• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.377-377
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• 2012

Microprocessor technology now relies on copper for most of its electrical interconnections. Because of the high diffusivity of copper, Atomic layer deposition (ALD) $TaN_x$ is used as a diffusion barrier to prevent copper diffusion into the Si or $SiO_2$. Another problem with copper is that it has weak adhesion to most materials. Strong adhesion to copper is an essential characteristic for the new barrier layer because copper films prepared by electroplating peel off easily in the damascene process. Thus adhesion-enhancing layer of cobalt is placed between the $TaN_x$ and the copper. Because, cobalt has strong adhesion to the copper layer and possible seedless electro-plating of copper. Until now, metal film has generally been deposited by physical vapor deposition. However, one draw-back of this method is poor step coverage in applications of ultralarge-scale integration metallization technology. Metal organic chemical vapor deposition (MOCVD) is a good approach to address this problem. In addition, the MOCVD method has several advantages, such as conformal coverage, uniform deposition over large substrate areas and less substrate damage. For this reasons, cobalt films have been studied using MOCVD and various metal-organic precursors. In this study, we used $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as a cobalt precursor because of its high vapor pressure and volatility, a liquid state and its excellent thermal stability under normal conditions. Furthermore, the cobalt film was also deposited at various $H_2/NH_3$ gas ratio(1, 1:1,2,6,8) producing pure cobalt thin films with excellent conformality. Compared to MOCVD cobalt using $H_2$ gas as a reactant, the cobalt thin film deposited by MOCVD using $H_2$ with $NH_3$ showed a low roughness, a low resistivity, and a low carbon impurity. It was found that Co/$TaN_x$ film can achieve a low resistivity of $90{\mu}{\Omega}-cm$, a low root-mean-square roughness of 0.97 nm at a growth temperature of $150^{\circ}C$ and a low carbon impurity of 4~6% carbon concentration.

• 분석과학
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• 제35권5호
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• pp.205-211
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• 2022

Deuterium (D) is an isotope with one more neutron number than hydrogen (H). Heavy elements rarely change their chemical properties with little effect even if the number of neutrons increases, but low-mass elements change their vibration energy, diffusion rate, and reaction rate because the effect cannot be ignored, which is called an isotope effect. Recently, in the semiconductor and display industries, there is a trend to replace hydrogen gas (H₂) with deuterium gas (D₂) in order to improve process stability and product quality by using the isotope effect. In addition, as the demand for D₂ in industries increases, domestic gas producers are making efforts to produce and supply D₂ on their own. In the case of high purity D₂, most of them are produced by electrolysis of heavy water (D₂O), and among D₂, hydrogen deuteride (HD) molecules are present as isotope impurities. Therefore, in order to maximize the isotope effect of hydrogen in the electronic industry, HD, which is an isotope impurity of D₂ used in the process, should be small amount. To this end, purity analysis of D₂ for industrial processing is essential. In this study, HD quantitative analysis of D₂ for high purity D₂ purity analysis was established and hydrogen isotope RM (Reference material) was developed. Since hydrogen isotopes are difficult to analyze with general gas analysis instrument, they were analyzed using a high-precision mass spectrometer (Gas/MS, Finnigan MAT271). High purity HD gas was injected into Gas/MS, sensitivity was determined by a signal according to pressure, and HD concentrations in two bottles of D₂ were quantified using the corresponding sensitivity. The amount fraction of HD in each D₂ was (4518 ± 275) μmol/mol, (2282 ± 144) μmol/mol. D₂, which quantifies HD amount using the developed quantitative analysis method, will be manufactured with hydrogen isotope RM and distributed for quality management and maintenance of electronic industries and gas producers in the future.

• 한국재료학회지
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• 제14권8호
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• pp.547-551
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• 2004

The sulfidation behaviour of Fe-XAl-0.3Y(X=5, 10, 14, 25 $wt.\%$) alloys was investigated at 1123 K in $H_2/H_{2}S$ gas atmosphere for $1\sim24$ hrs using SEM/EDX, XRD and EPMA. The weight changes of Fe-XAl-0.3Y alloys followed the parabolic rate law, Sulfidation rates of iron aluminide alloys with high Al content were one-twentieth lower than that of 5Al alloys. This is due to the formation of protective $Al_{2}O_3$ oxides on the surface of 10Al, 14Al and 25Al alloys. By calculating partial pressure of impurity oxygen contained $H_2/H_{2}S$ gas, the $Al_{2}O_3$ oxides formation could be explained using Fe-Al-S-O thermodynamic stability diagram. The sulfidation product scales of the 5Al alloy showed that thick iron sulfide scale(FeS) containing porosities formed during early stages of sulfidation. With continued sulfidation, aluminum sulfide was formed at the alloy/scale interface.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.126-129
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• 2006

AC-plasma display panels were examined before and after the aging process to analyze the effect of the aging process. The gas analysis was done to detect the impurity gases out of the MgO film and phosphor by a residual gas analyzer. There were no differences found in the components. The MgO film was analyzed to find out the effect of an ion bombardment due to discharge. The surface roughness of the MgO film was different from regional groups due to the different degree of ion bombardments. XPS analysis showed that the 8 hour aging process was not sufficient to remove $Mg(OH)_2$ and $MgCO_3$ existed on the MgO surface. Photoluminescence measurement showed the small deterioration of blue and green phosphor.

• 한국수소및신에너지학회논문집
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• 제24권4호
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• pp.288-294
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• 2013

This gas analysis data come from the hydrogen which is produced by proton exchange membrane. Main impurities of hydrogen are methane, oxygen, nitrogen, carbon monoxide, and carbon dioxide. The concentration of impurities is ranged between 0.0191 to $315{\mu}mol/mol$ for each impurity. Methane contamination is believed from the electrode reaction between carbon doped electrode and produced hydrogen. Nitrogen contamination should take place the sampling process error, not from PEM hydrogen Production system.

• 한국세라믹학회지
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• 제33권3호
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• pp.299-306
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• 1996

We invesgated the fesibility of thin films deposition by pyrolysis of metalorganic precursors using chemical beam deposition (CBD) process. We attempted to understand the effects of deposition variables such as substrate temperature operating pressure effusion cell temperature and H2 partial pressure on the properties of MgF2 grown by CBD. Mg(tfac)2 was used as a precursor. MgF2 thin films were always grown in an amorphous state and crystallized bypost-annealing. he higher the substrate temperature and the lower the operating pressure the less the impurities I the deposited MgF2 thin films. H2 gas has to be supplied for the pyrolitic reaction of Mg(tfac)2 decomposition. MgF2 films annealed in H2 have lower C impurity than those annealed in O2. But their crysatllinity was independent of annealing atmosphere. The optimum conditions for the prepara-tion of MgF2 films by CBD process were as following : The substrate temperature 55$0^{\circ}C$ the operating pressure 10-4 torr; effusion cell temperature 21$0^{\circ}C$ the percentage of H2 100% Post-annealing in H2 gas was required to remove residual carbon and to form MgF2 crystalline phase.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2000년도 추계학술대회논문집B
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• pp.247-254
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• 2000

The base pressure of vacuum vessel of the KSTAR (Korea Superconducting Tokamak Advanced Research) Tokamak is to be a ultra high vacuum, $10^{-6}{\sim}10^{-7}Pa$, to produce clean plasma with low impurity containments. For this purpose, the KSTAR vacuum vessel and plasma facing components need to be baked up to at least $250^{\circ}C,\;350^{\circ}C$ respectively, within 24 hours by hot nitrogen gas from a separate baking/cooling line system to remove impurities from the plasma-material interaction surfaces before plasma operation. Here by applying the implicit numerical method to the heat balance equations of the system, overall temperature distributions of the KSTAR vacuum vessel and plasma facing components are obtained during the whole baking process. The model for 2-dimensional baking analysis are segmented into 9 imaginary sectors corresponding to each plasma facing component and has up-down symmetry. Under the resulting combined loads including dead weight, baking gas pressure, vacuum pressure and thermal loads, thermal stresses in the vacuum vessel during bakeout are calculated by using the ANSYS code. It is found that the vacuum vessel and its supports are structurally rigid based on the thermal stress analyses.

• 한국재료학회지
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• 제9권7호
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• pp.715-723
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• 1999

마그네슘은 20여년간 자동차 산업에서 휠소재로 사용되어 왔다. 마그네슘 휠은 무게가 알루미늄 휠보다 25% 가벼워서 주행성이 우수하다. 이 연구의 목적은 사형주조 및 영구금형주조 공정에 의한 AZ91D 합금제 췰을 개발하는 것이다 보호개스$(SF_6+CO_2)$를 사용하는 비플럭스 용해기술을 적용하여 용탕의 산화와 불순물의 유입을 배제하였다 마그네슘 용탕은 가압식 펌프시스템을 사용하여 가열된 파이프를 통하여 모울드에 자동으로 공급된다. 열처리 및 인고트의 조성에 따른 AZ91B 합금제 휠의 기계적 특성을 조사하였다.

• 한국주조공학회지
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• 제6권4호
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• pp.284-289
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• 1986

Decarburization phenomena have been studied by plasma in stainless steel, plain carbon steel and cast iron. It was also investigated the movement of impurity element P,S in the plasma jet metal pool. The plasma jet was obtained by $Ar\;-\;CO_2$ gas mixture with 5 kVA DC power source. It produced enough temperature to dissociate into activated oxygen atom by reaction of $CO_2{\leftrightarrows}CO+O^+$ and it reacted with ${\underline{C}}$ in metal pool. Decarburization rate was increased about 5 times in comparing with the conventional induction melted metal pool by $CO_2$ gas decarburization. Even under the Ar plasma jet, decarburization was obtained by agitation of metal bath by $Ar^+$ bombardment and dilution phenomena of carbon atom under the very high plasma temperature. But heavy element P and S are not much removed because they are too heavy in mass to be activated by $Ar^+$ion bombardment. Desulphurization was achieved by $Ar\;-\;CO_2$ plasma in plain carbon steel and cast iron by the reaction of $SO_2({\underline{S}}+O^+)$. But dephosphorization could not be obtained by $Ar\;-\;CO_2$ plasma, because gaseous reaction of phosphorous oxide (${\underline{P}}+O^+$) was not existed.

• 한국결정성장학회지
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• 제9권5호
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• pp.504-509
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• 1999

In-situ cleaning and subsequent silicon epitaxial film growth were performed in a load-locked reactor equipped with Hg-grid UV lamp and PBN heater to obtain the smooth and contaminant-free underlying surface and develop low-temperature epitaxial film growth process. The removals of organic and native oxide were investigated using UV-excited $O_2$ and $NF_{3}/H_{2}$, and the effect of the surface condition was examined on the quality of silicon epitaxial film grown at temperature as low as $750^{\circ}C$. UV-excited gas phase cleaning was found to be effective in removing the organic and native oxide successfully providing a smooth surface with RMS roughness of 0.5$\AA$ at optimal condition. Crystalline quality of epitaxial film was determined by smoothness of cleaned surface and the presence of native oxide and impurity. Crystalline defects such as dislocation loops or voids due to the surface roughness were observed by XTEM.