• Title/Summary/Keyword: In doping

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A Study on Emitter layer by Plasma Doping for Crystalline Silicon Solar Cells (플라즈마 도핑을 이용한 결정질 태양전지 에미터층 형성 연구)

  • Yu, Dong-Yeol;Roh, Si-Cheol;Choi, Jeong-Ho;Kim, Jeong-Hwan;Seo, Hwa-Il;Kim, Yeong-Cheol
    • Journal of the Semiconductor & Display Technology
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    • v.10 no.4
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    • pp.61-64
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    • 2011
  • In order to grow the crystalline solar cells industry continuously, development of alternate low-cost manufacturing processes is required. Plasma doping system is the technique for introducing dopants into semiconductor wafers in CMOS devices. In photovoltaics, plasma doping system could be an interesting alternative to thermal furnace diffusion processes. In this paper, plasma doping system was applied for phosphorus doping in crystalline solar cells. The Plasma doping was carried out in 1~4 KV bias voltages for four minutes. For removing surface damage and formation of pn junction, annealing steps were carried out in the range of $800{\sim}900^{\circ}C$ with $O_2$ ambient using thermal furnace. The junction depth in about $0.35{\sim}0.6{\mu}m$ range have been achieved and the doping profiles were very similar to emitter by thermal diffusion. So, It could be confirmed that plasma doping technique can be used for emitter formation in crystalline solar cells.

New Doping Process for low temperature poly silicon TFT

  • Park, Kyung-Min;You, Chun-Gi;Kim, Chi-Woo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.303-306
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    • 2005
  • We report the self-aligned low temperature poly silicon (LTPS) TFT process using simple doping process. In conventional LTPS-TFT, the Lightly Doped Drain (LDD) doping and source/drain doping are processed separately by aligning the gate with the source and drain during the gate lithography step. This ne w process not only fabricates fully self-aligned low temperature poly silicon TFTs with symmetric LDD structure but also simplifies the process flow with combined source/drain doping and LDD doping in one step. LDD doping process can be achieved using only source/drain doping process according to the new structure. In this paper, the TFT characteristics of NMOS and PMOS using the new doping process will be discussed.

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An Analysis Study on the Doping Intentions of Athletes using Stepwise Regression Analysis

  • Youn-Suk Han;Jong-Hwa Park
    • Journal of the Korea Society of Computer and Information
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    • v.28 no.5
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    • pp.171-177
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    • 2023
  • This study aims to provide useful information for prevention of doping by investigating and verifying relationships among demographic factors such as athletic career and experience of anti-doping education, controlled motivation, attitude toward anti-doping, perceived behavioral control factors and doping intentions to verify factors affecting doping intentions of domestic elite athletes based on the advance studies that have been carried out various theoretical approaches so far. Method: This study analyzed using SPSS 27.0 program. First, this study confirmed a multicollinearity problem by conducting Pearson's correlation analysis to examine correlation between variables. And this study conducted stepwise multiple linear regression to confirm how the variables affect doping intentions. Result: Study results show that all factors such as athletic career, experience of anti-doping education, controlled motivation, attitude toward anti-doping and perceived behavioral control have a significant impact on doping intentions, and this study verified significant impact by putting variables in order of each influence. As a result of verification, this study confirmed that controlled motivation has the greatest influence, and perceived behavioral control toward doping, experience of anti-doping education, attitude toward and athletic career came next in order.

The Influence of Demographic Information, Knowledge of Doping and Education of Anti-doping on Attitude toward Doping among Elite Handball Players (엘리트 핸드볼 선수들의 인구통계학적 특성 및 도핑 관련 정보가 도핑에 대한 태도에 미치는 영향)

  • Chu, Zhesen;Kim, Yong-Jae;Kim, Taegyu
    • Journal of Digital Convergence
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    • v.16 no.3
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    • pp.553-560
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    • 2018
  • This study aimed to quantify the attitude toward doping among handball players and to identify the influence of players' demographic information, knowledge of doping, education of anti-doping on the attitudes toward doping. 385 elite handball players (193 adolescent players, 165 adult players) were participated in this study and filled in the questionnaire about demographic information, knowledge of doping, education of anti-doping and Performance Enhancement Attitude Scale (PEAS). Collected data were analyzed by Stepwise multiple linear regression. Adult players were more generous about doping than adolescents, and, adolescent players' attitudes toward doping were influenced by their gender and age. In adults, attitudes toward doping were related with only the gender. These results would be useful information to develop the effective anti-doping strategy for handball play.

Doping Effects and Semiconductor Behaviors of the Dispersed p- and n- type Semiconductor Particles (분산된 p형 및 n형 반도체 입자의 도핑 효과와 반도체 동작)

  • 천장호;손광철;라극환;조은철
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.5
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    • pp.126-133
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    • 1994
  • Doping effects and semiconductor behaviors of the dispersed p- and n-Si, p- and n- GaAs particles in the aqueous electrolyte have been studied using microelectrophoretic, voltammetric and chronoamperometric techniques. The cations (K$^{+}$) are adsorbed on both the p- and n- Si particle surfaces regardless of the sign of space charges in the depletion layers, i.e. doping profiles. The surface states are negatively charged acceptor states. On the other hand, the anions (CI$^{-}$) are adsorbed on both the p- and n- GaAs particle surfaces regardless of the sign of space charges in the depletion layers, i.e. doping profiles. The surface states are positively charged donor states. Under the same conditions, electrophoretic mobilities, electrochemical processes, doping effects and related semiconductor behaviors of the Si and the GaAs particles are similar regardless of the doping profiles, i. e. dopants and doping concentrations. The doping effects and related semiconductor behaviors of the dispersed p- and n- type semiconductor particles are gradually lost with decreasing dimensions.

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Graphene Doping by Ammonia Plasma Surface Treatment (암모니아 플라즈마 표면처리를 통한 그래핀의 질소도핑)

  • Lee, Byeong-Joo;Jeong, Goo-Hwan
    • Journal of the Korean institute of surface engineering
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    • v.48 no.4
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    • pp.163-168
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    • 2015
  • Graphene has attracted much attention due to its remarkable physical properties and potential applications in many fields. In special, the electronic properties of graphene are influenced by the number of layer, stacking sequence, edge state, and doping of foreign elements. Recently, many efforts have been dedicated to alter the electronic properties by doping of various species, such as hydrogen, oxygen, nitrogen, ammonia and etc. Here, we report our recent results of plasma doping on graphene. We prepared mechanically exfoliated graphene, and performed the plasma treatment using ammonia gas for nitrogen doping. The direct-current plasma system was used for plasma ignition. The doping level was estimated from the number of peak shift of G-band in Raman spectra. The upshift of G-band was observed after ammonia plasma treatment, which implies electron doping to graphene.

Effect of Doping State on Photoresponse Properties of Polypyrrole

  • Choi, Jongwan
    • Elastomers and Composites
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    • v.56 no.4
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    • pp.250-253
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    • 2021
  • Polypyrrole is an organic thermoelectric material which has been receiving extensive attention in recent years. Polypyrrole is applicable in various fields because its electrical properties are controllable by its doping concentration. In this study, the effects of the polypyrrole doping state on its photoresponse were investigated. The degree of doping was controlled by ammonia solution treatment. Then, the chemical structure as a function of the doping states was observed by Raman analysis. Moreover, the photocurrent and photovoltage characteristics for various doping states were measured by an asymmetrically irradiated light source. As the degree of doping increased, the electrical conductivity increased, which affected the photocurrent. Meanwhile, the photovoltage was related to the temperature gradient caused by light irradiation.

Method for Screening and Confirming Meldonium in Human Urine by High-Resolution Mass Spectrometry and Identification of Endogenous Interferences for Anti-Doping Testing

  • Kim, Yongseok;Jeong, Dawon;Min, Hophil;Sung, Changmin;Park, Ju-hyung;Son, Junghyun;Lee, Kang Mi;Kim, Ho Jun;Lee, Jaeick;Kwon, Oh-Seung;Kim, Ki Hun
    • Mass Spectrometry Letters
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    • v.8 no.2
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    • pp.39-43
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    • 2017
  • Meldonium is a drug for treating ischemia by expanding the arteries but it can also enhance the performance of sports players. The World Anti-Doping Agency (WADA) has included it in the list of prohibited substances since 2016. Meldonium is one of the challenging substances for anti-doping testing because it is difficult to recover by general liquid-liquid or solid phase extraction due to its permanent charge and high polarity. Therefore, high-performance liquid chromatography (HPLC) is currently used by injecting a diluted urine sample (known as the "dilute-and-shoot" strategy). There is no loss of target compounds in the extraction/cleanup procedure but its high matrix effect could interfere in their separation or detection from the endogenous urinary compounds. We report a single method using high-resolution mass spectrometry that can be used for both screening and confirmation, which follows the "dilute-and-shoot" strategy. In this method, the endogenous compounds' interfering peaks in the mass spectrum are separated at a high resolution of FWHM 140,000, and the results are suitable for substance detection following the WADA guidelines. The interferences in the obtained mass spectrum of the urine matrix are identified as acetylcholine, lysine, and glutamine by further analysis and database searching. Validation of the method is performed in routine anti-doping testing, and the limit of detection is 50 ng/mL. This method uses simple sample preparation and a general reverse phase HPLC column, and it can be easily applied to other substances.

Controlling Work Function of Graphene by Chemical Doping

  • Lee, Ji-A
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.628-628
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    • 2013
  • Graphene, a single layer of graphite, has raised extensive interest in a wide scientific community for its extraordinary thermal, mechanical, electrical and other properties [1,2]. However, because of zero-band gap of graphene, it is difficult to apply for electronic applications. To overcome this problem, chemical doping is one of way to opening grahene bandgap. According to experimental results, by changing doping concentration and doping time, it is possible to control work function of graphene. We can obtain results through raman spectroscopy, UPS, Sheet resistance. Moreover, electronic properties of doped graphene were studied by making field effect transistors. We were able to control the doping concentration, dirac point of graphene and work function of graphene by formng n-type, p-type doping materials. In this research, the chemicals of diazonium salts, viologen, etc. were used for extrinsic doping.

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LC-MS/MS Method for Simultaneous Analysis of Growth Hormone-Releasing Peptides and Secretagogues in Human Urine

  • Min, Hophil;Han, Boyoung;Sung, Changmin;Park, Ju-Hyung;Lee, Kang Mi;Kim, Ho Jun;Kim, Ki Hun;Son, Junghyun;Kwon, Oh-Seung;Lee, Jaeick
    • Mass Spectrometry Letters
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    • v.7 no.3
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    • pp.55-63
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    • 2016
  • Growth hormone (GH)-releasing peptides (GHRPs) and GH secretagogues (GHSs) are listed in the World Anti-Doping Agency (WADA) Prohibited List. In the present study, we developed and validated a method for the simultaneous analysis of seven GHRPs (alexamorelin, GHRP-1, -2, -4, -5, -6, and hexarelin) and three GHSs (anamorelin, ibutamoren, and ipamorelin) in human urine. Method validation was performed at minimum required performance levels specified by WADA technical documents (2 ng/mL) for all substances, and the method was validated with regard to selectivity (no interference), linearity (R2 > 0.9986), matrix effects (50.0%-141.2%), recovery (10.4%-100.8%), and intra- (2.8%-16.5%) and inter-day (7.0%-22.6%) precisions. The limits of detection for screening and confirmation were 0.05-0.5 ng/mL and 0.05-1 ng/mL, respectively.