural points of view. It is found that the characteristic of gallium-doped silicon wafers including texturing behavior and surface metallic impurities are same as that of conventional boron-doped Czochralski crystals.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.426-429
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• 2006

We investigated the electrooptical properties of a carbon nanotube (CNT)-doped nematic liquid crystal (LC) cell. Experimental results reveal that the doped CNTs influence the elastic constant of LC-CNT dispersion. Using a small amount of CNT dopant, the rise time of the LC cell is nearly invariant; the threshold voltage of the cell increases due to the increase in the elastic constant of LC-CNT dispersion. At a higher CNT concentration, the marked increase in the dielectric anisotropy of LC-CNT dispersion markedly decreases the rise time and threshold voltage of the LC cell. The fall time of this cell decreases with increasing CNT concentration due to the increase in elastic constant and the slight increase in viscosity of LC-CNT dispersion. The rise time and the fall time of the LC cell are decreased simultaneously when the LC host is doped with a moderate amount of CNT dopant.