• 한국수소및신에너지학회논문집
• /
• 제19권5호
• /
• pp.386-393
• /
• 2008

The Sulfur-iodine(SI) thermochemical cycle is one of the most promising methods for massive hydrogen production. For the purpose of continuous operation of SI cycle, phase separation characteristics into two liquid phases ($H_2SO_4$-rich phase and $HI_x$-rich phase) were directly investigated via Bunsen reaction. The experiments for Bunsen reaction were carried out in the temperature range, from 298 to 333 K, and in the $I_2/H_2O$ molar ratio of $0.109{\sim}0.297$ under a continuous flow of $SO_2$ gas. As the results, solubility of $SO_2$, decreased with increasing the temperature, had considerable influence on the global composition in the Bunsen reaction system. The amounts of impurity in each phase(HI and $I_2$ in $H_2SO_4$-rich phase and $H_2SO_4$ in $HI_x$-rich phase) were decreased with increasing $H_2SO_4$ molar ratio and temperature. To control the amounts of impurity in $HI_x$-rich phase, temperature is a factor more important than $I_2/H2_O$ molar ratio. On the other hand, the affinity between $HI_x$ and $H_2O$ was increased with increasing $I_2/H2_O$molar ratio.

• 청정기술
• /
• 제13권1호
• /
• pp.72-78
• /
• 2007

석유 잔사유(PGO)에 포함된 유효성분을 분리하기 위한 기초 연구로 컬럼 및 봉형 용융 결정화기를 사용하여 나프탈렌에 불순물로 2-메틸나프탈렌, 인덴, 1-메틸나프탈렌을 각각 포함시킨 혼합물에 관한 분리정제 연구를 수행하였다. 결정화시, 나프탈렌의 순도는 냉각속도가 낮거나, 융점이 상대적으로 낮은 불순물이 포함될 수 록 증가하는 경향을 나타내었으며, 동일한 조건에서 컬럼형 결정화기의 순도는 봉형에 비해 결정화후 부분용융에서 순도의 증가에 기인하여 높은 경향을 나타내었다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
• /
• pp.1688-1691
• /
• 2007

This paper shows that the boundary image sticking can be prohibited completely by using the vacuum sealing process, which means that the residual impurities such as nitrogen or oxygen can be a critical factor inducing the boundary image sticking. The production of boundary image sticking was checked in the test panel fabricated by the $N_2$ or $O_2$ flow during the vacuum sealing process. As a result, the boundary image sticking did not appear in the case of $N_2flow$, whereas the boundary image sticking was observed in the case of $O_2$ flow even though the test panel was fabricated by the vacuum sealing process.

• 한국진공학회지
• /
• 제8권4A호
• /
• pp.397-402
• /
• 1999

The base pressure of the vacuum vessel of KSTAR tokamak is to be ultra high vacuum, $10^{-6}\sim10^{-7}Pa$, to produce a clean plasma with low impurity concentrations. For this purpose, vessel and plasma facing components need to be baked up to $250^{\circ}C$, $350^{\circ}C$ respectively to remove impurities from the plasma-material interaction surfaces. Here the required heating power to be supplied for baking has been calculated according to pre-assumed different temperature profiles (baking scenario and proper baking plan for KSTAR tokamak has been proposed. Mass flow rate and temperature of nitrogen gas for baking has also been calculated.

• 한국세라믹학회지
• /
• 제32권1호
• /
• pp.37-44
• /
• 1995

TiO2 fine powders were synthesized using oxygenolysis and hydrolysis reaction of TiCl4 vapor in gas phase. The TiO2 powder synthesized showed morphological differences depending on reaction system as follows: TiCl4-O2 reaction system produced the monosized particles having polyhedral shape with well-defined crystal planes and the particles did not agglomerate into secondary particles. TiCl4-H2O reaction system, whereas, produced the spherical secondary particles which consisted of fine primary particles. Other powder characteristics such as particle size, impurity content and rutile content are also reported in this study.

• 전기전자학회논문지
• /
• 제17권4호
• /
• pp.531-536
• /
• 2013

The impact of UV irradiation process on the AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor was investigated. Due to the high intensity UV irradiation before the gate dielectric deposition, the conductivity of AlGaN/GaN structure and the drain saturation current of the transistor increased by about 10 %. However, the pinch off characteristics of transistor was severely deformed by the process. By comparing the electrical characteristics of the transistors, it was proposed that the high intensity UV irradiation formed a sub-channel under the two dimensional electron gas of AlGaN/GaN structure even without additional impurity injection.

• Journal of Korean Vacuum Science & Technology
• /
• 제3권1호
• /
• pp.74-78
• /
• 1999

For a high efficient field emission display (FED), the specific vacuum conditions below 10-7 Torr should be required. However, because the FED has the geometrical restriction due to its micro size, the thin film getters can be proposed for chemical pumping as a way to reduce impurity gases in the panel. The thin film getters, developed by employing the coating of new materials such as NI or Pt on getter surface, can be used without any activation process and show the enhanced sorption characteristics. Especially, using the Zr (1${\mu}{\textrm}{m}$) thin film getters with the Pt surface layer, the significant gettering for various active gases could be achieved from 9$\times$10-5 Torr to 1$\times$10-6 Torr or below. this good sorption properties is mainly contributed to the surface coating layer which shows the catalytic effect for gas dissociation and protects the getter materials against oxidation.

• Transactions on Electrical and Electronic Materials
• /
• 제5권5호
• /
• pp.173-179
• /
• 2004

The influence of heavily Si impurity doping in the GaN barrier of InGaN/GaN multi-quantum well structures of blue light emitting diodes were investigated by growing samples in metal-organic chemical vapor deposition. The delta-doped sample was compared to the sample with the undoped barrier. The delta-doped sample shows the tunneling behavior and forms the energy level of 0.32 eV for tunneling and the photoemission of the 450-nm band. The photo-luminescence shows the blue-shifted broad band of the radiative transition due to the inclusion of Si delta-doped layer indicating that the delta doping effect acts to form the higher energy level than that of quantum well. The dislocation may provide the carrier tunneling channel and plays as a source of acceptor. During the tunneling of hot carrier, there was no light emission.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제48권5호
• /
• pp.339-343
• /
• 1999

This paper reports the characteristics of poly-Si TFT unitary CMOS circuits fabricated with various techniques, in order to investigate the optimum process conditions. The active films were deposited by PECVD and LPCVD using $SiH_4\; and\; Si_2H_6$ as source gas, and annealed by SPC and ELA methods. The impurity doping of the oource and drain electrodes was performed by ion implantation and ion shower. In order to investigate the AC characteristics of the poly-Si TFTs processed with various methods, we have examined the current driving characteristics of the polt-Si TFT and the frequency characteristics of 23-stage CMOS ring oscillators. Ithas been observed that the circuits fabricated using $Si_2H_6$ with low-temperature process of ELA exhibit high switching speed and current driving performances, thus suitable for real application of large area electronics.

• 한국표면공학회지
• /
• 제27권4호
• /
• pp.234-240
• /
• 1994

A large area impurity doping method for poly-Si TFT LCD has been developed. The advantage of this method is the doping of impurities into Si over a large area without mass separation and beam scanning. Phosphorus diluted in hydrogen was discharged by RF(13.56MHz) power and ions from discharged gas were accelerated by DC acceleration voltage and were implanted into deposited Si films. The annealing characteristic of this method was similar to that of the ion implantation method in the low doping concentration. Three mechanisms were evolved in the annealing characteristics of phosphorus doped Si films. Point defects annihilation and the retrogradation of dopant atoms at grain boundaries as a result of grain growth played a major role at low and high annealing temperature, respectively. However, due to the dopant segregation, the reverse annealing range existed at intermediate annealing temperature.